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1504822 Phoenix Contact Circular Connector, 3 Contact(s), Female, Socket, ROHS COMPLIANT
1504848 Phoenix Contact Circular Connector
DGD1504S8-13 Diodes Incorporated Half Bridge Based MOSFET Driver
PBLS1504Y,115 Nexperia PBLS1504Y; PBLS1504V - 15 V PNP BISS loadswitch TSSOP 6-Pin
PT1504-6B Everlight Electronics Co Ltd Photo Transistor, 940nm , 0.02A I(C), ROHS COMPLIANT, PLASTIC PACKAGE-2
HI1-5043-5 Intersil Corporation DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDIP16

transistors mj 1504

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Philips Semiconductors Preliminary specification PowerMOS transistors PHP6NA60E Low capacitance Avalanche energy FEATURES · · · · · · , UNIT mj mJ A Non-repetitive avalanche energy Repetitive avalanche energy' Repetitive and non-repetitive avalanche current E aB Ia S' U r 1 pulse width and repetition rate limited by T, max. 1504 , transistors Low capacitance Avalanche energy rated THERMAL RESISTANCES SYMBOL PARAMETER ^ t h j-m b -
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mj 1504 transistor transistor mj 1504 of mj 1504 transistor T0220AB
Abstract: ID Parameter Drain - Source Breakdown Voltage V m W A mJ These Devices are sensitive to , 0.9 mJ 0.75 1.3 mJ 0.85 SiC chopper diode ratings and characteristics IF Maximum , . Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504 , Eoff 1 0 10 125 150 Eoff Eon 1 5 100 3 Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=7.5 TJ=125°C L=100uH 75 Switching Energy vs Gate Resistance Microsemi
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APT0502 APT33N90JCCU3
Abstract: ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to , Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 1.5 mJ 0.75 2.1 mJ , either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters , Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=7.5 TJ=125°C L=100uH 3 75 Switching , comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Microsemi
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6v 283 diode mj 1504 APT33N90JCU2
Abstract: Unit V A V m W A August, 2009 ID Parameter Drain - Source Breakdown Voltage mJ , ; VBus = 600V ID = 26A ; RG = 7.5 1.5 mJ 0.75 2.1 mJ 0.85 Chopper diode ratings and , (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical CoolMOS , 2.5 2.0 1.5 1.0 0.5 25 100 125 150 4 Switching Energy (mJ) Eon and Eoff (mJ , Temperature (ºC) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG Microsemi
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MOSFET 400V 26a mosfet 1200V APT33N90JCU3
Abstract: , 2009 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to , = 7.5Ω 1.5 mJ 0.75 2.1 mJ 0.85 Chopper diode ratings and characteristics IF , (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical CoolMOS , Switching Energy vs Gate Resistance Switching Energy vs Current Switching Energy (mJ) VDS=600V RG=7.5 TJ=125°C L=100ÂuH 3 Eon 2 Eoff 1 0 August, 2009 4 4 Eon and Eoff (mJ Microsemi
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Abstract: Voltage V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling , 10V ; VBus = 600V ID = 26A ; RG = 7.5 0.9 mJ 0.75 1.3 mJ 0.85 SiC chopper diode , . 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical , Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=7.5 TJ=125°C L=100uH 75 Switching Energy , comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Microsemi
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APT33N90JCCU2
Abstract: Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic , 7.5Ω 0.9 mJ 0.75 1.3 mJ 0.85 SiC chopper diode ratings and characteristics IF , . Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504 , =600V RG=7.5 TJ=125°C L=100ÂuH 2 Eoff Switching Energy (mJ) Eon and Eoff (mJ) 50 C , transistors developed by Infineon Technologies AG. â'COOLMOSâ' is a trademark of Infineon Technologies AGâ Microsemi
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Abstract: September, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices , switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω 0.9 mJ 0.75 1.3 mJ 0.85 , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches , (mJ) Eon and Eoff (mJ) 50 C) TJ, Junction Temperature (° ID, Drain Current (A , 1000 â'COOLMOSâ"¢ comprise a new family of transistors developed by Infineon Technologies AG Microsemi
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Abstract: V mΩ W A August, 2009 ID Parameter Drain - Source Breakdown Voltage mJ These , switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω 1.5 mJ 0.75 2.1 mJ 0.85 , either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters , Current Switching Energy (mJ) VDS=600V RG=7.5 TJ=125°C L=100ÂuH 3 Eon 2 Eoff 1 0 August, 2009 4 4 Eon and Eoff (mJ) 50 TJ, Junction Temperature (° C) ID, Drain Current Microsemi
