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ed 77A DIODE

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Abstract: 012-061 50 012-062 50 012-062 50 012-062 50 012-061 50 012-062 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,EO E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED T0-257AA T0-257AA Y-PAK 1 , -200 0.60 0.31 0.21 0.50 50 012-063 50 012-064 50 012-065 50 012-065 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED IIRFY G D S ^^■UiltflAilblULl^^H FOR OTHER , ID = -13A IRFY9240 IRFY9240 — — 0.50 ID = -4.9A — — 0.58 ID = -7.7A vGS(th) Gate Threshold ... OCR Scan
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12 pages,
617.65 Kb

IRFY9140 ED 78A IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY430 IRFY440 IRFY9120 IRFY9130 ed 77A IRFY340 irfv120 TEXT
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Abstract: Screen Level Options E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED Case Outline 100 100 100 200 400 500 500 60 T0 , 012-064 012-065 012-065 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED IRFY IRFY(M , -2.0 Id = -4.9A Id = -7.7A v GS(th) Gate Threshold Voltage N-Channel P-Channel V VDS , q s = io v , v d s = 0 5 x v d s max' = -9 .3 a vqs = - io v , v ds = -1 3 a lD = -7.7A ... OCR Scan
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33 pages,
1027.04 Kb

irfy430 IRFY340 TEXT
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Abstract: APT50M50JLC APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate , UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM VA FO AD IN Drain-Source , MHz UNIT 11450 Coss MAX 440 Crss Qg Qgs AL IC HN EC ON T I ED AT NC RM , DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN TYP MAX 77 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode ... Advanced Power Technology
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datasheet

2 pages,
34.95 Kb

APT50M50JLC ed 77A DIODE TEXT
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Abstract: APT50M50JLC APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate , UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM VA FO AD IN Drain-Source , MHz UNIT 11450 Coss MAX 440 Crss Qg Qgs AL IC HN EC ON T I ED AT NC RM , DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN TYP MAX 77 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode ... Advanced Power Technology
Original
datasheet

2 pages,
34.81 Kb

ed 77A APT50M50JLC 77A DIODE ed 77A DIODE TEXT
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Abstract: APT50M60L2VR APT50M60L2VR 500V 77A 0.060W POWER MOS V ® TO-264 Max Power MOS V® is a new generation of , otherwise specified. APT50M60 APT50M60 UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM , .] @ 25°C 210 VGS = 15V 20 AL IC HN EC ON T I ED AT NC RM VA FO AD IN , Delay Time nC Fall Time ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions Continuous Source Current ISM Pulsed Source Current 1 VSD Diode ... Advanced Power Technology
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datasheet

2 pages,
33.53 Kb

DIODE ED 92 APT50M60L2VR 77A DIODE ed 77A DIODE TEXT
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Abstract: A d va n ced W/Æ P o w e r Te c h n o l o g y R A PT50M PT50M 50JVR 50JVR soov 77a o.osoq POWER MOS V , on-resistance. Pow er M OS V® also ach ie ve s fa s te r sw itchin g spe ed s through optim ized gate layout , Rq = 0.6Q 320 25 20 85 12 480 50 40 125 24 ns SOURCE-DRAIN DIODE RATINGS AND , (Body Diode) Pulsed Source Current © (Body Diode) MIN TYP MAX 77 UNIT Amps Volts ns |iC Diode Forward Voltage © (VQS = 0V, ls = - lDfContl) Reverse Recovery Time (lg = -lD[Cont], dlg/dt = ... OCR Scan
datasheet

4 pages,
180.89 Kb

50JVR APT50M50JVR PT50M TEXT
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Abstract: = 4500V (Note 1) l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77 , Waveform at Tf=77°C Note 4 : V d = 1 / 2 V d r m , It M —4000A, I(jm ^25A Note 5 : Ambient Temperature , ed by T O SH IB A CO R P O R A TIO N fo r a n y in frin ge m en ts o f intellectual property or o th , Thermal Resistance (Junction DC °C/W Rth (j-f) to Fin) Diode Side 0.025 JU S JU S — â ... OCR Scan
datasheet

4 pages,
97.08 Kb

SGR3000GXH26 TEXT
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Abstract: MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer , Pulse Avalanche Energy Avalanche Current 216 71 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time , diode. TJ = 25°C, IS = 35.5A, VGS = 0V TJ = 125°C, I S = 35.5A, VGS = 0V TJ = 25°C, IF = 35.5A, VR ... International Rectifier
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datasheet

10 pages,
234.17 Kb

IRF3704S IRF3704L IRF3704 AN-994 ed 77A DIODE TEXT
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Abstract: MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer , Pulse Avalanche Energy Avalanche Current 216 71 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery , nC ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S ... International Rectifier
Original
datasheet

10 pages,
122.54 Kb

IRF3704S IRF3704L IRF3704 ed 77A DIODE AN-994 93888B TEXT
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Abstract: Philips S em iconductors ■ b b S B IB l DQ EbS7T 77A M APX Prelim inary , mA diode capacitance 1.6 P F junction temperature 200 °C cd l i _  , unless otherwise specif ed. SYMBOL VF PARAMETER CONDITIONS forward voltage UNIT MAX , vR= vRrax 200 nA cd diode capacitance VR=1 V; f= 1 MHz 1.6 pF July 1991 , < pF) 1,2 0,8 0,4 'o 4 8 12 V R ( V ) 16 f = 1 MHz. Fig.5 Diode capacitance as a ... OCR Scan
datasheet

5 pages,
124.83 Kb

TEXT
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