500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 47 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.47 Price Each : $2.77
Shipping cost not included. Currency conversions are estimated. 

transistor 355

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Applications · Wideband and , GHz to 6 GHz As part of the PowerBandTM RF transistor family of products, this device is capable , , GaN RF Power Transistor Specifications Absolute Maximum Ratings Sym V+ Thermal Information , 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Electrical Specifications Recommended operating , digital World to the Global Network® T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor TriQuint Semiconductor
Original
idq04 Gan hemt transistor x band T1G6003028-SP datasheet Transistor s-parameter
Abstract: Afa Features Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 , Power Transistor · Common Base Configuration · Broadband Class C Operation · High Efficiency , , PIN =355 mW, F=960, 1090,1215 MHz V.,=28 V, P,IN =355 mW,' F=960, 1090, 1215 MHz CC ' Voc=28 V, Pin=355 mW, F=960,1090,1215 MHz Vcc=28 V, Pin=355 mW, F=960,1090, 1215 MHz V.=28 V,' PIN =355 mW,' F=960,' 1090, 1215 MHz CC V,=28 V,' P.n=355 mW,' F=960,' 1090,1215 MHz CC IN Vcc=28 V, Pin=355 mW, F=960,1090 -
OCR Scan
CC 1215 SHM-2E M2E05
Abstract: for complicated biasing circuitry. â'¢ 960 MHz â'¢ 35.5 W - Pout â'¢ 26 V â'"Vcc â'¢ 7.5 dB Gain â'¢ Push-Pull Configuration MAXIMUM RATINGS 35.5 W â'" 960 MHz UHF LINEAR POWER TRANSISTOR NPN , = 26 V, Pout = 35.5 W, f = 960 MHz, 'Qtota| - 150 mA) 1c 45 â'" â'" % Notes 1 Each transistor chip , TECHNICAL DATA Advance Information The RF Line UHF Linear Power Transistor The TP3024A is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a -
OCR Scan
uhf amplifier design Transistor 35 W 960 MHz RF POWER TRANSISTOR NPN motorola rf Power Transistor Gan on silicon transistor Gan transistor F33-11
Abstract: . · Specified 26 Volts, 960 MHz Characteristics: Output Power = 35.5 W Minimum Gain = 7.5 dB IQtotal = 150 mA 35.5 W, 960 MHz UHF LINEAR POWER TRANSISTOR · Push­Pull Configuration MAXIMUM , Linear Power Transistor TP3024B The TP3024B is a balanced transistor designed specifically for use , (VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA) GPE 7.5 - - dB Collector Efficiency (VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA) c 45 - - % Motorola
Original
tp3024 TP3024B/D
Abstract: C on fig u ra tio n 35.5 W, 960 MHz UHF LINEAR POWER TRANSISTOR MAXIMUM RATINGS R ating , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor T h e T P 3 , PF FUNCTIONAL TESTS (3) Common-Emitter Amplifier Power Gain (V c e = 26 V, Pout = 35.5 W, f = 960 MHz, 'Qtotal = 150 mA) Collector Efficiency (V c e = 26 V, Pout = 35.5 W, f = 960 MHz, 'Qtotal = 150 , specified RF operating condition. 2. Each transistor chip measured separately. 3. Both transistor chips -
OCR Scan
Abstract: BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor Rev. 01 - 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base , ) (%) (dBc) (dBc) 1930 to 1990 28 35.5 16.5 31 -37 [1] -40 [1] Test , output power = 35.5 W x Power gain = 16.5 dB (typ) x Efficiency = 31 % x IMD3 = -37 dBc x ACPR = -40 , for ease of use BLC6G20-140; BLC6G20LS-140 Philips Semiconductors UHF power LDMOS transistor Philips Semiconductors
Original
sot896-1 sot895-1 6G20LS-140
Abstract: BLF6G20LS-140 Power LDMOS transistor Rev. 01 - 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at , 1990 28 35.5 16.5 30 -37[1] -40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = , supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.5 W N Power gain = 16.5 dB , Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and NXP Semiconductors
Original
C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table 2002/95/EC
Abstract: '¢ _ , J 800 MHz COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1410-3 is an NPN Silicon Epitaxial Planar Transistor that is designed for amplifier/multiplier applications in the 806-866 MHz mobile range. This transistor is wired common base for optimum gain and efficiency over the frequency range , VSWR at rated conditions .450 .235 .425 .225 o .365 .355 125 .115 n n u ABSOLUTE MAX. RATING , ELECTRICAL CHARACTERISTICS .006 .004 Ì .365 .355 4-1 .730 .720 .281 .249 r .180 .160 .130 .120 -
OCR Scan
