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Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

transistor kt 808

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Staßfurt C H R O M A T mit KT 808 AM in der Hochspannungsendstufe ! Seit März 1983 wird beim CHROMAT der Transistor KT 805 A, EDV-Hr. 8313205 durch den Typ KT 808 AM. EDV-Hr. 8383314 ersetzt, was die , Bauform (KT 808 im T03-Gehäuse) ist jedoch folgendes zu beachten! Der VEB FSG Staßfurt stellt den , ist, das Kühlblech mit einem KT 805 A und einem KT 808 AM zu bestücken. Auf dem bisher eingesetzten , abgesägt wurde. Für die Montage des Transistors KT 808 AM ist die zum T03-Gehäuse passende und mit -
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KT808 ku 606 transistor d 808 2110-B1 KT 805 transistor 805A 2107B-2 T03-G
Abstract: 3204) anstelle 4er KT 808 AM eingesetzt worden. Die Transistoren KU 608 können in Ersatzfall beliebig mit den Typen KT 805 A oder KT 808 AM (EDV-Nr. 83 8 3314) eingesetzt werden. 2/85 Seite 3 6 , Bezeichnung XF 9001 R 9005 wird in 390 Ohm geändert In der Zeichenerklärung sind beim Transistor SD 335 , Mitteilung aus dem VEB Rundfunktechnik REMA Ersatz von Transistoren KT 817 B Im »Andante 844" Im Gerät "Andante 844" werden ab sofort die Importtransistoren KT 817 B durch den Inlandtyp SD 345 ersetzt. In -
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KT 817 transistor rema andante colortron service-mitteilungen KT 817 817 b SD335A 12Q4JOO-65JDO
Abstract: ., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003TN (KT)/91098HA (KT)/1115MY/1283KI, TS No , 2SD1012 2SB808 2SB 808 012 60 2SD1 100 7 5 3 2 40 20 0 0 0.2 0.4 0.6 0.8 1.0 , Current Gain, hFE 3 2 2SB808 2 2SB 2SD 808 100 7 5 3 2 10 1.0 10 7 5 1012 2 3 , 808 2 101 2SD (For PNP, minus sign is omitted.) 2 3 5 (For PNP, minus sign is omitted.) 3 , middle-point voltage at the output stage and the collector voltage of the driver transistor must be VCC/2 SANYO Electric
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2sb transistor 2SA608e 2SC536e ENN676D 2SB808/2SD1012
Abstract: Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003TN (KT)/91098HA (KT)/1115MY/1283KI, TS No.676­1/5 2SB808/2SD1012 Continued from preceding page. Parameter , 2SD1012 50m 2SB808 VCE=10V (For PNP, minus sign is omitted.) 5 3 808 2SB 2 012 , 100 808 2 101 (For PNP, minus sign is omitted.) 2 3 5 10 2 3 5 2SD , 3 DC 2 op era tio 0.1 n 7 5 2 10 5 1.0 808 3 2SD 2 SANYO Electric
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sanyo 2SC536e 2SC536E,F 2SA608-E ITR08386 ITR08385 ITR08384
Abstract: OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003TN (KT)/91098HA (KT , ITR08384 f T - IC VCE=10V (For PNP, minus sign is omitted.) 5 3 808 2SB 2 012 , DC 2 op era tio 0.1 n 7 5 2 10 2 808 3 2S 5 1.0 2SB 3 , output stage and the collector voltage of the driver transistor must be VCC/2. Therefore, the output , transistor are more to be VCC/2 so that the output can be maximized. DS442×2 VCC=3V 100 1k 100uF + SANYO Electric
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R1820 2SA60 ITR08383
Abstract: Ordering number:EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. unit:mm 2110A , , TOKYO, 110-8534 JAPAN 21599TH (KT)/13095YK (KOTO) TA-0157 No.5035­1/5 2SC5228 No.5035­2/5 , 0.117 36.7 0.497 ­51.4 1000 0.515 ­152.4 3.141 80.8 0.125 36.0 0.459 SANYO Electric
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KT 0803 50354 9484 transistor marking 9365
Abstract: Ordering number:ENN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimensions unit:mm 2110A 1.9 0.95 , , Taito-ku, TOKYO, 110-8534 JAPAN 22505TN (PC)/21599TH (KT)/13095YK (KOTO) TA-0157 No.5035­1/5 2SC5228 , 89.6 80.8 72.2 65.4 58.8 52.7 46.9 | S12 | 0.035 0.063 0.094 0.109 0.117 0.125 0.131 0.138 0.146 0.155 SANYO Electric
