500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
TPS51123RGER Texas Instruments Dual-Synch Step-Down Controller w/Out-of-Audio Operation 100mA LDO f/Notebook Sys Pwr 24-VQFN -40 to 85 pdf Buy
TPS51123RGET Texas Instruments Dual-Synch Step-Down Controller w/Out-of-Audio Operation 100mA LDO f/Notebook Sys Pwr 24-VQFN -40 to 85 pdf Buy Buy
TRF1123IRTMTG3 Texas Instruments Power Amplifier Driver 32-VQFN -40 to 85 pdf Buy

diode 1123

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Application Note AN-1123 Bootstrap Network Analysis: Focusing on the Integrated Bootstrap , . www.irf.com AN-1123 1 1. Introduction One of the most widely used methods to supply power to the , consists of a bootstrap diode and a bootstrap capacitor; this circuit is illustrated in Figure 1. bootstrap diode bootstrap resistor DC+ R VCC boot VF VB VBS bootstrap capacitor , bootstrap diode, the drop across the low-side switch (VCEON or VFP, depending on the direction of current ... International Rectifier
Original
datasheet

21 pages,
769.37 Kb

pwm20 IRS2136D irf AN-1123 diode 1123 AN-1123 IR2136 IR2136 application note bootstrap diode 3 phase inverter ic ir2136 TEXT
datasheet frame
Abstract: 1N2985B 1N2985B Zener Voltage Regulator Diode 11.23 Diodes Reference/Regulator Diodes Gen. Page 1 of 1 , Part Number: 1N2985B 1N2985B 1N2985B 1N2985B Zener Voltage Regulator Diode Enter code INTER3 at checkout , Available from $ 11.23 Manufacturer Partnumber: List Price: Our Price: You Save: 1N2985B 1N2985B $ 14.03 Information Spec Sheets Tutorials Shipping FAQs $ 11.23 $ 2.80 Company Testimonials Store Policies Contact Us Americanmicrosemi Total Price $ 11.23 Quantity to Order: 1 SHOP WITH ... American Microsemiconductor
Original
datasheet

1 pages,
158.3 Kb

1N2985B TEXT
datasheet frame
Abstract: 1N3000B 1N3000B Zener Voltage Regulator Diode 11.23 Diodes Reference/Regulator Diodes Gen. Page 1 of 1 , Part Number: 1N3000B 1N3000B 1N3000B 1N3000B Zener Voltage Regulator Diode Enter code INTER3 at checkout , Stock 142 Brand New Available from $ 11.23 Manufacturer Partnumber: List Price: Our Price: You Save: 1N3000B 1N3000B $ 14.04 Information Spec Sheets Tutorials Shipping FAQs $ 11.23 $ 2.81 Company Testimonials Store Policies Contact Us Americanmicrosemi Total Price $ 11.23 Quantity to Order ... American Microsemiconductor
Original
datasheet

1 pages,
159.58 Kb

1N3000B TEXT
datasheet frame
Abstract: CHENMKO ENTERPRISE CO.,LTD CH521G4-30GP CH521G4-30GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere FEATURE * Extremely small surface mounting type. (FBPD-1123) * Io=200mA guaranteed despite size FBPD-1123 CONSTRUCTION * Silicon epitaxial planar 0.57±0.05 0.19±0.03 0.6±0.05 0.38±0.03 0~0.03 0.3±0.05 CIRCUIT 0.27±0.03 0.3±0.03 (2) Dimensions in millimeters (1) FBPD-1123 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL ... Chenmko Enterprise
Original
datasheet

1 pages,
79.08 Kb

CH521G4-30GP TEXT
datasheet frame
Abstract: NSD16F3T5G NSD16F3T5G Switching Diode The NSD16F3T5G NSD16F3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOT−1123 surface mount , +150 °C Rating Peak Forward Surge Current 3 1 SOT−1123 CASE 524AA 524AA STYLE 2 , Device NSD16F3T5G NSD16F3T5G Package Shipping† SOT−1123 8000/Tape & Reel (Pb−Free) †For , Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF mV Diode ... ON Semiconductor
Original
datasheet

