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DIODE ED 92

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Abstract: designs incorporating the product. PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB, Ed. 6 August 2003 - 2 of 92 - , . 86 - 3 of 92 - PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB, Ed. 6 August 2003 PRODUCT PREVIEW , -05806) Block Diagram PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB, Ed. 6 August 2003 - 4 of 92 - Proprietary , extracted to the host. - 5 of 92 - PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB, Ed. 6 August 2003 PRODUCT PREVIEW , . PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB, Ed. 6 August 2003 - 6 of 92 - Proprietary TranSwitch Corporation ... TranSwitch
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92 pages,
1706.93 Kb

TXC-05806 TEXT
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Abstract: designs incorporating the product. PRELIMINARY TXC-05806-MB TXC-05806-MB, Ed. 7 October 2003 - 2 of 92 - , . 86 - 3 of 92 - PRELIMINARY TXC-05806-MB TXC-05806-MB, Ed. 7 October 2003 Proprietary TranSwitch , PRELIMINARY TXC-05806-MB TXC-05806-MB, Ed. 7 October 2003 - 4 of 92 - Proprietary TranSwitch Corporation Information , the assertion of CONG on the CellBus. PRELIMINARY TXC-05806-MB TXC-05806-MB, Ed. 7 October 2003 - 6 of 92 - , of packet for an AAL5 designated flow. - 9 of 92 - PRELIMINARY TXC-05806-MB TXC-05806-MB, Ed. 7 October 2003 ... TranSwitch
Original
datasheet

92 pages,
1697.46 Kb

TXC-05806 TEXT
datasheet frame
Abstract: designs incorporating the product. PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB Ed. 4, January 2003 - 2 of 92 - , . 86 - 3 of 92 - PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB Ed. 4, January 2003 PRODUCT PREVIEW , -05806) Block Diagram PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB Ed. 4, January 2003 - 4 of 92 - Proprietary , extracted to the host. - 5 of 92 - PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB Ed. 4, January 2003 PRODUCT PREVIEW , . PRODUCT PREVIEW TXC-05806-MB TXC-05806-MB Ed. 4, January 2003 - 6 of 92 - Proprietary TranSwitch Corporation ... TranSwitch
Original
datasheet

92 pages,
1764.58 Kb

TXC-05806 TEXT
datasheet frame
Abstract: ) 5£2 I d(O N ) (min) 75mA Order Number / Package TO-92 2N7000 2N7000 Features Free from secondary , thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and , Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVD SS b v dgs TO-92 , 2N7000 2N7000 Thermal Characteristics Package lD (continuous)* ID (pulsed) Power Dissipation @ Tc = 25°C TO-92 , Turn-OFF Time Diode Forward Voltage Drop 75 VG s - 4.5V, VDS=10V VG S = 4.5V, lD = 75mA VG S = 10V ... OCR Scan
datasheet

4 pages,
111.99 Kb

2N7000 TEXT
datasheet frame
Abstract: 1 2 3 Reference Anode Cathode 5 1 2 3 TO-92 (TAPING) Ph as ed SOT-25A (TOP , a lot of ranges of the application as a zener diode besides the replacement is possible because it , be adjusted 3. Low Dynamic Output Impedance VREF=1.260V±0.8% VREFVo12V ZKA =0.13 typ. TO-92 , 2 VA * TO-92 Package du c -30~+85 12 50 50 -40~+125 300 (TO-92) 150 (SOT-25A) VREF~12 1~30 , Cathode current Ph as ed O (Ambient Temperature, Ta=25°C) V mA VKA IK ut Pr o IREF Pd ... Mitsumi
Original
datasheet

5 pages,
294.93 Kb

zener ph 015 MM1530AT C 13 PH Zener diode DIODE ED 92 C 15 PH Zener diode C 12 PH zener C 12 PH Zener diode MM1530 TEXT
datasheet frame
Abstract: , France (43) 72.75.75 ED_13, ED_76, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 , , 72003 Le Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , ) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 Amperes/100-2400 ... OCR Scan
datasheet

10 pages,
1062.51 Kb

ED 08 diode ed13 ED42 pow-r-blok thyristor bridge ed 4 DIODE ED 16 DIODE A30 a30 DIODE 30-BRIDGE 12v DC motor speed control using scr diode ED 84 scr 209 ED44 SCR WITH I-V CHARACTERISTICS scr kp 1800 A12U DIODE marking ED ED76 SCR TN 22 1500 SCR Phase Control thyristor MTT 25 N 14 TEXT
datasheet frame
Abstract: paralleling Low C|SS and fa st sw itch ing spe ed s E xcelle nt th e rm a l stab ility Integral S ou rce-D ra in diode High input im p ed ance and high gain C o m p le m e n ta ry N- and P -channel d e vice s , TO-92 V N 0 30 0L High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A , the po w e r handling ca p a b ilitie s o f b ipo lar tra n sisto rs and w ith the high input im p ed , , high input im pedance, low input cap acita nce , and fa st sw itch ing spe ed s are desired ... OCR Scan
datasheet

2 pages,
133.65 Kb

VN0300 TEXT
datasheet frame
Abstract: Sonnenschein Li hium Ba ery is a componen ha can be permanen y connec ed o a circui , in many cases for he , sea ed case. The herme ica y sea ed case is essen ia for he ong she f ife and inheren safe y of , in he marke and more han 50 mi ion ba eries in he fie d wi h no repor ed inciden s. The comp e e , very ow se f discharge on he she f and during opera ion. I is bes sui ed for ow curren s. I may need , Underwri ers Labora ories are re evan . The ce s shou d no be connec ed in series wi h an e ec rica ... Original
datasheet

