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TRANSISTOR BC 141

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Abstract: BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case (5 C 3 OIN 41873). , up to 1 A. The transistors BC 140 and BC 141 are available upon request as matched pairs. Type , -C719 BC 141-6 Q 62702-C 234 BC 141-10 Q62702-C235 BC 141-16 Q 62702-C236 Q 62702-C209 BC 141 paired BC 141 , Dimensions In mm BC 140 Vcbo ^CEO ^EBO k h Ti 7"stg Ptat 80 40 7 1 0.1 175 - 5 5 to +175 3.7 BC 141 100 , characteristics (Tarnb = 25 °C) The transistors BC 140 and BC 141 are grouped at I q = 100 mA and Vce - 1 V -
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62702-C228-S2 transistor BC 153 transistor C719 TRANSISTOR C236 transistor BC SERIES TRANSISTOR BC 140 TRANSISTOR BC140 0Q043 60203-X 60203-X140-V6 60203-X140-P 140/BC160
Abstract: BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case (5 C 3 OIN 41873). The , A. The transistors BC 140 and BC 141 are available upon request as matched pairs. Type Ordering , Q60203-X140-V16 BC 140 paired Q60203-X140-P BC 140/BC160 paired Q62702-C228-S2 BC 141 Q62702-C719 BC 141-6 Q62702-C234 BC 141-10 Q62702-C235 BC 141-16 Q62702-C236 BC 141 paired Q62702-C209 BC 141/BC161 paired , /W Static characteristics (Tamb = 25°C) The transistors BC 140 and BC 141 are grouped at /c = 100 -
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Q60203-X140 Q60203-X140-V6 Q60203-X140-V10 BC141 BCY41 BC transistor series transistor BC 310 transistor bc 103 0Q04104 BC1401 141/BC161
Abstract: NPN SILICON TRANSISTOR BC 140 TRANSISTOR NPN SILICIUM gQ >| Compl. of BC 160 and BC 161 - Switching and amplifier Commutation et amplification "CEO "21E i 40 V (60 V BC 140 BC 141 1 A 40 . , indications contraires! BC 140 BC 141 Collector-base voltage Tension coltectevr-base vcb0 80 100 V , 175 °C 76 - 07 1/6 307 BC 140, BC 141 STATIC CHARACTERISTICS t ,_-25°C (Unless otherwise statec , ° v(br)ces BC 140 80 \ BC 141 100 Collector-emitter breakdown voltage Tantion de claquage -
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Bc 140 transistor bc 187 npn transistor TRANSISTOR BC 187 transistor bc 102 on BC 187 TRANSISTOR on TRANSISTOR BC 187
Abstract: * | | | | | | | | | | | .SUBCKT OPA622X1 2 3 4 5 6 8 9 10 11 12 13 * X1 2 5 12 131 141 BC ; Biasing Circuit BC X2 4 5 10 12 13 111 121 131 141 DT ; Diamond Transistor DT X3 6 9 11 111 121 CB ; Current-Buffer CB X4 3 5 8 12 , NI NI 6 PI 6 *Diamond Transistor DT * .SUBCKT DT 4 5 10 12 13 111 121 131 141 * R23 23 4 , 131 131 12 12 Q122 131 141 122 5 Q123 141 131 12 12 Q124 141 141 5 5 * .ENDS BC .MODEL .MODEL , (Xyour.X1.141)=-4.2808 IN THE ROOT SIMULATION FILE. * ("Xyour" IS DEVICE NAME CALLED OUT IN THE ROOT FILE -
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transistor q33 r23 transistor C213 C210 C209 C208 2E-12 02E-12 0E-12 14E-12
Abstract: * | | | OUTPUT * | | | | POSITIVE POWER SUPPLY * | | | | | .SUBCKT OPA623X1 2 3 4 6 7 * X1 4 7 131 141 BC ; Biasing Circuit BC X2 2 3 4 7 111 121 131 141 DT ; Diamond Transistor DT X3 4 6 7 111 121 CB ; Current-Buffer CB * C202 2 0 2E-12 C206 6 0 2E-12 .ENDS OPA623X1 *Diamond Transistor DT * .SUBCKT , Q124 141 141 4 4 NI * .ENDS BC .MODEL .MODEL .MODEL .MODEL NI NPN PI PNP PIM PNP (VAF , (Xyour.X1.141)=-4.2893 IN THE ROOT SIMULATION FILE. * ("Xyour" IS THE DEVICE NAME CALLED OUT IN THE ROOT -
