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Part Manufacturer Description PDF & SAMPLES
219-2-0-SW-7-9-77 Airpax CIR BRKR MAG-HYDR 77A 600VAC
219-3-1-65-7-9-77 Airpax CIR BRKR MAG-HYDR 77A 600VAC
VVZB120-12IO2 IXYS Corporation Silicon Controlled Rectifier, 77A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 3 Element, MODULE-11
BTN8980TAAUMA1 Infineon Technologies AG Half Bridge Based Peripheral Driver, 77A, MOS, PSSO7, GREEN, PLASTIC, TO-263, 7 PIN
BTN7970BAUMA1 Infineon Technologies AG Half Bridge Based Peripheral Driver, 77A, MOS, PSSO7, GREEN, PLASTIC, TO-263, 7 PIN
IPP77N06S212AKSA2 Infineon Technologies AG MOSFET N-CH 55V 77A TO220-3

ce 77a

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: OE â  m m x/m x m i w / i x/m x/m \ CE /77A I 77A /fifa /77A I 77A M p â'" tÃLC , Enable Chip Enable (CE) Description Data Input/Output The Chip Enable input must be LOW to enable all read/write operations. When CE is HIGH, power con­ sumption is reduced. CE Chip , 6612 PGM T01 FUNCTIONAL DIAGRAM A0-A3 ADDRESS INPUTS CE OE wl 6612FH D F01 3 -2 , . Read Read operations are initiated by both OE and CE LOW and WE HIGH. The read operation is -
OCR Scan
X2804C 0D0455
Abstract: 0 C I/O-, d 9 10 11 12 i/o2 d vs s ^ H I CE ! i/o 7 = ]i/o 6 = h /o 5 ZD i/o4 a 1 1 /0 , inputs select an 8 -bit memory location during a read or write operation. Chip Enable (CE) The Chip Enable input must be LOW to enable all read/write operations. When CE is HIGH, power con sumption is , initiate read operations. PIN NAMES Symbol A 0- A 10 I/O 0-I/O 7 WE CE OE V cc Vss NC Description Address , FUNCTIONAL DIAGRAM A0-A 10 ADDRESS INPUTS CE OE WE VCC VSS 3 8 52 F H D F01 3-14 X2816C -
OCR Scan
x2816 x2816c-20 x2816c-90
Abstract: HIGH 2 3852 FHD F06 Page Mode W rite Cycle mu \uu m j mu w \ CE /77A *WP V ADDR , operation. A0-A10 I/O0-I/O7 WE CE OE Vcc Vss NC Address Inputs Data Input/Output Write Enable Chip Enable Output Enable +5V Ground No Connect Chip Enable (CE) The Chip Enable input must be LOW to enable all read/write operations. When CE is HIGH, power con­ sumption is reduced. Output , initiated by both OE and CE LOW and WE HIGH. The read operation .is terminated by either CE or OE -
OCR Scan
D004S G0D457 D4S71
Abstract: 5096 FHD F07 Figure 6. Page Mode Write Cycle OE 77777 \ CE 77A 777X 7 7 A ,/7 A , a13 â¡ As 3 Ag â¡ An H OE 3 A10 â¡ CE â¡ I/O7 n i/oe 3 I/O5 â¡ I/O 4 â¡ I/O3 AÃ , 7 AÃ Ag An NC ÃI A10 â¡ CE 22 â¡ I/O7 21 â¡ i/Oe 28 27 26 25 24 23 Address , 3=1 CE 3=1 I/O7 3 = 3 i/oe 3=1 I/O5 3=1 I/O4 3 = 1 I/O3 3=1 GND 3=] 1/02 3=1 I/O1 3=3 l/Oo , -883, Test Method 3015 100 mA JEDEC Standard 17 MODE SELECTION Mode CE WE Read L -
OCR Scan
CAT28LV256 256K-B CAT28LV256HNI-25TE7
Abstract: WP \ S v in \ llu \éw v jjj \ llu w r - (BLC "| CE \ /77A /77A Í71ÍA ÍT7A Í77A /XÍP , OE : ï io A2 i 23C.-.I A 10 A1 r . j i i 22C."1 CE Aq I f : : : j i 2 l/O j W)0 15 16 17 18 19 20 , inputs select an 8-bit memory location during a read or write operation. Chip Enable (CE) The Chip Enable , . PGA I/Of. I/O, l/Oo |/Ot l/Os PIN NAMES Symbol A0- A 16 l/O0- I/O 7 WE CE OE V CC V SS NC , 3058 PGM T01 © -
