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Part Manufacturer Description PDF & SAMPLES
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN

transistor KD 617

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: S P RA GU E. S E M I C O N D S / ICS 9 3 D 03824J) ULN-2083A-1 TRANSISTOR ARRAY ULN-2083A-1 TRANSISTOR ARRAY This device is a general-purpose transistor array for use in medium-current switching and , kd o w n V o lta g e C o lle c to r-E m itte r B re a kd o w n V o lta g e Sym bol T e s t C o n d , its V V BVçbo B V «, Additional information on transistor arrays ULN-2031A through U LN , Northeast Cutoff W orcester, M assachusetts 01606 (617) 853-5000 -
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ULN2083A-1 kd 617 ULN 232 KD transistor Transistor Array differential amplifier ULN2031A 0S0M33 ULN-2083A LN-2086A ULS-2045H ULS-2083H
Abstract: , level shifting, voltage regulation, temperature stabilization of transistor base-emitter biasing network , MECHANICAL CHARACTERISTICS ILfiHLMAX Ã29 DIA LUSSI MIN 2, KD H2aa .it y &SUSLÃ22 Dull 457/0 559 , .: 617 592-6090 â'¢ tax: 617 592-0677 -
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APD200 APD300 APD400 AP4156 AP4157 AP5179 AMERICAN POWER DEVICES diode for clippers
Abstract: GC 118e AC 187K AC 187K AC AC MP MP GC GC MP KD KD KD 187K 188K 26B 26B 301 e 301 d 26B 617 617 617 , 30 30 6,4 4 6 10 10 3 ,5 10 4 3,4 1 6 3,6 il GD 244C GD 244C KD 617 KD 617 GD 244C AD 161 AD 162 KD 617 A< 3*5 1 1 1 1,5 BC211-16 ,SF1 29D.KT817W 2 · 2 BC313-16,KFY1 8,KT81 6W BC313 , 1 l 40-6 140-16 141-6 141-10 141-16 I47B 148B I49B I49C KFY 18 KFY 18 KD 617 KD 617 KD 617 KD 617 GT 321A GF 147 KD 617 KD 617 KD 6 m KD 617 2N 3731 2N 3731 2N 3731 2N 2905A BC BC BC BC BC j BC ;bc BC BC -
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KT 819 transistor 2N2222A 338 SF129D SF137D SF127E KFY18 321 400MH
Abstract: electronic organ M I C O N D S / ICS 93D 038173>'7^ , m itte r B re a kd o w n V o lta g e , B 7 CE0 (n ote 1 ) a t lc = 5 m A , . 5 m V M a x . Additional information on transistor arrays U L N -2031A through ULN-2086A, ULS , Cutoff Worcester, M assachusetts 01606 (617) 853-5000 5- 15 -
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ALLEGRO M I C R O S Y S T E M S INC ULN-2047A
Abstract: M an A M P com pany RF MOSFET Power Transistor, 20W, 28V 100 -500 MHz Features · · · · · , L65 318 L63 & 46 4.37 13 MM ,815 sés ,617 247 245 £45 .055 .055 .115 ,033 077 .142 .003 ·O C X M AX , °C Parameter D ra in -S o u rce B re a kd o w n V o ltage D ra in -S o u rce L ea kage C u rre n t G a te*S , ) 3226-1451 Europe: 9-275 Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor , MOSFET Power Transistor, 20W, 28V UF2820P V2.00 Typical Device Impedance Frequency (MHz) 100 -
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t2a transistor transistor t2a U 318 m
Abstract: , Norwood. M A 02062-9106, U.S.A. Tel: 617/329-4700 Fax; 617/326-8703 TMP12-SPECIFICATIONS P aram eter , , determines the setpoints and hysteresis value. The equations used to calculate the resistors are: R1 (kD) = (I 'r e f ~ V se t h ig h )!I vref - (2.5 V - V se t h ig h )!I vref R2 (kD.) = ( V s e t h ig h ~ V Se t l o w ) ! I vr e f R3 (kD.) = V setlo w ^ I vref V R E F s 2 .! (V R E F -V s e th ig h ) M , mVPC) - 1.641 V R 1 (kD.) = ( V R E F - V se th ig h ) ^ v r e f - (2-5 V - 1.766 F)/ 22 \iA = 33.36 k -
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amplifier - ATH 226 IRGB40S MOC302 htr 1031 MOC3021 equivalent nomograph TMP12 TIP-110
