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Part Manufacturer Description PDF & SAMPLES
350566-7 TE's AMP 0.9mm2, BRASS, TIN FINISH, PCB TERMINAL
350537-6 TE's AMP 2mm2, PHOSPHOR BRONZE, GOLD (30) FINISH, WIRE TERMINAL
350582-1 TE's AMP 2 CONTACT(S), MALE, COMBINATION LINE CONNECTOR, SOLDER, ROHS COMPLIANT
350582-4 TE's AMP 2 CONTACT(S), MALE, COMBINATION LINE CONNECTOR, SOLDER, ROHS COMPLIANT
350571-1 TE's AMP 2.3mm2, BRASS, TIN FINISH, RING TERMINAL
350568-1 TE's AMP 2mm2, BRASS, TIN FINISH, RING TERMINAL

MOSFET 3505

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ) Applications Features 1. IGBT/MOSFET gate drive for inverter control 1. 8 pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. Built-in direct drive circuit for MOSFET / IGBT drive , 7.62±0.3 3.4±0.5 3.5±0.5 2 9.66±0.5 Date code 0.5±0.1 6 4 Primary side mark , 6.5±0.5 8 SHARP mark "S" 3.4±0.5 3.5±0.5 SHARP mark "S" 1.2±0.3 0.85±0.2 TYP , 4 0.26±0.1 3 ±0.5 3.5±0.5 2 0.35±0.25 1 3.5±0.5 SHARP mark "S" 1.2±0.3 Sharp
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PC923L0NSZ E64380 PC923L VDE0884 PC923L0YSZ PC923L0YIP PC923L0NS UL1577 D2-A06001EN
Abstract: direct drive circuit for MOSFET / IGBT drive (IO1P, IO2P : 0.6 A) 4. High speed response (tPHL, tPLH , 1. IGBT/MOSFET gate drive for inverter control "OPIC"(Optical IC) is a trademark of the SHARP , side mark ±0.3 3.4±0.5 3.5±0.5 2 9.66±0.5 Date code Product mass : approx. 0.55g , 2.54±0.25 0.5 7 0.85±0.2 6.5±0.5 8 SHARP mark "S" 3.4±0.5 3.5±0.5 SHARP mark "S" , Identification mark 1 Date code Primary side mark ±0.3 0.26±0.1 3.5±0.5 1.0+0.4 -0 3 Sharp
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PC923L0NSZ0F EN60747-5-2 PC923L0NIP0F PC923L0YIP0F E234 B.A DATE SHEET 2011 PC923L0YSZ0F D2-A06002EN
Abstract: compliant 1. IGBT/MOSFET gate drive for inverter control "OPIC"(Optical IC) is a trademark of the , Identification mark Date code Primary side mark 7.62±0.3 TYP. 3.05±0.5 0.5 3.4±0.5 3.5±0.5 , 7.62±0.3 0.5TYP. 7 0.85±0.2 3.4±0.5 3.5±0.5 8 1.2±0.3 0.85±0.2 6.5±0.5 1.2±0.3 , 3.5±0.5 5 4 Primary side mark 9.66±0.5 2.54±0.25 6 PC924L 6.5±0.5 PC924L 8 , 3.5±0.5 8 1.2±0.3 0.85±0.2 6.5±0.5 1.2±0.3 4. SMT Gullwing Lead-Form (VDE option) [ex Sharp
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PC924L0NSZ0F PC924L0NIP0F PC924L0YIP0F D2-A06102EN
Abstract: isolation voltage between input and output (Viso(rms) : 5.0 kV) Applications 1. IGBT/MOSFET gate drive , 7.62±0.3 Primary side mark Date code 0.5TYP. 7.62±0.3 3.4±0.5 3.5±0.5 3.05±0.5 3.05±0.5 3.4±0.5 3.5±0.5 0.5 6.5±0.5 PC924L PC924L 4 Epoxy resin 0.26±0.1 :0 to 13° Epoxy resin , PC924L 7.62±0.3 0.26±0.1 3.5±0.5 3.5±0.5 2.54±0.25 0.4 1.0+ -0 Epoxy resin 0 10.0+ -0.5 , . This photocoupler is dedicated to the use for IGBT or MOSFET Gate Drive. Please do not use this for the Sharp
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PC924 PC924L0NSZ D2-A06101EN
Abstract: . A power MOSFET and controller IC are incorporated in one package. Because few external parts are , LC5225S Package Maximum Input Voltage VBB(max) (V) 250 450 250 450 Output MOSFET RDS(ON)(max) () 2.2 6 2.2 , 140 V Characteristic Symbol IBBS Power Supply Current IBB Output MOSFET Breakdown Voltage Output MOSFET On-Resistance Body Diode Forward Voltage UVLO Threshold (Turn on) UVLO Threshold (Turn off) REG , Operation Frequency PWM Off Time Output MOSFET Rise Time Output MOSFET Fall Time Thermal Shutdown Threshold3 Sanken Electric
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LC5222D/25D LC5222S/25S LC5220 22S/25S-DS
Abstract: . A power MOSFET and controller IC are incorporated in one package. Because few external parts are , LC5222S LC5225S Package Maximum Input Voltage VBB(max) (V) 250 450 250 450 Output MOSFET RDS(ON)(max , V Characteristic Symbol IBBS Power Supply Current IBB Output MOSFET Breakdown Voltage Output MOSFET , Frequency PWM Off Time Output MOSFET Rise Time Output MOSFET Fall Time Thermal Shutdown Threshold3 Thermal , : sets peak output current of OUT pin (internal power MOSFET) for internal PWM control, enables toggling Sanken Electric
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LC5222D
