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Part Manufacturer Description PDF & SAMPLES
219-2-0-SW-7-9-77 Airpax CIR BRKR MAG-HYDR 77A 600VAC
219-3-1-65-7-9-77 Airpax CIR BRKR MAG-HYDR 77A 600VAC
BTN7970BAUMA1 Infineon Technologies AG Half Bridge Based Peripheral Driver, 77A, MOS, PSSO7, GREEN, PLASTIC, TO-263, 7 PIN
VVZB120-12IO2 IXYS Corporation Silicon Controlled Rectifier, 77A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 3 Element, MODULE-11
BTN8980TAAUMA1 Infineon Technologies AG Half Bridge Based Peripheral Driver, 77A, MOS, PSSO7, GREEN, PLASTIC, TO-263, 7 PIN
IPP77N06S212AKSA2 Infineon Technologies AG MOSFET N-CH 55V 77A TO220-3

ed 77A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 012-061 50 012-062 50 012-062 50 012-062 50 012-061 50 012-062 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,EO E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED T0-257AA Y-PAK 1 , -200 0.60 0.31 0.21 0.50 50 012-063 50 012-064 50 012-065 50 012-065 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED IIRFY G D S ^^â UiltflAilblULl^^H FOR OTHER , ID = -13A IRFY9240 â'" â'" 0.50 ID = -4.9A â'" â'" 0.58 ID = -7.7A vGS(th) Gate Threshold -
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IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 irfv120 IRFY9130 IRFY9120 IRFY440 IRFY430
Abstract: SN74ALS576B, SN74A LS 5 77A, SN74AS576 O C TAL D -T Y P E ED G E-TR IG G ER ED FLIP -FLO PS W ITH 3 , LS 5 77A, SN74AS576 c m u a i c c ic a O CTAL D -TY P E ED G E-TR IG G ER ED FU P -FLO P S W ITH , 77A, SN54ALS576A O C TAL D -TY P E ED G E-TR IG G ER ED FLIP -FLO PS W ITH 3-STATE O U TPU TS , of the flip-flops. Old data can be retain ed or new data can be entered w hile the outputs are off , . 2-392 Te x a s In s t r u m e n t s SN74ALS576B, SN 74A LS 5 77A, SN54ALS576A O C TAL D -T Y P E -
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74ALS577 l8577 D2661 ALS577A SN54ALSS76A SN84AS576 SNS4ALS576A SN54AS576
Abstract: Screen Level Options E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED Case Outline 100 100 100 200 400 500 500 60 T0 , 012-064 012-065 012-065 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED IRFY IRFY(M , -2.0 Id = -4.9A Id = -7.7A v GS(th) Gate Threshold Voltage N-Channel P-Channel V VDS , q s = io v , v d s = 0 5 x v d s max' = -9 .3 a vqs = - io v , v ds = -1 3 a lD = -7.7A -
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IRFY9140 I-502 I-503
Abstract: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by , UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM VA FO AD IN Drain-Source , MHz UNIT 11450 Coss MAX 440 Crss Qg Qgs AL IC HN EC ON T I ED AT NC RM , < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.21mH, R = 25, Peak I = 77A j G L Advanced Power Technology
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ed 77A DIODE
Abstract: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by , UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM VA FO AD IN Drain-Source , MHz UNIT 11450 Coss MAX 440 Crss Qg Qgs AL IC HN EC ON T I ED AT NC RM , Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.21mH, R = 25W, Peak I = 77A j Advanced Power Technology
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77A DIODE
Abstract: APT50M60L2VR 500V 77A 0.060W POWER MOS V ® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect , otherwise specified. APT50M60 UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM , .] @ 25°C 210 VGS = 15V 20 AL IC HN EC ON T I ED AT NC RM VA FO AD IN , 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.08mH, R = 25W, Peak I = 77A j G L Advanced Power Technology
