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digital audio mosfet

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PD - 96918A IRFB4212PbF DIGITAL AUDIO MOSFET Features · Key parameters optimized for Class-D audio Key Parameters · Low RDSON for improved efficiency · Low QG and QSW for better THD , -220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio International Rectifier
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IRF1010 ClassD Amplifier 100v 150w mosfet audio amplifier IRFB4212P
Abstract: PD - 96909 IRFB4103PbF DIGITAL AUDIO MOSFET Features · Key parameters optimized for Class-D audio amplifier applications · Low RDSON for improved efficiency · Low QG and QSW for better THD and , half-bridge topology G S TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to , internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as International Rectifier
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audio mosfet PN channel MOSFET 10A POWER MOSFET Rise Time GS 069 IRFB4103P
Abstract: PD - 97074A DIGITAL AUDIO MOSFET Key Parameters h Features , Description D1, D2 S1, S2 Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches , Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for , optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These International Rectifier
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IRFI4019H-117P pcb 200W audio amplifier 12v 200W AUDIO AMPLIFIER 200w power amplifier PCB layout class d 200w 200w AUDIO AMPLIFIER
Abstract: PD - 97170 DIGITAL AUDIO MOSFET IRFH4020PbF Key Parameters g Features , ) 5& D1 G1 S1/D2 G2 ) S2 TO-220 Full-Pak 5 PIN 5 Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low , optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for International Rectifier
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IRFH4020P
Abstract: DIGITAL AUDIO MOSFET Features IRFI4019H-117PbF Key Parameters h 150 80 13 4.1 2.5 150 V m: nC , TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to , Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON International Rectifier
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Abstract: PD - 97252 DIGITAL AUDIO MOSFET IRFI4020H-117P Key Parameters g Features , Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest , optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for , reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier International Rectifier
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IRFI4020 12v 300w audio amplifier circuit class d amplifier
Abstract: PD - 97249A DIGITAL AUDIO MOSFET IRFI4212H-117P Features         , D1, D2 Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge , Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved , audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this International Rectifier
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Abstract: PD - 97252 DIGITAL AUDIO MOSFET IRFI4020H-117P Key Parameters g Features     , , D2 S1, S2 Gate Drain Source Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches , better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for , optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These International Rectifier
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Abstract: PD - 97254 DIGITAL AUDIO MOSFET IRFI4024H-117P Key Parameters g Features , -220 Full-Pak 5 PIN G1, G2 Description D1, D2 S1, S2 Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low , optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for International Rectifier
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100w audio amplifier 77A MARKING
Abstract: PD - 97249A DIGITAL AUDIO MOSFET IRFI4212H-117P Features Integrated , Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest , for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for , reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier International Rectifier
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IRFI4212 150w CLASS D audio amplifier 90v d class audio amplifier irfi4212h
Abstract: PD - 97170 DIGITAL AUDIO MOSFET IRFH4020PbF Key Parameters g Features , ) 5& D1 G1 S1/D2 G2 ) S2 TO-220 Full-Pak 5 PIN 5 Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low , optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for International Rectifier
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IRFH4020PBF
Abstract: PD - 97252 DIGITAL AUDIO MOSFET IRFI4020H-117P Key Parameters g Features , Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest , optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for , reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier International Rectifier
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Abstract: PD - 97249A DIGITAL AUDIO MOSFET IRFI4212H-117P Features Integrated , Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest , for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for , reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier International Rectifier
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BE 66a
Abstract: PD - 97074A IRFI4019H-117P DIGITAL AUDIO MOSFET Key Parameters h Features    , Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used , Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON , , and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors International Rectifier
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Abstract: PD - 97074A DIGITAL AUDIO MOSFET Key Parameters h Features , Description D1, D2 S1, S2 Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches , Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for , optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These International Rectifier
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Abstract: PD - 97254 DIGITAL AUDIO MOSFET IRFI4024H-117P Key Parameters g Features     , , S2 Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge , better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for , audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this International Rectifier
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Abstract: Digital Audio MOSFET Driver IC Input Voltage Device Channels min 1.8 4 (V) Package , Linear PWM Digital (4-bit) PWM Frequency Package Demoboard 14-Lead SOIC (NG) HV7100DB1 Supertex
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HV892 HV895 AN-H61 MD7120 HV7800 HV7801 MOSFET SOT-23 HV9901 HV7802
Abstract: PD - 97254 DIGITAL AUDIO MOSFET IRFI4024H-117P Key Parameters g Features , -220 Full-Pak 5 PIN G1, G2 Description D1, D2 S1, S2 Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low , optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for International Rectifier
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Abstract: International Rectifier Digital Audio MOSFET .13 Conclusions , MOSFET. IR Digital Audio MOSFETs are devices specifically designed for class D audio amplifier , Figure 12. Example of IR Digital Audio MOSFET die size selection. Furthermore, IR Digital Audio MOSFETs , Application Note AN-1070 Class D Audio Amplifier Performance Relationship to MOSFET Parameters , .2 Key MOSFET Electrical Parameters in Class D Audio Amplifiers .2 Drain Source International Rectifier
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all mosfet power amplifier AUDIO MOSFET POWER AMPLIFIER CIRCUIT MOSFET IGBT THEORY AND APPLICATIONS MOSFET QG mosfet power amplifier class D class a mosfet power amplifier
Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features ï'·ï'  Latest MOSFET silicon technology ï'·ï'  Key parameters optimized for Class-D audio amplifier applications ï'·ï'  Low RDS(on) for , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier International Rectifier
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IRF6641TRP IRF6641P
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