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WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD

Diode C91 02

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: speed power switching Lot No. C91 -02 44 Abridged type name Applications Lot No. division , Low-loss Fast Recovery Diodes(LLD) Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE SCHOTTKY BARRIER DIODE (600V , -220F15(FE)/SC-67 (EIAJ) 3 600V max 10A max TO-220F15 3 ERC91-02 (3.0A) LOW LOSS SUPER HIGH -
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ERA91-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 power Diode 200V 10A high power rectifier diode single c91 02 200v 30A schottky C91 diode ERA92-02
Abstract: hermetically sealed leadless surface mounted implosion diode (SMID) glass envelopes. They are intended for use , CONDITIONS MAX. UNIT vF forward voltage lF = 0.2 A; note 1 C3V6 - C6V8 1.2 V C7V5-C510 1.2 V , 10 1 62 C91 85 91 96 60 200 0.09 0.13 5 1 68 C100 94 100 106 60 200 0.09 0.13 5 1 75 C110 104 110 , 5 68 C91 126 1.2 5 75 C100 139 1.1 5 82 C110 152 1 5 91 C120 167 0.90 5 100 C130 185 0.81 5 110 , -3.5 + 0.2- â'"0.3 Ã I MBA50S 0 D1 - " +0.1 Fig.9 S0D87. October 1991 745 -
OCR Scan
BZD27 BZD27-C3V6 BZD27-C7V5 C6V8 C82 004 diode C510 C82 diode C82 004 7Z97283 S3T31 MSA020
Abstract: diode. Y November 1988 627 B ZD 23 S ER E S _ _ R , A R A C T E R IS T IC S Tj = 25 ° C unless otherwise specified Forward voltage l F = 0.2 A , 1 1 1 1 33 36 39 43 47 C68 C75 C82 C91 C100 64 70 77 85 94 68 75 82 91 , C43 C47 C51 C56 C62 C68 C75 C82 C91 C100 C110 C120 C130 C150 C160 C180 C200 C220 -
OCR Scan
BZD23
Abstract: sealed axial-leaded implosion diode (ID) glass envelopes. They are intended for use as voltage regulator , CONDITIONS MAX. UNIT vF forward voltage lF = 0.2 A; note 1 C3V6 - C6V8 1.2 V C7V5-C510 1.2 V Note , . MAX. MIN. MAX. MAX. C91 85 91 96 60 200 0.09 0.13 5 1 68 C100 94 100 106 60 200 0.09 0.13 5 1 75 , 68 C91 126 1.2 5 75 C100 139 1.1 5 82 C110 152 1 5 91 C120 167 0.90 5 100 C130 185 0.81 5 110 -
OCR Scan
BZD23-C3V6 BZD23-C7V5 bje 66 BJE 171 C270 C120 C110 C100 53T31 MGA020
Abstract: surface mounted implosion diode (SMID) glass envelopes. They are intended for use as voltage regulator , specified. SYMBOL vF CONDITIONS PARAMETER UNIT MAX. lF= 0.2 A; note 1 forward voltage , 100 0.08 0.13 10 1 62 1 68 C91 85 91 96 60 200 0.09 0.13 , 1.3 5 68 C91 126 1.2 5 75 C100 139 1.1 5 82 C110 152 1 -
OCR Scan
SB01Q BB206
Abstract: NOM. MAX. UNIT hermetically sealed axial-leaded implosion diode (ID) glass envelopes. They are , vF forward voltage lF = 0.2 A; note 1 C3V6 - C6V8 1.2 V C7V5- C510 1.2 V Note 1. Measured , . MAX. MIN. MAX. MAX. C91 85 91 96 60 200 0.09 0.13 5 1 68 C100 94 100 106 60 200 0.09 0.13 5 1 75 , 86.5 1.7 5 51 C68 94.4 1.6 5 56 C75 103.5 1.5 5 62 C82 114 1.3 5 68 C91 126 1.2 5 75 C100 139 1.1 -
OCR Scan
MGA018 305 5VL c7v5 Philips MBB C-510- working of voltage regulator MSB022 MQA020
Abstract: hermetically sealed leadless surface mounted implosion diode (SMID) glass envelopes. They are intended for use , CONDITIONS MAX. UNIT vF forward voltage lF= 0.2 A; note 1 C3V6 - C6V8 1.2 V C7V5-C510 1.2 V , . MAX. C82 77 82 87 30 100 0.08 0.13 10 1 62 C91 85 91 96 60 200 0.09 0.13 5 1 68 C100 94 100 106 60 , C56 78.6 1.9 5 47 C62 86.5 1.7 5 51 C68 94.4 1.6 5 56 C75 103.5 1.5 5 62 C82 114 1.3 5 68 C91 126 -
OCR Scan
Bz027 cathode bzd27 diode c82 sod87 package S0T31 7Z2432S
Abstract: axial-leaded implosion diode (ID) glass envelopes. They are intended for use as voltage regulator and , . lF= 0.2 A; note 1 forward voltage C3V6 - C6V8 1.2 V C7V5-C510 1.2 V Note 1 , CURRENT at REVERSE VOLTAGE M nA) lz (mA) MAX. VH(V) C91 85 91 96 60 200 , 5 68 C91 126 1.2 5 75 C100 139 1.1 5 82 C110 152 1 5 -
