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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16

transistor E 13009 l

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC , KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAGE U fe . D C CURRENT Q A IN fc(A}, C O L L E C T O R C U R R E N T lc(A), C O L L E C T O R C U R R E N T COLLECTOR OUTPUT CAPACITANCE TURN ON TIME Cos(pF), CAPACITAN CE V r-'iW C O L L E C T O R B A S E V -
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transistor E 13009 transistor d 13009 D 13009 K transistor 13009 E 13009 L 13009 TRANSISTOR KSE13008/13009 KSE13009
Abstract: VOLTAGE h FE, D C CURRENT G A IN lr.(A>, C O L L E C T O R C U R R E N T COLLECTOR OUTPUT CAPACITANCE TURN ON TIME C 0 B(p P )t CA P A C ITA N C E V .« (V X C O L L E C T O R B A S E V O L T A G E lc , KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for -
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transistor b 595 e 13009 f E 13009 2 J 13009 - 2 p 13009 transistor j 13009
Abstract: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 â , 240 ELECTRONICS 7 ^ 4 1 4 2 002fll5b 042 â  KSE13008/13009 NPN SILICON TRANSISTOR BASE , CURRENT GAIN 0.1 0.2 0.5 1 2 5 10 20 50 100 lc(A), C O L L E C T O R C U , 1 2 5 10 20 50 100 200 500 1000 Vrn iV), C O L L E C T O R B A SE V O L T A G E lc(A), C O L L E C T O R C U R R E N T SAFE OPERATING AREA ts, tfOiS), TURN OFF -
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e 13009 d
Abstract: (Figs 4 and 5) lC = 8 A; VCL = 300 V; T0 = 100 °C; l Bon = 1-6 A ; V BEoff = 5 V ^ ^ J u n e 1988 619 / N AUER P H I L I P S /D IS CR ET E MJE 13008 MJE 13009 SSE D t bb53131 , mA; l B = 0 Collector cut-off current V ce = VcESMmax! V b E * -1 .5 V V c e = v CESMmax; VBE = -1 , . 4.0 MHz Collector capacitance V c b = 10 V; l E = 0 Cob typ. 100 PF ton t$ tf , specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V -
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13009 h transistor transistor mje 13009 L EB 13009 D S3T31 MJE13008 T-33-13
Abstract: ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5 , Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , r c o n n e c te d w ith m c la llic s u rf a c e JH D H C T O 2 2 0 170 Rev. D l: 01.05.1995 , Transistor Features · · · · · HIGH SPEED technology High reverse voltage Power dissipation Pu,| = 100 W -
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SR 13009 E 13009 transistor sr 13009 13008 TRANSISTOR 13009 K j 13009 TE13008 TE13009
Abstract: subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D , transistor in a T0-220 envelope, intended for use in switching regulators, inverters, motor controls , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA , 13009 j / j/ J S5E D bbSB^i ooniaa 3 T-33-13 RATINGS Limiting values in accordance with the , â'¢bm IE >E ptot tot 1 stg Rth j-mb Rth j-a max. max. max. max. max. max. max. max. max. â -
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tr 13009 transistor MJE 13009 13009 D 13009 13009 H 53T31
Abstract: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , -220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q , ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic , A 15 VCE = 5 V 31 26 Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 STMicroelectronics
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all transistor 13009 transistor switch 13009 power switching transistor 13009 ST-13009 13009 TRANSISTOR equivalent
Abstract: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , TO-220 mechanical data Dim A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 âP Q , ST13009 High voltage fast-switching NPN power transistor Features I Low spread of dynamic , 60 L = 200 ÂuH Fall time V V VCE = 5 V IC = 5 A Inductive load V V V V 1.2 STMicroelectronics
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Abstract: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L , ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic , Group L Group H IC = 8 A _ _ IC = 5 A Inductive load uA uA 400 IC = 5 A Base-emitter STMicroelectronics
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13009 applications
Abstract: °C Operating and Storage Junction Temperature Range T H E R M A L C H A R A C T E R I S T IC S , , MJE13009 T- 33 E L E C T R I C A L C H A R A C T E R I S T IC S (Tc = 25°C unless otherwise noted , , Ig = 1 Ade) (le 5 5 8 Ade, lg * 1,6 Ade) I l e * 8 Ade, le 8 5 1.6 Ade, T c - 100°C) D Y N A M IC C H , z) Output Capacitance (V c b · 10 Vdc, l£ - 0. f = 0 1 M H z) S W IT C H IN G C H A R A C T E R IS T , (Table 1, Figure 13) Voltage Storage Time Crosiovar Tim s H e " 8 A, V C| amp = 300 Vdc, l B , = 1.6 A, V -
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n752 E 13009 TRANSISTOR motorola e 13009 p AN719 E 13009 TRANSISTOR
Abstract: Page No. : 5/6 MICROELECTRONICS CORP. TO-247(TO-3P) Dimension G H A DIM A B C D E F G H I J K L M r1 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H MJ E 13009 D B r1 Date Code Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Base 2.Collector 3.Emitter E M L C I Material: · Lead solder , . : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description Hi-Sincerity Microelectronics
