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ONO 5E

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Abstract: R) £ ® P * S ?£ (M o n o ) tfj?jHÌS;(M ono) Symbol It ot Sep THD THD Vo CB Vi V P(ON) T est C ircuit , * V, (m V,) S e p - Vasc 80 70 60 50 40 30 20 T H D (M ono) - Vi 0.8 0.7 c o 06 2 T H D , icato r Pilot Det. L o w -p ass F ilte r Ä ^ J' 7 > 7 `ffifi) VCO RCB#5e & T - X O -, )fày& O -
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AN7414 AN7256
Abstract: K -7 > y 7s $ / T ransistors DTB133HK DTB133HK I (8 È Digital Transistors (Includes Resistors) "J J -IT ransistor Switch · ft · Dimensions (Unit : mm) üb, À * f l l < 7 ) Î WI t 4- L T - f > a '- * 0 S S A ''* U 3 cT ' £ £ 2) iS J iÎS Î t C J : `J fê J & L , £ lC 77 - f v u - ' > 3 > J E IC /W rx ? É 5 : t , i t , 3 ¿: 3) ON-O FF T Ü ft-f 5 fc » , fêgsO ISi+tf'giiC ÎTâ.-âo · Features 1 ) A built-in bias resistor allows in verter circuit -
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Abstract: Output capability: +64mA/-32mA â'¢ SYMBOL PIN DESCRIPTION SYMBOL PIN NUMBER 5E 1 2, 3 , ] ONO |t7 OO T il DO (T T LE Vcc . Pin a* TOP VIEW April 26, 1991 GND-Pnl2 228 , interface latch (3-State) 74ABT841 LOGIC DIAGRAM FUNCTION TABLE INPUTS OUTPUTS -
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AM29841 74ABT841N 74ABT841D
Abstract: ( , Old ÃJD, «2 CE j±l°3 CP [T ÃÃ"JÃ'j ONO HE LOGIC SYMBOL (IEEE/IEC) 14 13 12 1 1 1 , grounded following momentary connection to 4.5V, OE2, Ei, Ã2 and all Data inputs grounded, CP and 5E, at -
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74LS173 N74173N N74LS173N N74LS173D CD7186D 74173 pin configuration ttl 74173 dm8551 74173 ttl 74LS173 74LS173 circuit diagram DM8551 SO-16
Abstract: Circuit Applications ONO IRQ OFF WDOUT IN4/5 2.5V TO 5.5V IN2/3 OUT1 VCC IN1 , to GND.-0.3V to +6V RSO, ONO to GND , ) = VDIN (SDA) = V CS (AS) = V OFF = 3.6V; ON = GND = PGND = 0; RSO, ONO, DR1, DR2 = open; BP , V CS (AS) = V OFF = 3.6V; ON = GND = PGND = 0; RSO, ONO, DR1, DR2 = open; BP bypassed with 0.01uF , VIN VIN1; ON, DIN (SDA), SCLK (SCK), and CS (AS) only OFF Pulldown Resistance ONO Output Low Maxim Integrated Products
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MAX1798 MAX1799 MAX1798EUP MAX1799EUP bd 9d 298V MAX1798/MAX1799
Abstract: DTC115EU/DTC115EK/DTC115ES/DTC115EF DTC115EL/DTC115EA/DTC115EV h 7 > 7 ^ ^ / T ransistors D T C 1 15 E U /D T C 1 15 E K /D T C 1 1 5ES D T C 1 15 E F /D T C 1 15 E L /D T C 1 15EA D T C 11 5E V (jgfitrtKh7>->â *) ^/T ran sisto r Switch Digital Transistors (Includes Resistors) â'¢ \ f >i @/ Di mensi ons (Unit : mm) m m tt L T O ft, 0#B 8) M -M ~T V o X 2 , £ V X 2 A lC A - T T 7 * S /c , A £ 4 U i o 5 o 3) ON-O FF A ft, 4 -
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100MH