Abstract: direct drive circuit for MOSFET / IGBT drive (IO(peak) : 2.5A) 4. High speed response (tPHL, tPLH : MAX , ) : 5kV) 9. Lead-free and RoHS directive compliant Q Applications 1. IGBT/MOSFET gate drive for , 7.62±0.30 TYP. 3.25±0.05 3.5±0.5 3.5±0.5 Epoxy resin 0.26±0.10 e e : 5Ý TYP. e 2.54±0.25 , Primary side mark 9.66±0.30 Factory identification mark 7.62±0.30 0.25±0.25 3.5±0.5 0.26±0.10 Epoxy Sharp
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PC925L0NSZ0F PC925L pc925 pc925l0nip0f q231 transistor yc 520 2002/95/EC D4-A09302EN
Abstract: Soldering) 3. Built-in direct drive circuit for MOSFET / IGBT drive (IO(peak) : 2.5A) 4. High speed , . IGBT/MOSFET gate drive for inverter control * "OPIC"(Optical IC) is a trademark of the SHARP , 7.62±0.30 3.25±0.05 3.5±0.5 Primary side mark 4 5 Date code 4 Factory identification , . 2.54±0.25 3.5±0.5 1.2±0.3 2. SMT Gullwing Lead-Form [ex. PC925L0NIP0F] 1.0+0.4 -0 Epoxy , identification mark 9.66±0.30 0.26±0.10 0.25±0.25 3.5±0.5 7.62±0.30 2.54±0.25 Epoxy resin Sharp
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PC925L0NUP0F PC925L0NI PC925L APPLICATION bipolar transistor 124 e inverter vf-0 high speed Photocoupler
Abstract: model No. PC925L) 2. Package resin : UL flammability grade (94V-0) Applications 1. IGBT/MOSFET , (Ideal for Flow Soldering) 3. Built-in direct drive circuit for MOSFET / IGBT drive (IO(peak) : 2.5A , side mark 7.62±0.30 0.5 TYP. 7.62 3.25±0.05 3.5±0.5 2.54±0.25 0.6±0.2 6 , . 2.54±0.25 3.5±0.5 1.2±0.3 2. SMT Gullwing Lead-Form [ex. PC925L0NIP0F] 1.0+0.4 -0 Epoxy , 0.26±0.10 0.25±0.25 3.5±0.5 7.62±0.30 2.54±0.25 Epoxy resin 0.75±0.25 10.16±0.50 12.0MAX Sharp
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E251 200 amp 120 V igbt D4-A09301EN
Abstract: 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET Table 1: General Features TYPE 2N7000 2N7002 s s s Figure 1: Package RDS(on) Id 0.35 A 0.20 A 3 2 1 VDSS 60 V 60 V < 5 (@ 10V) < 5 (@ 10V) TYPICAL RDS(on) = 1.8 @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This MOSFET is the second generation of STMicroelectronics unique "Single Feature SizeTM" strip-based , . 1.120 0.100 1.020 0.500 0.200 3.040 2.64 1.400 MIN. 35.05 0.39 34.65 11.81 3.15 110.26 82.70 47.26 51.19 STMicroelectronics
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2N7002 MARKING 2N7000 MOSFET 2N7002 di 2N7002 st codes marking st2n 2N7000G 7110469/A
Abstract: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFETâ"¢II MOSFET Table 1: General Features TYPE Figure 1: Package RDS(on) Id 60 V 60 V 2N7000 2N7002 VDSS < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This MOSFET is the second generation of STMicroelectronics unique â'Single Feature , 0.890 1.120 35.05 44.12 A1 0.010 0.100 0.39 3.94 A2 0.880 1.020 STMicroelectronics
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Abstract: 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET Table 1: General Features TYPE Figure 1: Package RDS(on) Id 60 V 60 V 2N7000 2N7002 VDSS < 5 (@ 10V) < 5 (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8 @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This MOSFET is the second generation of STMicroelectronics unique "Single Feature SizeTM" strip-based , . TYP MAX. MIN. TYP. MAX. A 0.890 1.120 35.05 44.12 A1 0.010 0.100 STMicroelectronics
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ST2N 2N7002 SOT23 2n7000 equivalents DSS SOT23 2n7000 equivalent ST2N transistor
Abstract: Integrated soft-start circuit (reduces power stress during start-up on the incorporated power MOSFET and , MOSFET, and is designed for input capacitorless applications, making it possible for systems to comply , performance-to-cost power supply. The LC5511D is intended for non-isolated designs. The incorporated MOSFET has a VDSS , ) 8­1 to MOSFET Safe Operating Area Curve. to MOSFET Avalanche Energy Derating Coefficient Curve. 3Refer to MOSFET Temperature versus Power Dissipation Curve. LC5511D-DS SANKEN ELECTRIC CO., LTD Sanken Electric
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sanken hybrid LC5500 IEC61000-3-2
