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Part Manufacturer Description PDF & SAMPLES
TIL188-4 Texas Instruments A-C Input Optocoupler/Optoisolator 6-PDIP
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN

equivalent transistor D 1884

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: (Sheet 1 of 12) Pad Center(1) PAD# SIGNAL(2,3,4) X Y X Y 001 D/C# -173.1 , -188.4 -3988 -4786 102 D51 -153.6 -188.4 -3902 -4786 -4786 103 D50 -150.2 -188.4 -3816 104 VCC_3.3 -146.8 -188.4 -3729 -4786 105 VSS -143.4 -188.4 -3643 -4786 106 D49 -140.0 -188.4 -3556 -4786 107 D48 -136.6 -188.4 -3470 -4786 108 DP5 -133.2 -188.4 -3384 -4786 109 D47 -129.8 Intel
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X8050266133 AP-479 VCC3 2456 23 tms 3615 equivalent transistor 1884 2118 intel 241732 ac 187 and 188 100-MH 120-MH 133-MH X8050266100
Abstract: ) D i TIP3055 N-P-N SILICON POWER TRANSISTOR ·-3 3 -/3 PARAM ETER M EASUREM ENT INFORMATION , TEXAS ÌNSTR r 8961726 TEXAS IN STR (OPTO) 62C 37004 D TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T , 1970 - REVISED OCTOBER 1884 absolute maximum ratings at 2 5 ° C case temperature (unless otherwise , temperature at the rate of 28m W /°C. This rating is based on the capability of the transistor to operate -
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TIP305S DA 2688 LT 5265 transistor DA 2688 transistor mj 3055 c2688 C-2688 T0-218AA 7S265
Abstract: TRANSISTOR DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 90 W at 25° C , |öTti7at D0B7DÃ7 1 &961726 TEXAS INSTR (OPTO) TIP3055 N-P-N SILICON POWER TRANSISTOR 62C 37007 D T- 33 , on the capability of the transistor to operate safely in the circuit of Figure 2. L * VbB2 = OV.Rg = , ÃNSTR (OPTO) 62C 37005 TIP3055 N-P-N SILICON POWER TRANSISTOR T-33-/3 electrical characteristics , slightly with transistor parameters. 5-264 Texas Instruments POST OFFICE BOX 225012 â'¢ DALLAS. TEXAS -
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equivalent transistor TIP3055 2N3055 transistor equivalent TIP3055 NPN power transistor equivalent transistor 2n3055 tip3055 equivalent 2N3055 equivalent transistor 2N3055 37D0C1
Abstract: FEATURES â  Infinite VSWR â  No Thermal Runaway â  Broadband Capability â  Class A, B, C, D, E â , 10V 'D(on)1 On-State Drain Current 1.2 1.8 A VDS = 30V, VQS = 10V vGS(th) Gate Threshold Voltage 2 , 150 .03 63 .83 -35 20 .89 -67 18.84 134 .05 50 .78 -65 30 .84 -91 15.85 124 .06 41 .72 -85 40 .79 , Output Power vs Input Power 35 30 E 25 < £ 20 D O 15 E S 10 2 5 0 â  DQ - 0.1A , ) 2.5 Series Equivalent Input Impedance vs Frequency 20 30 40 60 80 100 160 200 FREQUENCY (MHz -
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VMP4 siliconix vmp4 Transistor VMP4 juo 114 57-9130 VMP-4
Abstract: ) Lc=0 (nH) Transistor Chip Equivalent Circuit C3 B RBX Rsp C L1 G-P S' CSP , Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Equivalent Circuit BTC5094N3 SOT-23 BBase CCollector EEmitter Features · Low Noise and High , 1.884 1.820 Ang 135.16 125.50 116.98 109.83 103.45 97.83 92.86 87.94 83.94 79.76 75.61 CYStech Electronics
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c380 NPN transistor c380 transistor TT 2076 transistor transistor marking code ne SOT-23 transistor c380 ff 0401 transistor C212N3 UL94V-0
Abstract: =0.5 (nH) L3=0.6 (nH) Package Equivalent Circuit Transistor Chip Equivalent Circuit C3 C' B , Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , 0.262 142.43 138.68 135.64 132.44 129.17 127.23 2.181 2.076 1.997 1.961 1.884 1.820 , Transistor S Chip B C1 E L2 Collector C2 Le RSS RSX L3 Emitter BTC5094N3 CYStek CYStech Electronics
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TRANSISTOR c 5521 c 4977 transistor NPN C380 diode product 14408 transistor m 4995 70E-09
Abstract: =20.89 (fF) CSC=41.79 (fF) C1=70 (fF) Transistor Chip Equivalent Circuit Package Equivalent Circuit , . : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. SOT , 1.997 1.961 1.884 1.820 S12 Ang 135.16 125.50 116.98 109.83 103.45 97.83 92.86 87.94 , RSX Base LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le L3 Emitter Hi-Sincerity Microelectronics
