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MSC1200Y2PFBR Texas Instruments 8051 CPU with 4kB Memory, 24-Bit ADC, Current DAC, and On-Chip Oscillator 48-TQFP -40 to 125
CC1200RHMR Texas Instruments Low Power, High Performance RF Transceiver 32-QFN -40 to 85
LMR12007YMK Texas Instruments 750mA Load Step-Down DC/DC Regulator in Thin SOT23 Package 6-SOT-23-THIN -40 to 125
LMR12007YMKX Texas Instruments 750mA Load Step-Down DC/DC Regulator in Thin SOT23 Package 6-SOT-23-THIN -40 to 125
CC1200RHBR Texas Instruments CC1200 Low Power, High Performance RF Transceiver 32-VQFN -40 to 85
LMR12007XMKX Texas Instruments 750mA Load Step-Down DC/DC Regulator in Thin SOT23 Package 6-SOT-23-THIN -40 to 125

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Part : M5060THA1200 Supplier : Crydom Manufacturer : Newark element14 Stock : - Best Price : $55.88 Price Each : $64.26
Part : M5060THA1200 Supplier : Crydom Manufacturer : Master Electronics Stock : 10 Best Price : $38.86 Price Each : $47.04
Part : M5060THA1200 Supplier : Crydom Manufacturer : Sager Stock : - Best Price : $39.89 Price Each : $49.39
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THA 1200 S

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 21- 4030 3.S 26 RRME 1 ieaoo , Maintenanoe Technical data and Cat. Nos. 4-5 Ordering particulars S Selection of RSP for 3eries indication , Indicators type RSC and RRSC, Catalogue RK 13-3 E, Tha C0MB1FLEX* version of the indicator, type-RXSP, Is , dependent and tha correct polarity must be observed tor operation and electrical, resetting; sea the symbols , fabei with wording can be attached to the front of tha indicator above the flag {see "Labels", page 5). -
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asea RRME rk 14 1 asea sv RK 271 005 rk 03 u asea RRsc RK13-5E
Abstract: ?YmPuthuchumod~rinath8 . pmvtow rwoding of- the MOOEiiil S t a t u s Ra@tw. m hm no offoct on tha Tranunittu. . , , tha U A R T frouu 811 in- 8nd indkm~s t)n higbt priority pending int8rrupt to th8 CPU. Whik this CPU , + viously : LSRl to LSR4 will specify which war(s) hrr occurred. Chuactu 8rror st8tus is h8ndtad tha 88m8 , 500 ns ns ns n s PS /cS 100 55 45 175 100 75 tTLH hHL tTLH hiL See Figure 1 , =390 kfJ n s ns @ LG Semicon. Co., LTD. Parameter Measurement Information l DRIVER LG Semicon
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CD75323 GM6486 cd75232 R88D XMLF lg crt tv circuit diagram lg 29" crt tv circuit diagram RS-232-D GD75232 GD75323 EIA-232-D RS-232-C
Abstract: (U A R T s). It ganaratas any of tha 14 com m only usad b it rata* using an on-chip crystal o , PROGRAMMABLE BIT-RATE GENERATOR FA IR C H ILD C M O S M A C R O L O G IC TM 4702B/4702BX D ES C R IP T IO N - The 4702B /4702B X Bit-Rata Ganarator providat tha nacassary d o ck signals fo r , tha poasibla fraquancias m ust ba mada avaiiabls on any output channal. Ona 4702B /4702B X can control up to sight output channals. Whan mora than ona bit-rata ganarator is raquirad, thay can s till ba -
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tablet counter circuit diagram ITT 7212 4702B/47Q2BX 16-PIN F1004
