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Part Manufacturer Description PDF & SAMPLES
CS5361-KSZ Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, PDSO24, 300 MIL WIDTH, LEAD FREE, SOIC-24
CS5381-KSZR Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, CMOS, PDSO24, 300 MIL, LEAD FREE, SOIC-24
CS5351-KSZ Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, PDSO24, 300 MIL, LEAD FREE, SOIC-24
CS5381-KSZ Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, CMOS, PDSO24, 300 MIL, LEAD FREE, SOIC-24
CS61884-IB Cirrus Logic PCM Transceiver, 1-Func, CEPT PCM-30/E-1, CMOS, PBGA160, FBGA-160
CS61884-IQZ Cirrus Logic PCM Transceiver, 1-Func, CEPT PCM-30/E-1, PBGA160, 15 X 15 MM, LEAD FREE, LFBGA-160

igbt BSM 300 GA 160

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BSM 200 GA 120 DL IGBT Power Module Preliminary data · Low Loss IGBT · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate Type VCE BSM 200 GA , 40 / 125 / 56 Oct-30-1997 BSM 200 GA 120 DL Electrical Characteristics, at Tj = 25 °C , 2 Oct-30-1997 BSM 200 GA 120 DL Electrical Characteristics, at Tj = 25 °C, unless , Tj = 125 °C - 25 - 3 Oct-30-1997 BSM 200 GA 120 DL Power dissipation Ptot = Eupec
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Abstract: SIEMENS IGBTLeistungsmodule Typ Type ^C E IGBT Power Modules lc A fith J C V K/W w P to t ^CEsat(typ.) V Bestellnummer Ordering code Bild Figure Einzelschalter BSM 200 GA 100 D BSM 300 GA 100 D BSM 200 GA 120 D BSM 300 GA 120 D BSM 200 GA 160 D BSM 300 GA 160 D , BSM 50 GB 120 D BSM 75 GB 120 D BSM 100 GB 120 D BSM 150 GB 120 D BSM 50 GB 160 D BSM 75 GB 160 D BSM 100 GB 160 D BSM 150 GB 160 D 1000 1000 : 1000 1000 1000 2 2 2 X X X Half-bridges 25 50 75 0.40 -
OCR Scan
siemens igbt BSM 200 GA 120 siemens igbt BSM 150 gb 100 d siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100 gb siemens igbt BSM 25 gb 100 d C67076-A2001-A2 C67076-A2000-A2 C67076-A2006-A2 C67076-A2007-A2 C67076-A2014-A2 C67076-A2015-A2
Abstract: BSM 300 GA 170 DN2 IGBT Power Module · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate · RG on,min = 5.6 Ohm Type VCE BSM 300 GA 170 DN2 BSM 300 GA 170 DN2 S IC Package Ordering Code 1700V 440A SINGLE SWITCH 1 , -27-1997 BSM 300 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , Oct-27-1997 BSM 300 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise Eupec
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A2706 a2708 C67070-A2706-A67 C67070-A2708-A67
Abstract: BSM 300 GA 120 DN2 IGBT Power Module â'¢ Single switch â'¢ Including fast free-wheeling diodes â'¢ Package with insulated metal base plate Type VCE BSM 300 GA 120 DN2 BSM 300 GA 120 , / 56 Oct-27-1997 BSM 300 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless , MHz 2 Oct-27-1997 BSM 300 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless , /Âus Tj = 25 °C - 14 - Tj = 125 °C - 40 - 3 Oct-27-1997 BSM 300 GA 120 Eupec
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C67076-A2007-A70 C67070-A2017-A70 BSM300GA120DN2
Abstract: SIEMENS BSM 200 GA 120 DN2 IGBT Power Module â'¢ Single switch â'¢ Including fast , BSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70 BSM 200 GA 120 DN2 S , 5 5 /1 5 0 /5 R 62351.05 00Ã0245 ? 6 C â  â'™ 372 " SIEMENS BSM 200 GA 120 DN2 , , f= 1 MHz 373 00fi02Mb b l S 0 5 .9 6 SIEMENS BSM 200 GA 120 DN2 Electrical , Group A235fc.D5 DDflDSM? 551 â  374 0 5 .9 6 SIEMENS BSM 200 GA 120 DN2 Power -
OCR Scan
SIS00025 C67070-A2006-A70 DH505S1 00AD25
Abstract: BSM 200 GA 120 DN2 IGBT Power Module · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate Type VCE BSM 200 GA 120 DN2 BSM 200 GA 120 DN2 S , -28-1996 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , capacitance S 2 Mar-28-1996 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C , ) parameter: D = tp / T IGBT 10 0 320 K/W A IC ZthJC 240 200 10 -1 10 -2 160 Siemens
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Abstract: BSM 300 GA 120 DL IGBT Power Module Preliminary data · Low Loss IGBT · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate Type VCE BSM 300 GA , + 150 °C -40 . + 125 K/W sec 40 / 125 / 56 Oct-17-1997 BSM 300 GA 120 DL , capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-17-1997 BSM 300 GA 120 DL , -17-1997 BSM 300 GA 120 DL Power dissipation Ptot = (TC) parameter: Tj 150 °C Safe operating area IC Eupec
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Q67050-S1004-A70
Abstract: BSM 200 GA 170 DN2 IGBT Power Module Preliminary data · Single switch · Including fast , GA 170 DN2 BSM 200 GA 170 DN2 S IC Package Ordering Code 1700V 290A SINGLE SWITCH 1 , -31-1996 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , capacitance S 2 Jul-31-1996 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C , -31-1996 BSM 200 GA 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 °C Safe operating area IC Siemens
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290A C67070-A2705-A67 C67070-A2707-A67
Abstract: BSM 200 GA 120 DN2 IGBT Power Module â'¢ Single switch â'¢ Including fast free-wheeling diodes â'¢ Package with insulated metal base plate Type VCE BSM 200 GA 120 DN2 BSM 200 GA 120 , Oct-27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise , 2 Oct-27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless , /Âus Tj = 25 °C - 12 - Tj = 125 °C - 36 - 3 Oct-27-1997 BSM 200 GA 120 Eupec
