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Part : MUN5212T1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0114 Price Each : $0.0120
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Part : MUN5212T1 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 110,724 Best Price : $0.04 Price Each : $0.05
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MUN5212T1 Datasheet

Part Manufacturer Description PDF Type
MUN5212T1 Motorola NPN SILICON BIAS RESISTOR TRANSISTORS Original
MUN5212T1 On Semiconductor Bias Resistor Transistor NPN Original
MUN5212T1 On Semiconductor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Original
MUN5212T1 On Semiconductor Small Signal Bias Resistor Transistor SC70, (SOT323) NPN 50V; Package: SC-70 (SOT-323) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original
MUN5212T1G On Semiconductor NPN SILICON BIAS RESISTOR TRANSISTORS Original
MUN5212T1G On Semiconductor SS SC70 BR XSTR NPN 50V; Package: SC-70 (SOT-323) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original
MUN5212T1G On Semiconductor MUN5212 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN, BIP General Purpose Small Signal Original

MUN5212T1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MUN5212T1 MUN5213T1 MUN5214T1 Thermal Clad is a trademark of the Bergquist Company Preferred devices are , MUN5212T1 MUN5213T1 MUN5214T1 'CBO 'CEO 'EBO - - - - - Symbol Min Typ Max U nit - , MUN5212T1 MUN5213T1 MUN5214T1 Vdc Vdc hFE 35 60 80 80 - 60 100 140 140 - - , 1.0 kQ) VCE(sat) 0.25 Vdc VOL MUN5211T1 MUN5212T1 MUN5214T1 MUN5213T1 v OH R1 - - - - , 5-0 V, Vß = 0.5 V, RL = 1.0 k£2) Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5211T1 -
OCR Scan
MUN5211T1/D SC-70/SOT-323 UN5211T1 UN5212T1 UN5213T1 UN5214T1
Abstract: MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1(2) MUN5216T1(2) MUN5230T1(2) MUN5231T1(2) MUN5232T1(2 , mAdc â'" MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , CHARACTERISTICS^) DC Current Gain (Vc e = 10 V, lc = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , OL MUN5211IT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 , £2) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 -
OCR Scan
Abstract: MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1(2) MUN5216T1 , ) Emitter-Base Cutoff Current (V e b = 6-0 V, lc = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 , (sat) v OL MUN5211IT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 , ) MUN5216T1 MUN5233T1 Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 -
OCR Scan
SC-7CI/SOT-323 SC-7Q/SOT-323
Abstract: VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (Note 3.) MUN5216T1 (Note 3.) MUN5230T1 , Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 , CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , /MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211T1 MUN5212T1 MUN5214T1 , MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 ON Semiconductor
Original
marking 8A sot3 70/SOT
Abstract: T j. Tstg DEVICE MARKING AND RESISTOR VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , MUN5212T1 MUN5213T1 MUN5214T1 'CBO 'CEO 'EBO - - - Symbol Min Typ Max Unit - - - , ) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 hFE 35 60 80 80 - 60 100 140 140 - - Collector-Em itter , ) VCE(sat) 0.25 Vdc VOL MUN5211T1 MUN5212T1 MUN5214T1 MUN5213T1 VOH R1 - - Vdc - - - , = 0.5 V, RL = 1.0 k£2) Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 M UN5211T1/MUN5212T1/M -
OCR Scan
marking RK sot323 N5211 N5212 N5211T1 N5212T1 N5213T1 5214T1 2PHX31155F-
Abstract: 3000 / Tape & Reel MUN5212T1 SC-70/SOT-323 8B 22 22 3000 / Tape & Reel MUN5212T1G , = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , 5.5 V, RL = 1.0 kW) VB = 4.0 V, RL = 1.0 kW) VOL MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 , ) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor R1 MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 ON Semiconductor
Original
marking code MS SOT323 MARKING MP SOT-323 SOT-323 8P NPN TRANSISTOR SC-70 8J sot 23 sot-323 logic
Abstract: MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1(2) MUN5216T1(2) MUN5230T1(2) MUN5231T1(2) MUN5232T1(2 , nAdc mAdc MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 , Gain (Vc e = 10 V, lc = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 , /MUN5234T1 Output Voltage (on) (VCC = 5 0 V, VB = 2.5V, R(_ = 1.0 k ii) MUN52111T1 MUN5212T1 MUN5214T1 , Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 -
OCR Scan