Abstract: »M [j ÃI Y- ONO fc ül lu FAST 74F756, 74F757, 74F760 Buffers 74F756 Octal Inverter Buffer , and 74F760istheopen collector version of 74F244. These devices feature two Output Enables, and 5E (or , 13.5 8.5 7.5 3.0 14.0 9.0 ns Vlh Vhl Propagation delay 5E or OEh to Yâ'ž a on Waveform 1,2 9.0 4.5 -
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74F240 74F241 N74F756N N74F757N N74F760N N74F756D
Abstract: 1 E YE â'¢ E yE â'¢E ve ONO E pjtriâ'" 3 Vcc «h E 'E 3' *E ñ) y â'¢E 3' TE 3Y â E Ïà , V| = 2.7 V 20 HA Iil LOW-level input current Vcc-max I inputs, V| = 0.5V Either 5E input at 2.0V Does not apply to 'LS365A or 'LS367A -40 -20 /uA I inputs V| - 0.4V Both 5E inputs at 0.4V -
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LS366A LS368A 74LS365A 74LS366A N74365AN N74LS365AN 367A 365A pin N74367AN N74366AN
Abstract: 6458s CONFIGURATION 'F455 , ° i Ï3 O NO Î7I ONO W " f .ii » " ' '5 ' " ? 1- p| 1 II 1 1 II 1 O .O .D .D .D .D .H , OUTPUTS INPUTS 5E, L L H X L L X H D L H X X *F455 'F456 an H L Z Z Q_ n L H Z Z High voltage level L -
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f455 74F455 74F456 F280A F655A F656A N74F455N
Abstract: Tracking M Multi. Control ono. thti Head Sw itch Output PG (B ) Mono. Multi. 7 C T L Amp. 7 â , ¯, Pin © M.!± £â'¢ S'l 5e Test Circuit 8 (Vqh6 Vol6) , 7 (S 4) 0.056«F ( sg T -
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AN6346N 6346N
Abstract: Single-Cell Li+ Systems 2- or 3-Cell NiMH, NiCd, or Alkaline Systems Typical Operating Circuit ONO IN4/5 , GND.-0.3V to +6V RSO, ONO to GND , = GND = PGND = 0; RSO, ONO, DR1, DR2 = open; BP bypassed with 0.01uF, OUT1 bypassed with 4.7uF; OUT2 , /3 = VIN4/5 = VSCLK (SCK) = VDIN (SDA) = V CS (AS) = V OFF = 3.6V; ON = GND = PGND = 0; RSO, ONO, DR1 , SDA Output Low Level (MAX1799 only) OFF Pulldown Resistance ONO Output Low Level ONO Output High Level Maxim Integrated Products
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MAX1798/MAX1798A/MAX1799/MAX1799A MAX1798/ MAX1798A/MAX1799/MAX1799A MAX1798A MAX1799/MAX1799A 21-0091I
Abstract: Packages Applications CDMA Cellular/PCS Handsets ONO IRQ OFF WDOUT IN4/5 2.5V TO 5.5V , to GND.-0.3V to +6V RSO, ONO to GND , , ONO, DR1, DR2 = open; BP bypassed with 0.01uF, OUT1 bypassed with 4.7uF; OUT2, OUT3, OUT4, OUT5 , ) = VDIN (SDA) = V CS (AS) = V OFF = 3.6V; ON = GND = PGND = 0; RSO, ONO, DR1, DR2 = open; BP , ONO Output Low Level IONO = 1mA ONO Output High Level IONO = -1mA RSO Output Low Level Maxim Integrated Products
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MAX1798EVKIT MAX1799EVKIT MAX1799A MAX1798ETP MAX1798AETP MAX1798AEUP T2055
Abstract: s w i t c h i n g c i r c u i t 7 'n " j^ 0 / B l o c k D iagram M ono S ub -C h . R , SW 2 SW 3 SW 4 SW 5 SW 6 SW 7 SW 8 SW 9 fflj 5e iS Gv(Main), THD(Main -
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AN5822 2514-L
