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Part Manufacturer Description PDF & SAMPLES
219-2-0-SW-7-9-77 Airpax CIR BRKR MAG-HYDR 77A 600VAC
219-3-1-65-7-9-77 Airpax CIR BRKR MAG-HYDR 77A 600VAC
BTN7970BAUMA1 Infineon Technologies AG Half Bridge Based Peripheral Driver, 77A, MOS, PSSO7, GREEN, PLASTIC, TO-263, 7 PIN
BTN8980TAAUMA1 Infineon Technologies AG Half Bridge Based Peripheral Driver, 77A, MOS, PSSO7, GREEN, PLASTIC, TO-263, 7 PIN
VVZB120-12IO2 IXYS Corporation Silicon Controlled Rectifier, 77A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 3 Element, MODULE-11
VVZB120-16IO2 IXYS Corporation Silicon Controlled Rectifier, 77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 3 Element, MODULE-11

ed+77A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ID = -13A IRFY9240 â'" â'" 0.50 ID = -4.9A â'" â'" 0.58 ID = -7.7A vGS(th) Gate Threshold , -9.3A vgs = -10v, IRFY9140 31 â'" 60 id = -13A vds = 0.5 x vds max- IRFY9240 28 â'" 60 id -7.7A , = -10v, IRFY9140 3.7 â'" 13 id = -13A vds = 0-5 x vds max- IRFY9240 3.0 â'" 15 id = -7.7A , IRFY9240 4.5 â'" 38 lD = -7.7A td(ori) Turn-on Delay Time IRFY044 â'" â'" 23 ns VDD = 30V, ID = 20A, RQ = , , iD = -7.7A, RQ = 9.10 tr Rise Time IRFY044 â'" â'" 130 ns VDD = 30v, ID = 20A, RQ = 9.10 IRFY120 â -
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IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 IRFY440 irfv120 ed 77A IRFY9130 IRFY9120
Abstract: SN74ALS576B, SN74A LS 5 77A, SN74AS576 O C TAL D -T Y P E ED G E-TR IG G ER ED FLIP -FLO PS W ITH 3-STATE O U TPU TS ^IkKAAl QC7KA CMRdACC 7C D2661, DECEMBER 1982 - REVISED JANUARY 1989 3 , LS 5 77A, SN74AS576 c m u a i c c ic a O CTAL D -TY P E ED G E-TR IG G ER ED FU P -FLO P S W ITH , . 2-392 Te x a s In s t r u m e n t s SN74ALS576B, SN 74A LS 5 77A, SN54ALS576A O C TAL D -T Y P E , 77A, SN54ALS576A O C TAL D -TY P E ED G E-TR IG G ER ED FLIP -FLO PS W ITH 3-STATE O U TPU TS -
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74ALS577 l8577 ALS577A SN54ALSS76A SN84AS576 SNS4ALS576A SN54AS576 SN54ALS
Abstract: -2.0 Id = -4.9A Id = -7.7A v GS(th) Gate Threshold Voltage N-Channel P-Channel V VDS , q s = io v , v d s = 0 5 x v d s max' = -9 .3 a vqs = - io v , v ds = -1 3 a lD = -7.7A , d = -5 0 v , id = - 13A, R g = 9.10 v d d = - 100V, id = -7.7A, r q v d d = 3° v , id = 20A, r q = , = _ io v V d d « - 100V, Id - -7.7A, Rg - 9.10 Modified MOSFET symbol showing the internal , » = = * Test Conditions 20A 7.3A 11A 18A 12A 6.9A 3.7A 5.5A -5.3A -9.3A -13A -7.7A TC = 25°C, V q -
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I-502 I-503
Abstract: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. · Lower Gate Charge · , < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.21mH, R = 25, Peak I = 77A j G L Advanced Power Technology
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ed 77A DIODE
Abstract: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. · Lower Gate Charge · , Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.21mH, R = 25W, Peak I = 77A j Advanced Power Technology
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77A DIODE
