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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
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HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16

ST13003 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ST13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n MEDIUM VOLTAGE , Unit V V V 1.5 3 0.75 1.5 40 -65 to 150 150 A A A A W o C o C 1/7 ST13003 , STMicroelectronics sales office for delivery details. 2/7 ST13003 Safe Operating Areas Derating Curve , Voltage 3/7 ST13003 Inductive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time ST13003 Figure 1: Inductive Load Switching Test Circuits. Figure 2: Resistive Load Switching Test STMicroelectronics
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NPN POWER TRANSISTOR SOT-32
Abstract: ST13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE , . Operating Junction T emperature -65 to 150 o C 150 o C 1/7 ST13003 THERMAL DATA R , STMicroelectronics sales office for delivery details. 2/7 ST13003 Safe Operating Areas Derating Curve , Voltage 3/7 ST13003 Inductive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time ST13003 Figure 1: Inductive Load Switching Test Circuits. 1) F ast electr onic switch 2 STMicroelectronics
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ST-13003 0016114/B
Abstract: ST13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n MEDIUM VOLTAGE , C o C 1/7 ST13003 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case , your nearest STMicroelectronics sales office for delivery details. 2/7 ST13003 Safe Operating , Base Emitter Saturation Voltage 3/7 ST13003 Inductive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time ST13003 Figure 1: Inductive Load Switching Test Circuits. Figure 2 STMicroelectronics
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Abstract: ST13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE , . Operating Junction Temperature W -65 to 150 o C 150 o C 1/7 ST13003 THERMAL , STMicroelectronics sales office for delivery details. 2/7 ST13003 Safe Operating Areas Derating Curve , Voltage 3/7 ST13003 Inductive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time ST13003 Figure 1: Inductive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive STMicroelectronics
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of st13003
Abstract: ST13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE , . Operating Junction Temperature W -65 to 150 o C 150 o C 1/7 ST13003 THERMAL , . du o Pr e let o bs O 2/7 ST13003 Safe Operating Areas Derating Curve DC , 3/7 ST13003 Inductive Fall Time Inductive Storage Time Reverse Biased SOA uc d te le (s) ct du o Pr e let o bs O 4/7 so Ob - ro P s) t( ST13003 STMicroelectronics
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Abstract: ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data , Marking Package Packaging ST13003 13003 SOT-32 Tube ST13003-K 13003 SOT , www.st.com Electrical ratings 1 ST13003, ST13003-K Electrical ratings Table 2. Absolute maximum , . DocID13533 Rev 5 ST13003, ST13003-K 2 Electrical characteristics Electrical characteristics , ‰¤ 1.5% DocID13533 Rev 5 3/10 10 Electrical characteristics 2.1 ST13003, ST13003-K STMicroelectronics
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transistor ST 13003 w, TO-126 13003 transistor smps circuit electronic ballast by transistor 13003 transistor ST 13003 w SC06960 ID13533
Abstract: ® ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE , 1.5 3 0.75 1.5 40 -65 to 150 Uni t V V V A A A A W o C May 1999 1/7 ST13003 THERMAL , ST13003 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 ST13003 Inductive Fall Time Inductive Storage Time Reverse Biased SOA 4/7 ST13003 Figure 1: Inductive Load Switching Test Circuits STMicroelectronics
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Abstract: ST13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE , August 2000 W -65 to 150 o C 150 o C 1/7 ST13003 THERMAL DATA R t hj-ca se , STMicroelectronics sales office for delivery details. 2/7 ST13003 Safe Operating Areas Derating Curve , Voltage 3/7 ST13003 Inductive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time ST13003 Figure 1: Inductive Load Switching Test Circuits. Figure 2: Resistive Load Switching Test STMicroelectronics
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Abstract: ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE , ST13003 THERMAL DATA R t hj-ca se R thj-a Thermal Resistance Junction-case 3.12 Thermal , THOMSON MICROELECTRONICS sales office for delivery details. 2/7 ST13003 Safe Operating Areas , Emitter Saturation Voltage 3/7 ST13003 Inductive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time ST13003 Figure 1: Inductive Load Switching Test Circuits. Figure 2: Resistive STMicroelectronics
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Abstract: ST13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE , 0.75 Base Current A 1.5 A 40 -65 to 150 W o C 1/7 ST13003 THERMAL DATA , STMicroelectronics sales office for delivery details. 2/7 ST13003 Safe Operating Areas Derating Curve , Voltage 3/7 ST13003 Inductive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time ST13003 Figure 1: Inductive Load Switching Test Circuits. Figure 2: Resistive Load Switching Test STMicroelectronics
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Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC , e ra tu re January 1998 1/7 ST13003 THERMAL DATA Rth j-c a se T h e rm a l R e s is , SGS-THOMSON * 7 # ifflO d m n e M K io ST13003 Safe Operating Areas Derating Curve 0 40 , ) Base Emitter Saturation Voltage fZ T SGS-THOMSON * 7 # ra o e im iie M K io 3/7 ST13003 , # M eiB iniieH ieR uæ ies ST13003 Figure 1 : Inductive Load Switching Test Circuits -
OCR Scan
transistor 13003 AD j e 13003 transistor transistor eb 13003 GC733B0
Abstract: S G S -T H O M S O N E fi M©lF3 m i(g ? [M 0 igS S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS: . ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING . SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage , 1/4 701 ST13003 THERMAL DATA Rthj-case Rthj-a Thermal Resistance Junction-case Thermal -
OCR Scan
transistor LB 13003 C T 08 13003 transistor g 13003 transistor m 3003 g transistor switch 13003 j s 13003 transistor ST130Q3
Abstract: STX13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s ST13003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure STMicroelectronics
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transistor STX13003
Abstract: STBV32 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s ST13003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure STMicroelectronics
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Abstract: STBV32 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . ST13003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS: . ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar -
OCR Scan
GC7B400 GC73350 GC73380 SC-0B54 RBB12J SC-0351
Abstract: STX13003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s ST13003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter STMicroelectronics
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Abstract: STBV32 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s ST13003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter STMicroelectronics
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Abstract: STBV32 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s ST13003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure STMicroelectronics
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ot 112
Abstract: STBV32 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s ST13003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure STMicroelectronics
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Abstract: resistor R, capacitor C and the diac supply the first input base current to the transistor Q2. After the , /9 AN1329 - APPLICATION NOTE the base of the bipolar transistor via the transformer T. In fact, as soon as the transistor Q2 is on the current in the primary of transformer T (that is a ferrite , feedback on the base of the transistor is removed and after its storage time the transistor results switched off. In the mean time the feedback of the transformer acts to switch on the transistor Q1. It is STMicroelectronics
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ELECTRONIC BALLAST DIAGRAM 20w cfl ballast 9w working of fuse tube light by 4 diode diac advantage 9 watt cfl circuit diagram ELECTRONIC BALLAST 11W circuit diagram STBV68 STBV45 STBV42 BUL118 BUL128D-B BULD118D-1
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