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DIODE ED 92
Abstract: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77 , Waveform at Tf=77°C Note 4 : V d = 1 / 2 V d r m , It M â'"4000A, I(jm ^25A Note 5 : Ambient Temperature , ed by T O SH IB A CO R P O R A TIO N fo r a n y in frin ge m en ts o f intellectual property or o th -
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13-120K1A
Abstract: : 10 kâ"¦ Type II, III (10 kâ"¦ @ 25°C; 77°F) Software configurable Accuracy: ± 0.1°C @ 25 , kâ"¦ Type II, III (10 kâ"¦ @ 25°C; 77°F) Software configurable Dry Contact 0-3.3 VDC 20 Hz , UL Listed (CDN & US) IEC61000-6-3: 2006 + A1: ed.2010 Generic standards for residential , : 10 kâ"¦ Type II, III (10 kâ"¦ @ 25°C; 77°F) Software configurable Accuracy: ± 0.1°C @ 25 , kâ"¦ Type II, III (10 kâ"¦ @ 25°C; 77°F) Software configurable Dry Contact 0-3.3 VDC 20 Hz Distech Controls
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ECL-PTU-107 ECL-PTU-207 ECL-PTU-208 ECL-PTU-307 ECL-PTU-308 05DI-DSELPTU-11
Abstract: .a i= > M A * . .2 0 S . t_ T ~ M AX. cn B/ZS /4-JZ /4-/Z rt-'Z &CK.4-& -J B- se e r. 9 -8 N O T£ / ' S E E Pfi£7~ A/O. 4 /4 S O FOÆ fiOD/r/OM SC tNFCÆMJT/OA/. TAPE /s/sOu$vo,i 7KG, M % fg /Æ MOUNTED AAJMÆ&e TV* t.o*i rfWSsS 4f-8Z? -2^./¿OASdt *0/8-£&#$$- 77A/ it . /CO M/Jf . 0/3- £.C4S$ ·77/V tt .oa3-£#/?Z$ - 4/S5& /* } - -./&0M/X. * Fbf?EJ6A) P&dXACTlo/O O , TÜ5TÜH01W REFERENCE ONLY A M P IN C O R P O R A T ED M I M i a ^ R A KM W L UZ jg 5 CLAM -I* T # -
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Abstract: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ,1995 CCC- J TOT- REVISIONS SK (c) COPYRIGHT 1995 BY AMP INCORPORATED.ALL RIGHTS RESERVED. P LTR DESCRIPTION Ã'CN DATE DUN APVD 0 RELEASED FJQO-3551-95 1 /NOV '95 K. I Si D C B 3.7 ^¡^ ^ y I D â'" ^ CONTACT ID MARK " A * - " AI* mm A - A SECT 'A'-'A 5.5 5ECT "B"- B I-7.7â'" ini_a_in Ìtì-è-Ht* ID â'"i? WIRE RANGE ID MARK J s , /N) AMP1470-19 REV 10/93 f i 029366 ED "E" -
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contact id 31/OCT/ D-5000
Abstract: A d va n ced W/Æ P o w e r Te c h n o l o g y R A PT50M 50JVR soov 77a o.osoq POWER MOS V Pow er M OS V® is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V® also ach ie ve s fa s te r sw itchin g spe ed s through optim ized gate layout , -750 Method 3471 @ Starting Tj = +25°C, L = 1.21 mH, Rq = 25£2, Peak II = 77A APT Reserves the right to -
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APT50M50JVR E145592
Abstract: UNCONTROLLED DOCUMENT 75.00 [2.953] 70,00 [2,756] VA 1,00 C0.039: MAX. 3,21 [0,126] U SC'.0.50 PART NUMBER SSB-LX7QQ3SUGW PRELIMINARY IN P/N DIR NOTES: r- 3 00 [0118] VA L LUMEX p/N' DATE C0DE' AND BIN C0DE-2. CUSTOMER P/N REV. 1.00 [0.039] J~ MAX, 1 r 1.00 [0.039] 1 PIN 28 E,54 CO,L00] (£7 PLS.5 7.7Û [0.303] 6.00 [0.236] r 6.00 [0,236] PIN 1 - 00,51 [00.020] (28 PLS.) 1.27 [0.050] PIN £8 PIN L 14 LEDS , UNCONTROLLED DOCUMENT UNLESS OTHERWISE SFECI Fl ED TOLERANCES PER DECNAL PRECI3DN ARE," X=±1 (tU.059], X.X=iD -
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LX7003SUGW