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transistor c202 transistor c206 Q124 Q121 C206 C202 1E-12
Abstract: 6 8 9 10 11 12 13 * X1 2 5 12 131 141 BC ; Biasing Circuit BC X2 4 5 10 12 13 111 125 131 141 DT ; Diamond Transistor DT X3 6 9 11 111 125 CB ; Current-Buffer CB X4 3 5 8 12 131 141 DB , * .SUBCKT BC 2 5 12 131 * E13 131 0 121 0 1 E14 141 0 124 0 1 * I121 121 124 0.1E-6 * R122 122 5 , 131 141 * Q61 64 131 12 12 PI Q62 63 141 5 5 NI Q63 63 63 12 12 PIJ 10 Q64 64 64 5 5 NIJ 10 , NIJ NIJ PIJ NIJ PIJ PIJ NIJ 6 6 4 4 *Diamond Transistor DT * .SUBCKT DT 4 5 10 12 -
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c124 npn TRANSISTOR BC 1366 transistor NPN C124 c124 transistor transistor c124 MJE 131 OPA622X2 100E3 10E-12 029E-12 017E-12 050E-12
Abstract: * | | | | POSITIVE POWER SUPPLY * | | | | | .SUBCKT OPA623X2 2 3 4 6 7 * X1 4 7 131 141 BC ; Biasing Circuit BC X2 2 3 4 7 111 123 131 141 DT ; Diamond Transistor DT X3 4 6 7 111 123 CB ; Current-Buffer CB , * *Diamond Transistor DT * .SUBCKT DT 2 3 4 7 111 123 131 141 * C39 39 0 0.6E-12 * Q21 24 131 7 7 PI Q22 23 141 4 4 NI Q23 23 23 7 7 PIJ 10 Q24 24 24 4 4 NIJ 10 Q25 29 23 7 7 PIJ 10 Q26 30 24 , * *Biasing Circuit BC * .SUBCKT BC 4 7 131 141 * E13 131 0 121 0 1 E14 141 0 124 0 1 * * I121 121 -
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C121 C203 C124 transistor PNP C124 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20
Abstract: -39 800 1 30 40 120 150 1 0.35 0.15 40 25 BC 139 BC 138 N TO-39 800 1 30 35 â'" 100 10 1.5 1 40 25 _ BC 139 P TO-39 700 0.5 40 40 â'" 100 10 0.8 0.3 â'" 6+ BC 119 BC 140 N TO-39 800 1 40 40 250.1 100 1 1 1 50 25 BC 160 BC 141 N TO-39 800 1 60 40 250* 100 1 1 1 50 25 BC 161 BC 142 N TO-39 800 1 60 20 _ 200 2 0.4 0.2 40 25 BC 143 BC 143 P TO-39 800 1 60 20 â'" 300 1 0.6 0.2 60 20 BC 142 BC 144 N TO-39 800 , P TO-39 800 1 60 40 250* 100 1 1 1 50 30 BC 141 BC 185 N TO-39 700 0.5 40 40 _ 100 10 0.45 0.3 200 -
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transistor bc 138 bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 185 BC119 BC211A BC313A MELF-00 MELF-002 MELF-005
Abstract: transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601' Q62702-C228 BC 160-6 Q62702-C228-V6 BC 160-10 Q62702-C228-V10 BC 160-16 Q62702-C228-V16 BC 160 paired Q62702-C228-P BC 160/BC140 paired Q62702-C228-S2 BC1611> Q62702-C252 BC 161-6 Q62702-C230 BC 161-10 , 2SC » â  Ã»23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The -
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BC181 TRANSISTOR BC 157 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 Q62702-C231 Q62702-C239 Q62702-C230-P BC161/BC141 Q62702-C230-S2 S20V-30V
Abstract: PNP SILICON TRANSISTOR TRANSISTOR PNP SILICIUM BC 160 BC 161 Compi, of BC 140 and BC 141 - Switching and amplifier Commutation et amplification i â'"40 V BC 160 VCEO I â'"60 V BC 161 "c -1 A , (Unless otherwise stated) VALEURS LIMITES ABSOLUES D'UTILISATION amb ISeufindicetionscontreiresl BC 160 BC 161 Collector-base voltage Tension coiiecteur-bese VCBO -40 -60 V Collector-emitter voltage , â ss® 76 - 07 1/6 313 BC 160, BC 161 STATIC CHARACTERISTICS J u=25°C (Unless otherwise stated -
