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CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR
WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR

y-349 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: diode as shown in Figure 5. This substantially simplifies the mixer-IF amplifier interface design , - 7001 7001 7001 7001 7001 - - 34.9 34.9 34.9 34.9 34.9 34.9 34.9 34.9 34.9 34.9 1.0 1.0 , X-Band Low Drive Mixer Diode RF Parameters vs. Local Oscillator Figure 4. Balanced Mixer Using Diode Pairs with Suffix "M" Figure 5. Balanced Mixer Using Diode Pairs with Suffix "MR" ALPHA INDUSTRIES -
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DMF-6106 dmf6106
Abstract: specified. Parameter Symbol min. Reverse diode Continuous reverse drain current Tc = 25 'C Pulsed reverse drain current Tc = 25 'C Diode forward on-voltage ^SM BUZ 349 Values typ. max. Unit - - , SIEMENS SIPMOS® Power Transistor · N channel · Enhancement mode · Avalanche-rated Type BUZ 349 , ) See chapter Package Outlines. BUZ 349 Package 1 ) TO-218 AA O rdering Code C67078-S3113-A2 , DD = 30 V, VGS = 10 V, ID= 3 A, R qs = 50 £2 g fs BUZ 349 Values typ. max. Unit ^IBR) D -
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Abstract: Vos fc flDS(on) Package Ordering Code BUZ 349 100 V 32 A 0.06 £2 TO , as35b05 [3133521 Olfl 79 9 06.99 BUZ 349 Infineon tachnologie» Electrical Characteristics , â  Data Book 0235bQ5 D133522 T54 800 W à 06.99 BUZ 349 Infineon tachnologies , . typ. Unit max. Reverse Diode Inverse diode continuous forward current A 's 7b = 25 -C 32 Inverse diode direct current,pulsed 7b = 25 'C Inverse diode forward voltage 128 -
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G13355D P-T0220-3-1 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777
Abstract: Preliminary Information X9530 Temperature Compensated Laser Diode Controller FEATURES · , DIODE BIAS CONTROL APPLICATION · SONET and SDH Transmission Systems · 1G and 10G Ethernet, and Fibre Channel Laser Diode Driver Circuits DESCRIPTION The X9530 is a highly integrated laser diode bias , and the bias current of a laser diode. The integrated General Purpose EEPROM is included for product data storage and can be used for transceiver module information storage in laser diode applications Xicor
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Abstract: Preliminary Information X9530 Temperature Compensated Laser Diode Controller FEATURES · , DIODE BIAS CONTROL APPLICATIONS · SONET and SDH Transmission Systems · 1G and 10G Ethernet, and Fibre Channel Laser Diode Driver Circuits DESCRIPTION The X9530 is a highly integrated laser diode bias , and the bias current of a laser diode. The integrated General Purpose EEPROM is included for product data storage and can be used for transceiver module information storage in laser diode applications Xicor
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Abstract: Series 349 and 349H Octave-Band 11 Bit Digital PIN Diode Attenuators T h e S e rie s 3 4 9 and 34 , 349 T h e m a xim u m p ro g ra m m a b le a tte n u a tio n range in e v e ry b a n d e xc e p t th e , programming · Guaranteed monotonicity · Frequency range: 0.75 to 18 GHz 52 Series 349 and 349H Specifications PERFORMANCE CHARACTERISTICS: SERIES 349 FREQ U EN C Y RANGE GHz MAX. INSERTION LOSS (dB) 1.6 , . Flatness specification at 64 dB level is ±0.2 dB higher than at 60 dB level. 53 Series 349 and 349H -
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3491H 3498H-64 3494H-64 3494-80 3498-64 3491H-64 3492H-64 DA-15P D110551 3492H 3494H 3498H
Abstract: 148/149 248/249 348/349 Low Power Quad 741 Operational Amplifiers DESCRIPTION The LM148 , . 1-14 Eraytheoñ^ Low Power Quad 741 Operational Amplifiers 148/149 248/249 348/349 ABSOLUTE MAXIMUM , LM148/149 LM248/249 LM348/349 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX Input Offset Voltaqe , ^) unless otherwise noted. 148/149 248/249 348/349 Low Power Quad 741 Operational Amplifiers APPLICATION , diode (ex. LM103), Vs - ±15V A simpler version with some distortion degradation at high frequencies -
