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Part : IRFY120 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $55.8450 Price Each : $68.9770
Part : IRFY120(M) Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : IRFY120SCV Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $61.6646 Price Each : $76.2536
Part : IRFY120SCX Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $60.5972 Price Each : $74.9135
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IRFY120 Datasheet

Part Manufacturer Description PDF Type
IRFY120 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original
IRFY120 International Rectifier HEXFET Transistors Scan
IRFY120 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan
IRFY120 Semelab N-Channel Power MOSFET for HI-REL Applications, TO-220 Scan
IRFY120C Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original
IRFY120M International Rectifier HEXFET Transistors Scan
IRFY120M International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan
IRFY120SM Semelab Hermetically Sealed N-Channel Power MOSFET for Hi-Reliability Applications Scan

IRFY120

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . Table A DEVICE ALPHA DESIGNATION IRFY044 a IRFY120 b IRFY130 c IRFY140 d IRFY240 e IRFY340 f , Case Outline IRFY044ÃM) IRFY120(M) IRFY130(M) IRFY140(M) IRFY240(M) IRFY340(M) IRFY430(M) IRFY440(M , N-CHANNEL â'" Absolute Maximum Ratings IOR Parameter IRFY044 IRFY120 IRFY130 IRFY140 Unit 'D @ TC = 25 , '" V ID = 1.0mA, Vqs = 0V IRFY120 100 â'" â'" IRFY130 100 â'" â'" IRFY140 100 â'" â , Reference to 25°C, Id = 1.0mA IRFY120 â'" 0.1 â'" IRFY130 â'" 0.1 â'" IRFY140 â'" 0.1 â -
OCR Scan
IRFY9120 IRFY9130 IRFY9140 irfv120 ed 77A ED 78A IRFY9240 5545E
Abstract: p e c ific g ra p h . Table A DEVICE IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 , -473 IRFY Series Devices IOR IRFY044 20* 20 128 IRFY120 7.3 4.6 29 ±2 0 60 0.48 30 0.24 45 0.36 60 0.48 , specified) Type IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 IRFY440 IRFY9120 IRFY9130 IRFY9140 IRFY9240 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 IRFY440 IRFY9120 IRFY9130 IRFY9140 , ) Static Drain-Source On-State Resistance IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 ID -
OCR Scan
I-502 I-503
Abstract: IRFY120 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N­CHANNEL POWER MOSFET FOR HI­REL APPLICATIONS 12.70 19.05 1 2 3 100V 7.3A 0.31 FEATURES 0.89 1.14 2.54 BSC 2.65 2.75 · HERMETICALLY SEALED TO­220 METAL PACKAGE · SIMPLE DRIVE , (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/95 IRFY120 ELECTRICAL Semelab
Original
diode 73a
Abstract: ti DE » â  Ã"1331Û7 ODDOSMfl 721 - SEMELAB PLC ISMLB I IRFY120 MECHANICAL DATA Dimensions in mm O" HH 11 s 3-5 2 0 3 5 HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS FEATURES â'¢ HERMETICT0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES â'¢ SCREENING OPTIONS AVAILABLE â'¢ ALL LEADS ISOLATED FROM CASE â'¢ VDS = 100V â'¢ RdSIohI = 0-3n â'¢lâ'ž = 8A â'¢ FAST , /90 bGE D IRFY120 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter -
OCR Scan
LE17 T0220M T0220 T0220SM 300//S
Abstract: part, please contact us. Search Results Part number search for devices beginning "IRFY120" Semelab Home Datasheets are downloaded as Acrobat PDF files. Fet Products PRODUCT IRFY120 IRFY120C IRFY120C-JQR-B IRFY120-JQR-B Polarity N-Channel N-Channel N-Channel N-Channel Package TO257AB (TO220M) TO257AB Semelab
Original
130NC fet 500v 10A IRFM360 IRFM360-JQR-B IRFM044 IRFM044-JQR-B IRFM054 IRFM054-JQR-B
