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Part : TLP721F(D4-GB,M,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 532 Best Price : $2.91 Price Each : $3.56
Part : TLP721F(D4-GR,M,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 204 Best Price : $3.10 Price Each : $3.56
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TLP721F Datasheet

Part Manufacturer Description PDF Type
TLP721F Toshiba TOSHIBA Photocoupler Original
TLP721F Toshiba PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR Scan
TLP721F Toshiba Photocoupler Scan
TLP721FD4 Toshiba PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR Scan

TLP721F

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: VDE0884 OPTION : (D4) Types : TLP721, TLP721F Type designations for 'Option : (D4)', which are tested , Teil 1/01.89) 2 â'" Maximum Operating Insulation Voltage TLP721 vIORM 630 Vpk TLP721F 890 Input to , TLP721 Vpr 945 Vpk TLP721F 1335 Input to output Test Voltage, Method B Vpr=1.875XViORM> 100% Production Test tp=ls, Partial Discharge < 5pC TLP721 Vpr 1180 Vpk TLP721F 1670 Highest Permissible , ), TLP721F (D4, M) that previously has a white-resin mold and have been changed. When designing new products -
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VDE0110 IEC68 tlp721 photocoupler TLP721 gr marking d4 1335V 875XV
Abstract: : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP721, TLP721F Type designations for 'Option : (D4)\ which are , TLP721F 890 Input to output Test Voltage, Method A Vpr=1.5XViORM> Type and Sample Test tp = 60s, Partial Discharge < 5pC TLP721 Vpr 945 Vpk TLP721F 1335 Input to output Test Voltage, Method B Vpr=1.875XViORM> 100% Production Test tp= Is, Partial Discharge < 5pC TLP721 Vpr 1180 Vpk TLP721F 1670 Highest , TLP721 (D4, M), TLP721F (D4, M) that previously has a white-resin mold and have been changed. When -
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1012 TOSHIBA
Abstract: GaAs IRED & PHOTO-TRANSISTOR TLP721F (TLP721F) OFFICE MACHINE. U nit in mm SWITCHING POWER SUPPLY. The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic DIP package. All param eters are tested to the specification of TLP721. (both condition and limits) Collector-Emitter Voltage 55 V (Min.) C urrent Transfer Ratio Rank GB 50% (Min.) 100% (Min.) UL Recognized UL1577, File No.E67349 BSI -
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BS415 SS4330784 VDE0804 IEC65 VDE0860 IEC380
Abstract: : TLP721, TLP721F Type designations for ` Option : (D4) ' , which are tested under VDE0884 requirements. Ex , (7.62) (TLP721 type) Type 2 (10.16) (TLP721F type) Input to output Test Voltage, Method A Upr = , ) (TLP721F type) Input to output Test Voltage, Method B Upr=1.875XViORM> 100%Production Test tp = ls, Partial Discharge , 2/01.89 Group Dia) Type 2 (10.16) (TLP721Ftype) 8.0 mm 8.0 mm R * in accordance with DIN -
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p721f P721 p721f- p72-1f P721F P721K
Abstract: TO SHIBA TOSHIBA PHOTOCOUPLER TI_P721(D4)SERIES T L P 7 2 1 ( D 4 ) S E RI E S ATTACHMENT : SPECIFICATIONS FOR VDEQ884 OPTION : (D4) Types : TLP721, TLP721F Type designations for `Option : (D4)\ which are tested under VDE0884 requirements. Ex. : TLP721 (D4-GR-LF4) D4 GR LF4 : : : VDE0884 option CTR rank lead , Voltage 4 0 /1 0 0 /2 1 I'L rvS l TLP721F TLP721 Vpr TLP721F TLP721 Vpr TLP721F vtr - - v , refers to TLP721 (D4, M), TLP721F (D4, M) th a t previously has a white-resin mold and have been changed -
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TIP72
