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Part Manufacturer Description PDF & SAMPLES
1504822 Phoenix Contact Circular Connector, 3 Contact(s), Female, Socket, ROHS COMPLIANT
1504848 Phoenix Contact Circular Connector
15043 Keystone Electronics Corp Turret Term Board
15046 Keystone Electronics Corp Turret Term Board
1504084 Phoenix Contact 1504084
15045 Keystone Electronics Corp Turret Term Board

mj 1504

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: mj1504 MJ 1504 RBS0 A LIMIT IS ZOO VOLTS LESS 1 1 1 1 1 "0 200 400 600 900 1000 1200 , mj, m.ii 950 iso 4j i3 10 100 vce, collector emitter voltage (voltsi FIGURE 13 - RBSOA, REVERSE -
OCR Scan
MJ8504 MJ8505 pnp mj 1504 mj 1504 transistor pnp 222A transistor mj 1504 transistors mj 1504 MJB504
Abstract: 1.8® 4/.4 1.5'04/,4 1040 150 5® 20 3.0 1.5'04/.4 1®60 150 5® 24 3.0 2N5879 , 1060 300 15® 20 MJ14003 MJ 14002 80 70 15-100® 50/3 2.5® 50/5 3»® 50/5 1®80 300 15®20 -
OCR Scan
2N4901 2N5067 2N4902 2N5068 2N4903 2N5069 2N5862 transistor b 1560 MJ 5030 2N5869 2N5867 2N5680 B48352 I515T0R TC-25
Abstract: 25 11 150 30 1.0 2.9 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz , reserved IGBT (typ.) Cth1 = 0.232 J/K; Rth1 = 0.223 K/W Cth2 = 1.504 J/K; Rth2 = 0.077 K/W Free IXYS
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E72873 RBSOA
Abstract: ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC , reserved IGBT (typ.) Cth1 = 0.232 J/K; Rth1 = 0.223 K/W Cth2 = 1.504 J/K; Rth2 = 0.077 K/W Free IXYS
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Abstract: 11W TC = 125°C 200 EAS Single Pulse Avalanche Energy 2 85 mJ PD Total Power , Ets Total Switching Losses td(on) tr td(off) tf Turn-on Delay Time Rise Time mJ , = +25°C 10.5 gfe Forward Transconductance VCE = 20V, I C = I C2 mJ 6 S , handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Emitter Advanced Power Technology
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IGBT 100A ic lm 335 tl 72 oz APT100GF60JR MIL-STD-750
Abstract: 80C75 100-06A8 0944j 100 A VGE = ±15 V; RG = 2.2 25 11 150 30 1.0 2.9 ns ns ns ns mJ mJ Cies QGon , RthJC (per diode) IGBT (typ.) T1-T6 Cth1 = 0.232 Cth2 = 1.504 T7 Cth1 = 0.123 Cth2 = 0.944 , 300 30 2.3 1.7 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MH z VCE= 300 V; VGE = 15 IXYS
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B25/50
Abstract: f = 1MHz uC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , VCE (V) 3 4 0 Transfert Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 , (A) 8 E (mJ) 3 6 4 20 2 VCE (V) VCE = 600V VGE = 15V RG =12 TJ = 150°C 10 Microsemi
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APT0502 APT40GL120JU3
Abstract: 5.5 2.5 4.5 mJ 200 A mJ Chopper diode ratings and characteristics IRM IF VF , handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter , °C TJ=25°C 16 60 12 E (mJ) 80 IC (A) 1 40 Eon 8 Eoff TJ=150°C 4 , 600V VGE =15V IC = 50A TJ = 150°C 8 6 80 IC (A) Eon E (mJ) 40 IC (A) VGE (V Microsemi
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APT60GL120JU2
Abstract: 2.5 6.5 1.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.3 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td , = 1.504 T7 Cth1 = 0.123 Cth2 = 0.944 J/K; Rth1 = 0.223 K/W J/K; Rth2 = 0.077 K/W J/K; Rth1 = , 2.3 1.7 2.8 120 2.3 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.55 K/W VCE(sat) VGE(th) ICES IXYS
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Abstract: 0V VCE = 25V f = 1MHz ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A mJ , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , 20 100 VCE = 600V VGE = 15V RG = 8.2 TJ = 150°C TJ=25°C 16 60 12 E (mJ) 80 , 80 IC (A) Eon E (mJ) 40 IC (A) VGE (V) Eoff 60 40 4 VGE=15V TJ Microsemi
