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UC1612J Texas Instruments SILICON, RECTIFIER DIODE, CERDIP-8
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70°
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70°
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70°
ICM7218DIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP
ISL58315CRTZ-T7A Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70°

k45 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Splitter protection, rated has four thyristor, diode and transistor structures to provide independent , Current ratings for ITU-T K.20/K.21/K.45, FCC Part 68, UL1950 / UL60950 and GR1089 Applications include , comprehensively specified for a full range of international requirements including ITU-T K.20, K.21, K.45 and FCC , Surge Current ratings for ITU-T K.20/K.21/K.45, FCC Part 68, modem protector would have a 275V , . Both the diode and crowbar sections are rated for 100A 10/1000, and 200A 9/720. Nine international Bourns
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GR-1089-CORE TISP3070H3SL P2202AB TISP4360H3BJ transistor K45 P2703Ax TISP6NTP2A AC OVER VOLTAGE PROTECTOR diode k45 TISP3115H3SL P2202AC TISP3125H3SL
Abstract: SOT-323 Plastic-Encapsulate DIODE SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES 3.COLLECTOR BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Power dissipation PD , BAS40W SERIES Unit : mm BAS40W-05 Marking:45.K45 unless otherwise specified Symbol , voltage VF IF=1mA IF=40mA 380 1000 mV Diode capacitance CD VR=0V 5 pF , -323 Plastic-Encapsulate Diode SOT-323 Plastic-Encapsulate Diodes SOT-323 PACKAGE OUTLINE DIMENSIONS D e1 -
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BAS40W-06 marking e1 diode DIODE marking A2 transistor k43 marking K45 sot323 A1 marking diode diode k44 525REF 026TYP 650TYP 021REF
Abstract: BAS40W SERIES SOT-323 SCHOTTKY DIODE FEATURES 1. 01 R EF 1. 25¡ À0. 05 Power dissipation mW (Tamb=25) 1. 30¡ À0. 03 Collector current 200 mA IF: Collector-base voltage 40 V VR: Operating and storage junction temperature range 2. 00¡ À0. 05 2. 30¡ À0. 05 0. 30 200 PD , CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46 unless , Diode capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr 5 nS Transys Electronics
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transistor k44 Marking k45 k44 transistor marking 44 MARKING 43 transistor k46
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C (2×2×0.5) unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package APPLICATION For General Purpose Switching Applications , -05 Marking:K45 Maximum Ratings @TA=25 Parameter Symbol Limits Unit 40 V Peak Repetitive Jiangsu Changjiang Electronics Technology
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAS40W SERIES SOT-323 SCHOTTKY DIODE 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1. 01 R EF 1. 25¡ À0. 05 Power dissipation mW (Tamb=25) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current , : 45.K45 BAS40W-06 Marking: 46.K46 unless otherwise specified) Test conditions MIN MAX , voltage VF IF=1mA IF=40mA 380 1000 mV Diode capacitance CD VR=0V, f=1MHz 5 pF Jiangsu Changjiang Electronics Technology
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marking k43 diode diode marking 45 diode MARKING A0 Diode Marking ef marking a0
Abstract: BAS40W-04/05/06 SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES 3.COLLECTOR BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Power dissipation PD : 200 mWTamb=25 Collector current IF: 200 mA Collector-base voltage VR : 40V Operating and storage , BAS40W SERIES Unit : mm BAS40W-05 Marking:45.K45 unless otherwise specified Symbol , voltage VF IF=1mA IF=40mA 380 1000 mV Diode capacitance CD VR=0V 5 pF WEJ Electronic
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K46 Package k46 transistor
Abstract: International K.21 Customer Premises International K.45 Trunk Networks International TIA , 2 Test 2* 4000 100 10x700 ms 5 ITU-T K.2/K.21/K.45 Basic Level Test 1 Test 2 , Test 1 230 2.9 - 23 900 Telecordia GR-1089-CORE ITU-T K.2/K.21/K.45 *Primary , -1089-CORE ITU-T K.2/K.21/K.45 http://onsemi.com 4 AND8022/D +I IT I(BO) IH - VOLTAGE +VOLTAGE , and the voltage limitation is dependent of the Zener voltage of each Zener diode. In these devices ON Semiconductor
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fuse thyristor NP3100SA metal oxide varistor SURGE ARRESTER np310 mdf 24 gdt testing
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C (2×2×0.5) unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package APPLICATION For General Purpose Switching Applications , -05 Marking:K45 Maximum Ratings @TA=25â"ƒ Parameter Symbol Limits Unit 40 V Peak Jiangsu Changjiang Electronics Technology
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Abstract: /1000 Base-T. ITU-T K.20, K.21, K.45 Basic Telcordia GR-1089-CORE Issue 6 Port Type 4 Alternate , (MOVs): MOV-10D820K â'¢ Ethernet - Power Contact and 1 TVS Diode: SMLJ58A Surge Protection , Protector and TVS Diode combination provide robust surge protection without impairing the Ethernet signal Bourns
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PT61020EL TCS-DL004-250-WH CDSOD323-T05C TCS-DL004 MOV10D820K
Abstract: BAS40/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features · · · Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 A Dim A B C D E G H J K J L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 TOP VIEW B C Mechanical Data · · · · · Case: SOT-23, Molded Plastic , -04 Marking: 44, K44 @ TA = 25°C unless otherwise specified BAS40-05 Marking: 45, K45 BAS40-06 Marking Diodes