Abstract: SANYO SEMICONDUCTOR CORP SEE D â  7en?D7t ODQSTS? S â  T-HR-fi-Otf- CMOS LSI ®294!A 4 , 120timxl20jjm Chip height 330 ym (package form delivery) 480 jjm (chip form delivery) 7=1=17071: OOOSTbO S T , ' 2100 2110 68 48 Seg25 1 750 16 76 P2 525 1 43 S 21 [TST 1720 t 69 49 Seg26 1 570 17 77 P3 705 1 , oâ'"Ic'rôuit o -rcirvjâ'" â . tst 2323».s OOOOt (X OOOOW ' â'"T4 db.e RAM : Data memory IR , for the S port is also selected at the same time. Refer to the SSW Instruction. - Provided with -
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LC5800 LC5863H QIP80A na44 marking date code Sanyo semiconductor LC86000 ti 8ak xaxs 12K/16K-B LC5863H/64H 5864H T-49-19-04
Abstract: clear input in addition to the clocked inputs. CLOCKED INPUT OfEMTIOHQ) S t4> C 1 0 1 0 0 00) 1 0 * 5 Q. 0 1 0® 11] £3) 1 2 - - 10 (10) [3] 1 1 0 0 12) (5) [1] Í3) 2 , to tha negativa transition of the clock pulM Is donotod t. and th* timo parlod subsoquont to this transition Is donotod U+i. 3. (h I* tha itato of th* Q output 1« tha timo poriod t*. 4. Clock polso fall timo , + 2 5 *C + 7 5 #C + 1 5 #C + 2 S *C Min Ma + 5 5 *C Min Mn APPLIED TO m LISTED BELOW; find -
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C723P MC816P MC723P MC723 mc700p MC700P/800P C816P
Abstract: MECL II IVI Cl 000/1200 series MC 1035 MCI 235 Three differential amplifiers with , ) ELECTRICAL CHARACTERISTICS Tha output polarity thown in the logic diagram at tha riflht â'¢Â« trua only V8B , .iü 3.6.7 0,7,10 3,7.10 4.5.10 3.5.10 3.6.10 3,6.10 3,S.10 3.5,1! 4.3,11 _ â'¢1,5,11 i (Gnd) I , ) - 46 to 50 MHz Useful gain - to 100 MHz Common mode refection ratio ~ 80 dB Tha amplifiers may be , amplifier. The active current source in tha differential-pair emitters reduces the effects of saturation so -
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MC1035 RUR 117-5 MGF 1200 mc1235 MC 140 transistor MCI035 MCI235 MC103S MC1235 020/MC1220
Abstract: / 0.30 7 1 2 B41 MSS60,841-B80 Ring Quad 1200 6.0 0.06 / 0.08 23 28 B80 MSS60,846-B80 Ring Quad 1200 6.0 0.10 / 0.12 17 23 B80 MSS60,848-B80 Ring Quad 13 18 B80 1200 6.0 0.12 / 0.15 Test IF = IR = VR = 0 V Conditions , 0.32 / 0.38 7 1 2 H40 MSS60,841-E45 Ring Quad 1200 6.0 0.30 / 0.35 23 28 E45 MSS60,841-H40 Ring Quad 1200 6.0 0.40 / 0.45 23 28 H40 MSS60,846 Aeroflex / Metelics
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Metelics MSS60-841-E45 448-E45 B10B b20 diode MSS60,444-E45 MIL-PRF-19500 MIL-PRF-38534 44-B10B 48-B10B 53-B10B 244-B20
Abstract: AVANTEK INC MME D â  llMlThb 0QQÃG71 S BIAVA UTO/UTC 1501 Thin-Film Cascadable Amplifier 5 , - noted) _ KEY: +25®C- +85Câ'"-55°C-â  Gain 11.0 m 10.5 â'¢o tfto.o S M s.o -â'". - , '" 400 600 1200 1COO Frequency, MHz 400 800 1200 Frequency, MHz leoo MAXIMUM RATINGS , f«pr«i)n[aiWe, dlitilbutor or fold ialal offlca for furthar Iniormaljorh Uattnj» an la th« tudc of this , PERFORMANCE OVER TEMPERATURE (continued) T-74-13-01 S.-3 "3. £3 i V m Tñ i? § . s Power Output -
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transistor c55c UTC-21 AVANTEK uto utc 1018 Avantek S AVANTEK utc
Abstract: ) Vc e s Vq e s ic 'C(pk) PD Vr r m If 'F(pk) 1200 ±20 ia 32 75 1200 16 32 V V A A W V A A Symbol , |q e s ic e s 4.0 1200 - - ±20 100 2.0 6.0 3.5 500 2.5 UA 6.0 1300 2.4 2700 100 350 - , Interfacing to the user's control board. · Short Circuit Rated 10 ^s 0 25°C · Pln-to-Baseplate Isolation , Motore)« Profond Dovfoa 16 AMP, 1200 VOLT HYBRID POWER MODULE · Access to Positive and Negative DC , Current (1) Peak Non-repetlttve Surge Current Vr r m lo >FSM 1200 16 330 V A A Symbol Value Unit -