Abstract: Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction , Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage , Maximum 0.78 52 3.55 12 12 13 2.85 19 3.55 ­12 ­12 50 44 15 15 0.26 0.033 , 10 Drain Voltage (v) VDS n-ch Transistor IV characteristics of a 20/4.0 device 92 Drain Voltage (v) VDS p-ch Transistor IV characteristics of a 20/4.0 device C3017-4-98 IMP IMP
Original
C3017
Abstract: =25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor , VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage Body , 6.5 27 Typical 0.72 0.0523 0.030 Maximum 0.78 52 3.55 12 12 13 2.85 19 3.55 , n-ch Transistor IV Characteristics of a 20/4.0 device 90 0 1 2 C3015 0 0 1 2 , Transistor Characteristics of a 20/4.0 device Poly gate Contact Bottom poly p Sidewall spacer -
Original
Abstract: 2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm Output Power Gain : PO = 35.5 dBmW (Min.) : GP = 9.5 dB (Min , MIN TYP. MAX UNIT 35.5 - - dBmW - 58.0 - % 9.5 - - , Load Mismatch - VDS = 6.5 V, f = 915 MHz Pi = 26 dBmW PO = 35.5 dBmW (VGS = adjust) VSWR LOAD 10: 1 all phase No Degradation - CAUTION This transistor is the electrostatic sensitive Toshiba
Original
000707EAA1 915MH
Abstract: Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction , Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage , 0.0384 0.57 Maximum 0.78 52 3.55 12 12 13 2.85 19 3.55 ­12 ­12 50 44 15 15 , 0 1 2 3 4 5 6 7 8 9 10 Drain Voltage (v) VDS n-ch Transistor IV characteristics of a 20/4.0 device 92 Drain Voltage (v) VDS p-ch Transistor IV characteristics of a 20/4.0 -
Original
0.6 um cmos process
Abstract: =25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor , VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage Body , Typical 0.72 0.0523 0.030 Maximum 0.78 52 3.55 12 12 13 2.85 19 3.55 ­12 ­12 , Transistor IV Characteristics of a 20/4.0 device 90 0 1 2 C3015-4-98 0 0 1 2 7 , Transistor Characteristics of a 20/4.0 device Poly gate Contact Bottom poly p Sidewall spacer IMP
Original
Abstract: BLF8G20LS-160V Power LDMOS transistor Rev. 2 â'" 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base , ) (mA) (V) (W) 2-carrier W-CDMA 1805 to 1880 800 28 35.5 [1] IDq VDS PL , MHz to 2000 MHz frequency range BLF8G20LS-160V NXP Semiconductors Power LDMOS transistor 2 , Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 ï'°C, unless NXP Semiconductors
Original
Abstract: BLP7G07S-140P Power LDMOS transistor Rev. 1 - 21 June 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at , Gp (dB) 20.6 20.6 20.4 20.1 D (%) 29.0 29.0 29.0 29.0 ACPR (dBc) -35.5 [1] -35.5 [1] -35.5 [1] -35.5 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description gate 1 gate 2 drain 2 drain Philips Semiconductors
Original
transistor B 764
Abstract: specincauon UHF power transistor BLT53 FEATURES â'¢ Emitter-ballasting resistors for an optimum , . DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOU 22 D studless envelope with , ®iuips Semiconductors Product specification UHF power transistor BLT53 LIMITING VALUES In accordance , current peak value f > 1 MHz - 7.5 A P« total power dissipation RF operation; Tâ'ž* = 25 °C - 35.5 W , CONDITIONS MAX. UNIT ^th j-mb -
OCR Scan
MCD201 MCD195 UHF POWER UHF POWER TRANSISTOR GQ2A744 MBB012 MCD199
Abstract: BLP7G07S-140P Power LDMOS transistor Rev. 2 - 9 October 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at , Gp (dB) 20.6 20.6 20.4 20.1 D (%) 29.0 29.0 29.0 29.0 ACPR (dBc) 35.5 [1] 35.5 [1] 35.5 [1] 35.5 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description gate 1 gate 2 drain 2 drain Philips Semiconductors
Original
Abstract: ® ISO 9001 Registered Process C3013 CMOS 3um 10 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction , Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage , 6.5 27 Typical 0.72 0.0523 0.030 0.57 Maximum 0.78 52 3.55 12 12 13 2.85 19 3.55 ­12 ­12 50 44 15 15 0.026 0.51 100 52 30 30 60 0.034 0.63 Unit V V1 IMP
Original
C3013-4-98
Abstract: , Unc, eSemi-C on USA NPN TELEPHONE: (973) 376-2922 (212) 227-6005 MRF894 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG ! MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused , ! f MAXIMUM DIM MINIMUM nches / mm inches / mm 7.5 A A .355/9.02 B 1 , G 970/2464 H .355/9.02 PDISS 88 W @ Tc = 25 °C 1 .004/0.10 Tj -65 °C to New Jersey Semiconductor
Original
Abstract: MRF894 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application. A .040x45° B C 2XØ.130 , .125 G H I J K DIM MINIMUM MAXIMUM inches / mm inches / mm 7.5 A A .355 , .004 / 0.10 K -65 °C to +200 °C .980 / 24.89 .355 / 9.02 I 88 W @ TC = 25 °C .970 Advanced Semiconductor
Original
Showing first 20 results.