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TR10E c380 npn transistor T C380 diode gp 934 20E-18 rbm 5018 HN200103
Abstract: ) L1=0.5 (nH) L2=0.5 (nH) L3=0.6 (nH) Transistor Chip Equivalent Circuit Package Equivalent , . : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. SOT , 2.413 2.345 2.192 2.181 2.076 1.997 1.961 1.884 1.820 Ang 135.16 125.50 116.98 109.83 , 0.1nH LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le RSS RSX L3 Emitter Hi-Sincerity Microelectronics
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4.7-16 FC 0137 4447 surface mounted diode
Abstract: . : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5096WC3 Description The BTC5096WC3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , 2.496 2.413 2.345 2.192 2.181 2.076 1.997 1.961 1.884 1.820 Ang 135.16 125.50 116.98 , =450.0 (Ohm) C1=70 (fF) C2=150 (fF) C3=80 (fF) Le=0.6 (nH) Lb=0.85 (nH) Lc=0 (nH) Transistor Chip Equivalent Circuit C3 B RBX Rsp C L1 G-P S' CSP Base RSC CSC E REX 0.1nH CYStech Electronics
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DATASHEET OF BJT 547 Transistor 0235 BF kf 202 transistor K 4014 transistor hfe 4538 4538 equivalent C212WC3
Abstract: . : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5095S3 Description The BTC5095S3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , 2.496 2.413 2.345 2.192 2.181 2.076 1.997 1.961 1.884 1.820 Ang 135.16 125.50 116.98 , =450.0 (Ohm) C1=70 (fF) C2=150 (fF) C3=80 (fF) Le=0.6 (nH) Lb=0.85 (nH) Lc=0 (nH) Transistor Chip Equivalent Circuit C3 B RBX Rsp C L1 G-P S' CSP Base RSC CSC E REX 0.1nH CYStech Electronics
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C212S3 TT 2076 4014 bp RE101 marking code c3 sot 23 1011 sot323 marking
Abstract: Management Easy to Use -B u ilt- In Self Test - Hardware Debugging Support IP fô g y iM D G M W , # Vss Vcc Vss Vcc PCD PWT D/C# M/IO# Vss Vss Vcc BE3# BE2# BE1 # BE0# BREQ Vss (Mils = 0.001 in.) X -218.6 -218.6 -218,6 -218.6 -218.6 -218.6 -210.9 -205.2 -199.6 -194.0 -188.4 -182.8 -177.2 -171.6 -166.0 , -160.4 -166.0 -171,6 -177.2 -182.8 -188.4 -194.0 -199.6 -205.2 -210.9 (Microns) X -40 73 -42 16 -43 58 , trical limits as the equivalent packaged unit. WAFER PROBE Wafer probing is performed on every wafer pro -
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INTEL 80486 DX2 architecture 242202 INTEL 2186 INTEL 80486 DX2 SmartDie te 555-3 386TM 486TM
Abstract: AMER PHILIPS/DISCRETE b?E D mmmm^mmmm*mm NPN 8 GHz wideband transistor BFQ67 FEATURES PINNING â , ¡025Ob7 2T7 MAPX Product specification N AP1ER PHILIPS/DISCRETE b7E D- NPN 8 GHz wideband transistor BFQ67 , Semiconductors Product specification N AMER PHILIPS/DISCRETE b?E D- NPN 8 GHz wideband transistor BFQ67 Ts , Semiconductors Product specification -N A (1ER PHILIPS/DISCRETE b7E D- NPN 8 GHz wideband transistor BFQ67 , Semiconductors â"¢ bb"13JI Product specification -N AMER PHILIPS/DISCRETE b7E D- NPN 8 GHz wideband transistor -
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TAG 453 665 800 tag 665 100 2857 730 transistor transistor BF 672 Tag c0 665 800 RF NPN POWER TRANSISTOR C 10-12 GHZ
Abstract: ,S3R31 002S073 STO M A P X N AMER PHILIPS/DISCRETE b?E D NPN 8 GHz wideband transistor Philips , wideband transistor Product specification b7E D -BFQ67 Table 2 Common emitter scattering , wideband transistor FEATURES Product specification b?E T > BFQ67 PINNING â'¢ High power , DESCRIPTION Silicon NPN transistor in a plastic SOT23 envelope. It is designed for wideband applications , wideband transistor BFQ67 Philips Semiconductors THERMAL RESISTANCE SYMBOL PARAMETER THERMAL -
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transistor bt 808 transistor 1548 b