Abstract: APT50M60L2VR 500V 77A 0.060W POWER MOS V ® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. · TO-264 MAX Package · 100% Avalanche Tested D · Faster , 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.08mH, R = 25W, Peak I = 77A j G L Advanced Power Technology
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DIODE ED 92 APT50M60
Abstract: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77°C) R.M.S Reverse Current Peak Turn-Off Current rTGQM â'"3000A Critical Rate of Rise of On-State Current , Waveform at Tf=77°C Note 4 : V d = 1 / 2 V d r m , It M â'"4000A, I(jm ^25A Note 5 : Ambient Temperature -
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13-120K1A
Abstract: : 10 kâ"¦ Type II, III (10 kâ"¦ @ 25°C; 77°F) Software configurable Accuracy: ± 0.1°C @ 25 , kâ"¦ Type II, III (10 kâ"¦ @ 25°C; 77°F) Software configurable Dry Contact 0-3.3 VDC 20 Hz , : 10 kâ"¦ Type II, III (10 kâ"¦ @ 25°C; 77°F) Software configurable Accuracy: ± 0.1°C @ 25 , kâ"¦ Type II, III (10 kâ"¦ @ 25°C; 77°F) Software configurable Dry Contact 0-3.3 VDC 20 Hz , °C; 77°F) Software configurable Accuracy: ± 0.1°C @ 25°C (controller only) Dry Contact 0-3.3 VDC 1 Distech Controls
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ECL-PTU-107 ECL-PTU-207 ECL-PTU-208 ECL-PTU-307 ECL-PTU-308 05DI-DSELPTU-11
Abstract: .a i= > M A * . .2 0 S . t_ T ~ M AX. cn B/ZS /4-JZ /4-/Z rt-'Z &CK.4-& -J B- se e r. 9 -8 N O T£ / ' S E E Pfi£7~ A/O. 4 /4 S O FOÆ fiOD/r/OM SC tNFCÆMJT/OA/. TAPE /s/sOu$vo,i 7KG, M % fg /Æ MOUNTED AAJMÆ&e TV* t.o*i rfWSsS 4f-8Z? -2^./¿OASdt *0/8-£&#$$- 77A/ it . /CO M/Jf . 0/3- £.C4S$ ·77/V tt .oa3-£#/?Z$ - 4/S5& /* } - -./&0M/X. * Fbf?EJ6A) P&dXACTlo/O O J L Y TSij terminai to be supplied in individuel form, not at V continuous strip. S-26 - -
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Abstract: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ,1995 CCC- J TOT- REVISIONS SK (c) COPYRIGHT 1995 BY AMP INCORPORATED.ALL RIGHTS RESERVED. P LTR DESCRIPTION Ã'CN DATE DUN APVD 0 RELEASED FJQO-3551-95 1 /NOV '95 K. I Si D C B 3.7 ^¡^ ^ y I D â'" ^ CONTACT ID MARK " A * - " AI* mm A - A SECT 'A'-'A 5.5 5ECT "B"- B I-7.7â'" ini_a_in Ìtì-è-Ht* ID â'"i? WIRE RANGE ID MARK J s -(t>- REF â 38.7â'" 4.8 â 33. 7 15.8 PLATING ID NO àh> ^ I D NO AMP MARK AMP^â'" ^ 0.5MAX CL/P -
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AMP1470-19 contact id 31/OCT/ D-5000
Abstract: A d va n ced W/Æ P o w e r Te c h n o l o g y R A PT50M 50JVR soov 77a o.osoq POWER MOS V Pow er M OS V® is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® also ach ie ve s fa s te r sw itchin g spe ed s through optim ized gate layout , -750 Method 3471 @ Starting Tj = +25°C, L = 1.21 mH, Rq = 25£2, Peak II = 77A APT Reserves the right to -
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APT50M50JVR E145592