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LM149 LM124 KE4393 amplifier MA 741 LM348J LM349N p1087e ic lm 741 LM125 P1087E 1N914
Abstract: method of obtaining the 180° p h ase reversal is to u se one forward and one reverse diode a s show n in , Schottky Barrier and Poi nt Contact M ixer and Detector D iodes Bon d ing M ethods: Diode C hips, B eam , Current Figure 4. Figure 2. Typical X-Band Low Drive Mixer Diode - RF Parameters vs Local , 1.6 1.6 - 1.8 - - - - - - - - - - 16.0 16.0 16.0 16.0 16.0 16.0 16.0 16.0 34.9 34.9 34.9 34.9 34.9 34.9 34.9 34.9 34.9 34.9 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 -
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5503 dm DMF6130B B5880 DMF-6130B k and ka band radar detector dm 465 P-041 P-076 DMC5507C 1DMC5507CM1 DMC5507B DMC5507BM
Abstract: 148/149 248/249 348/349 Low Power Quad 741 Operational Amplifiers DESCRIPTION The LM148 series is a , 2003 Low Power Quad 741 Operational Amplifiers 148/149 248/249 348/349 ABSOLUTE MAXIMUM RATINGS Supply , +150°C 300° (See Note 3) parameter conditions lm148/149 lm248/249 LM 348/349 units min typ max , Powered by ICminer.com Electronic-Library Service CopyRight 2003 148/149 248/249 348/349 Low Power Quad , N914, D2 = 3.6V avalanche diode (ex. LM103), Vg = ±1 5V A simpler version with some distortion -
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NCMV IC TL 0841 low pass filter circuit 741 LM148J03 lm 149 op amp IC 741 to R21/R1 2R71/R5
Abstract: 148/149 248/249 348/349 Low Power Quad 741 Operational Amplifiers DESCRIPTION The LM148 , . 1-14 Eraytheoñ^ Low Power Quad 741 Operational Amplifiers 148/149 248/249 348/349 ABSOLUTE MAXIMUM , LM148/149 LM248/249 LM348/349 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX Input Offset Voltaqe , ^) unless otherwise noted. 148/149 248/249 348/349 Low Power Quad 741 Operational Amplifiers APPLICATION , diode (ex. LM103), Vs - ±15V A simpler version with some distortion degradation at high frequencies -
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ci 741 amplifier operational RC4157 RC4156 "pin compatible" LM248J LM248N RC4157 "pin compatible"
Abstract: n - n x Single Diode V 'C X - Y - Super Fast Recovery Diode ®H £I Surface Mount DE3L40 400V 3A ·SM D · f iy - r x Package I E i'ivO OUTLINE DIMENSIONS " M V $ - U>^V t»yK0 # # / \°^-> Standard soldering pad Tolerance: ±0.1 (1)(2)(4) * « : ±0.1 6.6±0-2 5.2± ·trr5 0 n , -5 SJiindeng& i- tokyo. japan. Super Fast Recovery Diode DE3L40 I f t 't t ® CHARACTERISTIC , 160 I SJiin de/igen _ TOKYO. JAPAN. J515-5 349 -
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Abstract: i S '> 3 7 h dF -/'î y T $ W ^ * T / W X Surface Mounting Device â'" K Schottky Barrier Diode Single Diode l^ v h à ® DE5S6M OUTLINE DIMENSIONS 60V 5A â'¢S M D â'¢ T jl5 0 t: T t V j'j'jx # P rrs m S E â'¢S R B 3 S â'¢ D C /D C H V A - i? â'¢m , al Resistance 5 'W i ^ f c i l O ^ s , T j= 2 5 'C Pulse w idthIO ^ s , Rating of per diode ,   C H A R A C T E R IS T IC D IA G R A M S 1.6 0003317 SHINDENGEN 331 349 -
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DDD331
Abstract: 3.49 V · Benchmark efficiency for SMPS appreciation in particular HF welding · Rugged transient , load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage , 1 mA (25 °C to 125 °C) VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 125 °C IF = 50 A Diode , current IGES VGE = ± 20 V MIN. 1200 4.0 TYP. 3.49 4.15 4.16 4.97 4.9 - 10 11 600 3.30 3.90 3.6 4.37 MAX , 0.49 0.82 0.3 1.5 us Diode peak reverse recovery current Irr trr A Diode reverse Vishay Semiconductors
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GB50YF120N
