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2SC5930(T2MITUM,FM Toshiba America Electronic Components TRANS NPN 1A 600V SC71
2SC5201,T6F(J Toshiba America Electronic Components TRANS NPN 50MA 600V TO226-3
2SC5930(TPF2,F,M) Toshiba America Electronic Components TRANS NPN 1A 600V SC71
2SC4706 DK Sanken Electric Co Ltd TRANS NPN 600V 14A TO3P
2SC5201(TE6,F,M) Toshiba America Electronic Components TRANS NPN 50MA 600V TO226-3
2SC5201(T6MURATAFM Toshiba America Electronic Components TRANS NPN 50MA 600V TO226-3

NPN 600V transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2.5V Specified PowerTrench; BGA MOSFET 33A, 600V StealthTM; Diode NPN Multi-Chip General Purpose Amplifier NPN Silicon Transistor PNP Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor NPN Triple Diffused Planar Silicon Transistor NPN Silicon Transistor NPN Silicon Transistor NPN Triple Diffused Planar Silicon Transistor NPN Silicon Transistor NPN Silicon Transistor Bi-Directional Triode , grades of low tolerance: 0.5%,1% and 2% · Transistor output · CTR 100% to 200% · Wide viewing angle Fairchild Semiconductor
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600V igbt dc to dc buck converter FAN4803 24v output power supply diode 8a 600v 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 QTLP673C-R/E/O/Y/IB/IC/IG
Abstract: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a , 600 5.0 600 V pF (SEE REVERSE SIDE) R0 MJ10023 NPN POWER DARLINGTON TRANSISTOR , (SAT) hFE VF Cob MIN MAX UNITS VCE=600V, VBE(OFF)=1.5V VCE=600V, VBE(OFF)=1.5V, TC=150°C 0.25 5.0 mA mA VCE=600V, RBE=50, TC=100°C VEB=2.0V IC=100mA IC=20A, IB=1.0A IC=20A, IB Central Semiconductor
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darlington NPN 600V 12a transistor darlington NPN 600V 20a transistor NPN Transistor 600V NPN 600V transistor darlington application MJ10023 darlington NPN 600V
Abstract: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR MRTNO. 2N3904 2N3906 2N4401 2N4403 , KSH3055-TF KSH3055-I KSH29C-TF KSH29C-I KSH30C-TF KSH30C-I KSH44H11-TF KSH44H11-I DESCRIPTION TR, NPN, GP, 60V, TO-92 TR, PNP, GP, 40V, TO-92 TR, NPN, GP, 60V, TO-92 TR, PNP, GP, 40V, TO-92 TR, PNP, AMP, 50V, TO-92 TR, NPN, AMP, 35V, TO-92 TR, NPN, AMP, 180V, TO-92 TR, NPN, HIVOLT, 250V, TO-92 TR, NPN, AMP, 80V, 0.5A, TO-92 TR, NPN, VHF/UHF, 650MHZ, TO-92 TR, NPN, DALRLINGTON, 30V, 0.5A, TO-92 TR, PNP, GP -
OCR Scan
KSH117-1 IRF9210 darlington NPN 600V 8a transistor transistor IRF9640 fet 10a 600v NPN Transistor 600V 5A TO-220 N-CH POWER MOSFET TO-92 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10
Abstract: transistor 1 M.T ZETEX NPN W 5A 1.2W 3P/TO-92 O60V M .1 32464 ZTX851 W O W .CO Y.C 100V .TW , general purpose transistor .C NPN 50V Y. WW WW 00Y O .TW 100mA 500mW W W W 100 M.T amplification , 2PD601AS PHILIPS NPN general purpose transistor W .T amplification 00Y WW .100 .T W.1 Y.COM O W , -31033-TR1 Agilent NPN 3P/SOT-23 310 .10 Bipolar Transistor O W WW .C NPN .TW W 32427 BC817-25W PHILIPS NPN general purpose transistor 500mA 45V 160-400 SOT323 6B* WW .100Y OM 150MA 1W 15V 41797 -
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QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 ZTX653 NPN00Y ZTX689B ZTX690B NPN100Y ZTX705
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ï , ® NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage , 60-65 L 65-70 2 of 3 QW-R201-055.I MJE13001 NPN SILICON TRANSISTOR TYPICAL , VCB=600V, IE=0A VCE=400V, IB=0 VEB=7V, IC=0A MIN TYP MAX 600 400 7 1.1 100 200 100 UNIT Unisonic Technologies
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MJE13001G- MJE13001L-
