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transistor 355

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Abstract: T1G6003028-SP T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Applications · Wideband and , GHz to 6 GHz As part of the PowerBandTM RF transistor family of products, this device is capable , , GaN RF Power Transistor Specifications Absolute Maximum Ratings Sym V+ Thermal Information , 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Electrical Specifications Recommended operating , digital World to the Global Network® T1G6003028-SP T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor ... TriQuint Semiconductor
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12 pages,
938.72 Kb

Transistor s-parameter T1G6003028-SP datasheet Gan hemt transistor x band idq04 T1G6003028-SP TEXT
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Abstract: Afa Features Avionics Pulsed Power Transistor PH0912-2 PH0912-2.5 Preliminary 2.5 Watts, 960-1215 , Power Transistor · Common Base Configuration · Broadband Class C Operation · High Efficiency , , PIN =355 mW, F=960, 1090,1215 MHz V.,=28 V, P,IN =355 mW,' F=960, 1090, 1215 MHz CC ' Voc=28 V, Pin=355 mW, F=960,1090,1215 MHz Vcc=28 V, Pin=355 mW, F=960,1090, 1215 MHz V.=28 V,' PIN =355 mW,' F=960,' 1090, 1215 MHz CC V,=28 V,' P.n=355 mW,' F=960,' 1090,1215 MHz CC IN Vcc=28 V, Pin=355 mW, F=960,1090 ... OCR Scan
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1 pages,
87.36 Kb

SHM-2E CC 1215 transistor 355 PH0912-2 TEXT
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Abstract: for complicated biasing circuitry. • 960 MHz • 35.5 W - Pout • 26 V —Vcc • 7.5 dB Gain • Push-Pull Configuration MAXIMUM RATINGS 35.5 W — 960 MHz UHF LINEAR POWER TRANSISTOR NPN , = 26 V, Pout = 35.5 W, f = 960 MHz, 'Qtota| - 150 mA) 1c 45 — — % Notes 1 Each transistor chip , TECHNICAL DATA Advance Information The RF Line UHF Linear Power Transistor The TP3024A TP3024A is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a ... OCR Scan
datasheet

1 pages,
61.34 Kb

Gan transistor Gan on silicon transistor motorola rf Power Transistor 35 W 960 MHz RF POWER TRANSISTOR NPN uhf amplifier design Transistor transistor 355 TP3024A F33-11 TEXT
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Abstract: . · Specified 26 Volts, 960 MHz Characteristics: Output Power = 35.5 W Minimum Gain = 7.5 dB IQtotal = 150 mA 35.5 W, 960 MHz UHF LINEAR POWER TRANSISTOR · Push­Pull Configuration MAXIMUM , Linear Power Transistor TP3024B TP3024B The TP3024B TP3024B is a balanced transistor designed specifically for use , (VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA) GPE 7.5 - - dB Collector Efficiency (VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA) c 45 - - % ... Motorola
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datasheet

2 pages,
50.18 Kb

tp3024 motorola rf Power Transistor TP3024B TP3024B/D TEXT
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Abstract: C on fig u ra tio n 35.5 W, 960 MHz UHF LINEAR POWER TRANSISTOR MAXIMUM RATINGS R ating , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor T h e T P 3 , PF FUNCTIONAL TESTS (3) Common-Emitter Amplifier Power Gain (V c e = 26 V, Pout = 35.5 W, f = 960 MHz, 'Qtotal = 150 mA) Collector Efficiency (V c e = 26 V, Pout = 35.5 W, f = 960 MHz, 'Qtotal = 150 , specified RF operating condition. 2. Each transistor chip measured separately. 3. Both transistor chips ... OCR Scan
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1 pages,
32.08 Kb

TEXT
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Abstract: BLC6G20-140 BLC6G20-140; BLC6G20LS-140 BLC6G20LS-140 UHF power LDMOS transistor Rev. 01 - 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base , ) (%) (dBc) (dBc) 1930 to 1990 28 35.5 16.5 31 -37 [1] -40 [1] Test , output power = 35.5 W x Power gain = 16.5 dB (typ) x Efficiency = 31 % x IMD3 = -37 dBc x ACPR = -40 , for ease of use BLC6G20-140 BLC6G20-140; BLC6G20LS-140 BLC6G20LS-140 Philips Semiconductors UHF power LDMOS transistor ... Philips Semiconductors
Original
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9 pages,
44.69 Kb

sot895-1 sot896-1 BLC6G20LS-140 BLC6G20-140 TEXT
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Abstract: BLF6G20LS-140 BLF6G20LS-140 Power LDMOS transistor Rev. 01 - 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at , 1990 28 35.5 16.5 30 -37[1] -40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = , supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.5 W N Power gain = 16.5 dB , Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and ... NXP Semiconductors
Original
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8 pages,
59.5 Kb