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HR200202 transistor MJ 13009 j 13009 to247 mj 13009 13009 to-3p Vcc-125Vdc
Abstract: Page No. : 5/6 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E MJ E 13009 C D Date Code H M I K 3 G N 2 1 Tab O P , . : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description , Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J L Min. 5.58 8.38 Hi-Sincerity Microelectronics
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tr 2 13009 HE200206
Abstract: (GHz) TYPICAL SCATTERING PARAMETERS Q1 V c e = 3 V, Ic = 1 m A , Zo = 50 i l _ , TYPICAL SCATTERING PARAMETERS Q1 V c e = 3 V, Ic = 3 m A , Zo = 50 L I_ FREQUENCY (GHz , TYPICAL SCATTERING PARAMETERS Q1 V c e = 3 V, Ic = 5 m A , Zo = 50 L I_ FREQUENCY (GHz , TYPICAL SCATTERING PARAMETERS Q1 V c e = 3 V, Ic = 7 m A , Zo = 50 L I_ FREQUENCY (GHz , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF FEATURES LOW NOISE -
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9622 transistor t 3866 power transistor NE856 NE685 NE85630 NE68530 UPA835TF UPA832TF-T1
Abstract: . TYPICAL PERFORMANCE CURVES(Ta= 25 TO TA L POW ER DISSIPATION v s. AM BIENT T EM P ER A TU R E C) C O L LEC T O R CU R R EN T v s. DC B A S E V O LTA G E I I CL § E, IC o 03 (ft (ft Q , Voltage, V be (V) C O L LEC T O R C U R R EN T v s. EMITTER V O LTAG E DC CU R R EN T GAIN v s. C O , ) Frequency, f (GHz) F E E D B A C K C A P A C IT A N C E v s. C O L LEC T O R TO B A S E V O LTAG E , CLASSIFICATION RANK Marking h FE FB R81 70 to 140 Value E X C L U S IV E N O R T H A M E R IC A N A G -
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NEC uPA 63 H NEC uPA 63 4017 ic operation CL 2183 ic NEC uPA 63 a UPA821TF UPA821TF-T1
Abstract: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES LOW NOISE: Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA OUTLINE DIMENSIONS 2.1 ±0.1 - 1 .2 5 ±0.1 (Units in mm) Package O utline TS06 HIGH GAIN: Q1 : |S 21 e |2 = 9.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2: |S 21 e |2 = 12.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 m A 0.65 A_. < r\D _ 0 -2 2 - -
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CD 5888 CB ha 12185 nt CD 5888 ic cd 4847 EB 13009 CD 8227 NE681 UPA831TF-T1
Abstract: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES LOW NOISE: Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 (Top View) HIGH GAIN: Q1 : |S 21 e |2 = 9.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2: |S 21 e |2 = 12.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 m A 0 22 0 05 R À II L e a d s ) 6-PIN THIN-TYPE SMALL -
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IC CD 3207 cd 5888 s cd 5888 ap 6928 CD 5888 cb ic NE68130
Abstract: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF FEATURES LOW NOISE: Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 - * j HIGH GAIN: Q1 : |S 21 e |2 = 9.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2: |S 21 e |2 = 8.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 10 mA 5 " f l A I I Leads) 6 -
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ic 7483 transistor ap 7686 PA832TF PA832TF-T1
Abstract: c l l o c h a n g e w il h o u l n o lic e . Docum ent No. P12690EJ1V0D S00 (1st edition) Date , a l p rop erty righ ts of th ird p a rtie s by or a risin g from use o f a device d e scrib e d , or o th e r in te lle c tu a l p ro p e rty rig h ts of NEC C o rp o ra tio n or o thers. W hile NEC , ndard", "S p e c ia l", and "S p e c ific ". The S p e c ific q u a lity grade a p p lie s only to d e , u ip m e n t, a u d io and v is u a l e q u ip m e n t, h om e e le c tro n ic a p p lia n c e s , m -
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NEC JAPAN 2415 on 5297 transistor sem 5025 LA 7687 a la 7687 La 7833 PA821TF 2SC4226
Abstract: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: Q1:NF = , Current at V cb = 10 V, I e = 0 Emitter Cutoff Current at V eb = 1 V, Ic = 0 DC Current Gain1at V ce = 3 V , o ro FREQUENCY _L _ l o o o C O ro IO _k O O C cn ho b C b cn o o o o o o o o o o o o o o b> cn a o o o o o o i . z C O io L o o o co N> ro _L _L ai _ l o o o cn ro b (O 00 © cn o o o o o o o o o , < £ >CO b v l O IO A o> CO ro 05 O 4*. * o o o o o o O o 3 ^ a i^ c r i4 ^ -
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transistor BU 5027 cd 5220 buffer ic pa831 PA831TF UPA834TF
Abstract: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6 , gain Q1 : |S21e|z = 9.0 dB TYP. @f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2 : |S21 e|z = 8.5 dB TYP. @f = 2 , on-chip (2SC 4226,2SC 4959) o' o o - CM C\J 1= 1 GHz, V c e = 3 V , Ic = 7 mA ! = 2 GHz, V ce = , Current Gain vs. Collector Current ¿100 e 'm O ) 1 50 o o 20 10 0.5 1 5 10 50 Collector current lc(mA) Collector current lc(mA) X (3 ? C I a. j= S s ? l JZ c ca n c -
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ic 5219 8mm TRANSISTOR 2sC 6090 transistor 2sc 4977 13009 power transistor 2sc 6090 2sc 1364 transistor 2SC4959 PA835TF PA832TF-T
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