500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD
YR2.DIODE Puls Gmbh REDUNDANCY MODULE 10-60VDC 20A
YRM2.DIODE Puls Gmbh REDUNDANCY MODULE 24-60VDC 20A
DDZ9684Q-7 Diodes Incorporated Zener Diode

diode 77a

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Material Coating Material B Light Emitting Diode 77° 77° 110° 110° Table 6 Water , Application Note Light Emitting Diode Evaluation of Coating Materials Contents 1 , notice. 1/6 SE-AP00012 Mar.1, 2013 Application Note Light Emitting Diode 1. Introduction , Light Emitting Diode d Fluorine Resin 0.00 0.05 -0.05 A B C D E 0.10 -0.10 , SE-AP00012 Mar.1, 2013 Light Emitting Diode Application Note 3-2. Degradation Coating materials may Nichia
Original
Abstract: MIN VDD = 333V, VGS = 15V ID = 77A, RG = 5 uJ 3830 SOURCE-DRAIN DIODE RATINGS AND , Peak Diode Recovery dt UNIT Amps (Body Diode) 308 (VGS = 0V, IS = -77A) 1.3 Volts , APT50M60L2VFR 500V 77A 0.060 POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new , Faster Switching · FAST RECOVERY BODY DIODE D G · Lower Leakage S MAXIMUM RATINGS Symbol , ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 250V Turn-off Advanced Power Technology
Original
APT60DF60 77A DIODE TJ125
Abstract: -77A, dl S/dt = 100A/us, VR = 350V) 46 uC dv/ Peak Diode Recovery dt dv/ 231 (Body Diode) 1 (VGS = 0V, IS = -77A) dt 1.2 Amps Volts 6 V/ns MAX UNIT 5 , diode reverse recovery. 10000 8000 6000 4000 Eon 2000 1000 0 10 = 400V = 77A J , APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , (VDS = 480V, ID = 77A, TJ = 125°C) 50 V/ns Amps IAR Repetitive Avalanche Current 7 Microsemi
Original
APT30DF60
Abstract: -227 Package · FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050 S Power MOS 7 is a new , · Lower Gate Charge, Qg 77A D G S All Ratings: TC = 25°C unless otherwise specified , ) Turn-on Delay Time tr 3 VDD = 275V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 15V td(off) VDD = 275V Turn-off Delay Time tf ID = 77A @ 25°C Fall Time Turn-on Switching Energy Eoff INDUCTIVE SWITCHING @ 25°C Turn-off Switching Energy 6 Eon Eoff 1230 ID = 77A Advanced Power Technology
Original
APT55M50JFLL
Abstract: VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -77A, dl S /dt = 100A/us, VR , APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , " from Case for 10 Sec. 300 Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) 50 , Delay Time tr ID = 77A @ 25°C tf 110 Turn-on Switching Energy Eoff Turn-off , Switching Energy 6 165 8 RG = 0.9 Eon ns 12 1670 VDD = 400V, VGS = 15V ID = 77A Advanced Power Technology
Original
Abstract: UNIT Amps Volts ns C 77 231 1 861 46 6 1.2 (Body Diode) (VGS = 0V, IS = - 77A) Reverse , 8000 6000 4000 2000 I = 77A D T = 125°C L = 100H EON includes diode reverse recovery. J T = , APT77N60JC3 600V 77A Super Junction MOSFET · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra , : 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 400V, ID = 77A, TJ = 125°C) Avalanche , = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 10V VDD = Microsemi
Original
transistors mj 1504 mj 1504 ce 77a E145592
Abstract: APT50M60L2VFR 500V 0.060â"¦ 77A POWER MOS V® FREDFET TO-264 Max Power MOS V® is a , Energy Rated â'¢ Faster Switching â'¢ FAST RECOVERY BODY DIODE D G â'¢ Lower Leakage S , Qgd Gate-Drain ("Miller") Charge td(on) ID = 77A @ 25°C Turn-on Delay Time tr , 77A @ 25°C Fall Time Turn-on Switching Energy Eoff INDUCTIVE SWITCHING @ 25°C Turn-off Switching Energy 6 Turn-on Switching Energy Eoff ID = 77A, RG = 5â"¦ 3450 INDUCTIVE Advanced Power Technology
Original
Abstract: Recovery Charge (IS = -77A, dl S/dt = 100A/us, VR = 350V) Peak Diode Recovery dv/ dt 5 V/ns THERMAL , °C J D J = 77A T = 125°C 6000 5000 4000 3000 2000 1000 L = 100uH EON includes diode , APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S , Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) Repetitive Avalanche , Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 10V Advanced Power Technology
Original
7N60JC3
Abstract: p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed , Conditions VGS = 0V, ID = 250uA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 7.7A e VGS(th , 25uA S VDS = 25V, ID = 7.7A nC VGS = 10V Total Gate Charge ­­­ 8.9 13 Qgs1 , 0.77 ­­­ Qgd Gate-to-Drain Charge ­­­ 3.5 ­­­ ID = 7.7A Qgodr ­­­ 3.0 , Inductance ­­­ 7.5 ­­­ VDS = 44V VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5 VGS International Rectifier
Original
IRFI4024H-117P digital audio mosfet 100w audio amplifier 77A MARKING
Abstract: =-250uA VGS=-10V , ID=-7.7A -1 c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Min c VDS=-15V,ID=-7.7A, VGS=-10V nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND , (ON) (m ) Max Rugged and reliable. 30 @ VGS=-10V -30V Suface Mount Package. -7.7A 48 @ , uA -1.8 24 -3 30 V m ohm VGS=-4.5V , ID=-6.2A 36 48 m ohm VDS=-15V , ID=-7.7A , =-10V RGEN=6 ohm 15 28 98 28 ns ns ns ns VDS=-15V,ID=-7.7A,VGS=-10V 22 nC VDS=-15V,ID SamHop Microelectronics