Abstract: MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (2.) MUN5216T1 (2.) MUN5230T1 (2.) MUN5231T1 (2.) MUN5232T1 (2 , (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , = 2.5 V, RL = 1.0 k) MUN5211lT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 ON Semiconductor
Original
Abstract: VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (Note 8) MUN5216T1 (Note 8) MUN5230T1 , MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 , , IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , , VB = 2.5 V, RL = 1.0 k) MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 , , RL = 1.0 k) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 ON Semiconductor
Original
SMD310
Abstract: -323 (Pb-Free) 8A 10 10 3000 / Tape & Reel MUN5212T1 SC-70/SOT-323 8B 22 22 3000 / Tape & Reel MUN5212T1G SC-70/SOT-323 (Pb-Free) 8B 22 22 3000 / Tape & Reel , Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G , ) (IC = 10 mA, IB = 1 mA) MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G MUN5215T1, G , , G MUN5237T1, G VCE(sat) MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G MUN5236T1, G ON Semiconductor
Original
MUN5211T1G MUN5213T1G MUN5214T1G
Abstract: VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1(2) MUN5216T1(2) MUN5230T1(2 , 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5211T1 MUN5212T1 , CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOL MUN5211lT1 MUN5212T1 MUN5214T1 MUN5215T1 , 0.21 - 1.0 0.1 0.47 1.2 0.25 - 1.2 0.185 0.56 Input Resistor MUN5211T1 MUN5212T1 Motorola
Original
Abstract: VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (Note 3.) MUN5216T1 (Note 3.) MUN5230T1 , Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 , CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , /MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211T1 MUN5212T1 MUN5214T1 , MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 ON Semiconductor
Original
marking code IC 8c
Abstract: ) Shipping MUN5211T1 SC­70/SOT­323 8A 10 10 3000/Tape & Reel MUN5212T1 SC­70/SOT , 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 , CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 , , VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL MUN5211T1 MUN5212T1 , MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 ON Semiconductor
Original
transistor sc 308
Abstract: 3000 / Tape & Reel MUN5212T1 SC-70/SOT-323 8B 22 22 3000 / Tape & Reel MUN5212T1G , 0.2 0.2 0.2 Characteristic OFF CHARACTERISTICS MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 , MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 , MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 ON Semiconductor
Original
Abstract: MUN5212T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V(BR)CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.60 h(FE) Max. Current gain.100 @I(C) (A) (Test Condition)5.0m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)10m @I(B) (A) (Test Condition American Microsemiconductor
Original
Abstract: MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 MUN5211T1 MUN5212T1 MUN5213T1 ON Semiconductor
Original
transistor digital 47k 22k PNP NPN MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1
Abstract: +150 260 10 DEVICE MARKING AND RESISTOR VALUES Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 , Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 , ) MUN5211lT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 , Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 ON Semiconductor
Original
2771 040 0002 level shifter 2N5401 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1
Abstract: MUN5212T1 PDTC124EU SMBT2222 PMBT2222 MUN5213T1 PDTC144EU SMBT2222A PMBT2222A Philips Semiconductors
Original
PMBT2369 BC517 "cross reference" 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference 2n2925 cross reference 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904
Abstract: N1222 MUN5134T1 DDTA124XUA MUN5211DW1T1 DDC114EU MUN5211T1 DDTC114EUA MUN5212DW1T1 DDC124EU MUN5212T1 Diodes
Original
RT1P144C transistor cross reference N10 SOT363 RT1N241M N06 TRANSISTOR Transistor ROHM N14 SOT-363 marking n10 SC-59 SC-74 T1P141M RT1P141U RT1P144M
Abstract: MRF5812M MBD914L (Continued) MOTOROLA NEAREST REPLACEMENT MUN5112T1 MUN5113T1 MUN5114T1 MUN5211T1 MUN5212T1 MUN5213T1 , MUN5113T1 MUN5114T1 MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 M U RB 1610CT M URB1615T M URB1620T M URB1640T M -
OCR Scan
TLP655G MSC1621 Sj85a cr708A 2SD601R BD283 B20n 5SMC15AT3 5SMC16AT3 5SMC18AT3 5SMC20AT3 5SMC22AT3 5SMC24AT3
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