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EHA07004

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SIEMENS BBY 58-04W . BBY 58-06W Silicon Tunig Diodes Preliminary data â'¢ Excellent linearity â'¢ High Q hyperabrupt tuning diode â'¢ Low series inductance â'¢ Designed for low tuning voltage operation for VCOâ'™s in mobile communications equipment â'¢ For low frequency control elements such as TCXOs and VCXOs â'¢ Very low capacitance spread BBY 58-05W BBY 58-04W BBY 58-06W 3 o H â'¢W N * M ° 0 M * M EHA07006 EHA07004 EHA07005 ° Type -
OCR Scan
Q62702-
Abstract: BB 804 Silicon Variable Capacitance Diode 3 · For FM tuners · Monolithic chip with common cathode for perfect tracking of both diodes · Uniform "square law" characteristics 2 · Ideal HiFi tuning device when used in 1 low-distortion, back-to-back configuration VPS05161 3 1 2 EHA07004 Type Marking BB 804 SFs Pin Configuration 1 = A1 2 = A2 Package 3=C1/2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 18 Peak reverse Infineon Technologies
Original
EHD07050 EHD07051 EHD07052
Abstract: SIEMENS Silicon Variable Capacitance Diode BB 804 â'¢ For FM tuners â'¢ Monolithic chip with common cathode for perfect tracking of both diodes â'¢ Uniform "square lawâ' characteristics â'¢ Ideal Hifi tuning device when used in low-distortion, back-to-back configuration Type Ordering Code (tape and reel) BB 804 Pin Configuration Q62702-B372 Marking 3 ° M 'l M - 1 EHA07004 Package SF (see Characteristics for marking of capacitance subgroups) SOT -
OCR Scan
01HQ470 D1S047H
Abstract: BAT 17W Silicon Schottky Diodes 3 · For mixer applications in the VHF / UHF range · For high-speed switching applications 2 1 BAT 17-04W 1 3 BAT 17-05W BAT 17-06W 3 BAT 17W 3 VSO05561 3 1 2 1 2 EHA07005 EHA07002 1 2 EHA07006 EHA07004 Type Marking Pin Configuration Package BAT 17-04W 54s 1 = A1 2 = C2 3 = C1/A2 SOT-323 BAT 17-05W 55s 1 = A1 2 = A2 3 = C1/2 SOT-323 BAT 17-06W 56s 3 = C1 Infineon Technologies
Original
C1 marking sot-323 sot323 marking A.C
Abstract: SIEMENS Silicon Variable Capacitance Diode · For FM radio tuners with extended frequency band · High tuning ratio at low supply voltage (car radio) · Monolithic chip (common cathode) for perfect dual diode tracking · Coded capacitance groups and group matching available BB 814 Type BB 814 Ordering Code (tape and reel) Q62702-B404 Pin Configuration 3 ° ° EHA07004 Marking SH (see Characteristics for marking of capacitance subgroups) Package SOT-23 Maximum Ratings per Diode Parameter -
OCR Scan
DIODE MARKING CODE TW
Abstract: BB804 Silicon Variable Capacitance Diode 3 For FM tuners Monolithic chip with common cathode Uniform "square law" characteristics Ideal HiFi tuning device when used in for perfect tracking of both diodes 2 1 low-distortion, back-to-back configuration VPS05161 3 1 2 EHA07004 Type Marking BB804 SFs Pin Configuration 1 = A1 2 = A2 Package 3=C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 18 Infineon Technologies
Original
SFs SOT23
Abstract: SIEMENS Silicon Variable Capacitance Diode BB 814 â'¢ For FM radio tuners with extended frequency band â'¢ High tuning ratio at low supply voltage (car radio) â'¢ Monolithic chip (common cathode) for perfect dual diode tracking â'¢ Coded capacitance groups and group matching available Type Ordering Code (tape and reel) BB 814 Q62702-B404 Pin Configuration 3 â  Â° EH I Kh ° EHA07004 Marking Package SH (see Characteristics for marking of -
OCR Scan
D12Q474 EHD07054
Abstract: BB804 Silicon Variable Capacitance Diode 3 For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics 2 Ideal HiFi tuning device when used in 1 low-distortion, back-to-back configuration VPS05161 #1; #1; #1; #1; 3 1 2 EHA07004 Type Marking BB804 SFs Pin Configuration 1 = A1 2 = A2 Package 3=C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 18 Infineon Technologies
Original
