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MUN5214T1G ON Semiconductor NPN Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
SMUN5214T1G ON Semiconductor NPN Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL

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Part : MUN5214T1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 46,000 Best Price : €0.0092 Price Each : €0.0158
Part : MUN5214T1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0133 Price Each : $0.0153
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Part : SMUN5214T1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 54,000 Best Price : €0.0105 Price Each : €0.0181
Part : SMUN5214T1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 12,000 Best Price : €0.0411 Price Each : €0.0954
Part : SMUN5214T1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0349 Price Each : $0.0370
Part : MUN5214T1G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 9,922 Best Price : $0.0320 Price Each : $0.15
Part : MUN5214T1G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : $0.0180 Price Each : $0.1610
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Part : MUN5214T1 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 39,000 Best Price : $0.04 Price Each : $0.05
Part : MUN5214T1G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 672,000 Best Price : $0.03 Price Each : $0.04
Part : SMUN5214T1G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,197 Best Price : $0.04 Price Each : $0.05
Part : MUN5214T1 Supplier : ON Semiconductor Manufacturer : America II Electronics Stock : 2,974 Best Price : - Price Each : -
Part : MUN5214T1 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 2,749 Best Price : - Price Each : -
Part : MUN5214T1G Supplier : - Manufacturer : Chip One Exchange Stock : 12,004 Best Price : - Price Each : -
Part : MUN5214T1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 9,672 Best Price : $0.04 Price Each : $0.1840
Part : MUN5214T1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 9,672 Best Price : £0.0338 Price Each : £0.1350
Part : MUN5214T1G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 252 Best Price : $0.02 Price Each : $0.04
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MUN5214T1 Datasheet

Part Manufacturer Description PDF Type
MUN5214T1 Motorola NPN SILICON BIAS RESISTOR TRANSISTORS Original
MUN5214T1 On Semiconductor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Original
MUN5214T1 On Semiconductor Bias Resistor Transistor NPN Original
MUN5214T1 On Semiconductor MUN5214 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN, BIP General Purpose Small Signal Original
MUN5214T1 ON Semiconductor Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 202MW SC70-3 Original
MUN5214T1G On Semiconductor NPN SILICON BIAS RESISTOR TRANSISTORS Original
MUN5214T1G On Semiconductor Small Signal Bias Resistor Transistor SC70, (SOT323) NPN 50V; Package: SC-70 (SOT-323) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original
MUN5214T1G On Semiconductor MUN5214 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN, BIP General Purpose Small Signal Original
MUN5214T1G ON Semiconductor Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 202MW SC70-3 Original