Abstract: option: (D4) Types: TLP721, TLP721F Type designations for ` option: (D4) ', which are tested under , Pollution degree (DIN VDE0110 teil 1 / 01.89) TLP721 Maximum operating insulation voltage TLP721F , tp = 1s, partial discharge < 5pC TLP721 VIORM Vpr TLP721F 630 890 945 Vpk Vpk 1335 Vpr TLP721F Highest permissible overvoltage (transient overvoltage, tpr = 10s , refers to TLP721 (D4, M), TLP721F (D4, M) that previously has a white-resin mold and have been changed Toshiba
Original
VDE0303 IEC112 DE MARKING
Abstract: TLP721F GaAs IRED S PHOTO-TRANSISTOR (TLP721F) OFFICE MACHINE. U nit in mm SWITCHING POWER SUPPLY. The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic DIP package. All param eters are tested to the specification of TLP721. (both condition and limits) Collector-Emitter Voltage 50% Min. 100% Min. UL Recognized BS415 :1990, BS7002 : 1989(EN60950) Certificate No.7364, 7365 SEMKO Approved Isolation -
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4000V 6000VPK 11-5E102 VDE0806 435/V 0805/D
Abstract: TOSHIBA TLP721F TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721F OFFICE MACHINE SWITCHING POWER SUPPLY The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP. All parameters are tested to the specification of TLP721. (both condition and limits) Unit in mm 4 3 1 2 mià 4.58 ± 0.25 Sd , 4. COLLECTOR 1 2001-06-01 TOSHIBA TLP721F RESTRICTIONS ON PRODUCT USE _000707I â'¢ TOSHIBA is -
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e152349 E152349 EN60065 EN4330784 11-5B202 1130V 8000V
Abstract: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA PHOTOCOUPLER TLP721 F GaAs IRED & PHOTO-TRANSISTOR (TLP721F) OFFICE MACHINE. SWITCHING POWER SUPPLY. The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP package. All parameters are tested to the specification of TLP721. (both condition and limits , guide for the applications of our products. No responsibility Is assumed by TLP721F - 1 * TOSHIBA -
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74285 BS-7002 VDE0884/ IEC435/VDE0805/D IEC601T1 VDE0750T1 T05HIBA
Abstract: TOSHIBA TLP721F TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721F OFFICE MACHINE SWITCHING POWER SUPPLY Unit in mm The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP. All parameters are tested to the specification of TLP721. (both condition and limits) 4 3 5LE 1 2 mià 4.58 ± 0.25 Sd Collector-Emitter Voltage Current Transfer Ratio Rank GB 55V (Min.) 50% (Min.) 100% (Min.) MADE IN JAPAN MADE IN -
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TOSHIBA VDE VDE0884/06
Abstract: [5] [5] DIP4 1 2 4 TLP320 TLP320-2 TLP320-4 TLP620 TLP620-2 TLP620-4 TLP626 TLP626-2 TLP626-4 TLP421 TLP521-2 TLP521-4 TLP504A TLP504A-2 TLP621-2 TLP621-4 TLP721F 0.5 mA TLP624 TLP624-2 TLP624-4 80 V VCEO TLP321 TLP321-2 TLP321-4 350 V VCEO TLP628 TLP628-2 TLP628-4 150 mA IF TLP629 TLP629-2 TLP629 , DIP 8 TLP131 DIP 6 TLP531 TLP621 TLP721F TLP747GF TLP741G TLP747JF TLP741J -
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TLP541J TLP521 TLP161G tlp541g tlp3131 TLP3507 TLP641J TLP629-4 TLP523 TLP627 TLP627-2 TLP627-4 TLP525G-2
Abstract: internal base connection BL YG GR 100 200 50 300 50 50 150 600 600 300 55 4,000 TLP721 TLP721F -
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0884 TLP629-3 TLP630 TLP631 TLP632 TLP731 TLP732
Abstract: GaAs IRED a PHOTO-TRANSISTOR TLP721F (T L P 7 2 1 F ) OFFICE M ACHINE. SW ITCHING POW ER SUPPLY. The T O S H IB A T L P 7 2 1 F co n sists of a ph oto-tran sistor optically coupled to a g a lliu m arsen id e in frared em ittin g diode in a four lead p la stic D IP p ack age . A ll p a ra m e te rs are tested to the specification of T L P 721. (both condition an d lim its) C o llector-E m itter V oltage C u rren t T ra n sfe r R atio R ank GB U L Recognized B S I A pproved 55V Min. 50% M in -