OCR Scan
BB16B 53R31 S0D81 MBC051
Abstract: 110 C10 C11 C12 C13 C15 C16 C18 C20 C22 C24 C27 C30 C33 C36 C39 C43 C47 C51 C56 C62 C68 C75 C82 C91 , dimensions) UNIT mm A 2.3 2.0 A1 0.05 b 1.6 1.4 c 0.2 D 4.5 4.3 E 2.8 2.4 H 5.5 5.1 Q 3.3 2.7 Note 1. The , other industrial or intellectual property rights. Printed in The Netherlands 613510/02/pp8 Date , 270 Description Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener Philips Semiconductors
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philips zener diode c47- philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER Zener diode smd marking 22 DIODE ZENER smd marking 72 M3D168 BZG01 DO-214AC MBL143 HTML04232003/BZG01-C10
Abstract: mounted implosion diode. April 1991 1669 BZD27 SERIES RATINGS Limiting values in accordance , specified Forward voltage IF = 0.2 A 1670 April 1991 Vp < 1.2 V Regulator diodes J , 0.13 10 10 10 10 10 1 1 1 1 1 C82 C91 C100 C l 10 C120 0.08 0.09 0.09 0.09 -
OCR Scan
BZD27-C510
Abstract: . SYMBOL VF forward voltage PARAMETER CONDITIONS IF = 0.2 A; see Fig.6 BZD23 series MAX. 1.2 V , 62 68 75 82 91 100 110 120 130 150 160 180 200 C51 C56 C62 C68 C75 C82 C91 C100 C110 C120 C130 , 12 10 Zener diode & transient voltage suppressor Zener diode & transient voltage suppressor Zener diode & transient voltage suppressor Zener diode & transient voltage suppressor Zener diode & transient voltage suppressor Zener diode & transient voltage suppressor Zener diode & transient voltage Philips Semiconductors
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iz c220 zener diode BZD23-C15 4V7 ZENER DIODE PHILIPS zener diode marking c24 philips axial 033 c5v1 M3D119 BZT0399 BZT03BZD23- C8V2BZT03C91 BZT03C91
Abstract: 9 10 12 7 1 5 2 7 735 105 525 210 735 LED, SMT, Green DIODE, AXIAL, THRU HOLEIN5404CT LED, SMT,RED LED, SMT,YELLOW 13 2 210 S2012-02-ND 15 10 1050 S1011-02-ND 16 , PIN 20 (GND) and PIN Panasonic 24(PSTCLK) of J1 BDM HEADER (on bottom side of board) C91 -
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C0805COG500-101JNE C0805COG500-100JNE BLM31A700SPT C0805COG500 SOP8 C66 4E smd diode 2X13 berg socket motorola smd diodes TA016TCM106KBR MC5307C3 C0805X7R500-103KNE C0805X7R500-104KNE C0805X7R500-152KNE C0805COG500-102JNE
Abstract: , C70,C71,C72,C73,C74,C75, C76,C77,C81,C86,C87,C88, C89,C90,C91,C113,C114, C115,C116,C123,C125,C126 , Sullins BAV99DI 32CTQ030 R251.750 Socket7Sink MICTOR 2163S-03-ND S1012-05-ND S1012-02-ND S1012 , Digi-Key Digi-Key Digi-Key 2163S-03-ND S1012-05-ND S1012-02-ND S1012-04-ND SM2MD03S02-01 MHB10K-ND , , Right Angle DIODE, 10mA, Vf=1V, Vr=75V, DL-35 DIODE, 1A, Vf=0.3V, Vr=15V, SMB LED, Red, 20mA, 2V, 6mcd , MO-161 MO-161 LEDRA DL-35 SMB 1206 1206 DIODE, If=300mA, Vf=1V@50mA, Vr=70V, SOT-23 DIODE Advanced Micro Devices
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M5819P 5-pin smd c255 NPN C239 MOSFET R166 NPN C246 u34 diode C251 BR1225-1VC ECS-T1CX106R P192-ND PCS3106CT-ND ECU-V1H103KBV PCC103BVCT-ND
Abstract: design, which includes a power FET (Q1), a diode (D1), an inductor (L1), and several capacitors (C1 - C5 , be in the range of 0.2 ­ 0.7 [1]. Using Equation 3, the range of Vcntrl can be determined: Vcntrl , bandwidth of the external regulator), the cut-off frequency should be chosen to be around 100 kHz. Diode D1 , prevent additional biasing of regulator feedback input. The diode's forward voltage (Vdf) should be low , diode MA27D29 has a Vdf of 0.25 V, which is low enough to be used in this application. For other diodes Analog Devices
