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PH0912-2

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Abstract: Ma Features Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Outline Drawing · Designed for JTIDS Applications · NPN Silicon Microwave Power Transistor · Common Base Configuration · Broadband Class C Operation · High Efficiency Interdigitated Geometry · Diffused Emitter Ballasting Resistors · Gold Metallization System · Internal Input Impedance Matching · Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter -
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4220S
Abstract: Afa Features Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Outline Drawing · Designed for JTIDS Applications · NPN Silicon Microwave Power Transistor · Common Base Configuration · Broadband Class C Operation · High Efficiency Interdigitated Geometry · Diffused Emitter Ballasting Resistors · Gold Metallization System · Internal Input Impedance Matching · Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter -
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transistor 355 CC 1215 SHM-2E M2E05