Abstract: UNCONTROLLED DOCUMENT 75.00 [2.953] 70,00 [2,756] VA 1,00 C0.039: MAX. 3,21 [0,126] U SC'.0.50 PART NUMBER SSB-LX7QQ3SUGW PRELIMINARY IN P/N DIR NOTES: r- 3 00 [0118] VA L LUMEX p/N' DATE C0DE' AND BIN C0DE-2. CUSTOMER P/N REV. 1.00 [0.039] J~ MAX, 1 r 1.00 [0.039] 1 PIN 28 E,54 CO,L00] (£7 PLS.5 7.7Û [0.303] 6.00 [0.236] r 6.00 [0,236] PIN 1 - 00,51 [00.020] (28 PLS.) 1.27 [0.050] PIN £8 PIN L 14 LEDS 14 ELECTRO-OPTICAL CHARACTERISTICS TA=25'C lf= 20MA LIMITS OF SAFE OPERATION AT 25'C PARAMETER -
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LX7003SUGW
Abstract: ORAWXNe HAOE IN THIRD AN8LE PROJECTION D B THIS DRAUINO IS UNPUBLISHED. (g) COPYRIGHT 19 RELEASED FOR PUBLICATION ,19 BY AMP INCORPORATED. ALL INTERNATIONAL RIGHTS RCSCRVCO. LOG D1ST M 4.34±0.08 DIA i. 1 77±. 003J FOR #8 STUD SERRATIONS REVISIONS ZONE LTR B DESCRIPTION REVISED PER 0720-0230-93 DATE APIPO 2/2S/94 ^OAP iâ'"Q _, < J \J L (â'"sJ ^_r-\ O/MENSIONS LISTEO IN mm f INCHES J 3.45 MAX DIA f. 135J 7.92±0.20 Ã. 312±.008J W ÌRE^MNGE /yT^ E13288 vS' L/sted 22-16 AUG STRANDED 22-76 AWG -
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MIL-T-7928 008J 260J C509-3 01MENSIONS B-152 00254T 0001OOJ
Abstract: L77A . . -70 +/ S 5 " * ¿2 . _. _. _ .77a ïs T & w -
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77A/G
Abstract: * . -r ;ï'-77ïï>T.:ïï.?77ï>':vï"? â'¢ 7 7 7 7 7 7 7 7 7 7 -7 7 7 7 7 7 7 7 7 7 7 7 7 .- â -
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EDI2GG43264V EDI2KG43264V EDI2GG43264V95D EDI2GG43264V10D EDI2GG43264V11D EDI2GG43264V12D
Abstract: 77â'MG120 Fan Guard, Metal Features For 120mm x 120mm Fans 77â'FF40 thru 77â'FF120 Fan , 40mm uses 77â'FF40 60mm x 60mm uses 77â'FF60 80mm x 80mm uses 77â'FF80 92mm x 92mm uses 77â'FF92 120mm x 120mm uses 77â'FF120 77â'FC12 thru 77â'FC72 Fan Cord Features Black Molded PVC Hood , '1 60 C VWâ'1 22AWGX2C Cord Lengths: 77â'FC12 â' 12 inches 77â'FC24 â' 24 inches 77â'FC36 â' 36 inches 77â'FC48 â' 48 inches 77â'FC72 â' 72 inches 77â'FC12P thru 77â'FC72P Fan Cord NTE Electronics
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35PPI FC24P FC36P FC48P
Abstract: PD - 93888B IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET® Power MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized , 10 3.0 1 ID = 77A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 International Rectifier
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AN-994 IRF3704/3704S/3704L EIA-418
Abstract: PD - 93888A IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET® Power MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized , 3.0 1 ID = 77A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 International Rectifier
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Abstract: Philips S em iconductors â  b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated protection ring against static discharges. They feature a low forward voltage drop, low leakage current and a low capacitance and as such can be used in very fast switching applications. b*1E D â -
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BAT81 BAT82 BAT83 53T31 DO-34
Abstract: / / ' / 1 -7-7â'" 7- SUBSTRATE X r?t r,/i r; Fig. 3 Two-port SAW Resonator A KJ -
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10MFI
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