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top marking K46 MIL-STD-202 BAS40 BAS40-04 DS11006
Abstract: Diodes SMD Type Surface Mount Schottky Barrier Diode KAS40,-04,-05,-06 (BAS40,-04,-05,-06) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Fast Switching 1 0.55 Low Forward Voltage Drop +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 PN Junction Guard Ring for Transient and +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 KAS40 KAS40-05 KAS40-06 1 , -04 KAS40-05 KAS40-06 Marking K43 K44 K45 K46 www.kexin.com.cn 1 Kexin Kexin
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KAS40-04 k44 smd transistor smd k45 SMD transistor k43
Abstract: Overshoot Voltage Specified Element Diode SCR IPP = 100 A, 2/ 10 V 8 12 Package Options - Surface Mount , Bellcore) GR-1089-CORE and ITU-T recommendations K.20, K.21 and K.45. The SLIC line driver section is , SLIC is minimized. Positive overvoltages are clipped to ground by diode forward conduction. Negative , recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the coordination requirements. For , 1999, Section 4) 5/320 us (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 us) 1.2 Bourns
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TISP61089D TISP61089SD TISP61089AD TISP61089ASD TISP61089 P61089
Abstract: Specified Element IPP = 100 A, 2/ 10 V Diode 8 SCR 12 Rated for GR-1089-CORE and K , compliance with Telcordia (formally Bellcore) GR-1089-CORE and ITU-T recommendations K.20, K.21 and K.45 , by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative , current rating is exceeded. For equipment compliant to ITU-T recommendations K.20 or K.21 or K.45 only , , February 1999, Section 4) 5/320 us (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 us Bourns
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TISP61089P TISP61089AP 61089a surge protector scr power electronic element TISP61089SDR TISP61089DR MS001 01/03/PI0286
Abstract: /310 10/1000 A 120 40 30 2/10 Overshoot Voltage Specified Element Diode SCR IPP = 100 A, 2/ 10 V 8 , Telcordia (formally Bellcore) GR-1089-CORE and ITU-T recommendations K.20, K.21 and K.45. The SLIC line , overvoltage stress on the SLIC is minimized. Positive overvoltages are clipped to ground by diode forward , compliant to ITU-T recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the , (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) 5/320 us (ITU-T K.20, K.21& K.45, K Bourns
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Abstract: NEC ELECTRONICS INC 30E- D k45?525 aos^aoa 4 â  r-W-73 PHOTO INTERRUPTER PS5002LC PHOTO IC INTERRUPTER PACKAGE DIMENSIONS (Unit : mm) 3.0=0.2 ¿3.2 Ml d! V .â'"Iâ'". I I J. -a ' 1 12.0 = 0.2 S 9.5 = 0.2 18.25 = 0.3 â¡ 0.46 â¡ 7.6 "¡Si-r Sii â'ž o il "J o o: 2-T27? L r r 1 voi , Light Emitting Diode coupled to a Si monolithic integrated circuit including a Photo Diode in a plastic , 002=100=1 L> â  T-41-73 PS5002LC ABSOLUTE MAXIMUM RATINGS (T, => 25 °C) Diode Reverse Voltage Vr 6 V -
OCR Scan
K4552
Abstract: Diodes SMD Type Surface Mount Schottky Barrier Diode KAS40W,-04W,-05W,-06W (BAS40W,-04W,-05W,-06W) Features Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection KAS40-06W KAS40W KAS40-05W KAS40-04W Absolute Maximum Ratings Ta = 25 Parameter Symbol Peak Repetitive Reverse Voltage 40 VRWM , . KAS40W KAS40-04W KAS40-05W KAS40-06W Marking K43 K44 K45 K46 www.kexin.com.cn Kexin
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Abstract: /310 10/1000 A 120 40 30 2/10 Overshoot Voltage Specified Element Diode SCR IPP = 100 A, 2/ 10 V 8 , ITU-T recommendations K.20, K.21 and K.45. The SLIC line driver section is typically powered from 0 V , overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped , .20 or K.21 or K.45 only, the series resistor value is set by the coordination requirements. For , 1999, Section 4) 5/320 us (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 us) 1.2 Bourns
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1089AS 61089S
Abstract: cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across each , by forward conduction of the TISP6NTP2C antiparallel diode. Negative overvoltages are initially , 1999, Section 4) 5/320 (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700) 2/10 , .20, K.21 and K.45 coordination with a 400 V primary protector Min 100 5 10 Typ 220 50 50 Max Unit nF , conditions with 20 MHz bandwidth. The diode forward recovery and the thyristor gate impulse breakover Bourns
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antiparallel scr DUAL COMMON ANODE-CATHODE TISP6NTP2C
Abstract: compliance with Telcordia GR-1089-CORE, Issue 3 and ITU-T recommendations K.20, K.21 and K.45. The SLIC line , overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped , compliant to ITU-T recommendations K.20, K.21 or K.45 only, the series resistor value is set by the , .20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 us) 10/360 us (Telcordia GR Bourns
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TISP61089HDM B1250T GR-1089 SD-TISP6-001- 10/04/TSP0409
Abstract: MCC Features · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAS40WT Pow Dissipation PD=200mW Tamb=25 Collector Current IF=200mA Collector-base Voltage VR=40V Maximum Ratings · · Operating Temperature: -55 to +150 Storage Temperature: -55 to +150 200mW 40Volt Plastic-Encapsulate Diode SOT-323 A D Electrical Characteristics @ 25°C Unless Otherwise Specified Reverse , -05 Marking:45.K45 BAS40WT-06 Marking:46.K46 www.mccsemi.com Revision: 1 2003/12/17 Micro Micro Commercial Components
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bas40wt-05 MARKING .01 SOT BAS40WT-04 BAS40WT-05
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