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P 721 0750T
Abstract: TO SH IB A TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721F TIP771F OFFICE MACHINE SWITCHING POWER SUPPLY T O ,~ Unit in mm m e TA O U TD A i v u iiiu n T T TDTT) 1 1 7 i u x I ¿ji i uuuoioi/o ui ,C cl , p n u w oi anoiouui u p w v an j ^ ^4-i - 1 1 , coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP. All parameters are tested to the specification of TLP721. (both condition and limits) Collector-Emitter Voltage : 55V (Min -
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LEC65
Abstract: TLP747D4 TOSHIBA PHOTOCOUPLER ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION: (D4) Types : TLP721, TLP721F, TLP733, TLP733F, TLP734, TLP734F, TLP747G, TLP747GF, TLP747J, TLP747JF This data sheet refers to black mold-resin devices, TLPxxx (D4xxx, M) that previously has a white-resin mold and have been changed. When designing new products please use black mold-resin devices. Type Toshiba
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TLP747
Abstract: TOSHIBA PHOTOCOUPLER ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION: (D4) Types : TLP721, TLP721F, TLP733, TLP733F, TLP734, TLP734F, TLP747G, TLP747GF, TLP747J, TLP747JF This data sheet refers to black mold-resin devices, TLPxxx (D4xxx, M) that previously has a white-resin mold and have been changed. When designing new products please use black mold-resin devices. Type Toshiba
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Abstract: 0582B ) TLP721F(D4) SEM K O Approved GB GR M in. (%) 50 100 50 100 100 50 100 100 M ax. (%) 600 600 600 600 300 -
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TLP7410 7741J TLP141G IEN60950 tlp73410 1U731/7M TLP3022/30S2 TLP3042/3062 TLP121
Abstract: (Min.) 0.5mm (Min.) 10.16mm pich TLP721F type 8.0mm (Min.) 8.0mm (Min.) 4.0mm (Min.) 0.5mm (Min -
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6000V
Abstract: tlp721gb Creepage Path Insulation Thickness 7.0mm (Min.) 7.0mm (Min.) 4.0mm (Min.) 0.5mm (Min.) 10.16mm pich TLP721F -
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MARKING TLP721F E0884/06
Abstract: TO SHIBA TOSHIBA PHOTOCOUPLER TLP721 (D4,M)SERIES, TLP733(D4,M)SERIES, TLP747(D4,M)SERIES ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP721, TLP721F, TLP733, TLP733F, TLP734, TLP734F, TLP747G, TLP747GF, TLP747J, TLP747JF This data sheet refers to black mold-resin devices, TLPxxx (D4xxx, M) that previously has a white-resin mold and have been changed. When designing new products please use black mold-resin devices. Type -
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Abstract: tlp2505 p72-1f p721f- p541g p721f Style D IP 4pin (11-6B1) D IP 4pln ii.F1 ) (11-5B101) TLP721 Type (11 - B E I ) TLP721F T y p * (11 -
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P161j toshiba tlp 627-2 P168J P160j ic tlp 759 TLP352 TLP521-1 11-BE102 11-7A101 11-7A102 11-7A105 11-7A1
Abstract: TLP721(2) TLP721F(2) 1 6 2 5 VDE0884 approved with option (D4) TLP731 1 2 3 6 , ): TLP721 and TLP721F are manufactured in Thailand by Toshiba Semiconductor Thailand, as well as in Japan -
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TLP621F TLP521 4pin ic TLP521 MOSFET DRIVER TLP151 tlp762 TLP250 MOSFET DRIVER application note 4N38A TLP124 TLP126 TLP181 TLP180 TLP594G
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