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APT60GL120JU3
Abstract: mJ mJ 140 A Chopper diode ratings and characteristics VRRM IRM Test Conditions Min , handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter , VCE (V) 3 4 0 VCE = 600V VGE = 15V RG =12 TJ = 150°C 10 50 E (mJ) 8 40 , TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V) 12 TJ Microsemi
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APT40GL120JU2
Abstract: 5.5 2.5 4.5 mJ 200 A mJ Chopper diode ratings and characteristics IF VF , capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate , RG = 8.2 TJ = 150°C TJ=25°C 12 E (mJ) IC (A) 16 60 40 3 4 Eon 8 Eoff , E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 20 1 Eoff 60 40 Microsemi
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Abstract: mJ 200 A mJ Chopper diode ratings and characteristics IRM IF VF Maximum Reverse , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , °C TJ=25°C 12 E (mJ) IC (A) 16 60 40 3 4 Eon 8 Eoff TJ=150°C 4 0 0 , 10 VCE = 600V VGE =15V IC = 50A TJ = 150°C 8 6 80 IC (A) Eon E (mJ) 2 VCE (V Microsemi
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Abstract: ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 A Chopper diode ratings and , ) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-5 , Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 Eon Eoff 2 10 0 0 5 6 7 , VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V Microsemi
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Abstract: 1MHz ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A mJ Chopper diode , ) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-5 , Characteristics 100 VCE = 600V VGE = 15V RG = 8.2 TJ = 150°C TJ=25°C 12 E (mJ) IC (A) 16 , 150°C 8 6 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 Microsemi
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Abstract: ÂuC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 A Chopper , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , =12 TJ = 150°C 10 50 E (mJ) 8 40 30 4 Eon Eoff TJ=150°C 2 10 0 , 10 80 70 VCE = 600V VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ Microsemi
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Abstract: 1MHz ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A mJ Chopper diode , ) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-5 , VCE = 600V VGE = 15V RG = 8.2 TJ = 150°C TJ=25°C 12 E (mJ) IC (A) 16 60 40 3 , 6 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 Microsemi
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Abstract: 170 280 3.5 7 1.4 2.7 ns ÂuC mJ Thermal and package characteristics Symbol RthJC RthJA , ) 38.2 (1.504) www.microsemi.com 2-3 APT35DL120HJ â'" Rev 0 31.5 (1.240) 31.7 (1.248 , 70 5 60 VCE = 600V VGE = -15V C TJ = 125° 4 Err (mJ) IF (A) 50 TJ=125° C Microsemi
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Abstract: ns mJ June, 2006 Symbol Characteristic ICES Zero Gate Voltage Collector Current , 15V RG = 3.9 TJ = 125°C 10 Eoff TJ=25°C 20 150 TJ=125°C E (mJ) IC (A) 3 , 100 125 150 175 200 Reverse Safe Operating Area 25 20 75 IC (A) VGE (V) E (mJ) V , capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP Microsemi
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APT100GT120JU3
Abstract: V pF ns ns mJ June, 2006 Symbol Characteristic ICES Zero Gate Voltage Collector , 15V RG = 18 TJ = 125°C TJ=25°C 16 75 TJ=125°C E (mJ) IC (A) 2 VCE (V) Energy , V GE =15V IC = 50A TJ = 125°C 8 100 80 Eoff IC (A) 10 E (mJ) VGE =13V 6 , equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a Microsemi
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APT50GT120JU2 microsemi 1-E 380 30A, 600v DIODE
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