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Part Manufacturer Description PDF & SAMPLES
S1R72V17B00B200 Epson Electronics America Inc IC,BUS CONTROLLER,BGA,81PIN
S1R72V17B00A200 Epson Electronics America Inc IC,BUS CONTROLLER,BGA,60PIN
S1S60000F00A500 Epson Electronics America Inc 1 CHANNEL(S), 5.5Mbps, LOCAL AREA NETWORK CONTROLLER, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, QFP-100
S1D13A04B00B200 Epson Electronics America Inc IC LCD COMPANION 160KB 121-PFBGA
S1D13505F00A200 Epson Electronics America Inc CRT OR FLAT PNL GRPH DSPL CTLR, PQFP128, QFP15-128
S1R72U16B08E200 Epson Electronics America Inc UNIVERSAL SERIAL BUS CONTROLLER, PBGA81, PLASTIC, FBGA-81

MOSFET TRANSISTOR SMD MARKING CODE nh

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . Marking Table 4. Marking codes Type number Marking code[1] PMV160UP NH% [1] % = , Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V RDSon rated  Trench MOSFET technology , Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 â'" 6 December 2011 , MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name TY Semiconductor
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Abstract: Partnumber PHN203 marking/packing Standard Marking * Reel Pack, SMD, 13" package device status SOT96 , transistor FEATURES · Dual device · Low threshold voltage · Fast switching · Logic level compatible · , enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has , MOSFET1 Drain current per MOSFET (both MOSFETs conducting)1 Drain current per MOSFET (pulse peak value , specification Dual N-channel enhancement mode TrenchMOSTM transistor THERMAL RESISTANCES SYMBOL PARAMETER Philips Semiconductors
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catalog mosfet Transistor smd MOSFET TRANSISTOR SMD MARKING CODE A1 mosfet so8 smd sot96-1
Abstract: as for integrated circuits. The marking of the components (type code) also refers to pin 1, thus , -323 SMD package, for example, has been designed "upside down" in comparison with the conventional SOT , , Si RF, switching high-voltage, Darlington, MOSFET, SIPMOS, digital transistors Single, double, PIN, Schottky, tuning diodes SOT-143 SOT-343 MOSFET, GaAs-FET, GaAs MMIC, Si RF , specific design makes them ideal for RF, control or switching functions. Miniaturization of SMD packages Siemens
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TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363
Abstract: : Appendix F: Application of RF Switch BF1107/8 Mosfet page: 70-80 BGA2715-17 general purpose , Frequency Division Multiplex Time Division Multiplex Access Code Division Multiplex Access Mobile Systems , input RF short-bias PA PA, Supply RF short Manufacturer Order Code Order source Philips , Code Order source GRP1555 C1H 2R7 CZ01E GRM21 BR60J 106 KE19B GRP155 R71H 102 KA01E GRM188 , soldering point of pin 4. Transistor mounted on a FR4 printed-circuit board. Refer to SOT323 standard Philips Components
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ASR-10SS Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT marking code C1H mmic murata filter cfm 455 k BGA6589
Abstract: North Ordering code American (12NC) type number Marking/Packing Package Device status Discretes packing , Standard Marking SOT404 9340 417 00118 * Reel Pack, SMD, (D2-PAK) Full production order this 13" product , Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface , Control of power MOSFET and supply of overload protection circuits derived from input Lower operating Philips Semiconductors
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smd transistor marking A5 BUK108-50DL BUK10850DL 51LPC
Abstract: , availability and ordering North Ordering code American (12NC) type number Marking/Packing Package Device , top Similar products Standard Marking SOT404 9340 417 70118 * Reel Pack, SMD, (D2-PAK) Full , Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface , Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on Philips Semiconductors