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L , QW-R201-055.D MJE13001 NPN SILICON TRANSISTOR Capacitance,COB (pF) Saturation Voltage,VBE(SAT , www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-055.D MJE13001 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Unisonic Technologies
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MJE-13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR mje13001 application all MJE13001 equivalent transistors MJE13001G MJE13001-
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON POWER TRANSISTOR FEATURES NPN SILICON TRANSISTOR * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L , CHARACTERISTICS NPN SILICON TRANSISTOR Collecter Current,IC (mA) Saturation Voltage,VBE(SAT),VCE(SAT , -055.E Copyright © 2011 Unisonic Technologies Co., Ltd MJE13001 ABSOLUTE MAXIMUM RATINGS NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Base Voltage VCBO Unisonic Technologies
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npn 600v to92
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON POWER TRANSISTOR FEATURES 1 NPN SILICON TRANSISTOR * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A SOT-89 1 TO , Voltage Emitter Base Voltage Collector Current NPN SILICON TRANSISTOR RATINGS UNIT 400 V 600 V 7 V , www.unisonic.com.tw 2 of 3 QW-R201-055.F MJE13001 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR , =0 IC=1mA, IB=0 IE=100 A, IC=0 IE=100 mA VCB=600V,IE=0A VCE=400V, IB=0 VEB=7V, IC=0A VCE=20 V, IC Unisonic Technologies
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TRANSISTOR 2025 npn transistor 400V
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON POWER TRANSISTOR FEATURES NPN SILICON TRANSISTOR * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING , Current NPN SILICON TRANSISTOR RATINGS UNIT 400 V 600 V 7 V 200 mA SOT-89 550 Collector Power , TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collecter Current,IC (mA) Saturation Voltage,VBE , (SAT) VBE(SAT) fT tS tF TEST CONDITIONS IC=100 A, IE=0 IC=1mA, IB=0 IE=100 A, IC=0 IE=100 mA VCB=600V Unisonic Technologies
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TO-92 mje13001 MJE13001 TO92 1015 to-92
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ï , NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Capacitance,COB (pF) Saturation Voltage,VBE , © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-088.B MJE13001-P  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO Unisonic Technologies
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MJE13001L-P- MJE13001G-P-
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING , Unisonic Technologies Co., Ltd 1 of 3 QW-R201-088.C MJE13001-P NPN SILICON TRANSISTOR ABSOLUTE , 55-60 K 60-65 L 65-70 2 of 3 QW-R201-088.C MJE13001-P NPN SILICON TRANSISTOR , =100 μA, IC=0 IE=100 mA VCB=600V,IE=0A VCE=400V, IB=0 VEB=7V, IC=0A MIN TYP MAX UNIT V 600 400 Unisonic Technologies
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Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION , Tape Box Bulk 1 of 3 QW-R201-055.H MJE13001 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM , 55-60 K 60-65 L 65-70 2 of 3 QW-R201-055.H MJE13001 NPN SILICON TRANSISTOR , =100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 IE=100 mA VCB=600V, IE=0A VCE=400V, IB=0 VEB=7V, IC=0A MIN Unisonic Technologies
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Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON POWER TRANSISTOR FEATURES NPN SILICON TRANSISTOR * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING , Current NPN SILICON TRANSISTOR RATINGS UNIT 400 V 600 V 7 V 200 mA SOT-89 550 Collector Power , TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collecter Current,IC (mA) Saturation Voltage,VBE , (SAT) VBE(SAT) fT tS tF TEST CONDITIONS IC=100 A, IE=0 IC=1mA, IB=0 IE=100 A, IC=0 IE=100 mA VCB=600V Unisonic Technologies