Original
STM4637 015X45
Abstract: Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = - 77A) 1 t rr Q rr Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/s, VR = 350V) /dt Peak Diode , diode reverse recovery. Eoff 4000 3000 Eon 2000 = 400V I = 77A D T = 125°C J L , APT77N60JC3 0.035 600V 77A Super Junction MOSFET S S C OLMOS O 27 2 T- D , Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) V/ns Amps IAR Repetitive Avalanche Microsemi
Original
Abstract: TYP dv 1 3 dv 77 (Body Diode) 231 (VGS = 0V, IS = -77A) 1 UNIT Amps , DD I = 77A Eoff T = 125°C J L = 100μH 5000 EON includes diode reverse recovery , APT77N60BC6 APT77N60SC6 600V C OLMOS O 77A 0.041 Super Junction MOSFET Power , 144 18 INDUCTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 25°C RG = 5.0 27 110 165 8 INDUCTIVE SWITCHING @ 25° C VDD = 400V, VGS = 15V ID = 77A, RG = 5 5 UNIT 290 Microsemi
Original
APT77N60B
Abstract: SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 77A, RG = 5 3100 SOURCE-DRAIN DIODE RATINGS AND , (Body Diode) 3 (VGS = 0V, IS = -77A) 1 UNIT Amps 1.2 Volts 15 V/ns /dt Peak Diode Recovery /dt t rr Reverse Recovery Time (IS = -77A, di/dt = 100A/s) Tj = 25 , APT77N60BC6 APT77N60SC6 600V C OLMOS O 77A 0.041 Super Junction MOSFET Power , INDUCTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 25°C RG = 5.0 5 UNIT 290 VGS = 10V VDD = Microsemi
Original
Abstract: integral reverse 1.3 p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e Conditions MOSFET , °C, ID = 1mA mâ"¦ VGS = 10V, ID = 7.7A e VGS(th) Gate Threshold Voltage 2.0 â'"â'"â'" 4.0 , VGS = -20V S VDS = 25V, ID = 7.7A nC VGS = 10V â'"â'"â'" Qgs2 VDS = 55V, VGS = 0V , Gate-to-Drain Charge â'"â'"â'" 3.5 â'"â'"â'" ID = 7.7A Qgodr â'"â'"â'" 3.0 â'"â'"â , Inductance â'"â'"â'" 7.5 â'"â'"â'" â"¦ VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5â International Rectifier
Original
Abstract: p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed , Conditions VGS = 0V, ID = 250uA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 7.7A e VGS(th , 25uA S VDS = 25V, ID = 7.7A nC VGS = 10V Total Gate Charge ­­­ 8.9 13 Qgs1 , 0.77 ­­­ Qgd Gate-to-Drain Charge ­­­ 3.5 ­­­ ID = 7.7A Qgodr ­­­ 3.0 , Inductance ­­­ 7.5 ­­­ VDS = 44V VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5 VGS International Rectifier
Original
audio mosfet class d amplifier
Abstract: Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max Units 30 V 2 VGS=4.5V, I D=4A VDS=5V, ID=7.7A Forward Transconductance IS=1A Diode Forward Voltage Maximum Body-Diode Continuous , other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related , p-channel -30V VDS (V) = 30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m (VGS Alpha & Omega Semiconductor
Original
AOP610 AOP610L 0E-06
Abstract: Diode) Pulsed Source Current 1 Diode Forward Voltage Reverse Recovery Time (IS = -77A, dl S/dt = 100A/us) Peak Diode Recovery dv/ 4 dt Reverse Recovery Charge (IS = -77A, dlS/dt = 100A/us) L A , APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S , 600 .030 1.0 0.035 50 500 ±200 2.1 3 3.9 (VGS = 10V, ID = 77A) Ohms uA nA Volts Zero Gate , 3 AP77N60JC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 380V ID = 77A @ 25 Advanced Power Technology
Original
MIL-STD-750
Abstract: D=77A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC , Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot , ID =77A, VDD =25V, RGS =25 kV/us IS =77A, VDS =44V, di/dt=200A/us, Tjmax=175°C TC , Turn-on delay time td(on) V DD=30V, V GS=10V, - 14 20 Rise time tr ID=77A, - , 39 V DD=44V, I D=77A - 9 12 - 18 28 - 45 60 V(plateau) V DD=44V, I D=77A Infineon Technologies
Original
SPP77N06S2-12 SPB77N06S2-12 BSPP77N06S2-12 2n0612 smd diode 77a S6030 Q67060-S6029 2N0612 Q67060-S6030
Abstract: VGS = 0V 2065 VDD = 333V, VGS = 15V ID = 77A, RG = 5â"¦ 3830 SOURCE-DRAIN DIODE RATINGS , 30 50 = 333V = 77A T = 125°C J 20,000 L = 100ÂuH EON includes Eoff diode , APT50M60L2VR 0.060â"¦ 500V 77A POWER MOS V® MOSFET TO-264 Max Power MOS V® is a new , Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 77A @ 25°C td(off) tf 25 VDD = 250V ID = 77A @ 25°C Turn-off Delay Time Eon Turn-on Advanced Power Technology
Original
Abstract: =1.4, RGEN=3 40.5 ns 10 ns IF=7.7A, dI/dt=100A/us 18.8 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/us 8.1 ns nC Body Diode Reverse Recovery Time A: The value of R , 10 VGS=4.5V, ID=7.7A Units uA uA V 0.73 1 V A 11 14 18 16 21 , On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS 25 VDS=5V, ID=7.7A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Alpha & Omega Semiconductor
Original
AON5810 AON5810L 0E-04 0E-05
Showing first 20 results.