Abstract: Integrated soft-start circuit (reduces power stress during start-up on the incorporated power MOSFET and , MOSFET, and is designed for input capacitorless applications, making it possible for systems to comply , performance-to-cost power supply. The LC5523D is intended for isolated designs. The incorporated MOSFET has a VDSS(min , hybrid IC onto the printed circuit board (board size 15 mm ×15 mm) 8­1 to MOSFET Safe Operating Area Curve. to MOSFET Avalanche Energy Derating Coefficient Curve. 3Refer to MOSFET Temperature versus Sanken Electric
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LC5523D-DS
Abstract: power stress during start-up on the incorporated power MOSFET and output diode) · Integrated bias assist , power MOSFET (allows simplified surge suppressing circuits) · Protection features: Overcurrent , controller and power MOSFET chips. The controller adapts the average current control method for realizing , performance-to-cost power supply. The LC5511D is intended for non-isolated designs. The incorporated MOSFET has a VDSS , hybrid IC onto the printed circuit board (board size 15 mm ×15 mm) 8­1 to MOSFET Safe Operating Allegro MicroSystems
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SSE-24680
Abstract: power stress during start-up on the incorporated power MOSFET and output diode) · Integrated bias assist , power MOSFET (allows simplified surge suppressing circuits) · Protection features: Overcurrent , controller and power MOSFET chips. The controller adapts the average current control method for realizing , performance-to-cost power supply. The LC5523D is intended for isolated designs. The incorporated MOSFET has a VDSS(min , MOSFET Safe Operating Area Curve. to MOSFET Avalanche Energy Derating Coefficient Curve. 3Refer to MOSFET Allegro MicroSystems
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SSE-24673
Abstract: power stress during start-up on the incorporated power MOSFET and output diode) · Integrated bias assist , power MOSFET (allows simplified surge suppressing circuits) · Protection features: Overcurrent , controller and power MOSFET chips. The controller adapts the average current control method for realizing , performance-to-cost power supply. The LC5513D is intended for non-isolated designs. The incorporated MOSFET has a VDSS , hybrid IC onto the printed circuit board (board size 15 mm ×15 mm) 8­1 to MOSFET Safe Operating Allegro MicroSystems
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SSE-24672
Abstract: Integrated soft-start circuit (reduces power stress during start-up on the incorporated power MOSFET and , MOSFET, and is designed for input capacitorless applications, making it possible for systems to comply , performance-to-cost power supply. The LC5523D is intended for isolated designs. The incorporated MOSFET has a VDSS(min , mm ×15 mm) 8­1 to MOSFET Safe Operating Area Curve. to MOSFET Avalanche Energy Derating Coefficient Curve. 3Refer to MOSFET Temperature versus Power Dissipation Curve. Allegro MicroSystems, Inc Allegro MicroSystems
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Abstract: Integrated soft-start circuit (reduces power stress during start-up on the incorporated power MOSFET and , MOSFET, and is designed for input capacitorless applications, making it possible for systems to comply , performance-to-cost power supply. The LC5513D is intended for non-isolated designs. The incorporated MOSFET has a VDSS , to MOSFET Safe Operating Area Curve. to MOSFET Avalanche Energy Derating Coefficient Curve. 3Refer to MOSFET Temperature versus Power Dissipation Curve. LC5513D-DS, Rev. 1 SANKEN ELECTRIC CO., LTD Sanken Electric
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Abstract: Integrated soft-start circuit (reduces power stress during start-up on the incorporated power MOSFET and , MOSFET, and is designed for input capacitorless applications, making it possible for systems to comply , incorporated MOSFET has a VDSS(min) rating of 650 V and RDS(on)(max) of 3.95 . It is capable of a maximum , board (board size 15 mm ×15 mm) 8­1 to MOSFET Safe Operating Area Curve. to MOSFET Avalanche Energy Derating Coefficient Curve. 3Refer to MOSFET Temperature versus Power Dissipation Curve Sanken Electric
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SANKEN AUDIO LC5521D LC5521D-DS
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