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TRANSISTOR BC 313 BC 187 TRANSISTOR TRANSISTOR BC 187 pnp TRANSISTOR BC 5 on BC 187 TRANSISTOR- TR BC
Abstract: BC817/818 B C X 19/20 PMBTA06 BSS64 BC Y 87-89*1' DARLING TO NS BC517 BC617/618 M PSA13/14 MPSA25 2N6427 1 > double transistor * TO-71 +SO T143 BCV27/47 PM BTA13/14 Small-signal transistors PRO DUCT DATA: PAG ES 7-16 NPN surface-m ount SOT89 SOT223 SOT323 BC846W /847W PM SS3904 PMST6428/6429 BC , -39 TO-92 BC635 BC637 BC639 BC368 BC140/141 BFX85 BFY50-52 BSX45-47 2N1711 2N 1893 T O -126 BD135 BD 137 , M PS6534/6535 MPSA55/56 DARLING TO NS BC516 MPSA63/64 M PSA76/77 BSS68 1) double transistor t t SC70 -
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2PC1815 2PA1015 BD136 TRANSISTOR BD 338 transistor BC 56 TRANSISTOR BC 137 transistor BD 141 TRANSISTOR 328 SOT89 sc70 jc BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501
Abstract: IC 107 JC 108 -BC 109 BC107, BC 108, and BC 109 are epitaxial NPN silicon Planartransistors in , » Q62702-C680 BC 107 A Q60203-X107-A BC 107 B Q60203-X107-B BC 1081' Q60203-X108 BC108 A Q60203-X108-A BC 108 B Q60203-X108-B BC 108 C Q60203-X108-C BC 1091) 060203-X109 BC 109 B Q60203-X109-B BC 109 C , BC 107 BC 108 BC109 Collector-emitter voltage Vces 50 30 30 V Collector-emitter voltage Vceo 45 20 , order does not include any exact indication of the current amplification group desired, a transistor of -
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TRANSISTOR bc107 current gain BC107 characteristic transistor BC109 bc 104 npn transistor XL08 Transistor BC107 BC1071 Q60203-X109-C 10ZKH
Abstract: 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case (18 A 3 DIN 41876). The , input and driver stages. NPN Silicon Transistors Type B C 1 0 7 1) BC 107 A BC 107 B BC 1081) B C 108 A BC 108 B BC 108 C BC 1091> BC 109 B BC 109 C Ordering code Q62702-C680 Q60203-X107-A , Junction to case ftthJA flthJC Vces Vceo V'ebo B C 107 50 45 6 100 200 50 175 300 B C 108 BC 109 V -
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BC 108 transistor b 108 b BC 107 transistor NT 101 60203-X109
Abstract: /100 50 25 850 BC 141 800 60 40 250 (1) 100 1 1000/100 50 25 850 BC 160 800 40 40 250 (1) 100 1 , general purpose and fast switching transistor selector guide guide de sélection ^ transistors , 2N 2894 15 V 2N 914 2N 2368 2N 2369 20 V BC 108 IK BSfe:* 25 V BSX 51 BSX52 BC , 2222 A 2N 2906 2N 2907 2N 2218 A 2N 2219 A 2N 2904 2N 2905 BC 211 BSX 45 BC 313 BSV 15 45 V BC 107 BCY 59 BC 177 BCY 79 50 V BSX51 A BSX52 A BSW21 A BSW22 A 2N 16113(1) 2N 17111(1) 60 V BSX52 -
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BC 170c transistor TRANSISTOR BC 650 c A2N transistor transistor BSX 82 BC211 transistor transistor bc 170c BSY53 BSY54 2N706
Abstract: kept at ambient temperature at a distance of 2 mm from case Transistor under Test AF-VTVM Neg , distance of 2 mm from case BC 415,416 rthA 10 10 5 2 10 5 2 1 5 0.5 0.2 , current versus base emitter voltage -Vbe Common emitter collector characteristics BC 415,416 -VCE DC , 60 AO 20 BC 415,416 / 1.A lA r 1.2 1 , -l'ce Common emitter input characteristic HA 3 10 10' 10 0.5 BC 415,416 -1-1-1- -Vce-SV T . = -
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BC415 BC413 BC414 BC415 PNP TRANSISTOR TRANSISTOR BC 136 bc416 TRANSISTOR BC 416 b pnp TRANSISTOR BC 416 b BC416 E3C415
