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Part Manufacturer Description PDF & SAMPLES
UCC27531DBVT Texas Instruments 2.5-A, 5-A, 35-VMAX VDD FET and IGBT Single Gate Driver 6-SOT-23 -40 to 140
UCC27538DBVR Texas Instruments 2.5-A, 5-A, 35-VMAX VDD FET and IGBT Single Gate Driver 6-SOT-23 -40 to 140
UCC27531DBVR Texas Instruments 2.5-A, 5-A, 35-VMAX VDD FET and IGBT Single Gate Driver 6-SOT-23 -40 to 140
UCC27538DBVT Texas Instruments 2.5-A, 5-A, 35-VMAX VDD FET and IGBT Single Gate Driver 6-SOT-23 -40 to 140
UCC27537DBVT Texas Instruments 2.5-A, 5-A, 35-VMAX VDD FET and IGBT Single Gate Driver 5-SOT-23 -40 to 140
UCC27537DBVR Texas Instruments 2.5-A, 5-A, 35-VMAX VDD FET and IGBT Single Gate Driver 5-SOT-23 -40 to 140

MC 140 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 15 Twin Transistors, Mixed & Matched Die 16 Silicon Transistor Chips 16 , bypass path LNAs +20 dBm GaAs RFIC: Low cost version of UPG2253, miniature pkg MMIC & Transistor , : 35.5 dBm POUT typ 4 NE664M04 0.4 Watt Silicon Bipolar Transistor Driver 4 NE5520279A LDMOS FET: 32 dBm POUT typ 4 NESG2101M05 120 mW SiGe Bipolar Transistor Driver 4 4 4 4 4 4 4 4 4 , Transistor LNAs (Performance @ 1GHz) 450 MHz UPD5740T6N Wideband CMOS LNA IC with bypass for mobile DTV 4 California Eastern Laboratories
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SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd 10/2M
Abstract: HIGH FREQUENCY SILICON MAXIMUM RATINGS at 25"C unless specified POWER TRANSISTOR _ 3TX002 3TX003 , °C CHARACTERISTICS at 25°C unless otherwise stated Condition 3TX002 3TX003 3TX004 Ft min 10 v, 2.5 a 150 mc 150 mc 150 mc Beta min 5 v, 1 a 40 15 15 Beta min 5 v, 5 a 30 ! 10 10 VC E max 5 A, 0.5 A 1.0 v 2.0 v 2.0 v , 140 pf 140 pf 140 pf These specifications are tentative and subject to change without prior notification. .723 .732 .312 MIN. .390 MAX. .427 .212 .433 .218 J_L. HIGH FREQUENCY SILICON POWER TRANSISTOR -
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MC 150 transistor transistor mc 140 433 Mc
Abstract: triple-diffused planar transistor of the silicon n-p-n type. This device is intended for applications in AM, FM, and CW service at frequencies up to 150 Mc. The 2N3229 utilizes a new stud-mounted package which is , , VEQ0. . 105 max. volts 60 max. volts 105 max. volts 4 max. vol ts 2. 5 max. amperes TRANSISTOR , (P0UT): 15 w min. at 50 Mc 5 w m i n. at 150 Mc High Voltage Ratings: VCB0 = = 105 vol ts max. VCEV = , ) 500 2.5 amp - 1 volt Feedback Capacitance (Measured at 140 Kc) Cb'c 30 0 - 20 pf RF Power Output -
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transistor a200 RCA TO60 TRANSISTORS RCA-2N3229 150-M I2045AS 01AMETER
Abstract: micro servo 9g . 135 21 Communication IC . 140 · 17K Series , . 133 Analog Master . 134 ­i­ 6. Transistor , . 235 Transistor . 170 Surface Mount , /Application . 180 Field Effect Transistor , . 189 Transistor with Internal Resistor . 196 Transistor for Array NEC
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201 Zener diode uPD72123 infrared sensor TSOP - 1836 2pin 4 MHz crystal Small DIP 2SC4333 NEC 10F triac V20HL V25HS V30HL V30MX V35HS V40HL
Abstract: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8 Packages 9 Index (Quick Reference by Type Number) 10 Oct. 1995 Microcomputer 4-Bit Single Chip Microcomputer Microcomputer 1 4-Bit Single Chip Microcomputer . 2 NEC
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uPC2002 uPC2581 uPA67C uPB582 uPC317 2P4M PIN DIAGRAM PD7500 PD1700 PD6133 8/16-B S-18322 699499F
Abstract: Transistor Chips 12 Oscillator Transistors 12 Switching Transistors 12 , Transistor Power Amplifiers 450 MHz 915 MHz 2.4 GHz UPG2118K + 31.5 dBm Three Stage GaAs MMIC , NE5520379A 3 watt LDMOS FET: 35.5 dBm POUT typ NE664M04 0.4 Watt Silicon Bipolar Transistor Driver , 5 - 6 GHz 120 mW SiGe Bipolar Transistor Driver Medium & High Power GaAs RFIC Switches , www.cel.com/rf Front End Components for UHF to 2.5 GHz continued MMIC & Transistor LNAs (Performance @ 1 California Eastern Laboratories
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NE5531 SMD M05 sot23 2013/4M