smd transistor equivalent table RF35 C4532X7R1H475M BLF6G20LS-140 C5750X7R1H106M TEXT
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Abstract: €¢ _ , J 800 MHz COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1410-3 SD1410-3 is an NPN Silicon Epitaxial Planar Transistor that is designed for amplifier/multiplier applications in the 806-866 MHz mobile range. This transistor is wired common base for optimum gain and efficiency over the frequency range , VSWR at rated conditions .450 .235 .425 .225 o .365 .355 125 .115 n n u ABSOLUTE MAX. RATING , ELECTRICAL CHARACTERISTICS .006 .004 Ì .365 .355 4-1 .730 .720 .281 .249 r .180 .160 .130 .120 ... OCR Scan
datasheet

1 pages,
50.02 Kb

transistor 355 SD1410-3 TEXT
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Abstract: Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction , Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage , Maximum 0.78 52 3.55 12 12 13 2.85 19 3.55 ­12 ­12 50 44 15 15 0.26 0.033 , 10 Drain Voltage (v) VDS n-ch Transistor IV characteristics of a 20/4.0 device 92 Drain Voltage (v) VDS p-ch Transistor IV characteristics of a 20/4.0 device C3017-4-98 C3017-4-98 IMP ... IMP
Original
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2 pages,
32.71 Kb

C3017 TEXT
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Abstract: =25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor , VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage Body , 6.5 27 Typical 0.72 0.0523 0.030 Maximum 0.78 52 3.55 12 12 13 2.85 19 3.55 , n-ch Transistor IV Characteristics of a 20/4.0 device 90 0 1 2 C3015 C3015 0 0 1 2 , Transistor Characteristics of a 20/4.0 device Poly gate Contact Bottom poly p Sidewall spacer ... Original
datasheet