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C 2025
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ï , Technologies Co., Ltd 1 of 3 QW-R221-023.B MJE13001-Q  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM , NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Capacitance,COB (pF) Saturation Voltage,VBE , =1mA, IB=0 IE=100μA, IC=0 IE=100 mA VCB=600V, IE=0A VCE=400V, IB=0 VEB=7V, IC=0A MIN TYP MAX 600 Unisonic Technologies
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MJE13001G-Q- MJE13001L-Q-
Abstract: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING , Bulk Tape Box Bulk 1 of 3 QW-R201-088,A MJE13001-P NPN SILICON TRANSISTOR ABSOLUTE , 60-65 L 65-70 2 of 3 QW-R201-088,A MJE13001-P NPN SILICON TRANSISTOR Capacitance,COB , =100 μA, IE=0 IC=1mA, IB=0 IE=100 μA, IC=0 IE=100 mA VCB=600V,IE=0A VCE=400V, IB=0 VEB=7V, IC Unisonic Technologies
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MJE13001-PL- MJE13001-PG-
Abstract: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001 , 2 3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor , IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=600V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE SeCoS
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3DD13001-B
Abstract: TSC873 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2 , mA uA V V V V uS uS uS 1/5 Version: C12 TSC873 NPN Silicon Planar High Voltage Transistor , ) 600V 400V 1A 0.5V @ IC / IB = 500mA / 100mA Features High BVceo, BVcbo High current gain , = 1mA IE = 100uA VCB=600V VCE = 400V VEB=8V IC = 500mA, IB = 100mA IC = 1A, IB = 250mA IC = 500mA , Ic Figure 6. Safety Operation Area 2/5 Version: C12 TSC873 NPN Silicon Planar High Taiwan Semiconductor
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TRANSISTOR 0835 transistor 600v. 1a. to 92 tsc873ct TSC873CT TSC873CW
Abstract: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2 , MHz pF 1/5 Version: D12 TSC966 NPN Silicon Planar High Voltage Transistor Electrical , . Safety Operation Area 2/5 Version: D12 TSC966 NPN Silicon Planar High Voltage Transistor TO , 3/5 Version: D12 TSC966 NPN Silicon Planar High Voltage Transistor SOT-223 Mechanical , 4/5 Version: D12 TSC966 NPN Silicon Planar High Voltage Transistor Notice Specifications Taiwan Semiconductor
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TSC966CT TSC966CW
Abstract: TSC873 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 Pin Definition: 1. Emitter 2 , TSC873 NPN Silicon Planar High Voltage Transistor Electrical Characteristics Curve (Ta = 25oC, unless , : B12 TSC873 NPN Silicon Planar High Voltage Transistor TO-92 Mechanical Drawing DIM A B C D , TSC873 NPN Silicon Planar High Voltage Transistor SOT-223 Mechanical Drawing DIM A B C D E F G H I , Version: B12 TSC873 NPN Silicon Planar High Voltage Transistor Notice Specifications of the Taiwan Semiconductor
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NPN Transistor 1A 400V to - 92 B12 IC marking code NPN TO92 400V
Abstract: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 Pin Definition: 1. Emitter 2 , TSC966 NPN Silicon Planar High Voltage Transistor Figure 1. Static Characteristics Figure 2. DC Current , . Safe Operating Area 2/5 Version: B12 TSC966 NPN Silicon Planar High Voltage Transistor TO , 3/5 Version: B12 TSC966 NPN Silicon Planar High Voltage Transistor SOT-223 Mechanical , 4/5 Version: B12 TSC966 NPN Silicon Planar High Voltage Transistor Notice Specifications Taiwan Semiconductor
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NPN Transistor TO92 300ma NPN Transistor TO92 400V 300ma A3 SOT223
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