Abstract: Controllers Features: Description: · Linear Charge Management Controller: - Integrated Pass Transistor , PROG Floating Pass Transistor ON-Resistance ON-Resistance Battery Discharge Current Output , 200 180 160 140 120 100 80 60 40 20 0 -0.12 Time (us) Load Transient Response. 200 180 160 140 180 160 140 1.0 100 0.0 Charge Current , -2AC/IOT VDD = 5.2V RPROG = 10 k Time (us) FIGURE 2-14: 80 2.0 200 180 160 140 Microchip Technology
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MCP73831 MCP73832 aaf marking sot23-5 MCP7383X-2 MCP7383X-5 MCP73831/2 DS21984B-
Abstract: equivalent 3P4MH 2SD1557 uPC5102 UPD6487 2SJ 3305 UPD77529 uPD72020 MICROPROCESSOR Z80 -Bit . 71 Clock IC . 140 · 32-Bit RISC , . 140 Mass Storage IC . 128 Global Positioning , . 75 A/D Converter IC . 140 Microcontroller , . 106 Transistor . 149 MV Series , · TO-92 Type Transistor . 150 Analog Master NEC
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transistor 2p4m TRANSISTOR SOD MARKING CODE 352A Zener diode marking code N4L Z80TM V20TM V20HLTM V25TM V25HSTM V30TM
Abstract: Features: Description: · Linear Charge Management Controller: - Integrated Pass Transistor - , Complete mA Pass Transistor ON-Resistance ON-Resistance Battery Discharge Current Output Reverse , MCP73831-2AC/IOT VDD = 5.2V 1.0 0.0 20 RPROG = 10 k Time (us) 180 160 140 120 80 100 60 40 0 0 200 180 160 140 120 100 80 60 40 0 140 , 90 0.0 60 200 180 160 140 120 100 80 60 40 20 0 -0.12 200 Microchip Technology
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aae DFN marking MCP73831T MCP73831-4 Li-ion charger controller sot23-5 marking AAG C04 SOT23 DS21984A-
Abstract: Controllers Features Description: · Linear Charge Management Controller: - Integrated Pass Transistor , 0.15 2 uA PROG Floating Pass Transistor ON-Resistance ON-Resistance Battery Discharge , 180 160 140 120 100 80 60 40 20 0 -0.12 Time (us) DS21984D-page 8 Load Transient Response. 200 180 160 140 120 80 180 200 MCP73831-2AC/IOT VDD , MCP73831-2AC/IOT VDD = 5.2V RPROG = 10 k 1.0 200 180 160 140 120 100 80 60 Microchip Technology
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SOT23 marking code AAR 2ati MCP7383X microchip application notes MP3 DS21984D-
Abstract: Controllers Features Description: · Linear Charge Management Controller: - Integrated Pass Transistor , 0.15 2 uA PROG Floating Pass Transistor ON-Resistance ON-Resistance Battery Discharge , 180 160 140 120 100 80 60 40 20 0 -0.12 Time (us) DS21984C-page 8 Load Transient Response. 200 180 160 140 120 80 180 200 MCP73831-2AC/IOT VDD , MCP73831-2AC/IOT VDD = 5.2V RPROG = 10 k 1.0 200 180 160 140 120 100 80 60 Microchip Technology
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3DG 130 aae sot-23 marking AAK marking code JC51-7 DS21984C-
Abstract: 240 210 180 150 120 90 60 30 0 0 200 180 160 140 120 100 , 0 160 6.0 (V) 0.30 (V) 0.35 (A) 140 2-17: (180 mAh ) (mA , 140 120 100 80 60 40 0 40 MCP73831-2AC/IOT V DD = 5.2V R PROG = 10 k 0.0 , 5.0 (V) 0.00 6.0 (mA) 0.05 10 (V) 0.10 12 (us) 140 2-16: 14 , Ceramic 60 200 180 160 140 120 100 80 60 40 0 20 -0.20 40 -0.30 Microchip Technology
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MCP73862 AAG EEPROM 2ac SOT23-5 mosfet 4433 MCP7383X-4 MC TRANSISTOR SOT23 DS21984B
Abstract: Fig.3 TYPICAL LARGE-SIGNAL OPERATION, CLASS-C SERVICE, 50 MC 20 10 60 80 IOO 120 140 RF POWER INPUT , planar transistor of the silicon n-p-n type intended for use in RF amplifiers in military and industrial , ^' â'¢ 4 max. Collector Current (Iq). 0.5 max. Transistor Dissipation (Pf): At case temperatures , minimum at 50 Mc; 0.4 watt minimum at 150 Mc â'¢ High col lector-to-emitter voltage ratings â'" VCEX = 85 volts; VcEO = 60 volts â'¢ High gain-bandwidth productâ'" 380 Mc typical â'¢ High power gain â -
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2N3118 150 watt hf transistor 12 volt 300 watt hf transistor 12 volt 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt RCA-2N3118 92CS-I2276
