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Part Manufacturer Description PDF & SAMPLES
1504822 Phoenix Contact Circular Connector, 3 Contact(s), Female, Socket, ROHS COMPLIANT
1504848 Phoenix Contact Circular Connector
150474K400LF Cornell Dubilier Electronics Inc CAPACITOR, METALLIZED FILM, POLYESTER, 400V, 0.47uF, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT
15-04-5401 Molex Board Connector, 40 Contact(s), 2 Row(s), Female
15-04-5261 Molex Board Connector, 26 Contact(s), 2 Row(s), Female, 0.1 inch Pitch, Crimp Terminal, Locking, Black Insulator, Plug
15045 Keystone Electronics Corp Turret Term Board

mj 1504

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: mj1504 MJ 1504 RBS0 A LIMIT IS ZOO VOLTS LESS 1 1 1 1 1 "0 200 400 600 900 1000 1200 , mj, m.ii 950 iso 4j i3 10 100 vce, collector emitter voltage (voltsi FIGURE 13 - RBSOA, REVERSE -
OCR Scan
MJ8504 MJ8505 pnp mj 1504 mj 1504 transistor pnp 222A transistor mj 1504 transistors mj 1504 MJB504
Abstract: 1.8® 4/.4 1.5'04/,4 1040 150 5® 20 3.0 1.5'04/.4 1®60 150 5® 24 3.0 2N5879 , 1060 300 15® 20 MJ14003 MJ 14002 80 70 15-100® 50/3 2.5® 50/5 3»® 50/5 1®80 300 15®20 -
OCR Scan
2N4901 2N5067 2N4902 2N5068 2N4903 2N5069 2N5862 transistor b 1560 MJ 5030 2N5869 2N5867 2N5680 B48352 I515T0R TC-25
Abstract: 25 11 150 30 1.0 2.9 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz , reserved IGBT (typ.) Cth1 = 0.232 J/K; Rth1 = 0.223 K/W Cth2 = 1.504 J/K; Rth2 = 0.077 K/W Free IXYS
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E72873 RBSOA
Abstract: ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC , reserved IGBT (typ.) Cth1 = 0.232 J/K; Rth1 = 0.223 K/W Cth2 = 1.504 J/K; Rth2 = 0.077 K/W Free IXYS
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Abstract: 11W TC = 125°C 200 EAS Single Pulse Avalanche Energy 2 85 mJ PD Total Power , Ets Total Switching Losses td(on) tr td(off) tf Turn-on Delay Time Rise Time mJ , = +25°C 10.5 gfe Forward Transconductance VCE = 20V, I C = I C2 mJ 6 S , handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Emitter Advanced Power Technology
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IGBT 100A ic lm 335 tl 72 oz APT100GF60JR MIL-STD-750
Abstract: 80C75 100-06A8 0944j 100 A VGE = ±15 V; RG = 2.2 25 11 150 30 1.0 2.9 ns ns ns ns mJ mJ Cies QGon , RthJC (per diode) IGBT (typ.) T1-T6 Cth1 = 0.232 Cth2 = 1.504 T7 Cth1 = 0.123 Cth2 = 0.944 , 300 30 2.3 1.7 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MH z VCE= 300 V; VGE = 15 IXYS
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B25/50
Abstract: f = 1MHz uC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , VCE (V) 3 4 0 Transfert Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 , (A) 8 E (mJ) 3 6 4 20 2 VCE (V) VCE = 600V VGE = 15V RG =12 TJ = 150°C 10 Microsemi
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APT0502 APT40GL120JU3
Abstract: 5.5 2.5 4.5 mJ 200 A mJ Chopper diode ratings and characteristics IRM IF VF , handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter , °C TJ=25°C 16 60 12 E (mJ) 80 IC (A) 1 40 Eon 8 Eoff TJ=150°C 4 , 600V VGE =15V IC = 50A TJ = 150°C 8 6 80 IC (A) Eon E (mJ) 40 IC (A) VGE (V Microsemi
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APT60GL120JU2
Abstract: 2.5 6.5 1.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.3 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td , = 1.504 T7 Cth1 = 0.123 Cth2 = 0.944 J/K; Rth1 = 0.223 K/W J/K; Rth2 = 0.077 K/W J/K; Rth1 = , 2.3 1.7 2.8 120 2.3 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.55 K/W VCE(sat) VGE(th) ICES IXYS
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Abstract: 0V VCE = 25V f = 1MHz ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A mJ , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , 20 100 VCE = 600V VGE = 15V RG = 8.2 TJ = 150°C TJ=25°C 16 60 12 E (mJ) 80 , 80 IC (A) Eon E (mJ) 40 IC (A) VGE (V) Eoff 60 40 4 VGE=15V TJ Microsemi