OCR Scan
lk 3058 X28C010
Abstract: , Power Dissipation. 600 mW 0JA Thermal Im p ed an ce .77°C/W Lead Temperature, Soldering Vapor Phase (60 se c -
OCR Scan
ad513 ADG511/ADG512/ADG513 AD7840/8 AD7870/1/2/4/5/6/8 ADG511 ADG512 ADG513
Abstract: 3873 FHD F05 Page Write Cycle OE mm \ /TIA \ \ / ^W P H tw p CE /77A tB LC - w r , -bit memory location during a read or write operation. Chip Enable (CE) The Chip Enable input must be LOW to enable all read/ write operations. When CE is HIGH, powerconsumption is reduced (see Note 4). Output , A o-A-18 l/Oo-l/Os We CE OE Vcc Vss NC Description Address Inputs Data Input/Output Write Enable , Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE or -
OCR Scan
XM28C040 MIL-STD-883
Abstract: \uu \im vu/ vm w tW p mr u in 3 LAST BYTE BYTE n+2 CE \ /77A Í7 7 A /TUA ÍT T A Í7T A /Xff , /O 1 C L I/O 2 C L NC C L V s s t= 3 N c a 1/ 0 3 C 3 I/O 4 C 3 I/O 5 C H i/o 6 c = e I/O 7 C 3 ce t , . Chip Enable (CE) The Chip Enable input must be LOW to enable all read/ write operations. When CE is , writing of data to the X28VC256. PIN NAMES Symbol A0- A 14 I/O0 -I/O 7 WE CE OE Vcc Vss NC PIN , Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE or -
OCR Scan
Abstract: - HIGH Z Page W rite Cycle OE mm \ 'W P ' - - *BLC " r w r CE /77A ÍTTA /7 lfa , inputs select an 8-bit memory location during a read or write operation. Chip Enable (CE) The Chip Enable input must be LOW to enable all read/ write operations. When CE is HIGH, power consumption is reduced , Z 15 16 17 = 11/03 3873 FHD F02 PIN NAMES Symbol A 0- A 18 l/Oo-l/Os WÊ CE OE Vcc Vss NC , CE LOW. The read operation is terminated by either CE or OE returning HIGH. This 2-line control -
OCR Scan
MIL-STD883
Abstract: 0jA Thermal Im p ed an ce. 77°C/W , Lead , . + 1 5 0 °C Plastic D IP Package 0ja, Therm al Im p ed an ce , °C T S S O P Package 0JA, Therm al Im p ed an ce -
OCR Scan
ADG608/ADG609 ADG608 ADG609 R-16A
Abstract: ®‰å¨ã«æ­£ã—くãä½¿ã"ã"ãã ããã'ã« ï¼ã¤ã¥ãï¼‰ 電池につã"ての安å¨ä¸ã®ã"注æ" 液漏ã'Œ ç ´è£' ç Sharp
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XG-PH70X XG-PH70X-N
Abstract: ®‰å¨ã«æ­£ã—くãä½¿ã"ã"ãã ããã'ã« ï¼ã¤ã¥ãï¼‰ 電池につã"ての安å¨ä¸ã®ã"注æ" 液漏ã'Œ ç ´è£' ç Sharp
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XG-PH50X XG-PH50X-N
Abstract: 10 B 4 3 5 12 24 46 1.0 0.1 132 , 0 .9 5 ·£ 0 .7 5 « > 0 .6 3 " 77A Option without insulating material protection (77A/B.) :i 3 -L-9 2 O rd e rin g C ode In d u ctan ce L (u H | Tol. % C , COILS ELECTRONIC COMPONENTS LSSC, 77A, 5QA SERIES LSSC Option without insulating material , Freq. (M H z ) d z (m m ) Approvals O rd e rin g Code In d u cta n ce L ln H , ce HnH) Tol. % C u rr e n t (A) R e sis ta n c e (m Q) T e st Freq. (M H z ) Approval -
OCR Scan
50A33 10X26
Abstract: DIAGRAM NE 51 WE An Ai2 Al3 CE â  XT AO Y0 A1 Y1 Y? a2 y3 Y4 y5 6 y6 4 5 y7 AUTOSTORE RE ÃE WE CÃ' NE Ã"Ã' WE CE NE 5E WE ci NE OÃ WÃ' CÃ' Ao-Ato Nr- RE SE WÃ' CÃ' _ AO-A10 I/O A0-A10 I/O NE A0-A10 OE WE CÃ' I/O NE A0-A10 OE WE CE I/O NE A0-A10 OE WE CE I/O _ , read and write operations. Chip Enable (CE) The chip enable input must be LOW to enable all read , controls the data output butters. It a hardware nonvolatile operation is selected (NE = CE = LOW) and WE -