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Abstract: Ordering number:ENN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. unit:mm 2110A , OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22505TN (PC)/21599TH (KT , 80.8 0.125 36.0 0.459 ­55.1 1200 0.503 ­165.2 2.687 72.2 0.131 36.2 SANYO Electric
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29 0826 ITR07930 ITR07931 ITR07932 ITR07933 ITR07934
Abstract: , prescaler, and reference oscillator transistor require only the addition of an external crystal to provide , scillator transistor. A 3 3 p F ca p a citor should be connected from this pin to ground. D iodes shown in , 4.61 4.00 3.63 3.42 3.26 3.15 3.07 3.01 2.95 -6.23 -4.40 -5.61 -6.66 -8.08 -8.93 , 5.78 10.42 9.18 8.08 6.88 6.02 5.19 4.52 3.93 3.35 2.72 3.6 11 T R A N S C E IV E R S ,  . >* < â  â'¢â  V i:. S -
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RF2516 315/433MH SSOP-16
Abstract: Feldeffekttransistor C = Z-Diode T = Transistor (bipolar) · y = gesteuerte mehrschichtige Bauelemente CD = , bis 899 - P.ot ¿ s w U z = 0.1 -99 V zwecks n = Transistor 4 = Diode von 901 bis , Kollektor-Emitterspannung (Spitzenwert) U cEX = Kollektor-Emitterspannung bei gesperrtem Transistor U od - , B TT 703 B rT703r rT703 4 TT 806 A H 806 t> rT806 B rr 8 0 6r rT806A KT 201 A KT 201 B KT 301 B S S , NF-Transistoren (Fortsetzung) fT fwib* in MHz K T 201 r K T 201 A K T 203 A K T 203 B K T 203 B KT KT KT KT KT KT -
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BEL 639 transistor Halbleiterbauelemente DDR Sowjetische Halbleiter-Bauelemente Germanium Transistor katalog elektronik DDR transistor IR 652 H GC
Abstract: consequences arise from the proposals. KT Earth XT XT Toggle flipflop Keyboard interface , Mask HFI 6 39 DP HFO 7 38 MODE XT 8 37 KT 9 36 HKS MFO , VDD HKS PD VDD 37 KT Keytone output signal which is sent out in pulse dialing mode with a keytone frequency of 582 Hz. KT sink/drive current is about 100 uA at VDD = 2.5V KT VDD , Short mute during pulse dialing, active high During MASK an internal NPN transistor shortens VL Atmel
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U3761MB-X SSO-44 2N5401 MPSA42 U3761MB 4791C
Abstract: consequences arise from the proposals. KT Earth XT XT Toggle flipflop Keyboard interface , 6 39 DP HFO 7 38 MODE XT 8 37 KT 9 36 HKS MFO 10 35 , operation IHKS £ 0.5 mA VDD HKS PD VDD 37 KT Keytone output signal which is sent out in pulse dialing mode with a keytone frequency of 582 Hz. KT sink/drive current is about 100 uA at VDD = 2.5 V KT VDD PD 9 4791B­CORD­02/04 Pin Description Pin 38 Symbol Function Atmel
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transistor kt 312 b clim LN 358 n 600w power amplifier circuit diagram
Abstract: consequences arise from the proposals. KT Earth XT XT Toggle flipflop Keyboard interface , 5 40 Mask HFI 6 39 DP HFO 7 38 MODE XT 8 37 KT 9 36 , KT Keytone output signal which is sent out in pulse dialing mode with a keytone frequency of 582 Hz. KT sink/drive current is about 100 uA at VDD = 2.5 V KT VDD PD 9 4744A­CORD­09/03 , , active high During MASK an internal NPN transistor shortens VL against VI. MASK PD 41 R1 Atmel
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U3761MB-T 4744a SSO44 ulg 2003 MPSA42 168 key board matrix transistor low noise preamp microphone
Abstract: to be merged with the active transistor area, significantly reducing wiring capacitance while allowing large transistor sizes for increased performance. This technique allows high component utilization , contains three uncommitted transistor pairs (1.5 equivalent gates) and interconnect paths for inter and , transistor and interconnect assignment. Cell utilization refers to the percentage ratio of programmed basic , lPLH 1.50 3.08 4.67 5.35 8.08 Output Driver 1 tpHL 1.73 2.81 3.83 4.29 6.07 ns Inverting TTL -