Abstract: NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: â'¢ In , .11 4A 10 20 30 40 us tn- 2662 A-ll 141 TELEFUNKEN ELECTRONIC 17E T> fl^SOQIb â'¢ Family of , the order number. Example: Order-No. of Type BC 238 C DU Code for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 â'¢I 06 Â«â  View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tape S) Additional -
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T0126 transistor BC 245 c transistor BC 245 FC4A TELEFUNKEN NPN transistor Electronic ballast to92 00DRS51 BES100 T-33-13 15A3DIN
Abstract: IC O N PLANAR NPN AUDIO DRIVER BC 115 The BC115 is a silicon planar epitaxial NPN transistor , IC O N PLANAR PNP GENERAL PURPOSE TRANSISTOR BC 116A The BC116A is a silicon planar epitaxial , (V) 1 0 '1 10-2 42 S IL IC O N PLANAR NPN GENERAL PURPOSE TRANSISTORS BC 140 BC 141 The B C140 and BC 141 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are , are the BC 160 and BC 161. ABSOLUTE MAXIMUM RATINGS ^CBO BC 140 60 V 40 V BC 141 80 V 60 V -
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APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 UPS APC rs 800 CIRCUIT diagram UPS APC rs 1000 CIRCUIT diagram APC Back ES 500 UPS circuit diagram AF106
Abstract: cl. 16 TO-39 750 40 100-250 100 1 1000/100 50 307 BC 141 cl .6 TO-39 750 60 40-100 100 1 1000/100 50 307 BC 141 cl.10 TO-39 750 60 60-160 100 1 1000/100 50 307 BC 141 cl.16 TO-39 750 60 100-250 100 1 , âºESM 4092 877 BU 141 TPu 75 BUX 55 TPu 75 âºESM 4093 877 BU 142 TPu 75 BUY 69 A, B, C TPu 75 , TPu 75 âº60 2222 A 903 BUX 21 TPu 75 ESM 141 TPu 75 âºSO 2369 903 BUX 22 TPu 75 ESM 142 TPu 75 , 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 *BC 107 B TO-18 300 45 240-500 2 0,95 100/5 -
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brochage des circuits integres LB 124 transistor equivalente equivalent of transistor bc212 bc 214 SESCOSEM transistor equivalente transistor BC 141 pj 929 diode picture 3154-S
Abstract: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features , #27;#21;#27;#27;#17; 1233#20;#17;19A1 433#27;1 #23;2B #26; 1 783#22;#22;BC #22; 5433 4" 'E5!()A0'"F"1'AF&//'D , "DF' C$-C!- #30; #20;#20;#21;#22; 1433#17;#21;#22;19A523#22;#21;#27;* 1=3 #26;#21;2 #30;#26;#21;#30; 783#26;#20;#22;BC #17;F#18;#19;#20; D , #17;1 #26;#20; .#21;8#29;: .#21;A8#29;: #20;#27; #26;#22; #30;#21;#22;1 #18; #26;#27; #26;#20;#22;BC 1433#30;1 #22; #17; #20;#22;BC #27; #27; #26; , "¦ : #27;#21;#22; #22;#27; #26;#20;#22;BC #17;#27; #26;#21;#27;>E#27;#26; #26;#21;#27;>E#27;#20; #26;#20;#22;BC #26;#21;#27;>E#27;#30; #20;#22;BC #26;#21;#27;>E#27;#17; #30;#27; #20;#22;BC #26;#21;#27; Alpha & Omega Semiconductor
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AO4604L 16789ABA2CDE9AFDC
Abstract: Typical Guaranteed 0° to 50°C -54° to +85°C 0.50C ± 0 002 (12.70; a 300 ±0.010 (7 62 ±0.25) DIA BC , 3.899 3.932 3.943 3.962 3.982 3.945 3.870 3.603 3.248 ANG -167 '15 0 -171 -176 174 167 154 141 129 115 , -54 -62 -70 -79 -89 -100 -111 -125 -141 MAG .431 .355 .108 .060 .026 .026 .036 .049 .063 .075 .087 , Resistance 0jc . 145°C/W Transistor Power Dissipation P d . -
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WJ-CA28 WJ-A28 transistor c375 transistor BC 171 transistor BC 176 transistor bc 248 A28/SMA28 SMA28 1-800-WJ1
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