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EE-339 ADSP-BF533 pwm 339 p-chanel mosfet p-chanel fet LTC3411 LTC3406 EE-328 ADSP-BF534/ADSP-BF536/ADSP-BF537
Abstract: =20mW (13dBm) 62 mA P=25mW (14dBm) 69 mA Current Consumption, Power Down 23 0.2 , crystal must be connected to XOSC, and an external LC-tank with a varactor diode is required for the , The VCO tank consist of C91-C93, L91 and the varactor (VAR). C91 determines the coupling to the , 5 LC or SAW FILTER 24 6 23 RF_OUT 7 C61 AVDD 8 AVDD C91 9 z z , C61 C91 C92 C93 C121 C122 C123 C161 C151 C210 C211 L51 L61 L91 R121 R122 R123 VAR HKW-Elektronik
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SSOP-28 6200-SK TOKO CERAMIC FILTER 455 TOKO 455KHz IF module TOKO 455KHz demodulator C123 300MH 500MH MO-150 6200-DBK
Abstract: =20mW (13dBm) 62 mA P=25mW (14dBm) 69 mA Current Consumption, Power Down 23 0.2 , must be connected to XOSC, and an external LC-tank with a varactor diode is required for the VCO. For , , L91 and the varactor (VAR). C91 determines the coupling to the internal VCO amplifier, and thus the , AVDD 8 AVDD C91 9 z z VCO_IN 10 C93 AGND C92 AS3921 LC or SAW FILTER , 2. Bill of materials for application circuit Item C10 C11 C12 C51 C61 C91 C92 C93 C121 austriamicrosystems AG
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Manchester code TOKO HELICAL FILTERS TOKO 455KHz filter wide 433 MHz FILTER C211 C210
Abstract: MC33078D 27pF C91 C77 AGND R92 11.8k R91 11.8k R77 R78 1200pF 3 U10A C46 + + 1 1 2 7 , made from this design, capacitors C85 through C91 were left off of the layout and consequently were , C86,C87,C88,C89,C90, C91 D1 FB2,FB3 J1,J16 J2,J17 J3 J4 J5 J6 J7 J8,J9,J10,J11,J12,J13, J14,J15,J22 , -173 J-RCA-RAPCB CONBANANA HDR8X2 3X1HDR CAP,27pF,SM1206,5%,COG,50V DIODE,SOT323,SIGNAL DIODE FERRITE BEAD - , -8 CLKOSC_GE NERIC CASE17-02 CASE 17-02 SOT23 Value TC74VHC57 4 TC74VHC74 AFN TC74HCT24 4FW MC33078D MAX708 Cirrus Logic
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cx21af HDR10X2 TOSLINK connector transistor subwoofer circuit diagram toslink transmitter Hdr8x2 CRD4923 CS4923 CS4226 IEC61937 AN115 CRD23CMD
Abstract: mA P=25mW (14dBm) 69 mA Current Consumption, Power Down 23 0.2 Current , external crystal must be connected to XOSC, and an external LC-tank with a varactor diode is required , varactor (VAR). C91 determines the coupling to the internal VCO amplifier, AVDD=3V 28 1 C11 , CLOCK 25 5 24 6 RF_OUT L61 7 C61 AVDD 8 AVDD C91 9 VCO_IN CC400 , materials for the application circuit Item C10 C11 C12 C51 C61 C91 C92 C93 C121 C122 C123 Chipcon
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CC400DB monopole antenna khz
Abstract: IXYH30N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat) ï' ï' ï'£ tfi , Fast Diode Avalanche Rated High Current Handling Capability International Standard Package , .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise , Centigrade 100.0 1,000.0 fmax - KiloHertzs Fig. 22. Maximum Transient Thermal Impedance (Diode , _30N120C3(4N-C91) 9-04-13 IXYH30N120C3D1 Fig. 23. Forward Current IF vs VF 70 Fig. 24. Reverse IXYS
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IF110 4N-C91
Abstract: Advance Technical Information IXYJ30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES = , Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated Advantages , Drain 3 = Source 4 = Isolated Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified , Fig. 22. Maximum Transient Thermal Impedance (Diode) Z (th)JC - ºC / W 10 1 0.1 0.01 , Limits, Test Conditions, and Dimensions. IXYS REF: IXY_30N120C3(4N-C91) 9-04-13 IXYJ30N120C3D1 Fig IXYS
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E153432
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