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BT 1840 PA pms Bridge Rectifier uaa 1300 MHPM7B18A120B/D MHPM7B16A120B
Abstract: SEMICONDUCTOR CORP S2E D BT 7Tì7G7b OOGbOOfi S LC5866H.5868H - T-49-19-04 Pin description Pin name I/O QIP , for the S port is also selected at the same time. Refer to the SSW Instruction. â'¢ Provided with , specification with eO = 32.768 KHz. (S)"L'7nHu level hold Tr selection (£) Pull-up/pull-down resistor , SEMICONDUCTOR CORP 25E D â  7^=17071, DODbDll S â  LC5866H, 5868H 1-49-19-04 | Oscillation circuit optionsl , #15) is used as the timer base clocks, LCD driver waveform generation signals, and S/K port clock for -
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XTAL 38khz TDK L7H soi switches 2003 Sfl03 29-42a ch 2128-4 RAM 3044B LC5866H/68H 12K/16K- 7T1707 T-90-20 3026B
Abstract: > * O â'¢M 3 O c o o E 3 E S >- o. 25 50 75 100 135 150 TA-Frer-Air Temp«ratur»-*C 1600 ï E I | m a. I 1200 O | 1000 3 O 3 £ C O o E 3 E S l a. 800 600 400 200 0 v , nmmin -a maaaurad en callacrar laad 1/ia mil Tha awM Manti* lai JCOCC laamaiad data »â'¢Â» tha JN370à , - 'C " -50 S* Now 5 100 100 MHj Common-Bast Open-Circuit CntMl """ Output Capacitance VCB»-10V. lE , 2N370J 2N3?03 only THERMAL INFORMATION from f - 20 MM« to th« fnouoticv FREE-AIR TEMPERATURE -
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2N3702 2N3703 2N3704 2N3706 A8T3703 3n3703 A6T3 AST3702
Abstract: . Version: D03 s TAIWAN SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) VF , 1M180Z 180 171.0 189 0 1.4 1200 7000 025 SO 136 a - 1M200Z 200 190.0 210.0 1.2 1500 8000 0.25 5.0 152.0 , ) Measurement. Guarantees the zener voltage ivhen masaurad at 90 seconds while maintaining tha lead temperature , tha dc zonor current (IZT or IZK) Is superimposed on IZT or IZK. 5. Surge Current (lr -
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2A3 zener diode 414 B zenar diode 1n475ba dioda zener zener color codes 1N474OA 1N4740A DO-41 MIL-STD-202 1M47XXA MH-12
Abstract: Panasonic Series: A lu m inu m E le ctro lytic C a pa cito rs T-HA Features # 4 , u m sp e c ifie d rip p le c u rre n t 470 ~ 1500 T-HA Standard Ratings Cap. (pF) Size (mm) D xL Max. 105°CRI pple (Arms) 120Hz 10k-50kHz Max. 20°C 120 Hz E S R (^) Panasonic Part No. Cap. (pF , B3ET2DA272EA B3ET2DA272FA B3ET2DA332EA B3ET2DA332FA B3ET2DA472FA 250 VDCWorldng, 300 VDC Surge 1200 1500 , BDEI2EA182FA BDEI2EA222EA BDEI2EA222FA ECET2EA332FA 680 820 820 1200 1200 1500 35 x5 0 35 x6 0 40 x5 0 35 x8 0 -
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BDET1CA563EA BDET1CA683EA BDET1CA683FA ECET1CA823FA BDET1CA104EA BDET1CA124FA
Abstract: TECHNICAL DATA MR810 thru MR814 MR816 thru MR818 Dosignoi s Iîatii Slioot SUBMINIATURE SIZE, AXIAL LEAD , 300 400 500 BOO 1000 1200 Volts RMS Reverse Vol lege VfllRMSJ 35 70 140 210 260 420 660 700 Volts , LOAD _ 28 a. Z S 2.4 y- z lu £ 2.0 s o ë 1.6 < 3 e 0 M u. lu (0 « 0.8 u1 > 1 0.4 , 40 S öS V X SO 60 70 80 90 100 , pul». To determine maximum junction temperature of tha diode in a given situation, the following -
