Datasheet Archive Saved by the Datasheet Archive: 07/08/2000


RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS 7265 - Datasheet Archive
Datasheet
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
AM1214-250
Document Format Size Document Number Date Update Pages
PDF Portable Document Format 7265 04/08/2000 4
Raw TextRaw Text Format


1/4

TARGET DATA

July 2000

AM1214-250

RF POWER TRANSISTORS

L-BAND RADAR APPLICATIONS

w REFRACTORY /GOLD METALLIZATION

w EMITTER SITE BALLASTING

w LOW RF THERMAL RESISTANCE

w INPUT/OUTPUT MATCHING

w OVERLAY GEOMETRY

w METAL/CERAMIC HERMETIC PACKAGE

w P

OUT

= 300 W MIN. WITH 8.0 dB GAIN

w 1215-1400 MHz OPERATION

DESCRIPTION

The AM1214-250 is a rugged, Class C common

base device designed for new L - Band medium &

long pulse radar applications.

Minimal amplitude droop over a long pulse of 500

microsec. is guaranteed by a thermal design incor-

porating an overlay site-ballasted die geometry.

PIN CONNECTION

1

3

4 2

1. Collector

2. Base

3. Emitter

4. Base

M259

hermetically sealed

ORDER CODE

AM1214-250

BRANDING

XAM1214-250

ABSOLUTE MAXIMUM RATINGS (T

CASE

= 25 5 C)

Symbol Parameter Value Unit

P

DISS

Power Dissipation (T

C

3  85 5 C)*

786 W

I

C

Device Current* 21 A

V

CBO

Collector-Base Voltage 70 V

T

j

Operating Junction Temperature +250 5 C

T

STG

Storage Temperature -65 to +200 5 C

THERMAL DATA

R

th(j-c)

Junction -Case Thermal Resistance* 0.21 5 C/W

* Applies only to rated RF amplifier operation: 150 microsec / 10%

AM1214-250

2/4

ELECTRICAL SPECIFICATION (T

CASE

= 25 5 C)

STATIC

DYNAMIC @ 150 MICROSEC / 10 %

DYNAMIC @ 500 MICROSEC / 10 %

Symbol Test Conditions  Min. Typ. Max. Unit

BV

CBO

I

C

= 50 mA I

E

= 0 mA

70 V

BV

CES

I

C

= 50 mA V

BE

= 0 V

70 V

BV

EBO

I

E

= 20 mA I

C

= 0 mA

3.5 V

I

CES

V

CE

= 40 V V

BE

= 0 V

10 mA

h

FE

V

CE

= 5 V I

C

= 0.5 A

10

Symbol Test Conditions Min. Typ. Max. Unit

P

OUT

f = 1215 - 1400 MHz P

IN

= 40 W V

CC

= 50 V

300 350 W

h

C

f = 1215 - 1400 MHz P

IN

= 40 W V

CC

= 50 V

40 45 %

G

P

f = 1215 - 1400 MHz P

IN

= 40 W V

CC

= 50 V

8.75 9.4 dB

Symbol Test Conditions Min. Typ. Max. Unit

P

OUT

f = 1215 - 1400 MHz P

IN

= 40 W V

CC

= 42 V

225 250 W

h

C

f = 1215 - 1400 MHz P

IN

= 40 W V

CC

= 42 V

40 45 %

G

P

f = 1215 - 1400 MHz P

IN

= 40 W V

CC

= 42 V

7.5 8.0 dB

3/4

AM1214-250

M259, Package Outline

Ref. 1019147D

M259 (.400 x .500 SUPER WIDE 2/L HERM. W/FLG) MECHANICAL DATA

mm Inch

MIN. TYP. MAX MIN. TYP. MAX

A 7.49 7.75 .295 .305

B 19.56 21.08 .770 .830

C 9.65 9.91 .380 .390

D 3.18 3.43 .125 .135

E 4.90 .193

F 10.03 10.34 .395 .407

G 12.45 12.95 .490 .510

H 16.38 16.64 .645 .655

I 3.18 .125

J 22.61 23.11 .890 .910

K 0.05 0.15 .002 .006

L 1.40 1.65 .055 .065

M 2.79 3.30 .110 .130

N 5.84 .230

DIM.

AM1214-250

4/4

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

)  2000 STMicroelectronics - All Rights Reserved

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - 

Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com


Top

© 2017 Datasheet Archive