MUN5214T1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1(2) MUN5216T1 , ) Emitter-Base Cutoff Current (V e b = 6-0 V, lc = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 , (sat) v OL MUN5211IT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 , ) MUN5216T1 MUN5233T1 Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 -
OCR Scan
SC-7CI/SOT-323 SC-70/SOT-323 SC-7Q/SOT-323
Abstract: MUN5212T1 MUN5213T1 MUN5214T1 Thermal Clad is a trademark of the Bergquist Company Preferred devices are , MUN5212T1 MUN5213T1 MUN5214T1 'CBO 'CEO 'EBO - - - - - Symbol Min Typ Max U nit - , MUN5212T1 MUN5213T1 MUN5214T1 Vdc Vdc hFE 35 60 80 80 - 60 100 140 140 - - , 1.0 kQ) VCE(sat) 0.25 Vdc VOL MUN5211T1 MUN5212T1 MUN5214T1 MUN5213T1 v OH R1 - - - - , 5-0 V, Vß = 0.5 V, RL = 1.0 k£2) Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5211T1 -
OCR Scan
MUN5211T1/D UN5211T1 UN5212T1 UN5213T1 UN5214T1 2PHX31155F-0
Abstract: MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1(2) MUN5216T1(2) MUN5230T1(2) MUN5231T1(2) MUN5232T1(2 , mAdc â'" MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , CHARACTERISTICS^) DC Current Gain (Vc e = 10 V, lc = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , OL MUN5211IT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 , £2) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 -
OCR Scan
Abstract: VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (Note 3.) MUN5216T1 (Note 3.) MUN5230T1 , Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 , CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , /MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211T1 MUN5212T1 MUN5214T1 , MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 ON Semiconductor
Original
marking 8A sot3 70/SOT
Abstract: T j. Tstg DEVICE MARKING AND RESISTOR VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , MUN5212T1 MUN5213T1 MUN5214T1 'CBO 'CEO 'EBO - - - Symbol Min Typ Max Unit - - - , ) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 hFE 35 60 80 80 - 60 100 140 140 - - Collector-Em itter , ) VCE(sat) 0.25 Vdc VOL MUN5211T1 MUN5212T1 MUN5214T1 MUN5213T1 VOH R1 - - Vdc - - - , = 0.5 V, RL = 1.0 k£2) Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 M UN5211T1/MUN5212T1/M -
OCR Scan
marking RK sot323 N5211 N5212 N5211T1 N5212T1 N5213T1 5214T1 2PHX31155F-
Abstract: MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1(2) MUN5216T1(2) MUN5230T1(2) MUN5231T1(2) MUN5232T1(2 , nAdc mAdc MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 , Gain (Vc e = 10 V, lc = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 , /MUN5234T1 Output Voltage (on) (VCC = 5 0 V, VB = 2.5V, R(_ = 1.0 k ii) MUN52111T1 MUN5212T1 MUN5214T1 , Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 -
OCR Scan
Abstract: MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (2.) MUN5216T1 (2.) MUN5230T1 (2.) MUN5231T1 (2.) MUN5232T1 (2 , (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , = 2.5 V, RL = 1.0 k) MUN5211lT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 ON Semiconductor
Original
Abstract: / Tape & Reel MUN5214T1 SC-70/SOT-323 8D 10 47 3000 / Tape & Reel MUN5214T1G SC , = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , 5.5 V, RL = 1.0 kW) VB = 4.0 V, RL = 1.0 kW) VOL MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 , ) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor R1 MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 ON Semiconductor
Original
marking code MS SOT323 MARKING MP SOT-323 SOT-323 8P NPN TRANSISTOR SC-70 8J sot 23 sot-323 logic
Abstract: VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (Note 8) MUN5216T1 (Note 8) MUN5230T1 , MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 , , IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , , VB = 2.5 V, RL = 1.0 k) MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , , RL = 1.0 k) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 ON Semiconductor
Original
SMD310
Abstract: ) 8C 47 47 3000 / Tape & Reel MUN5214T1 SC-70/SOT-323 8D 10 47 3000 / Tape & Reel MUN5214T1G SC-70/SOT-323 (Pb-Free) 8D 10 47 3000 / Tape & Reel MUN5215T1 , Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G , ) (IC = 10 mA, IB = 1 mA) MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G MUN5215T1, G , , G MUN5237T1, G VCE(sat) MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G MUN5236T1, G ON Semiconductor
Original
MUN5211T1G MUN5212T1G MUN5213T1G
Abstract: VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1(2) MUN5216T1(2) MUN5230T1(2 , MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOL MUN5211lT1 MUN5212T1 MUN5214T1 MUN5215T1 , MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 Motorola
Original
Abstract: VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (Note 3.) MUN5216T1 (Note 3.) MUN5230T1 , Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 , CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , /MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211T1 MUN5212T1 MUN5214T1 , MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 ON Semiconductor
Original
marking code IC 8c
Abstract: / Tape & Reel MUN5214T1 SC-70/SOT-323 8D 10 47 3000 / Tape & Reel MUN5214T1G SC , 0.2 0.2 0.2 Characteristic OFF CHARACTERISTICS MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 , MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 , MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 ON Semiconductor
Original
Abstract: Reel MUN5214T1 SC­70/SOT­323 8D 10 47 3000/Tape & Reel MUN5215T1 (Note 3.) SC , 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 , MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 , MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5213T1 , MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 ON Semiconductor
Original
transistor sc 308
Abstract: MUN5214T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V(BR)CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.140 @I(C) (A) (Test Condition)5.0m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)10m @I(B) (A) (Test Condition American Microsemiconductor
Original
Abstract: MRF947t1 -Collector Device NPN MUN5211T1 MUNS212T1 MUN5213T1 MUN5214T1 PNP MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 NPN 8A 8B -
OCR Scan
marking CJD A6 marking marking 6B SC-70/SQT-323 MRF947T1 MRF947BT1 MRF957T1 M1MA141KT1 BAS16WT1
Abstract: MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 ON Semiconductor
Original
transistor digital 47k 22k PNP NPN MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1
Abstract: +150 260 10 DEVICE MARKING AND RESISTOR VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , ) MUN5211lT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 , Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 ON Semiconductor
Original
2771 040 0002 level shifter 2N5401 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1
Abstract: MRF5812M MBD914L MUN5214T1 M U RB1620CT M U RB1620CT M U RB1620CT M U RB 1660CT M U RB 1660CT M URD320 MURD320 M URD320 M , MUN5113T1 MUN5114T1 MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 M U RB 1610CT M URB1615T M URB1620T M URB1640T M -
OCR Scan
TLP655G MSC1621 Sj85a cr708A 2SD601R BD283 B20n 5SMC15AT3 5SMC16AT3 5SMC18AT3 5SMC20AT3 5SMC22AT3 5SMC24AT3
Abstract: N1222 DDTC124EUA MUN5213DW1T1 DDC144EU MUN5213T1 DDTC144EUA MUN5214DW1T1 DDC114YU MUN5214T1 DDTC114YUA Diodes
Original
RT1P144C transistor cross reference N10 SOT363 RT1N241M N06 TRANSISTOR Transistor ROHM N14 SOT-363 marking n10 SC-59 SC-74 T1P141M RT1P141U RT1P144M
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