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MR812 MR813 MRB17 MR818 diode Diode MR810 diodes IN4723 MR818 equivalent T-03-/3 MRB11 1N4934
Abstract: '¢ IDEAL FOR HIGH DYNAMIC RANGE RECEIVER APPLICATIONS â'¢ 1.6 clB NOISE FIGURE AT 12 GHz â'¢ +24. S ci Bill , 25°C SYMBOL PARAM . Ã" C ONDITIOKS Saturated Drain Current lv Vds= 4.0 V VO S=0.0V Transconductance , Transconductance gm 120.0 mS Transit Time tau l.O paec ORDERING INFORMATION Chip Package 70 Package 71 Package 73 , vs. BACKSIDE CHIP 400 325 2SO 175 lOO lso i; 15 lOO V5°0 or Lower 1 1 s. X , Power mW ««ding any on« of tH«s« limits i: I'-faiKirv b«low th« design goals. 2. Eue« «ding any -
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A973 MWT-A970 A971 MwT-A973 T-AS70 94S38
Abstract: /1200 Volts A b so lu te M axim u m R ating s, Tj= 25 C unless otherwise specified Ratings Junction , IGBTMODru E-Series Module 75 Amperes/1200 Volts O UTPUT CH AR ACTERISTICS (TYPICAL) T R A N S F E R , _ ÇM75DY-24E DU3l IGBTMODTM - . . . , . t-Series Module 75 Amperes/1200 Volts i r PRX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S. A , -24E Dual IGBTMODTM E-Series Module 75 Amperes/1200 Volts Features: CM75DY-24E Outline Drawing Low -
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powerex nd BP107
Abstract: ratings ( Tc=25°C ) SymboIs Ratings Collector-Emitter Voltage Ve E S 1200 V , # m anufacturing p u rp o s e s w ithout tha a * p r o i i w r liia n c o n ia n t of fu}l Electric , 2 2 3 a ? â' 0004M01 27b Ì2 -* - S P E C I F I C A T I O N 1G B T DEVICE NAME , NAME APPROVED Fuji Electric Codici DRAWN CHECKED s y y d z tO ÿ MS 5 F 3 5 , = 15A IF= 15A. VGE=-10V VR= 200V di/dt=100A///s MS Conditions Unit 5. Thermal -
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MS5F3514
Abstract: i ! E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without , =25°C ) Items Symbols Ratings Collector-Emitter Voltage Vces 1200 V Gate-Emitter Voltage , ' °C N â  cm â  > M S 5 F 3 5 2 9 2/10 ± 4 Electrical Characteristics ( at Tc , time Vet = 0V Vce = ±20V V ce = 0V 1200 tr Switching Time mA 1c = 10A Cies , ¼ l * n d th« Inf0»m *t¡0n he»eln l i ih» p r o p e r t y o I Fuji E lic in e C o . l i d T h e -
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0GG4357 MS5F3529 SC-65 00D43
Abstract: Collector-Emitter Voltage VcES 1200 V Gate-Emitter Voltage V ge S ±20 V 15 A 8 A , . This S p ecificatio n is subject to change without notice. â  22307^2 G G 043H5 b l7 , Screw Torque * o o' £ o Fuji Electric CaJLld. QG0434L SS3 M S 5 F 3 6 8 7 _ â , max. If = 8 A V IF= 8 A, VGE=~10V VR= 200V di/dt=100A/^s MS Conditions 0.35 , ,Ltd 22307^2 o o A 000M 347 M S 4TT â  5 F 3 6 8 7 3/12 H04-004-03 C o l l e -
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MS5F3637 QQQ4354
Abstract: w Tâ'™s reliable metal system and devices from each waier are screened to insure reliability. All chips are passivated using M w Tâ'™s patented â'Diamond-Like Carbonâ' process for increased durability, Designers can use M w Tâ'™s unique BINT selection feature to choose devices from narrow Idss , IT IO N S SY M BO L ID S S Gm Vp BV G SO BVGDO R tli U ¡NIT S R F SPECIFICATIONS AT Ta = 2S°C mA P i n c h - o f f V o l ta g e V d s= 3 .0 V I D S = 5 .0 m A G a t e - t o - -
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