4 pages,
92.3 Kb

NSD16F3T5G TEXT
datasheet frame
Abstract: NSD914F3T5G NSD914F3T5G High-Speed Switching Diode The NSD914F3T5G NSD914F3T5G device is a spin−off of our popular , the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications , TJ, Tstg −55 to +150 Peak Forward Surge Current 1 2 SOT−1123 CASE 524AA 524AA STYLE 2 , MARKING DIAGRAM NSD914F3T5G NSD914F3T5G Package Shipping† SOT−1123 8000/Tape & Reel (Pb−Free , Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz ... ON Semiconductor
Original
datasheet

4 pages,
97.17 Kb

NSD914F3T5G TEXT
datasheet frame
Abstract: NSD914F3T5G NSD914F3T5G High-Speed Switching Diode The NSD914F3T5G NSD914F3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for high speed switching applications and is housed in the SOT-1123 , Peak Forward Surge Current 1 2 SOT-1123 CASE 524AA 524AA STYLE 2 THERMAL CHARACTERISTICS , Device Code = Date Code ORDERING INFORMATION Device NSD914F3T5G NSD914F3T5G Package Shipping SOT-1123 , ) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 ... ON Semiconductor
Original
datasheet

4 pages,
108.74 Kb

sot1123 SOT-1123 NSD914F3T5G diode 1123 TEXT
datasheet frame
Abstract: NSD16F3T5G NSD16F3T5G Switching Diode The NSD16F3T5G NSD16F3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOT−1123 surface mount , TJ, Tstg −55 to +150 Peak Forward Surge Current 3 1 SOT−1123 CASE 524AA 524AA STYLE 2 , traces. 2. 500 mm2 1 oz, copper traces. 2 Package Shipping† SOT−1123 8000/Tape & Reel , = 150 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF ... ON Semiconductor
Original
datasheet

4 pages,
47.06 Kb

NSD16F3T5G TEXT
datasheet frame
Abstract: NSD16F3T5G NSD16F3T5G Switching Diode The NSD16F3T5G NSD16F3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for switching applications and is housed in the SOT-1123 surface mount , SOT-1123 CASE 524AA 524AA STYLE 2 THERMAL CHARACTERISTICS Characteristic Junction and Storage , , LLC, 2009 2 1 Device NSD16F3T5G NSD16F3T5G Package Shipping SOT-1123 8000/Tape & Reel , mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 2.0 pF Forward Recovery Voltage ... ON Semiconductor
Original
datasheet

4 pages,
104.12 Kb

NSD16F3T5G diode 1123 524AA-01 TEXT
datasheet frame
Abstract: 5bE T> m TllDöSb [1040035 Til ■ PHIN BZW14 BZW14 PHILIPS INTERNATIONAL 5bE Dl —marntmamN T-U-Z3 TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically , board; Cu-thickness > 40 jum; Fig. 2 (see "Thermal model") Vr 'F(AV) 'rsm Tstg "'"amb T-11-23 max , Transient suppressor diode IPHIN PHILIPS INTERNATIONAL SbE CHARACTERISTICS Tamb = -25 to+85 °C Forward , ) Reverse current VR = 12 V BZW14 BZW14 vF < V(CL)R < |R < T-11-23 1,3 V 28 V 40 M Fig. 4 Peak reverse ... OCR Scan
datasheet