Abstract: ORAWXNe HAOE IN THIRD AN8LE PROJECTION D B THIS DRAUINO IS UNPUBLISHED. (g) COPYRIGHT 19 RELEASED FOR PUBLICATION ,19 BY AMP INCORPORATED. ALL INTERNATIONAL RIGHTS RCSCRVCO. LOG D1ST M 4.34±0.08 DIA i. 1 77±. 003J FOR #8 STUD SERRATIONS REVISIONS ZONE LTR B DESCRIPTION REVISED PER 0720-0230-93 DATE APIPO 2/2S/94 ^OAP iâ'"Q _, < J \J L (â'"sJ ^_r-\ O/MENSIONS LISTEO IN mm f INCHES J 3.45 MAX , STRANDED A LR?189 Cer tifi ed MILITARY P/N AND CLASS NOT CERTIFIED NOT APPLICABLE A STAMP AMP 22-18* APPROX -
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E13288 MIL-T-7928 008J 260J C509-3 01MENSIONS B-152 00254T
Abstract: L77A . . -70 +/ S 5 " * ¿2 . _. _. _ .77a ïs T & w , ED FRACTIONS XX XXX ± ± *B B F « » 3 A° G O W AN D A ELECTRONICS CORP. Gowanda, N. Y -
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77A/G
Abstract: ://www.electronlc-deslgns.com 7 EDI2GG43264V Rev. 0 12/98 ECO#10859 ^ED I ELECTRONIC DESIGNS, INC. Pin Configuration 7 91 E4| Ira cm â¡cud vcc jar vcc ED/2GG43264I/ 7 Megabyte Synchronous Card , con d ition s for exten d ed p eriod s m a y affect reliability. EDI2GG43264V 1 Megabyte , * . -r ;ï'-77ïï>T.:ïï.?77ï>':vï"? â'¢ 7 7 7 7 7 7 7 7 7 7 -7 7 7 7 7 7 7 7 7 7 7 7 7 .- â -
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EDI2KG43264V EDI2GG43264V95D EDI2GG43264V10D EDI2GG43264V11D EDI2GG43264V12D EDI2GG43264V15D
Abstract: MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer , 10 3.0 1 ID = 77A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 , (inches) TR R 1 .6 0 (.0 63 ) 1 .5 0 (.0 59 ) 4 .1 0 ( .1 6 1) 3 .9 0 ( .1 5 3) F E ED D IRE C TIO , .5 2 (.17 8) 16 .1 0 (.63 4) 15 .9 0 (.62 6) F E ED D IR E CT IO N 13.50 (.532) 12.80 , URED @ HU B. 4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E. 30.40 (1.197) MA X. 26.40 International Rectifier
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IRF3704 IRF3704S IRF3704L AN-994 93888B IRF3704/3704S/3704L
Abstract: MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer , 3.0 1 ID = 77A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 , ( .1 5 3) F E ED D IRE C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1.60 (.06 3) 1.50 (.05 9) 1 , ) 4 .7 2 (.13 6) 4 .5 2 (.17 8) 16 .1 0 (.63 4) 15 .9 0 (.62 6) F E ED D IR E CT IO N 13.50 , . DIM ENS ION MEAS URED @ HU B. 4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E. 30.40 (1.197 International Rectifier
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EIA-418
Abstract: Philips S em iconductors â  b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated protection ring against static discharges. They feature a low forward voltage drop, low leakage current , unless otherwise specif ed. SYMBOL VF PARAMETER CONDITIONS forward voltage UNIT MAX -
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BAT81 BAT82 BAT83 53T31 DO-34
Abstract: be select­ ed by the user's oscillator circuit. RE F. ID T IDT REF IN â U T IX / / ' / 1 -7-7â'" 7- SUBSTRATE X r?t r,/i r; Fig. 3 Two-port SAW Resonator A KJ , by the input IDT, travels along the surface of the substrate to be detect­ ed by the output IDT -
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10MFI
Abstract: h i^ h 7 N otes: (5) t w c ' s m inim um cycle tim e to be allow ed from the system perspective , \ /77A /77A Í7ÍIA ÏÏTT k /77A f f iT' 'W P " - *B L C - w w w w w w r WE S , page w rite operation, OE can be strob ed LO W : e.g. this can be d o n e w ith CE and W E H IG H to fe , pe dance JE T xm W M D on't Care: C h anges A llow ed N/A 3-22 X2816C Normalized -
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x2816 x2816c-20 x2816c-90
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