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Abstract: , =50V) 4 600 Volts Watts W/°C °C Amps mJ (ID = 20A, VDD, =50V) 3600 STATIC ELECTRICAL , Followed. APT Website - http://www.advancedpower.com "COOLMOSTM comprise a new family of transistors , 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain Advanced Power Technology
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APT77N60JC3 ID77A MIL-STD-750
Abstract: Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing , equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in , , 2008 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG Microsemi
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20A 1,0V ISOTOP diode schottky 600v infineon Mosfet 600V, 20A APT50N60JCCU2
Abstract: PF6-40 Amps mJ (ID = 40A, VDD, =50V) 4 (ID = 20A, VDD, =50V) 1800 STATIC ELECTRICAL , transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG , (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084 Advanced Power Technology
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Abstract: , =50V) 4 800 Volts Watts W/°C °C Amps mJ (ID = 8A, VDD, =50V) 1340 STATIC ELECTRICAL , Followed. APT Website - http://www.advancedpower.com "COOLMOSTM comprise a new family of transistors , 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain Advanced Power Technology
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APT31N80JC3 ID22A
Abstract: Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing , ) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) Anode Drain * Emitter terminals are shorted internally , (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 Eoff 0.8 0.4 0 0 10 20 30 40 50 60 ID , Gate Resistance 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 0 10 20 30 40 50 Gate Resistance (Ohms) Source , new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Microsemi
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APT50N60JCU3
Abstract: Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge , . Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504 , Current (A) 1.6 Switching Energy (mJ) Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L , Voltage (V) April, 2008 Switching Energy (mJ) VDS=400V RG=5 TJ=125°C L=100uH 40 , transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG Microsemi
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apt50n60 k 786 APT50N60JCU2
Abstract: mΩ W A April, 2008 ID Parameter Drain - Source Breakdown Voltage mJ These Devices , . Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504 , 20 ID, Drain Current (A) Switching Energy (mJ) Eon 1.2 Eoff 0.8 0.4 VDS=400V ID , 1.3 1.5 VSD, Source to Drain Voltage (V) April, 2008 Switching Energy (mJ) 1.6 40 , COOLMOSâ"¢ comprise a new family of transistors developed by Infineon Technologies AG. â'COOLMOSâ' is a Microsemi
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Abstract: Current 2 Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 1 180 Single Pulse Avalanche , comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of , SWITCHING ENERGY (mJ) 6000 5000 4000 3000 2000 1000 R = 5 14000 SWITCHING ENERGY (mJ) 12000 10000 , (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) * Source Drain * Source Dimensions in Microsemi
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77A DIODE ce 77a diode 77a E145592 APT30DF60
Abstract: mΩ W A April, 2008 ID Parameter Drain - Source Breakdown Voltage mJ These Devices , internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504 , 20 ID, Drain Current (A) Switching Energy (mJ) Eon 1.2 Eoff 0.8 0.4 VDS=400V ID , 1.3 1.5 VSD, Source to Drain Voltage (V) April, 2008 Switching Energy (mJ) 1.6 40 , COOLMOSâ"¢ comprise a new family of transistors developed by Infineon Technologies AG. â'COOLMOSâ' is a Microsemi
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Abstract: mJ 1800 4 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN , Followed. Microsemi Website - http://www.microsemi.com "COOLMOSTM comprise a new family of transistors , 2000 1000 0 10 SWITCHING ENERGY (mJ) SWITCHING ENERGY (mJ) 050-7146 Rev G 11-2009 J , . Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504 Microsemi
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Abstract: MJ 1504 RBS0 A LIMIT IS ZOO VOLTS LESS 1 1 1 1 1 "0 200 400 600 900 1000 1200 , TECHNICAL DATA MJ8504 MJ8505 Desi{?nor.s Data. Sheet SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The MJ8504 and MJ8505 transistors are designed for high-voltage, high-speed, power switching in inductive , SILICON POWER TRANSISTORS 700 and 800 VOLTS 175 WATTS Designer's Data for "Worst Case" Conditions The , lower test currents this relationship may not be valid. As is common with most switching transistors -
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pnp mj 1504 pnp 222A transistor k 3562 MJ8506 222A Transistor 1N4934 MJB504
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