Abstract: BBY58-05W/BBY58-06W 3 Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series inductance 2 Designed for low tuning voltage operation 1 for VCO's in mobile communications equipment VSO05561 For low frequency control elements Very low capacitance spread such as TCXOs and VCXOs BBY58-05W BBY58-06W 3 3 1 2 1 EHA07004 2 EHA07006 Type Marking Pin Configuration Package BBY58-05W B5s 1 = A1 Infineon Technologies
Original
Abstract: BBY 58-04W . BBY 58-06W 3 Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode 2 Low series inductance Designed for low tuning voltage operation 1 for VCO's in mobile communications equipment VSO05561 For low frequency control elements such as TCXOs and VCXOs Very low capacitance spread #1; #1; #1; #1; #1; #1; BBY 58-04W BBY 58-05W 3 BBY 58-06W 3 3 1 2 1 EHA07005 2 1 2 EHA07006 EHA07004 Type Marking Pin Infineon Technologies
Original
Abstract: BAT 18 . Silicon RF Switching Diode 3 · Low-loss VHF / UHF switch above 10 MHz · PIN diode with low forward resistance 2 1 BAT 18 BAT 18-05 BAT 18-04 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT 18-06 3 3 VPS05161 1 2 EHA07006 EHA07004 Type Marking Pin Configuration Package BAT 18 A2s 1=A 2 n.c. 3=C SOT-23 BAT 18-04 AUs 1 = A1 2 = C2 3 = C1/A2 SOT-23 BAT 18-05 ASs 1 = A1 2 = A2 Infineon Technologies
Original
top marking c2 sot23 marking a2s sot-23 sot-23 Marking c1 AUS SOT23 sot23 marking a2 DIODE BAT 100MH EHD07019 EHD07020
Abstract: BBY 58-04W . BBY 58-06W Silicon Tunig Diodes 3 · Excellent linearity · High Q hyperabrupt tuning diode · Low series inductance · Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment · For low frequency control elements 1 such as TCXOs and VCXOs VSO05561 · Very low capacitance spread BBY 58-05W BBY 58-06W 3 BBY 58-04W 3 3 1 2 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking Pin Configuration Infineon Technologies
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A2 diode BBY 10 DIODE MARKING B4
Abstract: SIEMENS BAT17W Silicon Schottky Diodes â'¢ For mixer applications in the VHF / UHF range â'¢ For high-speed switching applications BAT17-04W BAT 17-05W BAT 17-06W 3 BAT17W 3 3 o W 3 â'¢W l-U 2 -0 1 -o o o- EHA07002 1 0- 2 -o I 0- -W -Ul- EHA07004 EHA07005 EHA07006 Pin Config uration Type Marking Ordering Code BAT 17W 53s Q62702-A1271 1=A 2 n.c. 3=C BAT 17-04W 54s Q62702-A1272 1 = A1 -
OCR Scan
Q62702-A1273 Q62702-A1274
Abstract: BB804 Silicon Variable Capacitance Diode 3 For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics 2 Ideal HiFi tuning device when used in 1 low-distortion, back-to-back configuration VPS05161 3 1 2 EHA07004 Type Marking BB804 SFs Pin Configuration 1 = A1 2 = A2 Package 3=C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 18 Infineon Technologies
Original
SFs BB804
Abstract: SIEMENS Silicon Schottky Diodes · For mixer applications in the VH F / UHF range · For high-speed switching applications BAT17W BAT17W BAT 17-04W o 3 BAT 17-05W BAT17-06W Q 3 9 3 - [> | Type BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W c ó tX * W 5 EHA07002 EHA07005 ° EHA07004 ° Kl * W 2 -Ò EHAO70O6 Marking Ordering Code 53s 54s 55s 56s Q62702-A1271 Q62702-A1272 Q62702-A1273 Q62702-A1274 Pin Config uration 1 =A 1 = A1 1 = A1 3 = C1 2 n.c. 2 = C2 2 = A2 2 = -
OCR Scan
BAT17
Abstract: BAS40-04W.BAS40-06W 3 Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS40-04W 2 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 2 1 2 EHA07006 EHA07004 EHA07005 VSO05561 Type Marking Pin Configuration Package BAS40-04W 44s 1 = A1 2 = C2 3 = C1/A2 SOT323 BAS40-05W 45s 1 = A1 2 = A2 3 = C1/C2 SOT323 BAS40 Infineon Technologies
Original
EHB00159 EHB00158 EHB00156 EHB00157 EHD07169 EHD07168
Abstract: BAT68W Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications 3 2 1 BAT68W BAT68-05W BAT68-04W 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT68-06W 3 3 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT68W 84s 1 = A1 2 =C2 3 = C1/A2 SOT323 BAT68-04W 85s 1 = Infineon Technologies