Abstract: Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device , . 174 ­i­ 6. Transistor/Diode/Thyristor . 175 9. Packages . 239 Transistor . 176 · Quick Reference , . 186 Field Effect Transistor . 192 · Small Signal FET . 192 · Power MOS FET . 195 Transistor with Internal Resistor NEC
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sc5 s dc 6v relay uPD7520 753XX VR10000 Series equivalent PNP for BUZ 90 transistor ESM 740 V50HL V55PI VR4100 VR4101 VR4102 VR4300
Abstract: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE » bLSBTBl ODIM?11)? 7 BUZ385 T-39-13 140 W , N AMER PHILIPS/DISCRETE ObE 3> â  bb53131 0014714 1 â  PowerMOS transistor " BUZ385 " T- May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic , transistor BUZ385 . T-39-13 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC , fall time VDD = 30 V; Id = 2,8 A; VGS = 10 V; RGS = 50 ii; Rgen = 50 n - 50 80 330 110 75 120 430 140 -
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T0218AA BUZ38S
Abstract: ; MC1460 MC1560 MC1461 MC 1561 80 20 140 70 300 50 500 150 â'¢Operating Load Current is also limited by , continuous load current up to 500 mA without use of an external power transistor. « Electronic "Shut-Down" , Temperature Stability e High Ripple Rejection = 0.002 %/V typ Single External Transistor Can Boost Load , '¢ MC1561 MC 1460 â'¢ MC 1461 ELECTRICAL CHARACTERISTICS (Tq = 25°C unless otherwise noted) (Load Current , +125°C) (0 to +75°C) (-55°C to +125°C) MC1460 MC 1560 MC 1461 MC1561 9.0 8.5 9.0 8.5 20 20 35 40 -
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MC1460r 2N3055 series voltage regulator 2n3055 voltage regulator MC1560R Motorola Mc 1461 MC1560G MC1560/MC1561 MC1460/MC1461 DDA104 TG-P10 66B1-77U
Abstract: , C, Cq are external components. Cn is a varactor diode. |â'"COMPARATOR- MC 1650 MC1651 Dual A/D , Pin 1, 16 (4) (5) iâ'"receiver- MC 1692 Quad Line Receiver (8) (9) 2 (6) (11) (10) 3 (7) (14 , Voltage Controlled Oscillator MC 1648 - â'¢225 MHz typ 150 607,632,646 Dual A/D Comparator MC 1650 70 3.5 275 620,650 Dual A/D Comparator MC1651 70 3.0 275 620,650 Binary Counter MC 1654 70 â'¢325 MHz typ 750 LJ-/ 620 Voltage-Controlled Multivibrator MC 1658 70 «150 MHz typ 125 620,648,650 Dual 4 -
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MC1650 MC1600 MC1648 MC1648 equivalent motorola application notes an532a AN-532a MC1648 internal schematic
Abstract: ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE; TRANSISTOR, PNF GERMANIUM, LOW POWER TYPE 2N1142 This spà , transistor. 1. 2 Physical dimensions. See figure 1 (modified TO-39). 1. 3 Ratings. See table I. TABLE I , characteristics Limits hFE VCE = -10 Vdc Ic 3-10 mAdc hfe VCE = -10 Vdc Iç = -10 mAdc f « 100 mc C0bo VCB = -10 Vdc h * o f = 1 mc VCE (sat) *C = -50 mAdc = -10 mAdc db El Vdc^ Min 10 10 â'" â'" Max â'" â'" 4 , -19500. 3= 3 Design; construction. and physical dimensions. - Transistor shall be of the design -
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MC 151 pnp MC 3041 MC 151 transistor Germanium Transistor VHF power TRANSISTOR PNP TO-39 MIL-S-19500/87A MIL-S-19500/87 MIL-S-19500 MLL-S-19500/87A MIL-STD-202 MIL-STD-750
Abstract: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor â  bbSBTBl 0014737 4 â , transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly , instructions for T0218AA envelopes. 473 N AMER PHILIPS/DISCRETE PowerMOS transistor DbE D â , 3800 250 100 4900 400 170 PF pF pF 50 80 330 110 75 120 430 140 ns ns ns , pad 474 - N AMER PHILIPS/DISCRETE PowerMOS transistor - ObE D bbSBTBl 00147flc f i l -
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BUZ384 00147T0 53T31 Q0147TS 0D14713
Abstract: Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon , . 183 Functional Block . 184 ­i­ 6. Transistor , . 255 Transistor . 186 Surface Mount , Hole Discrete Device Packages . 278 Field Effect Transistor , . 205 Transistor with Internal Resistor . 215 Transistor for Array NEC
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lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION C-17K V850/SA1 V850/SB1 V850/SB2 V850/SB3 V850E/MS1
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