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Part Manufacturer Description PDF & SAMPLES
UC1612J Texas Instruments SILICON, RECTIFIER DIODE, CERDIP-8
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE

ed 77A DIODE

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 012-061 50 012-062 50 012-062 50 012-062 50 012-061 50 012-062 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,EO E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED T0-257AA Y-PAK 1 , -200 0.60 0.31 0.21 0.50 50 012-063 50 012-064 50 012-065 50 012-065 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED IIRFY G D S ^^â UiltflAilblULl^^H FOR OTHER , ID = -13A IRFY9240 â'" â'" 0.50 ID = -4.9A â'" â'" 0.58 ID = -7.7A vGS(th) Gate Threshold -
OCR Scan
IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 irfv120 ed 77A IRFY9130 IRFY9120 IRFY440
Abstract: Screen Level Options E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED Case Outline 100 100 100 200 400 500 500 60 T0 , 012-064 012-065 012-065 1 10/91 E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED IRFY IRFY(M , -2.0 Id = -4.9A Id = -7.7A v GS(th) Gate Threshold Voltage N-Channel P-Channel V VDS , q s = io v , v d s = 0 5 x v d s max' = -9 .3 a vqs = - io v , v ds = -1 3 a lD = -7.7A -
OCR Scan
irfy430 IRFY9140 I-502 I-503
Abstract: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate , UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM VA FO AD IN Drain-Source , MHz UNIT 11450 Coss MAX 440 Crss Qg Qgs AL IC HN EC ON T I ED AT NC RM , DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN TYP MAX 77 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode Advanced Power Technology
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MIL-STD-750
Abstract: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate , UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM VA FO AD IN Drain-Source , MHz UNIT 11450 Coss MAX 440 Crss Qg Qgs AL IC HN EC ON T I ED AT NC RM , DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN TYP MAX 77 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode Advanced Power Technology
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77A DIODE
Abstract: APT50M60L2VR 500V 77A 0.060W POWER MOS V ® TO-264 Max Power MOS V® is a new generation of , otherwise specified. APT50M60 UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM , .] @ 25°C 210 VGS = 15V 20 AL IC HN EC ON T I ED AT NC RM VA FO AD IN , Delay Time nC Fall Time ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions Continuous Source Current ISM Pulsed Source Current 1 VSD Diode Advanced Power Technology
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DIODE ED 92
Abstract: A d va n ced W/Æ P o w e r Te c h n o l o g y R A PT50M 50JVR soov 77a o.osoq POWER MOS V , on-resistance. Pow er M OS V® also ach ie ve s fa s te r sw itchin g spe ed s through optim ized gate layout , Rq = 0.6Q 320 25 20 85 12 480 50 40 125 24 ns SOURCE-DRAIN DIODE RATINGS AND , (Body Diode) Pulsed Source Current © (Body Diode) MIN TYP MAX 77 UNIT Amps Volts ns |iC Diode Forward Voltage © (VQS = 0V, ls = - lDfContl) Reverse Recovery Time (lg = -lD[Cont], dlg/dt = -
OCR Scan
APT50M50JVR E145592
Abstract: = 4500V (Note 1) l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77 , Waveform at Tf=77°C Note 4 : V d = 1 / 2 V d r m , It M â'"4000A, I(jm ^25A Note 5 : Ambient Temperature , ed by T O SH IB A CO R P O R A TIO N fo r a n y in frin ge m en ts o f intellectual property or o th , Thermal Resistance (Junction DC °C/W Rth (j-f) to Fin) Diode Side 0.025 JU S JU S â'" â -
OCR Scan
SGR3000GXH26 13-120K1A
Abstract: MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer , Pulse Avalanche Energy Avalanche Current 216 71 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time , diode. TJ = 25°C, IS = 35.5A, VGS = 0V TJ = 125°C, I S = 35.5A, VGS = 0V TJ = 25°C, IF = 35.5A, VR International Rectifier
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IRF3704 IRF3704S IRF3704L AN-994 IRF3704/3704S/3704L EIA-418
Abstract: MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer , Pulse Avalanche Energy Avalanche Current 216 71 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery , nC ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S International Rectifier
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93888B
Abstract: Philips S em iconductors â  b b S B IB l DQ EbS7T 77A M APX Prelim inary , mA diode capacitance 1.6 P F junction temperature 200 °C cd l i _  , unless otherwise specif ed. SYMBOL VF PARAMETER CONDITIONS forward voltage UNIT MAX , vR= vRrax 200 nA cd diode capacitance VR=1 V; f= 1 MHz 1.6 pF July 1991 , < pF) 1,2 0,8 0,4 'o 4 8 12 V R ( V ) 16 f = 1 MHz. Fig.5 Diode capacitance as a -