Original
EHD07101 EHD07104 EHD07103
Abstract: BAV 74 Silicon Switching Diode Array 3 · For high-speed switching applications · Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM 50 Forward current IF 200 mA Surge forward current, t = 1 us IFS 4.5 A Total power dissipation, TS = 35 °C Infineon Technologies
Original
diode marking 74 EHN00019 EHB00069 EHB00070 EHB00071 EHB00072 EHB00073
Abstract: BAT18.BAT18-05 Silicon RF Switching Diode 3 Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s 1=A 2 n.c. 3=C SOT23 BAT18-04 AUs 1 = A1 2 = C2 3 = C1/A2 SOT23 BAT18-05 ASs 1 = A1 2 = A2 3 = C1/2 SOT23 Maximum Ratings Parameter Infineon Technologies
Original
bat18 a2 A2 SOT23 BAT18 marking A2 c2 sot23 top marking 3c sot23 BAT18-04 sot23
Abstract: BAT68-04W . BAT68-06W Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications 3 2 1 BAT68-05W BAT68-04W BAT68-06W 3 3 3 1 2 1 2 EHA07005 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT68-04W 84s 1 = A1 2 =C2 3 = C1/A2 SOT323 BAT68-05W 85s 1 = A1 2 = A2 3 Infineon Technologies
Original
Abstract: BAR 14-1 . BAR 16-1 Silicon PIN Diodes 3 · RF switch, RF attenuator for frequencies above 10 MHz · Low distortion faktor · Long-term stability of electrical characteristics 2 BAR 14-1 BAR 15-1 BAR 16-1 3 3 3 1 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005 1 Type Marking Pin Configuration Package BAR 14-1 L7s 1 = A1 2 = C2 3=C1/A2 SOT-23 BAR 15-1 L8s 1 = A1 2 = A2 3 = C1/2 SOT-23 BAR 16-1 L9s 1 Infineon Technologies
Original
marking L8s marking L7s diode TS SOT23 EHD07065 EHD07068 EHD07066 EHD07067
Abstract: BAT 64 Silicon Schottky Diodes 3 · For low-loss, fast-recovery, meter protection, bias isolation and clamping applications · Integrated diffused guard ring · Low forward voltage 2 1 BAT 64 3 BAT 64-05 BAT 64-06 3 1 BAT 64-04 3 VPS05161 3 1 2 1 2 EHA07005 EHA07002 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT 64 63s 1 Infineon Technologies
Original
355 sot-23 Diode SOT-23 marking C2- 65s sot23 diode marking 355 SOT23 SOT23 Marking 64s 50/60H EHB00057 EHB00058 EHB00152 EHB00153 EHB00059
Abstract: BAS125W Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, Integrated diffused guard ring Low forward voltage 3 bias isolation and clamping applications 2 1 BAS125W 3 BAS125-05W BAS125-06W 3 1 BAS125-04W 3 VSO05561 3 1 2 1 2 EHA07005 EHA07002 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAS125W Infineon Technologies
Original
bas125 c2 sot323 EHD07115 EHD07117 EHD07116 EHD07118
Abstract: BAT 17 . Silicon Schottky Diode 3 · For mixer applications in the VHF / UHF range · For high-speed switching applications 2 1 BAT 17 BAT 17-05 BAT 17-04 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT 17-06 3 3 VPS05161 1 2 EHA07006 EHA07004 Type Marking Pin Configuration Package BAT 17 53s 1=A 2 n.c. 3=C SOT-23 BAT 17-04 54s 1 = A1 2 = C2 3 = C1/A2 SOT-23 BAT 17-05 55s 1 = A1 2 = A2 3 = C1/2 Infineon Technologies
Original
Diode SOT-23 marking C2 EHD07106 EHD07107 EHD07108 EHD07109 EHD07110
Abstract: BAT 64.W Silicon Schottky Diodes 3 For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 2 1 BAT 64W BAT 64-04W BAT 64-05W 1 3 1 2 EHA07002 BAT 64-06W 3 3 3 VSO05561 1 2 EHA07005 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT 64-04W Infineon Technologies
Original
BAT64-04/06W 64-04/06W
Abstract: BAR14-1.BAR16-1 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies Low distortion faktor Long-term stability of electrical characteristics above 10 MHz BAR15-1 3 3 2 1 BAR16-1 3 BAR14-1 1 2 1 2 1 2 EHA07006 EHA07004 EHA07005 VPS05161 Type Marking Pin Configuration Package BAR14-1 L7s 1 = A1 2 = C2 BAR15-1 L8s 1 = A1 2 = A2 3=C1/A2 SOT23 3 = C1/2 SOT23 BAR16-1 L9s 1 = C1 Infineon Technologies
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MARKING GP SOT23
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