3 pages,
47.45 Kb

diode 1123 BZW14 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/72805971-145293ZC/bb914.zip ()
Infineon 08/09/2000 24.04 Kb ZIP bb914.zip
No abstract text available
/download/76965290-777420ZC/bb914.zip ()
Spice Models 29/07/2012 24.32 Kb ZIP bb914.zip
No abstract text available
/download/3601730-145174ZC/bar63_~2.zip ()
Infineon 08/09/2000 13.08 Kb ZIP bar63_~2.zip
No abstract text available
/download/96748787-145191ZC/bar80w.zip ()
Infineon 08/09/2000 45.44 Kb ZIP bar80w.zip
# GHz S MA R 50 ! 7 Jul 1993 / 12:22:06 !BB619 BB619, Si Varicap Diode in SOD123 [BD5V0u00] ! VR= 5.00 V !f GHZ S11 ! MAG ANG .080 .99482 -47.9 .090 .99363 -53.3 .100 .99267 -58.4 .110 .99188 -63.3 .120 .99109 -68.0 .150 .98911 -81.0 .200 .98464 -99.1 .250 2.600 .96909 116.7 2.800 .97073 112.3 3.000 .97115 108.1 ! ! SIEMENS AG
/datasheets/files/siemens/ehdata/spar/bb619/bd5v0u00.s1p
Siemens 07/07/1993 1.08 Kb S1P bd5v0u00.s1p
# GHz S MA R 50 ! 9 Jul 1993 / 14:59:01 !BB640 BB640, Si Varicap Diode in SOD323 [bs16Vu00] ! VR= 16.00 V !f GHZ S11 ! MAG ANG .080 .99779 -23.2 .090 .99710 -26.0 .100 .99648 -28.8 .110 .99597 -31.6 .120 .99537 -34.4 .150 .99356 -42.5 .200 .98945 -55.2 .250 .500 .96613 -112.3 .600 .96102 -125.2 .700 .95772 -136.1 .800 .95524 -145.5 .900
/datasheets/files/siemens/ehdata/spar/bb640/bs16vu00.s1p
Siemens 13/07/1993 1.08 Kb S1P bs16vu00.s1p
! SIEMENS Small Signal Semiconductors ! BB804 BB804 ! Si Tuning Diode in SOT23 ! VR = 2 V ! S-Parameters: July 1993 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.080 0.9955 -99.4 0.090 0.9950 -106.3 0.100 0.9944 -112.3 0.110 0.9940 -117.6 0.120 0.9936 -122.3 0.150 0.9928 -133.6 0.200 0.9917 -146.3 0.250 0.9910 -154.9 0.300 0.9903 -161.2 0.350 0.9898 -166.1 0.400 0.9896
/datasheets/files/infineon/ehdata/spar/bb804/b42v0u00.s1p
Infineon 17/02/1996 1.03 Kb S1P b42v0u00.s1p
! SIEMENS Small Signal Semiconductors ! BAR63-03W BAR63-03W ! Si PIN Diode in SOD323 ! IF = 3 mA ! S-Parameters: December 1995 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.94861 179.9 0.100 0.94983 177.7 0.150 0.95354 176.6 0.200 0.95170 175.1 0.250 0.95191 173.8 0.300 0.95212 119.6 2.800 0.95656 115.8 3.000 0.95959 112.3 3.500 0.95688 103.8 4.000 0.96436
/datasheets/files/infineon/ehdata/spar/bar63_3w/psv003m0.s1p
Infineon 06/09/1997 1.13 Kb S1P psv003m0.s1p
! SIEMENS Small Signal Semiconductors ! BB620 BB620 ! Si Tuning Diode in SOD123 ! VR = 3.5 V ! S-Parameters: July 1993 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.080 0.9750 -92.4 0.090 0.9723 -99.5 0.100 0.9699 -105.8 0.110 0.9680 -111.3 0.120 0.9665 -116.3 0.150 0.9630 -128.6 0.200 2.200 0.9560 121.6 2.400 0.9557 116.8 2.600 0.9559 112.3 2.800 0.9582 108.3 3.000
/datasheets/files/infineon/ehdata/spar/bb620/bg3v5u00.s1p
Infineon 17/02/1996 1.04 Kb S1P bg3v5u00.s1p
! SIEMENS Small Signal Semiconductors ! BB833 BB833 ! Si Tuning Diode in SOD323 ! VR = 13 V ! S-Parameters: April 1996 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.010 0.99936 -0.4 0.020 0.99955 -0.8 0.030 0.99968 -1.2 0.050 0.99988 -2.0 0.100 0.99986 -4.1 0.150 0.99987 -85.3 2.200 0.97188 -94.2 2.400 0.96547 -103.2 2.600 0.96139 -112.3 2.800 0.95942
/datasheets/files/infineon/ehdata/spar/bb833/bu13v0u0.s1p
Infineon 28/10/1997 1.05 Kb S1P bu13v0u0.s1p