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SD8250

AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

Document Number:          2874
Date Update:              8/4/94
Pages:                    5
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July 19, 1994
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
. 5:1 VSWR CAPABILITY @ 1.75 dB RF
OVERDRIVE
. LOW THERMAL RESISTANCE
. INPUT/OUTPUT MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
. P
OUT
=
250 W MIN. WITH 8.0 dB GAIN
DESCRIPTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed out-
put and driver applications.
This device is designed for operation under mod-
erate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high re-
liability and product consistency.
The SD8250 is supplied in the AMPAC] Hermetic
Metal/Ceramic package with internal Input/Output
matching structures.
PIN CONNECTION
BRANDING
STAN250A
ORDER CODE
SD8250
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
5
C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation* (T
C
3 905C) 575 W
I
C
Device Current* 20 A
V
CC
Collector-Supply Voltage* 55 V
T
J
Junction Temperature (Pulsed RF Operation) 250
5
C
T
STG
Storage Temperature - 65 to +200
5
C
R
TH(j-c)
Junction-Case Thermal Resistance
(1)
0.28 5 C/W
*Applies only to rated RF amplifier operation
(1) Infra-Red Scan of Hot Spot Junction Temperature at Rated RF Operating Conditions
SD8250
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
1/5
ELECTRICAL SPECIFICATIONS (T
case
= 25
5
C)
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
P
OUT
f = 960 - 1215 MHz P
IN
= 40 W V
CC
= 50 V 250 295 - W
h
c f = 960 - 1215 MHz P
IN
= 40 W V
CC
= 50 V 38 44 - %
P
G
f = 960 - 1215 MHz P
IN
= 40 W V
CC
= 50 V 8.0 8.7 - dB
Note: Pulse Width = 20 m Sec
Duty Cycle = 5%
T
C
= 255C
STATIC
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
BV
CBO
I
C
= 35mA I
E
= 0mA 65 - - V
BV
EBO
I
E
= 15mA I
C
= 0mA 4.0 - - V
BV
CES
I
C
= 25mA I
B
= 0mA 60 - - V
I
CES
V
BE
= 0V V
CE
= 50V - - 20 mA
h
FE
V
CE
= 5V I
C
= 1A 10 - - -
DYNAMIC
TYPICAL PERFORMANCE
50
100
150
200
250
300
350
400
30
40
50
60
70
80
90
100
960 1090
TYPICAL BROADBAND
POWER AMPLIFIER
P
O
W
E
R
O
U
T
P
U
T
W
A
T
T
S
FREQUENCY (MHz)
C
O
L
L
E
C
T
O
R
E
F
F
.
%
FREQUENCY (MHz)
1215
TYPICAL BROADBAND POWER
AMPLIFIER
P
IN
=
40W
P
IN
=
32W
P
IN
=
25W
P
OUT
P
IN
=
40W
P
IN
=
32W
P
IN
=
25W
h
C
1.1
3.1
5.1
960 1090
I
N
P
U
T
V
S
W
R
FREQUENCY (MHz) FREQUENCY (MHz)
1215
INPUT VSWR vs FREQUENCY
.
.
I
N
P
U
T
V
S
W
R
SD8250
2/5
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
P
IN
= 40 W
V
CC
= 50 V
Normalized to 50 ohms
Z
IN
H
L
H
L
Z
CL
M
M
IMPEDANCE DATA
Z
IN
Z
CL
FREQ. Z
IN
(
W
) Z
CL
(
W
)
L = 960 MHz 1.0 + j 3.5 1.9 - j 1.8
M
=
1090 MHz 4.0 + j 3.5 1.6 - j 0.9
H
=
1215 MHz 2.2 + j 2.2 1.4 - j 1.1
0
10
20
30
40
50
60
70
80
90
100
30
40
50
60
70
80
30 35 40 45 50
TYPICAL RELATIVE OUTPUT & COLLEC-
TOR EFFICIENCY vs COLLECTOR VOLTAGE
P
O
W
E
R
O
U
T
P
U
T
W
A
T
T
S
COLLECTOR VOLTAGE (VOLTS)
C
O
L
L
E
C
T
O
R
E
F
F
.
%
COLLECTOR VOLTAGE (VOLTS)
TYPICAL POWER OUTPUT & COLLECTOR
EFFICIENCY vs COLLECTOR VOLTAGE
P
OUT
h
C
TYPICAL PERFORMANCE (cont'd)
SD8250
3/5
All dimensions are in inches.
Substrate material: .025 thick AI
2
O
3
C1 : 100 m F Electrolytic Capacitor, 63V
C2 : .1 m F Ceramic Capacitor
C3 : Feedthru Bypass SCI 712-022
C4 : Johanson 7475 Gigatrim .6 - 4.5 pF
C5 : Johanson 7475 Gigatrim .6 - 4.5 pF
C6 : D.C. Block 100 pF
L1 : #26 Wire, 4 Turn .062 I.D.
L2 : #26 Wire, 4 Turn .062 I.D.
TEST CIRCUIT
SD8250
4/5
Ref.: Dwg. No. 12-0222 rev. A
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of ST Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
{1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SD8250
5/5

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