OCR Scan
BAT81/82/83 BAT81 BAT82 BAT83 53T31 DO-34
Abstract: 20V 8.5m 77A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS , 220 mJ ­­­ 28 A Diode Characteristics Parameter Min. Typ. Max. Units h IS Continuous Source Current ­­­ ­­­ 77 ISM (Body Diode) Pulsed Source Current ­­­ ­­­ 280 Ãc A (Body Diode) V SD Diode Forward Voltage ­­­ 0.88 1.3 ­­­ 0.82 , p-n junction diode. TJ = 25°C, IS = 36A, V GS = 0V TJ = 125°C, IS = 36A, VGS e = 0V e TJ = 25 International Rectifier
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IRF3706 IRF3706S IRF3706L IRF530S 93936C IRF3706/S/L
Abstract: °C unless otherwise not 4 3 2 1 (kj ed Symbol Parameter NDS9948 Units Voss , Thermal Resistance, Junction-to-Case (Note 11 40 °C/W 4-180 bSOllBD DD40015 77Û â  This , DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 's Maximum Continuous Drain-Source Diode Forward Current -1.7 A VsD Drain-Source Diode Forward Voltage VGS = 0V, ls= -2.3 A (Note 2) -0.98 -1.2 V , - - ! , -0.9 -1.2 -1.5 -1.8 , , BODY DIODE FORWARD VOLTAGE IVI Figure 8. Body Diode -
OCR Scan
d3s diode DD4001 S0113D
Abstract: MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer , Pulse Avalanche Energy Avalanche Current 216 71 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery , nC ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S International Rectifier
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Abstract: operating junction temperature * Critical rate of rise of reverse voltage < -=-77â  7 thermal runaway condition for a diode on its own heatsink â'" Rth(j-a) July 1 9 9 9 - Ed: 2A 1/5 1N582x -
OCR Scan
1N582 D0-201 1N5820 1N5821 1N5822 DO-201
Abstract: .-65°Cto +125°C Operating Temperature Range OP-77A, OP-77B (J, Z, RC).-55°C to +125°C , . PARAMETER SYMBOL CONDITIONS MIN OP-77A TYP MAX MIN OP-77B TYP MAX UNITS Input Offset Voltage V vos - 10 25 , , unless otherwise noted. PARAMETER SYMBOL CONDITIONS MIN OP-77A TYP MAX MIN OP-77B TYP MAX UNITS Input , Consumption Pd Vs â'" ±15V, No Load - 60 75 - 60 75 mW NOTES: 1. OP-77A: TCV0S is 100% tested. 2 , MERS ATH ( ED IN 20 UN TS) à \ / \ \r N MAX HIN WE 0 -
OCR Scan
OP-07 20-PIN OP77AJ OP77AZ OP77EJ OP77EZ 0p77 diode 77G op77g sot-883 r9 OP77EP mers 130
Abstract: 20V 8.5m 77A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS , ­­­ 220 mJ ­­­ 28 A Diode Characteristics Parameter Min. Typ. Max. Units h IS Continuous Source Current ­­­ ­­­ 77 ISM (Body Diode) Pulsed Source Current ­­­ ­­­ 280 Ãc A (Body Diode) V SD Diode Forward Voltage ­­­ 0.88 1.3 , integral reverse p-n junction diode. TJ = 25°C, IS = 36A, V GS = 0V TJ = 125°C, IS = 36A, VGS e = 0V International Rectifier
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ED marking code diode IRL3103L to262 pcb footprint
Abstract: 20V 8.5m 77A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS , ­­­ 220 mJ ­­­ 28 A Diode Characteristics Parameter Min. Typ. Max. Units h IS Continuous Source Current ­­­ ­­­ 77 ISM (Body Diode) Pulsed Source Current ­­­ ­­­ 280 Ãc A (Body Diode) V SD Diode Forward Voltage ­­­ 0.88 1.3 , integral reverse p-n junction diode. TJ = 25°C, IS = 36A, V GS = 0V TJ = 125°C, IS = 36A, VGS e = 0V International Rectifier
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Abstract: Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse , MOSFET symbol 89 showing the A G integral reverse 310 S p-n junction diode. 1.3 V TJ = , 2.5V TOP TOP 8.0 A I D = 77A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 , , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 2.8 TC = 25°C TJ = International Rectifier
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IRL3705NS IRL3705NL ed 89a ED 89A marking code IRL3705N IRL3705NSP IRL3705NLP IRL3705NS/LP
Abstract: Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range , (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time ,   89 showing the A G integral reverse   310 S p-n junction diode , A I D = 77A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 , . Typical Source-Drain Diode Forward Voltage A 2.8 TC = 25° C TJ = 175°C Single Pulse 1 1 International Rectifier
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Abstract: PD - 95298 IRF7322D1PbF FETKYä MOSFET / Schottky Diode l l l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF , Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Units -5.3 , /dt ≤ -77A/Âus, VDD ≤ V(BR)DSS, TJ ≤ 150°C Ã' Pulse width ≤ 300Âus; duty cycle ≤ 2% à , (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse International Rectifier
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IRF7322D1P IRF7807D1 807D1 EIA-481 EIA-541
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