Abstract: Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 S S M 10 , . 2 7 ° C / W TRANSISTOR COUNT Number of Transistors SSM2018T , later. The control port follows a 30 mV/dB control law. The applica­ tion circuit shows a 3 kD and 1 , kD feedback resistor around amplifier A3. When this current is reduced, the output voltage is also , capacitor is â'Millerâ' connected between the base and col­ lector of an internal transistor. By -
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SSM2018T/SSM SSM2118T SSM2018T/SSM2118T
Abstract: AD420 is going to be used at extreme tem peratures and supply voltages, an external output transistor , : 617/329-4700 Fax: 617/326-8703 AD420â'" SPEC IFICATIONS (Ti = THin-Tmax, Vet = + P a ram eter , urrent O utput. 19 B O O ST Connect to an external transistor to reduce the power dissipated in the AD420 output transistor, if desired. 20 21 22 CAP 1 CAP 2 CAP3 These pins are used , ­ proximately one volt rem aining of drive capability (when the gate o f the o u tput PM O S transistor nearly -
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Abstract: . MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 oaibfloo O O S O O b b 4TD 0P183 , ±2.5 V to ±18 V Rl = 2 kD, 0.2 < V0 < 3.8 V RL= 2 k£î RL = 2kD Vs = ±15 V, V0 = 0 V, Rl = - , (Die Backside) Is Connected to V-. Transistor Count, 30. NOTES â'˜Absolute maximum ratings apply , Connected to V-. Transistor Count, 55. -4 - REV. A Typical Characteristicsâ'"0P183/0P283 80 â -
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OP183 OP283 14E-3 075E-3 1E-15
Abstract: ., 1996 One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617 , Backside) Is Connected to V+. Transistor Count, 7 70. Units 8-Pin Plastic DIP (P) 8-Pin SOIC (S) 8 , 0.062 x 0.092 inch, 5,704 sq. mils Substrate (Die Backside) Is Connected to V+. Transistor Count, 214 , The OPx96 family of op amps uses a composite PNP/NPN input stage. Transistor Q1 in Figure 36 has a , base of transistor Q5 being driven above Vcc- There­ fore, the inverting and noninverting inputs m -
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0P196/0P296/0P496 OP196 OP196/OP296/OP496
Abstract: . Tel: 617/329-4700 Fax: 617/326-8703 AD620-SPECIFICATIONS M od el C o n d itio n s (Typical @ , olta g e N o is e (G = 1000) F ig u re 7 7. CMR vs. F requency, RTI, Z e ro to 7 kD. S o urce Im b a , a l R esponse, G = 1, RL = 2 kD., CL = 100 p F F ig u re 23. L a rge S ig n a l R esponse a n d S , offset errors. T h e A D 620 allows direct access to the input transistor bases and em itters enabling -
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D620 transistor ad620 AD620 blood pressure ad620a D620 ad 620 using pressure measurement AD620
Abstract: 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 AD824â'" SPECIFICATIONS ELECTRICAL , V0 = Rl = Rl = Rl = T m in 0.2 V to 2.0 V 2 kQ 10 kQ 100 k£2 to T MAX, R l = 100 kD , Units V cm = 0 V to 2 V V = + 2.7 V to +12 V RL = 2 kD I s o u r c e - 20 (tA I s i n k = 20 (iA , . Substrate (Die Backside) is Connected to V+. Transistor Count, 143. Units 14-Pin Plastic D IP (N) 14 -
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Abstract: qrb1114 ACD0831 Activity #4: The Transistor as a Switch Parallax
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cadmium sulfide photoresistor circuit diagram of incubator circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book bs170 replacement 14-DAY QRB1114 2N3904 BS170MOSFET ULN2003A