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BUK110-50GL BUK11050GL
Abstract: North Ordering code American (12NC) type number Marking/Packing Package Device status Discretes packing , Standard Marking SOT404 9340 417 30118 * Reel Pack, SMD, (D2-PAK) Full production order this 13" product , Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface , Control of power MOSFET and supply of overload protection circuits derived from input Lower operating Philips Semiconductors
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BUK109-50DL BUK10950DL
Abstract: ) PNP Use 20 Marking Indication Zener diode and resistance built-in Transistor , circuit Marking Indication A1 A3 A2 A3 A2 A3 A5 Selector Guide MOS MOSFET , Tr2 Marking Indication NB NF N1 N2 N3 NA NC NE ND NG N4 NH NJ N5 NK NM NN , of the Transistor 2 Outline 7 Characteristic Map 8 Selector Guide 12 Packing Unit 26 , Location Overseas Sales Offices and Production Facilities 37 1 The Type Name of the Transistor Isahaya Electronics
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marking CODE n3 6PIN INK0001AC RT8H marking code NJ SMD Transistor 2SA798 equivalent smd transistor marking A7 p7 2SA1235 SC-70 SC-59 SC-62SOT-89 SC-75A SC-90
Abstract: number 4. Marking Table 4. Marking codes Marking code[1] NH% Type number PMV160UP [1] % = , SO T2 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 - 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 3 1.2 Features and benefits 1.8 V RDSon rated Very fast switching Trench MOSFET NXP Semiconductors
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smd TRANSISTOR code marking 05 sot23
Abstract: number 4. Marking Table 4. Marking codes Marking code[1] NH% Type number PMV160UP [1] % = , SO T2 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 1 - 7 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 3 1.2 Features and benefits 1.8 V RDSon rated Very fast switching Trench MOSFET NXP Semiconductors
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Abstract: safeguards the CPU during extreme situations including power up with a shorted upper MOSFET, shorting of an upper MOSFET during normal operation, and loss of the voltage feedback signal, COREFB+. Features http://onsemi.com MARKING DIAGRAMS LQFP-32 FT SUFFIX CASE 873A NCP5331 AWLYYWW 32 1 32 1 NCP5331 AWLYYWW , http://onsemi.com 2 R1 15 7.0 V +12 VPWR L3 300 nH + +12 V C1 10 uF R2 910 Q7 MMBT2132LT3 R5 3 , 7.5 k VCORE L1 825 nH R6 2 VCORE R3 56 1 24 23 22 21 20 19 18 17 2 CF1 1.0 nF CA1 0.01 uF ON Semiconductor
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GE scr C5v NCP5331/D
Abstract: safeguards the CPU during extreme situations including power up with a shorted upper MOSFET, shorting of an upper MOSFET during normal operation, and loss of the voltage feedback signal, COREFB+. Features http://onsemi.com MARKING DIAGRAM LQFP-32 FT SUFFIX CASE 873A A WL, L YY, Y WW, W NCP5331 AWLYYWW 32 1 = , VID0 VID1 VID2 VID3 VID4 VCCL2 Publication Order Number: NCP5331/D R1 15 7.0 V +12 VPWR L3 300 nH , uF CP1 1.0 uF CVCC 1.0 uF D2 CC2 0.1 uF RC1 7.5 k VCORE L1 825 nH R6 2 VCORE R3 56 1 24 23 ON Semiconductor
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CTX15-14771 dac IC 0808 circuit diagram
Abstract: ) scheme safeguards the CPU during extreme situations including power up with a shorted upper MOSFET, shorting of an upper MOSFET during normal operation, and loss of the voltage feedback signal, COREFB+. http://onsemi.com LQFP-32 FT SUFFIX CASE 873A MARKING DIAGRAMS NCP5331 AWLYYWWx 32 , SWNODE1 R6 2 CP1 1.0 mF L3 300 nH Q8 SWNODE2 Q7 Q6 C2 0.33 mF Q1 RCB , + CO1 L2 825 nH Q9 L1 825 nH VCORE CIN CO4 CO3 CO2 + LGND Ties to ON Semiconductor
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v729 NTD80N02 NTD60N03 NCP5331FTR2G NCP5331FTR2 CTX22