Abstract: CD4030AE metrix OX special bags. John Fluke Part No. 453522 453530 Bag Size Ô O X C D 8" x 12" 1 6 " x 24" 1 2 " x 15" 7 , Check-Out P ro c e d u re . 1-2 SPECIFICA TIO N S , A C /D C .2-4 Current AC/ D C . 2-5 C o n d u ctan c , 2-6 Transistor T e s te r -
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Fluke 179 Multimeter circuit diagram FLUKE 77 series II service manual fluke 741 Repair manual SERVICE MANUAL OF FLUKE 175 Fluke 19 Multimeter circuit diagram FLUKE 77 series II manual 802OA 8020A
Abstract: 33166T . 2-3 2-27. Voltage A C /D C . 2-4 2-30. Current A C /D C , 2-6 2-41. Transistor T ester , FUNCTIONAL D ESC R IPTIO N .3-1 3-8. BLOCK DIAGRAM A N A LY SIS. 3-2 3-9. A /D C onverter -
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schematic fluke 79 FLUKE 79 manual 171100-2 SUBSTITUTE OF TRANSISTOR 1443 transistor 33166 t schematic diagrams fluke
Abstract: additional information. Chip Information TRANSISTOR COUNT: 1884 PROCESSS: SiGe/Bipolar Typical , using a PRBS 2 - 1 or equivalent pattern. Specifications at -40°C are guaranteed by design and , control an external transistor for optional shutdown circuitry. Ground Open-Collector Transmit Fault , the equivalent series resistance (ESR) of the laser diode should equal 15. To further damp , Applications Circuit. This shutdown transistor prevents a single-point fault at the laser from creating an Maxim Integrated Products
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MAX3738 HFAN-02 MAX3738ETG sfp laser driver SFF-8472
Abstract: GHz wideband transistor November 1992 Product specification b7E D - BFR520 , Semiconductors N AMER PHILIPS/D ISCRETE NPN 9 GHz wideband transistor November 1992 b7E D Product , specification b?E D- NPN 9 GHz wideband transistor BFR520 Table 1 Common emitter , APIER PHILIPS/ DIS CRETE NPN 9 GHz wideband transistor Product specification b7E D , wideband transistor FEATURES Product specification b?E ] > BFR520 e PINNING â'¢ High -
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S3T31 00ESS33
Abstract: Semiconductors Product specification -N AMER PHILIPS/DISCRETE b?E D- NPN 9 GHz wideband transistor BFR520 , /DISCRETE b7E D- NPN 9 GHz wideband transistor BFR520 lc (mA) :6 V. Fig.10 Minimum noise figure and , Product specification -N AMER PHILIPS/DISCRETE L.7E D- NPN 9 GHz wideband transistor BFR520 Table 2 , Product specification -N AHER PHILIPS/DISCRETE b7E D- NPN 9 GHz wideband transistor BFR520 Table 4 , ? 270 MAPX Product specification N AHER PHILIPS/DISCRETE b7E D- NPN 9 GHz wideband transistor BFR520 -
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NFE 02 352 equivalent transistor 2 SA 1469 KMI 814 BF 914 transistor ic LC 8712 MRA 843 0DES533 IS21P
Abstract: resistance, and FET RF equivalent circuit, are stored in a database. From this database, a statistical , +25°C -40,25,85°C 280 20 C Autoclave 96 hrs 100% RH 15 psi 76 C Electrical Test ATP at +25°C 76 D Temperature Cycle 200 cycles -55 to +150°C 30 min dwell at extremes 96 D Electrical ATP at 25°C -40,25,85 , 13. Distributed matching is shown, although an equivalent lumped element approach would also suffice , Without Notice. 18-84 _ M/A-COM, Inc. North America: Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81 (03 -
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MIL-STD-2015 MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 ISO-9001 1500-MH 1900-MH 900-MH
Abstract: AN34 S i321 X H A R D W A R E R E F E R E N C E G U I D E Introduction The Silicon Laboratories , 12 mA = 188.4 mW. ! OHT: During OHT, BJTBIAS flows in both Q1 and Q2. Assuming forward OHT, Q2 has , 887 mW limit at maximum ambient temperature, a SOT223 (~2 W at room temperature) or equivalent , used to replace the Q1, Q2, Q3, Q4, Q5, and Q6 transistor circuits. The use of this IC reduces the , Protection" provides the recommendation for the Si3201 power threshold setting based on the equivalent Silicon Laboratories
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diode i321 BS123 IRLL014N MPSA29 equivalent SIDAC Si3210 R14--B
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