Abstract: 500 0.27 21 13 0.42 300 irfy044 60 0.035 20 20 2.1 60 T0-257AB irfy120 100 -
OCR Scan
JANTX2N7334 M0-036AB T0-258AA
Abstract: - N-Channel IRFY120(M) IRFY130M) IRFY140(M) IRFY240(M) IRFY340(M) IRFY430(M) IRFY440(M -
OCR Scan
IRLF110 IRLF120 IRLF130 IRFN054 IRFN150 IRFN250 SMD H21 IRFN450 IRFN350 GG101
Abstract: IRFY120 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)7.3 I(DM) Max. (A) Pulsed I(D)4.6 @Temp (øC)100# IDM Max (@25øC Amb)29 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case4.1 Thermal Resistance Junc-Amb.80 V(GS)th Max. (V)4.0 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)250u I(DSS) Max American Microsemiconductor
Original
Abstract: 0.42 0.42 300 300 300 H27 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 IRFY440 -
OCR Scan
IRFG110 2N7334 JANTXV2N7334 IRFG5110 IRFG6110 2N7336
Abstract: -213AA T n-o RR Iu o 200 /-\ 400 (v 1FIÉB · 500 Y-PAK - N-Channel IRFY120(M -
OCR Scan
IRFJ140 JO-39 IRFE130 IRFJ120 IRFJ130 IRFJ220
Abstract: specific graph. Table A DEVICE ALPHA DESIGNATION IRFV044 a IRFY120 b IRFY130 c IRFY140 d IRFY240 e , Level Options Outline IRFY044IM) 60 0.03 50 012-062 E-,EA,EB,EC,ED TO-257AA Y-PAK IRFY120(M) 100 -
OCR Scan
IRFV460 diode ED 84 660B ISFV460D TO-257AB MIL-S-19B00 PAQEI-470 T0257/HEXFET/N-C T0257/HEXFET/P-C IRFY9240IM
Abstract: 012-037 DRAFT E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED E-,EA,EB,EC,ED N-Channel Types IRFY120(M -
OCR Scan
ED 83 IRF044 IRF120 IRF130 IRF140 IRF150 IRF220
Abstract: SEMELABpIc Type_No SELECTOR GUIDE Technology Polarity MOS PRODUCTS Package VDSS RDSSon ID Pd Ju n ei998 V e r.1.1 C¡ss_pf Qg_nC Td_on Tr Td_off Tf IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250 IRFN340 IRFN350 IRFN440 IRFN450 IRFN9140 IRFN9240 IRFP150 IRFP151 IRFP152 IRFP153 IRFP450 IRFP451 IRFP452 IRFP453 IRFY044 IRFY044C IRFY120 IRFY120C IRFY130 IRFY130C -
OCR Scan
MNT-LB32N16-C4 T0254 sml1001r1avr IRFY140C IRFY240C IRFV340 IRFY340C IRFY430C IRFV440C
Abstract: T40HFL10S05-T4HFL100S05 IRGCC40 irfh25 IRFIP054 IRGBC46 IRFT003 IRKT210-16 IRL0024 IRF1644 .116 CECC QUALIFIED IRFY120(M)-IRFY440(M) . 116 CECC QUALIFIED IRFY9120(M)-IRFY9240(M -
OCR Scan
10JQ030-10JQ100 12CTQ030-12CT0045 IRF1401 IRF140-143 31D003-31D010 IRF51 100HF20-100HF160 100JB05L-100JB12L 10CTF10-10CTF40 10CTQ140 10D05-10010 10DF1100F8
Abstract: ) IRFY120(M] IRFY130(M) IRFY140(M) IRFY240(M) IRFY340(M) IRFY430(M) IRFY440(M) 60 100 100 100 200 400 500 , /N-Channel IRFY120(M) IRFY130(M) IRFY140(M) IRFY240(M) IRFY340(M) IRFY430(M) IRFY440(M) 100 100 100 200 400 -
OCR Scan
MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx IRF540 smd D 10.7 A MIL-S-19500 T0-205AF T0-254AA T0-204AA/AE
Abstract: 45 25 2 1 45 16 13 0.42 0.42 0.42 300 300 300 H27 TO-259AA IRFY044 IRFY120 IRFY130 -
OCR Scan
H24 SMD irfg9110 IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230
Abstract: IRFY120C Dimensions in mm (inches). N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 4.5A RDS(ON) = 0.3 1.0 (0.039) 2.54 (0.1) BSC 2.70 (0.106) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO257AB (TO220M -
Original
2C415 2C444 Diode 400V 5A transistor 2n1208 SML1004RGN REGULATOR IC LM7815 BD124 2C425 2C746 2N1131L 2N1132
Abstract: -213AA T n-o RR Iu o 200 /-\ 400 (v 1FIÉB · 500 Y-PAK - N-Channel IRFY120(M -
OCR Scan
FBU FAGOR 4g RCA transistor 40312 Avantek amplifier sft RCA 40461 SF126 L14B1 T0226 T0237
Abstract: 0.42 0.42 300 300 300 H27 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 IRFY440 -
OCR Scan
Transistor B0243C MZ 13001 TRANSISTOR smd diode marking WU1 semikron B60 C80 1RFP350 bd240b rca VV276