Abstract: shorted upper MOSFET, shorting of an upper MOSFET during normal operation, and loss of the voltage feedback signal, COREFB+. http://onsemi.com LQFPâ'32 FT SUFFIX CASE 873A MARKING DIAGRAMS , VID3 R4 56 L2 825 nH 17 CL 1.0 mF D4 BAT54CLT1 5 VSB CS1 0.11 mF CS2 0.1 , VID4 VCCL2 1 L1 825 nH NCP5331 RF1 3.6 k COREFB+ 32 CA1 0.01 mF VCORE , nH +12 V D3 D1 7.5 V, 5% BZX84C7V5LT3 14 R2 910 13 C1 10 mF +12 VPWR + ON Semiconductor
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Abstract: . 14 General Pro-electron type designation code fo r semiconductor devices , types: SOT52. CHARACTERISTICS RATINGS TYPE NUMBER individual total transistor device (mA) ^ g (mA) individual transistor loss (mA) min. total device - V )G (P S (V ) max , characteristics for SOT-23 and SOT-143 TYPE DESIGNATION PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices â'" as opposed to -
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BFW10 FET transistor BU508A TRANSISTOR equivalent equivalent components FET BFW10 of LCD01
Abstract: ) scheme safeguards the CPU during extreme situations including power up with a shorted upper MOSFET, shorting of an upper MOSFET during normal operation, and loss of the voltage feedback signal, COREFB , Reference Output © Semiconductor Components Industries, LLC, 2003 June, 2003 - Rev. 11 MARKING , R6 2 CP1 1.0 uF L3 300 nH Q8 SWNODE2 Q7 Q6 C2 0.33 uF Q1 RCB 6.2 k , CO1 L2 825 nH Q9 L1 825 nH VCORE CIN CO4 CO3 CO2 + LGND Ties to PGND ON Semiconductor
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ge 6065 all SMD 6 PIN IC FOR PWM smd transistor rc1 C1608X5R T50-8b
Abstract: , VTT Power Good (VTTPGD), Power Good (PWRGD), and internal MOSFET gate drivers to provide a "fully , http://onsemi.com MARKING DIAGRAM 28 28 1 CS5308 AWLYYWW SO­28L DW SUFFIX CASE 751F , CS5308GDWR28 SO­28L 1000 Tape & Reel Publication Order Number: CS5308/D CS5308 L1 300 nH +5.0 V , mF SIGGND CCS1 0.01 mF L3 825 nH Q4 GATE4 SIGGND RCS1 100 k RVTT 1.0 k CS2 , RCSREF 20 k CS REF L2 825 nH SIGGND CCMP2 0.1 mF CINPUT Electrolytics VOUT Q1 CVCC ON Semiconductor
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CS5308GDW28 FT 1609 MOSFET
Abstract: , VTT Power Good (VTTPGD), Power Good (PWRGD), and internal MOSFET gate drivers to provide a "fully , © Semiconductor Components Industries, LLC, 2006 July, 2006 - Rev. 6 1 http://onsemi.com MARKING , Reel Publication Order Number: CS5308/D CS5308 L1 300 nH +5.0 V +12 V CAMP 3.9 nF RFBK1 , 100 k RVTT 1.0 k CS2 CCS1 0.01 mF L3 825 nH Q4 GATE4 SIGGND VTT CS1 CCER , nH Q2 SIGGND RLIM1 5.76 k CCSREF 0.01 mF GATE1 SIGGND CCMP2 0.1 mF CINPUT ON Semiconductor
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Abstract: , VTT Power Good (VTTPGD), Power Good (PWRGD), and internal MOSFET gate drivers to provide a "fully , http://onsemi.com MARKING DIAGRAM 28 28 1 SO­28L DW SUFFIX CASE 751F A WL, L YY, Y WW , CS5308GDWR28 SO­28L 1000 Tape & Reel Publication Order Number: CS5308/D CS5308 L1 300 nH +5.0 V , L3 825 nH Q4 GATE4 SIGGND RCS1 100 k RVTT 1.0 k CS2 CCSREF 0.01 uF Q3 CVCCH2 , nH SIGGND CCMP2 0.1 uF SIGGND RDRP1 11.5 k CINPUT Electrolytics Q1 CVCC 1.0 uF ON Semiconductor
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rubycon capacitor
Abstract: (VTTPGD), Power Good (PWRGD), and internal MOSFET gate drivers to provide a "fully integrated solution" to , On/Off Control (through COMP Pin) · Improved Noise Immunity http://onsemi.com MARKING DIAGRAM 28 1 , : CS5308/D CS5308 L1 300 nH +5.0 V +12 V R5V 1.0 CQ1 0.1 uF Q1 CVCC 1.0 uF VFB CCMP1 3.3 nF CCMP2 0.1 , CINPUT Electrolytics RCMP1 5.62 k GATE1 Q2 L2 825 nH RLIM1 5.76 k CREF 0.1 uF RLIM2 1.0 k , 0.1 uF SIGGND RVTT 1.0 k GATE4 Q3 CCER Ceramics L3 825 nH Q4 RCSREF 20 k CS REF CCSREF 0.01 ON Semiconductor
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SMD Transistor t30 transistor SMD t30 XC5308
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