Abstract: . MBRT.HR/Rev. 1.0 6-17 5flbfl45b HT MBRT GATE ARRAY SERIES P R O D U C T O U T L IN E , by the use of Kd = 1/2 (Kd1 + Kd2) T H E M A X IM U M P R O P A G A T IO N D E L A Y IS THUS tmax : Kp x Kv x Kt x Kd x Ttyp F IG U R E 5 A : P r o p a g a t i o n D e la y F a c t o r V e r s u s S , p e r a tu re TOTAL DOSE M ULTIPLIER T O TA L D O S E IN K R A D S (S I) KD + KD1 K D2 , area allows the design of a 6 transistor SRAM memory cell by using only 1 gate. Thus complete and -
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IC 3-8 decoder 74138 pin diagram full adder using ic 74138 circuit diagram for IC 7483 full adder 0850R static ram 128x16 lsi logic ic 7442 encoder 0850RT 1300RT 2000RT 2700RT 3200RT 4000RT
Abstract: 64-2092 MC68230P8 Z0765A08PSC IGBT semikron 613 GB 123 CT Philips Twin Eye PLN 2032 RIBBON 109-056,TRANSISTOR MTP3055V 109-258,SILICON DIODE OA202 110-113,IC AD1848KP 110-141 RS Components
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ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 ericsson RBS 6000 series mosfet PAL 010a 1500UF 3300UF 15000UF 10000UF 100UF 4700UF
Abstract: y , P.O. Box 9106, N orw oo d. M A 02062-9106, U.S.A. Tel: 61 7/32 9-4 700 Fax: 617/326-8703 , 2.3/V D D 150 2312.1 20 V min/max KD V min/max ppm /'C typ 4.5 0.5 us max us min +0.05 X V , memory technology and is based on a single transistor cell architecture. T his technology is basically an , transistor cell architecture, a Flash memory array, like EPR O M can be im plem ented to achieve the space -
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u812 52PQ ic AD 812 AN UC812 0/A8/A16 1/A9/A17 2/A10/A18 52-PQ
Abstract: â'¢ TEL. (617) 926-0404 TW X (710) 327-1296 â  TELEX 922-414 2 P R iN T E D IN U .S .A . , Regional Office, 580 Pleasant Street, Watertown, Mass. 02172, (617) 926-0404 Western Regional Office , , MASS. 02172 â'¢ TEL. (617) 926-0404 TWX (710) 327-1296 â'¢ TELEX 922-414 IOWA See Illinois â , . (617) 926-0404 TW X (710) 327-12% â'¢ TELEX 922-414 VERM ONT See North Carolina SOUTH DAKOTA , '¢ 580 PLEASANT ST. W ATERTOW N, MASS. 02172 â'¢ TEL. (617) 926-0404 TW X (710) 327-1296 â'¢ TELE X -
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hv triac 800v 40w 2N3028 AO110 equivalent of pic601 transistor BU 608 triacs bt 804 600v
Abstract: 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 AD650­SPECIFICATIONS (@ , transistor, depends upon the amplitude of the input signal. Since the number of charge packets delivered per , be accomplished. The frequency output is furnished via an open collector transistor. Figure 1 , output transistor to 8 mA if a TTL maximum VOL of 0.4 V is desired. For example, if a 5 V logic supply , grounds are provided on the AD650. The emitter of the open collector frequency output transistor is the Analog Devices
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AD650KN KD 109 2A Optocouplers AD650SD AD650KP AD650JP MIL-STD-883
Abstract: rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 AD2S80A­SPECIFICATIONS (typical at +25C unless otherwise noted) Parameter , Reference . . . ± 10 Degrees (max) Ambient Operating Temperature Range Commercial (JD, KD, LD) . . . . . . , (JD, KD, LD) . . . . . . . . . . . . . . 0°C to +70°C Industrial (AD, BD) . . . . . . . . . . . . . . , BUSY NOTE: DO NOT USE ABOVE CCT WHEN INHIBIT IS "LO." BUSY Output Figure 2. Diode Transistor Analog Devices
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ac 120* phase shift circuit diagram 2S81 DB10 resolver-to-digital AD2S82A AD2S81A C1437 AD2S80AJD AD2S80AKD AD2S80ALD
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