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dc cdi schematic diagram ac cdi schematic diagram oz 8602 gm cdi schematic dm165 DM240 9957S D-6050 8602-R1 5M11-86/P
Abstract: % M Jf â'¢i â  a 0 if 2 f A F125 Germanium p-n-p alloy-diffused transistor. For , \2 â'™t l ,4 -2 0 10 60 I 0/ - Germanium p-n-p alloy-diffused transistor , alloy-diffused transistor. For use as a mixer/oscillator and i.f. amplifier snieia in m.w. and l.w. a.m , Germanium p-n-p mesa transistor. For use! as a mixer/oscillator at frequencies up to| 860 MHz , MHzj 11 5 dB 7 dB Germanium p-n-p alloy-diffused transistor] For use as a mixer -
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PCC88 TAA435 TAA700 mullard germanium TCA160 TBA550 AC187 BC157 BC158 BC159 BC186 BC187
Abstract: KT) (1), 3/24 AN1049 APPLICATION NOTE which gives the normal operating frequency, and: fSB 1 CT (0.693 RA + KT) (2) which gives the standby operating frequency, that is the one , / / RB = RA RB RA + RB (3), and KT, defined as: 90, V15 = VREF KT = 160, V15 = GND/OPEN , start-up circuit is (c) a low VCC requires the use of the NPN transistor and the 47 k resistor to turn off STMicroelectronics
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65W flyback transformer construction 220v ac to 5v dc 100w smps DCM flyback transfer function boundary mode flyback pa capacitor 400v transformer 220V to 9V L5991
Abstract: 1 CT (0.693 (RA / / RB) + KT) (1), 3/24 AN1049 APPLICATION NOTE which gives the normal operating frequency, and: fSB 1 CT (0.693 RA + KT) (2) which gives the standby operating , // RB means: RA / / RB = RA RB RA + RB (3), and KT, defined as: 90, V15 = VREF KT = 160 , be lower at low VCC. If the start-up circuit is (c) a low VCC requires the use of the NPN transistor STMicroelectronics
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UC3842A MONITOR POWER SUPPLY 1N53XX smps 110v 1.6a flyback transformer 4kV 8 pin 4v power switch ic UC3842A application note
Abstract: (RA / / RB) + KT) (1), 3/24 AN1049 APPLICATION NOTE which gives the normal operating frequency, and: fSB 1 CT (0.693 RA + KT) (2) which gives the standby operating frequency, that , means: RA / / RB = RA RB RA + RB (3), and KT, defined as: 90, V15 = VREF KT = 160, V15 , of the NPN transistor and the 47 k resistor to turn off the start-up MOS, but is definitely STMicroelectronics
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smps isolated 15v output 90w 12v to 220v step up transformer Electronic ballast 40W Control 4N35 IC 4N35 12v class d amplifier 40W
Abstract: . Driver P.P. Output Admiral 801, 802 808 Admiral Portable Radio 2N412 2N411 2N412 , Transistor Power Amplifier 2N467 2N466 2N669 2N669 (2) 2N241A 2N241A 2N285A 2N285A (2) 1st , Bias Oscillator Kowa KT-31 Lafayette Portable Radio 2N219 2N218 2N217 2N219 2N218 , . Output Olympic 808 Olympic Portable Radio 2N486 2N483 CK879 2N482 CK879 2N362 2N632 , 2N217 2N217 Converter IF Amp. Driver Output Regency HFT-1A HFT-1K Regency Transistor -
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2T203 Bendix Transistors diodes 1N34A color sp215 WESTINGHOUSE ELECTRIC oscillator 2N252 2N309 2N140 521-6T2 528-6T2 2N139
Abstract: Oscillator temperature compensation Rechargeable battery packs Transistor gain stabilization Transistor , +150°C, KS and KT series -80°C to +135°C · Storage and operation temperatures for best long term stability: KT and PT series = -80° to +120°C, KS and PS series = -80° to +75°C "KS" & "KT" SERIES "KS" & "KT" SERIES 0.250" NOM 30 AWG (0.010") KYNAR INSULATED WIRE EPOXY COATING 0.095" MAX U.S. Sensor
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THERMISTORS SCK 055 103JM1A h3475 KC222 Pt 3750 rtd ST2R503B DO-35 DO-41 LL-34 LL-31/LL-41
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