Abstract: with various diode configurations, manufactured by the epitaxial planar process and packaged in an , age switching diodes. SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE The following , ELECTRICAL CHARACTERISTICS PER DIODE: SYMBOL TEST CONDITIONS V r =480V V r =480V, T a =150°C lR=1 .OjjA lp , MARKING MARKING MARKING CODE: CODE: CODE: CODE: C7006 C706A C706C C706S MAXIMUM RATINGS PER DIODE , CMPD7006A CMPD7006C CMPD7006S SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE SOT-23 CASE - -
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DIODE marking ED ED marking code diode ED MARKING CODE CMPD7006 CPD72
Abstract: components required, reverse load current limited by connected load. 2> Additional external diode required , GND pulled up, V in = 0, see diagram page 349, T\ =-40.+150°C Turn-on time to 90% Vout: Turn-off , drain-source diode) is normally limited by the connected load. Reverse current lG NID of = 0.3 A at -32 V , currents have to be limited (see max. ratings page 344 and circuit page 349). Sem iconductor Group , L16) [_16) L L BTS 432 D2 Terms Status output Zener diode: 6.1 V typ., max 5 mA, V|_ogic 5 -
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BTS 432 D2 smd 432d2 432I2 POWER SUPPLY BTS SIEMENS scr siemens siemens scr
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 349 · N channel · Enhancement mode · Avalanche-rated Type BUZ 349 Vbs 100 V b R o s io n ) Package TO-218AA Ordering Code C67078-S3113-A2 , Gate threshold voltage b = 1 mA Zero gate voltage drain current ^GS'^DS, ^GS(th) 2 .1 BUZ 349 , 1850 17 Values typ. max. BUZ 349 Unit S pF ns Semiconductor Group 1034 07.96 , . Reverse Diode Inverse diode continuous forward current k 7c = 25 °C Inverse diode direct current,pulsed 7c -
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DIODE 349 SIEMENS 1035
Abstract: . Each module consists of a three-phase diode converter section, a three-phase inverter section and a , Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ , the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj , Location (Top View) IGBT FWDi Converter Diode NTC Thermistor 97.6 -40 ~ +150 -40 ~ +125 °C °C 29.7 , 63.9 70.4 75.9 85.8 91.3 0 0 28.4 27.4 34.9 42.0 43.3 54 55 56 57 58 59 60 61 Br Powerex
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NTC 20 SP 010 CM50MX-24A
Abstract: SIEMENS B AT 17. Silicon Schottky Diode â'¢ For mixer applications in the VHF/UHF range â'¢ For high-speed switching Ordering Code BAT BAT BAT BAT 17 17-04 17-05 17-06 Pin , Ip = 0.1 mA IF= 1 mA / F = 10mA Diode capacitance VR= 0 V / = 1 MHz Ct Differential forward , = / ( V R ) Diode capacitance CT = / ( V R ) / = 1 MHz Differential forward resistance RF = , 120 100 80 60 40 20 ° 0 50 100 °C 150 - Semiconductor Group 349 â'™â -
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Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777 G15D344 01E03M5
Abstract: Unisonic Technologies Co., Ltd 1 of 6 QW-R502-349.A 7N60Z Power MOSFET ABSOLUTE MAXIMUM , ) EAS 600 mJ Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4 , 70 170 140 130 38 ns ns ns ns nC nC nC 2 of 6 QW-R502-349.A 7N60Z Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Unisonic Technologies
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600v 2A ultra fast recovery diode 7N60ZL- 7N60ZG- QW-R502-349
Abstract: 6 QW-R502-349.C 7N60Z ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified , Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 142 W Junction Temperature TJ , www.unisonic.com.tw 2 of 6 QW-R502-349.C 7N60Z ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise , Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Unisonic Technologies
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7N60ZL-TA3-T 7N60ZG-TA3-T 7N60ZL-TQ2-T 7N60ZG-TQ2-T 7N60ZL-TQ2-R 7N60ZG-TQ2-R
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