Abstract: ID'lb [I ig k>b ONO [T ZED *b 1 « S 4 3 10 11 12 13 1S A I I I I I I I I A '2a '3a â ob , following conditions with the outputs open: Condition 1: All inputs grounded. Condition 2: Ç5E at 4.5V, all -
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LS253 LS353 74LS353 N74LS353N N74LS353D 1N916 1N3064 74LS LS06930S
Abstract: QFN Packages Applications CDMA Cellular/PCS Handsets ONO IRQ OFF WDOUT IN4/5 2.5V , to GND.-0.3V to +6V RSO, ONO to GND , = GND = PGND = 0; RSO, ONO, DR1, DR2 = open; BP bypassed with 0.01uF, OUT1 bypassed with 4.7uF , ) = VDIN (SDA) = V CS (AS) = V OFF = 3.6V; ON = GND = PGND = 0; RSO, ONO, DR1, DR2 = open; BP , ONO Output Low Level IONO = 1mA ONO Output High Level IONO = -1mA RSO Output Low Level Maxim Integrated Products
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MAX1798EGP MAX1798AEGP mosfet motor dc 48v TCXO 10 MHz philips
Abstract: -Cell NiMH, NiCd, or Alkaline Systems Typical Operating Circuit ONO IN4/5 2.5V TO 5.5V OFF IN2/3 OUT1 IN1 , GND.-0.3V to +6V RSO, ONO to GND , = GND = PGND = 0; RSO, ONO, DR1, DR2 = open; BP bypassed with 0.01uF, OUT1 bypassed with 4.7uF; OUT2 , /3 = VIN4/5 = VSCLK (SCK) = VDIN (SDA) = V CS (AS) = V OFF = 3.6V; ON = GND = PGND = 0; RSO, ONO, DR1 , SDA Output Low Level (MAX1799 only) OFF Pulldown Resistance ONO Output Low Level ONO Output High Level Maxim Integrated Products
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Abstract: ´Ãª a2C to 23 3*io »ie 11 22 3ci 12 21 307 °oC 13 20 30, °i c 14 19 30, °2C 15 18 304 ono c 16 , forces 12V ±0.5V on Ag. With CÃ', , Data Hold Time 2 fJLS tOES CE Setup Time 2 JUS »OE Data Valid from (5E 5 150 ns tDFP 5E -
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M27C040 271184 A-18 cev code M27C04 M27C040 uv
Abstract: y16na ü¤û¤úAñ¨ù õ"ñ W8Wö"ñ õ%""ô 83¦W¤Ý"¡î ¤$Aê øñó÷ õï ñó òëñð îï íìë þ ¨ ¤ ¥ ¢ ÿ §ÿ £¦b©§¦¤ £¡Aþ é áâç äã á ß Þ Ü ÚÛ ÙØ× "æ¨ è× ¤æ¨ Ùå ¨¦â bàoÝ"¡Ú ¤$AÖ A 9 9 ¡@58 7 6 4 §¡53 D C @5B I0"5E Diotec
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SPR11 SPR14 SESA-100-2B
Abstract: HZUIO Hi 200 9. 45 10. 55 5 30 5 2 7 Vz«äm»40iis-e»|5E, VzífflKí}3 402C HZUll Hi 200 10. 44 , ) (6) (7) (8) ») (1) (2) (3) (4) (5) (6) (7) (8) (9) 0645 sitftsaa esa io 9 3 o-M-o 8 2 oNo 7 1 -
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HZS33J HZS33L HZS33N HZS36 HZS36E HZS36J msc 0645 HZS39N HZS39E HZS36N HZS36L
Abstract: Packages Applications CDMA Cellular/PCS Handsets ONO IRQ OFF WDOUT IN4/5 2.5V TO 5.5V , to GND.-0.3V to +6V RSO, ONO to GND , 0; RSO, ONO, DR1, DR2 = open; BP bypassed with 0.01ÂuF, OUT1 bypassed with 4.7ÂuF; OUT2, OUT3, OUT4 , ) = VDIN (SDA) = V CS (AS) = V OFF = 3.6V; ON = GND = PGND = 0; RSO, ONO, DR1, DR2 = open; BP , Pulldown Resistance OFF = 5.5V ONO Output Low Level IONO = 1mA ONO Output High Level IONO = Maxim Integrated Products
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