2 pages,
33.38 Kb

C3015 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
CJC=9.59P VJC=.3 MJC=.5 TF=530P TR=170N) * Motorola 45 Volt .2 Amp 300 MHz SiNPN Transistor 350 MHz SiNPN Transistor 09-09-1991 *PINOUT TO-92 3 2 1 * *SRC=BC109C BC109C;BC109C BC109C;BJTs NPN TF=4.7E-10 7E-10 TR=6.2E-08 2E-08) * Philips 20 Volt 0.10 Amp 340 MHz SiNPN Transistor 06-27-1990 *PINOUT TO-18 3 MHz SiNPN Transistor 06-27-1990 *PINOUT TO-18 3 2 1 * *SRC=BC107A BC107A;BC107A BC107A;BJTs NPN;Gen. TF=4.7E-10 7E-10 TR=6.2E-08 2E-08) * Philips 45 Volt 0.10 Amp 340 MHz SiNPN Transistor 06-27-1990 *PINOUT TO-18 3
/datasheets/files/spicemodels/misc/modelos/spice_complete/bjtn.lib
Spice Models 18/04/2010 92.14 Kb LIB bjtn.lib
PBSS4540Z PBSS4540Z     40 V low VCEsat NPN transistor NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5540Z PBSS5540Z. 5000 450typ. 5000 450typ. BISS 250 NPN 40 355 PBSS5540Z PBSS5540Z 355 1350 150 1350 NPN BISS 250 40 NPN 250 355 PBSS5540Z PBSS5540Z 5000 450typ. 70 40 150 150 70 low VCEsat NPN transistor 14-Nov-01 Product Specification 12 73.8 View
/datasheets/files/philips/pip/pbss4540z_3-v1.html
Philips 14/02/2002 8.78 Kb HTML pbss4540z_3-v1.html
Friendly Features Low Resistance Pass Transistor: 0.25Ω reference voltage. The LT1185 LT1185 uses a saturation-limited NPN transistor as the pass element. This device TO-220 5 C $4.33 $3.55 View LT1185CT LT1185CT#06PBF 06PBF TO-220 0 C $4.33 $3.55 View LT1185CT LT1185CT#PBF TO-220 5 C $4.33 $3.55 View LT1185IQ LT1185IQ DD PAK 5 I $5.83 $4.75
/datasheets/files/linear/product/1464.html
Linear 17/09/2010 17.92 Kb HTML 1464.html
355 BFP180 BFP180 SOT143 775 855 BFP181 BFP181 SOT143 Cerec-X 355 435 BFQ182 BFQ182 Cerec-X 250 350 are located in files named XXXXXXXX.TXT, where XXXXXXXX is the transistor name. Usage: This transistor into your circuit description file. The node numbers are: Base=100, Collector=200, Emitter=300 ! To complete the transistor description, the SUPER-COMPACT linear model is also added to the
/datasheets/files/siemens/ehdata/nl/content.txt
Siemens 22/09/1992 4.41 Kb TXT content.txt
355 BFP180 BFP180 SOT143 775 855 BFP181 BFP181 SOT143 Cerec-X 355 435 BFQ182 BFQ182 Cerec-X 250 350 are located in files named XXXXXXXX.TXT, where XXXXXXXX is the transistor name. Usage: This transistor into your circuit description file. The node numbers are: Base=100, Collector=200, Emitter=300 ! To complete the transistor description, the SUPER-COMPACT linear model is also added to the
/datasheets/files/siemens/ehdata/nl_bjt/content.txt
Siemens 22/09/1992 4.41 Kb TXT content.txt
! SIEMENS Small Signal Semiconductors ! BFP93A BFP93A ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 3.5 V IC = 8 mA ! Common Emitter S-Parameters -69.9 1.700 0.6728 147.0 2.198 49.8 0.0841 35.5 0.2858 -72.3 1.800 0.6817 144.0 2.085 47.3 0.0866 35.5 0.2864 -74.4 1.900 0.6812 140.9 1.972 44.2 0.0894 35.7 0.2885 -77.3 2.000 0.6877 138.2 1.866 41.4 0.0923 35.5 0.2879 -79.8 2.200 0.6986 132.3 1.689 35.9
/datasheets/files/infineon/ehdata/spar/bfp93a/ph3v58m0.s2p
Infineon 14/08/1996 2.78 Kb S2P ph3v58m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP182W BFP182W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 0.5 V IC = 8 mA ! Common Emitter S-Parameters 115.6 0.0531 40.1 0.5126 -50.0 0.400 0.6254 -132.3 8.211 106.5 0.0574 35.5 0.4276 -54.5 0.2489 -66.2 1.300 0.6149 176.7 2.800 70.5 0.0788 35.5 0.2450 -67.4 1.400 0.6160 174.2 -119.3 4.000 0.6987 124.5 0.951 14.3 0.1584 35.5 0.2979 -124.1 4.500 0.7143 118.1 0.837
/datasheets/files/infineon/ehdata/spar/bfp182w/x4v508m0.s2p
Infineon 18/02/1996 3.01 Kb S2P x4v508m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR93AW BFR93AW ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 12 V IC = 8 mA ! Common Emitter S-Parameters: May 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 103.2 0.0578 51.2 0.4939 -35.5 0.500 0.4480 -137.9 6.463 96.5 0.0635 52.5 0.4490 -35.5 0.600 0.4391 -147.8 5.512 91.2 0.0701 53.8 0.4189 -35.5 0.700 0.4271 -155.3 4.788 86.7
/datasheets/files/infineon/ehdata/spar/bfr93aw/w912v8m0.s2p
Infineon 29/11/1997 2.78 Kb S2P w912v8m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR93AW BFR93AW ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 2 V IC = 2.5 mA ! Common Emitter S-Parameters 111.3 0.0985 40.9 0.6461 -35.5 0.500 0.6108 -121.2 3.875 102.5 0.1043 37.5 0.5895 -37.9 0.600 0.5915 -133.3 3.370 95.7 0.1085 35.5 0.5525 -39.5 0.700 0.5725 -143.0 2.987 89.6 0.5509 -157.8 2.405 79.6 0.1153 35.5 0.4849 -44.5 1.000 0.5555 -164.1 2.191 75.4 0.1164
/datasheets/files/infineon/ehdata/spar/bfr93aw/w92v02m5.s2p
Infineon 29/11/1997 2.78 Kb S2P w92v02m5.s2p
! SIEMENS Small Signal Semiconductors ! BFR92P BFR92P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 2 V IC = 5 mA ! Common Emitter S-Parameters -18.1 13.964 165.5 0.0158 79.7 0.9660 -9.2 0.100 0.7399 -35.5 13.072 152.3 0.0296 71.6 107.1 0.0721 54.1 0.5697 -34.7 0.500 0.3584 -116.6 5.691 99.0 0.0803 53.8 0.5129 -35.5 96.8 1.099 9.9 0.3676 35.5 0.2184 -109.4 4.000 0.5541 88.6 0.990 1.0 0.4123 29.2
/datasheets/files/infineon/ehdata/spar/bfr92p/rk2v05m0.s2p
Infineon 14/08/1996 2.92 Kb S2P rk2v05m0.s2p