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APT60GL120JU3
Abstract: mJ mJ 140 A Chopper diode ratings and characteristics VRRM IRM Test Conditions Min , handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter , VCE (V) 3 4 0 VCE = 600V VGE = 15V RG =12 TJ = 150°C 10 50 E (mJ) 8 40 , TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V) 12 TJ Microsemi
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APT40GL120JU2
Abstract: 5.5 2.5 4.5 mJ 200 A mJ Chopper diode ratings and characteristics IF VF , capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate , RG = 8.2 TJ = 150°C TJ=25°C 12 E (mJ) IC (A) 16 60 40 3 4 Eon 8 Eoff , E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 20 1 Eoff 60 40 Microsemi
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Abstract: mJ 200 A mJ Chopper diode ratings and characteristics IRM IF VF Maximum Reverse , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , °C TJ=25°C 12 E (mJ) IC (A) 16 60 40 3 4 Eon 8 Eoff TJ=150°C 4 0 0 , 10 VCE = 600V VGE =15V IC = 50A TJ = 150°C 8 6 80 IC (A) Eon E (mJ) 2 VCE (V Microsemi
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Abstract: ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 A Chopper diode ratings and , ) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-5 , Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 Eon Eoff 2 10 0 0 5 6 7 , VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V Microsemi
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Abstract: 1MHz ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A mJ Chopper diode , ) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-5 , Characteristics 100 VCE = 600V VGE = 15V RG = 8.2 TJ = 150°C TJ=25°C 12 E (mJ) IC (A) 16 , 150°C 8 6 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 Microsemi
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Abstract: ÂuC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 A Chopper , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , =12 TJ = 150°C 10 50 E (mJ) 8 40 30 4 Eon Eoff TJ=150°C 2 10 0 , 10 80 70 VCE = 600V VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ Microsemi
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Abstract: 1MHz ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A mJ Chopper diode , ) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-5 , VCE = 600V VGE = 15V RG = 8.2 TJ = 150°C TJ=25°C 12 E (mJ) IC (A) 16 60 40 3 , 6 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 Microsemi
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Abstract: 170 280 3.5 7 1.4 2.7 ns ÂuC mJ Thermal and package characteristics Symbol RthJC RthJA , ) 38.2 (1.504) www.microsemi.com 2-3 APT35DL120HJ â'" Rev 0 31.5 (1.240) 31.7 (1.248 , 70 5 60 VCE = 600V VGE = -15V C TJ = 125° 4 Err (mJ) IF (A) 50 TJ=125° C Microsemi
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Abstract: 290 45 520 90 10 12 pF ns ns mJ June, 2006 Td(off) Tf Td(on) Tr Td(off) Tf , = 3.9 TJ = 125°C 10 Eoff TJ=25°C 20 150 TJ=125°C E (mJ) IC (A) 3 , IC = 100A T J = 125°C 15 Eon 200 160 Eoff IC (A) 20 E (mJ) V GE=13V 120 , equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a Microsemi
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APT100GT120JU3
Abstract: ns mJ June, 2006 Symbol Characteristic ICES Zero Gate Voltage Collector Current , 15V RG = 3.9 TJ = 125°C 10 Eoff TJ=25°C 20 150 TJ=125°C E (mJ) IC (A) 3 , 100 125 150 175 200 Reverse Safe Operating Area 25 20 75 IC (A) VGE (V) E (mJ) V , capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP Microsemi
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