OCR Scan
XM20C128S X20C16 7777/7A
Abstract: : Constant Power Discharge Characteristics at 25°C/77°F for BP5-12 D i s c h a r g e T im e 5 m in F , 3 .0 2 6933bb05.tbl At Left: Constant Power Discharge Characteristics at 25°C/77°F for BP7 , Characteristics at 25°C/77°F for BP12-12 D is c h a r g e T im e 5 m in F in a l V o lt a g e 1 0 m , 6933bb12.tbl At Left: Constant Power Discharge Characteristics at 25°C/77°F for BP26-12 D is c h a r , of 8 B&B Battery BP5-12 Battery Discharge Characteristics (25°C/77°F) BP05dis.tif BP7 Gamewell-FCI
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MH19884 MH20727 MH20845 BAT-1270 BAT-12120 BAT-12180
Abstract: x â'" 2AAA J X â'˜s t o â'" 555 7/ â * s p CE WE NE Uh 77A /77A , (CE) The chip enable input must be LOW to enable all read, write and user requested nonvolatile , hardware nonvolatile operation is selected (NE = CE = LOW) and OE strobes LOW a recall operation will be , l _ 8 21 A ,[= 9 20 m 19 A 10 HI CE Aq I = 10 OE LOWwill always disable a STORE operation regard­ less of the state of NE, WE, and CE so long as the internal transfer -
OCR Scan
XM20C64
Abstract: APT50M60L2VFR 500V 77A 0.060 POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new , ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 250V Turn-off Delay Time tf ID = 77A @ 25°C RG = 0.6 Turn-on Switching Energy Eoff Turn-off Switching Energy 6 Eon ID = 77A, RG = 5 Turn-on Switching Energy Eoff VDD = 333V, VGS = 15V , MIN VDD = 333V, VGS = 15V ID = 77A, RG = 5 uJ 3830 SOURCE-DRAIN DIODE RATINGS AND Advanced Power Technology
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APT60DF60 77A DIODE diode 77a TJ125
Abstract: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , (VDS = 480V, ID = 77A, TJ = 125°C) 50 V/ns Amps IAR Repetitive Avalanche Current 7 , Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 77A @ 25°C tf 110 , 1670 VDD = 400V, VGS = 15V ID = 77A, RG = 5 2880 INDUCTIVE SWITCHING @ 125°C 6 nC 27 VDD = 380V ID = 77A @ 125°C Fall Time 640 18 VGS = 10V Turn-off Delay Time pF Microsemi
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APT30DF60
Abstract: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , " from Case for 10 Sec. 300 Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) 50 , Delay Time tr ID = 77A @ 25°C tf 110 Turn-on Switching Energy Eoff Turn-off , Switching Energy 6 165 8 RG = 0.9 Eon ns 12 1670 VDD = 400V, VGS = 15V ID = 77A, RG = 5 2880 INDUCTIVE SWITCHING @ 125°C 6 nC 27 VDD = 380V ID = 77A @ 125 Advanced Power Technology
Original
Abstract: cE O Collector-emltter Voltage (I b = 0 ) 45 60 80 100 V V ebo lc ICM Ib , PNP types voltage and current values are negative. December 1988 1/4 175- BD675/75A/77/77A , 2A V ce = 3V Small Signal Current Gain l c = 1.5A f= 1 M H z V c e = 3V HA mA V V V , /7 6 A /7 7 A /78 A /7 9 A /8 0 A lc = 2A V ce = 3V DC current Gain mA 2 V c e = half , Operating Areas. BD675/75A/77/ -
OCR Scan
BD675 BD675A BD677 BD677A BD679 BD679A
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