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BSM200GA120DN2
Abstract: Package with insulated metal base plate · on.min = 6-8 Ohm BSM 200 GA 170 DN2 Type BSM 200 GA 170 DN2 BSM 200 GA 170 DN2 S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage f , saturation voltage ^GE(th) BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless , 1 Semiconductor Group 463 0 5 .9 6 SIEMENS BSM 200 GA 170 DN2 Electrical , Ptot = f ( Jc) parameter: 7j < 150 °C 1800 BSM 200 GA 170 DN2 Safe operating area t = ^(^ ce -
OCR Scan
igbt module bsm 200 siemens igbt BSM 200 GA 100 d siemens igbt BSM 300 ga 120 GA170DN2
Abstract: BSM 200 GA 120 DN2 IGBT Power Module · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate Type VCE BSM 200 GA 120 DN2 BSM 200 GA 120 DN2 S , -27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , Oct-27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise , Tj = 125 °C - 36 - 3 Oct-27-1997 BSM 200 GA 120 DN2 Power dissipation Ptot = Eupec
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C67076-A2006-A
Abstract: diodes 1Package with insulated metal base plate Type BSM 300 GA 120 DN2 BSM 300 GA 120 DN2 S Maximum , - Semiconductor Group 382 SIEMENS BSM 300 GA 120 DN2 Electrical Characteristics, at , 05.96 SIEMENS BSM 300 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise , /(Tc) parameter: 7j , Semiconductor Group 385 05.96 SIEMENS Typ. output characteristics BSM 300 GA 120 DN2 Typ -
OCR Scan
igbt BSM 300 GA 120 BSM300
Abstract: BSM 200 GA 170 DN2 IGBT Power Module · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate · RG on,min = 6.8 Ohm Type VCE BSM 200 GA 170 DN2 BSM 200 GA 170 DN2 S IC Package Ordering Code 1700V 290A SINGLE SWITCH 1 , -27-1997 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , 2 Oct-27-1997 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless Eupec
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Abstract: BSM 300 GA 170 DN2 euoec F IGBT Power Module · Single switch · Including fast , Package SINGLE SWITCH 1 SSW SENSE 1 Ordering Code C67070-A2706-A67 C67070-A2708-A67 Type BSM 300 GA 170 DN2 BSM 300 GA 170 DN2 S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage , 44 _ _ 3.5 _ _ 1 _ 2 Oct-27-1997 BSM 300 GA 170 DN2 euoec F Symbol , Ah JC = f(fi p) parameter: D = tp / T Tc 4 Oct-27-1997 BSM 300 GA 170 DN2 -
OCR Scan
vqe 21 d igbt module bsm 300 vqe 21 f
Abstract: Package with insulated metal base plate · ^G on.min = 5.6 Ohm Type BSM 300 GA 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Rg e = 20 k il BSM 300 GA 170 DN2 ^CE h , - Semiconductor Group 472 SIEMENS BSM 300 GA 170 DN2 Electrical Characteristics, at , Qss 44 QlSS 3.5 Qss 1 S nF Semiconductor Group 4 73 05 .96 SIEMENS BSM 300 GA , dissipation P,0, = /(^C) parameter: 7] £ 150 °C BSM 300 GA 170 DN2 Safe operating area t = A ^ ce -
OCR Scan
ga 170 ga 39 diode
Abstract: BSM 200 GA 170 DN2 IGBT Power Module · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate · RG on,min = 6.8 Ohm Type VCE BSM 200 GA 170 DN2 BSM 200 GA 170 DN2 S IC Package Ordering Code 1700V 290A SINGLE SWITCH 1 , -27-1997 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , 2 Oct-27-1997 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless Eupec
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Abstract: BSM 200 GA 120 DN2 IGBT Power Module · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate Type VCE BSM 200 GA 120 DN2 BSM 200 GA 120 DN2 S , 300 A 500 IC 7 0 0 10 20 30 40 60 RG Oct-27-1997 BSM 200 GA , -27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , Oct-27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise Eupec
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Abstract: BSM 200 GA 120 DN2 IGBT Power Module · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate Type VCE BSM 200 GA 120 DN2 BSM 200 GA 120 DN2 S , -27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , Oct-27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise , Tj = 125 °C - 36 - 3 Oct-27-1997 BSM 200 GA 120 DN2 Power dissipation Ptot = Eupec
Original
Abstract: BSM 300 GA 170 DN2 IGBT Power Module · Single switch · Including fast free-wheeling diodes · Package with insulated metal base plate · RG on,min = 5.6 Ohm Type VCE BSM 300 GA 170 DN2 BSM 300 GA 170 DN2 S IC Package Ordering Code 1700V 440A SINGLE SWITCH 1 , -27-1997 BSM 300 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter , Oct-27-1997 BSM 300 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise Eupec
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Abstract: BSM 300 GA 170 DN2 IGBT Power Module Preliminary data · Single switch · Including fast , GA 170 DN2 BSM 300 GA 170 DN2 S IC Package Ordering Code 1700V 440A SINGLE SWITCH 1 , capacitance S 2 Mar-12-1997 BSM 300 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C , -12-1997 BSM 300 GA 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 °C Safe operating area IC , -2 10 -1 s 10 0 tp 4 Mar-12-1997 BSM 300 GA 170 DN2 Typ. output Siemens
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121-997
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