2 pages,
97.75 Kb

Sonnenschein SL-790 SL-350 SL-360 sl-361 SL-386 SL-550 SL278 SL361 SL389 sl500 Sonnenschein SL-361 diode ed 85 SL-340 ica 700 Y Sonnenschein SL-340 Sonnenschein SL-770 TEXT
datasheet frame
Abstract: ) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 Amperes/100-2400 , WIMEREX ED_ ED41 _ _16 _20 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 , Dual SCR SCR/Diode Isolated Modules 130-160-200 Amperes 100-2400 Volts -[■ c —' !r ¡ L* & ! ! / * àw f\ ® ® if E£ j \ — I 0 I -A- r r Dual SCR, SCR/Diode , Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 Amperes/100-2400 Volts Ordering Information Example ... OCR Scan
datasheet

11 pages,
577.5 Kb

scr 6 Ampere ED42 1002400 diode ED 21 diode ed 49 ED 03 Diode ED430816 12v dc motor by using SCR ed13 scr 12v DIODE ED 11 diode ED 84 DIODE ED 12v DC motor speed control using scr BP107 SCR Phase Control BP107 thyristor scr 800A BP107 5000 volt scr BP107 DIODE ED 16 BP107 ed13 diode BP107 ED 05 Diode BP107 BP107 BP107 TEXT
datasheet frame
Abstract: (max) 1.8V 1.8V (min) 0.15A 0.15A TO-92 V N 3 51 5L VN 4012L 4012L 3 5 0V 4 0 0V Features , fa s t sw itch ing speeds E xcelle nt the rm a l sta b ility Integral S ou rce-D ra in diode High input im p ed ance and high gain C o m p le m e n ta ry N- and P -channel devices Advanced DMOS , ith the high input im p ed ance and positive te m p e ra tu re co e fficie n t in he r ent in M O S , breakdow n volta ge , high input im pedance, low input cap acita nce , and fa st sw itch ing spe ed s are ... OCR Scan
datasheet

2 pages,
136.51 Kb

4012L VN3515L VN4012L TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
Application Specific Discretes A.S.D.] FLC21 FLC21 Series [ September 2000 - Ed: 5D LOW POWER FIRE LIGHTER : Thyristor for the switching operation. Z: Zener diode to set the igniting threshold voltage. D: Diode for connected FUNCTIONAL DIAGRAM TO-92 (Plastic) n DEDICATED THYRISTOR STRUCTURE FOR CAPACITIVE DISCHARGE CIRCUIT CIRCUIT NUMBER: SCR + diode + Zener + Resistance ITRM = 90A PACKAGE A: TO92 135: V = 135V Repetitive surge peak on state current for diode -305C -305C 3 Tamb 3 1205C 1205C dI/dt Critical rate of rise on state
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6532-v3.htm
STMicroelectronics 06/12/2000 9.06 Kb HTM 6532-v3.htm
Discretes A.S.D. TM FLC21 FLC21 FAMILY [ June 2000 - Ed: 4D LOW POWER FIRE LIGHTER CIRCUIT The FLC21 FLC21 series have Th: Thyristor for the switching operation. Z: Zener diode to set the igniting threshold voltage. D: Diode for the reverse conduction. R: 2 k W resistor. DESCRIPTION Z R D Th pin 3 pin 1 pin 2 not CIRCUIT NUMBER: SCR + diode + Zener + Resistance ITRM = 90A PACKAGE A: TO92 135: V = 135V 65: V = 65V RM diode -305C -305C 3 Tamb 3 1205C 1205C dI/dt Critical rate of rise on state current -305C -305C 3 Tamb 3 1205C 1205C 50 A/ m s
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6532.htm
STMicroelectronics 20/10/2000 9.3 Kb HTM 6532.htm
: For a surge greater than the maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM sensitive devices such as MOS Technology and low voltage supplied IC's. August 1999 Ed : 2A Symbol 4300 SM15T22A SM15T22A MEK SM15T22CA SM15T22CA BEK 5 18.8 20.9 22 23.1 1 30.6 49 39.3 254 9.2 3700 SM15T24A SM15T24A MEM SM15T24CA SM15T24CA 69.7 143 10.0 2400 SM15T68A SM15T68A MFP SM15T68CA SM15T68CA BFP 5 58.1 64.6 68 71.4 1 92 16.3 121 83 10.4 1550 SM15T100A SM15T100A
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3080.htm
STMicroelectronics 20/10/2000 9.88 Kb HTM 3080.htm
10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in voltage supplied IC's. January 1999 - Ed: 5A Symbol Parameter Value Unit R th (j-l) Junction to leads 15 5.0 6.4 10 9.2 171 13.4 746 5.7 9500 SMCJ6.0A-TR FUB SMCJ6.0CA-TR FBB 800 6.0 6.7 10 10.3 152 13.7 730 SMCJ8.5CA-TR FBD 5 8.5 9.4 1 14.4 105 19.5 512 7.3 7000 SMC10A-TR SMC10A-TR FUF SMCJ10CA-TR SMCJ10CA-TR FBF 5 10 11.1 1 17 92 21.7 308 8.8 4300 SMCJ18A-TR SMCJ18A-TR FUL SMCJ18CA-TR SMCJ18CA-TR FBL 1 18 20 1 29.2 53 39.3 254 9.2 3700 SMCJ20A-TR SMCJ20A-TR FUM
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5617-v1.htm
STMicroelectronics 02/04/1999 9.14 Kb HTM 5617-v1.htm
10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in voltage supplied IC's. January 1999 - Ed: 5A Symbol Parameter Value Unit R th (j-l) Junction to leads 15 5.0 6.4 10 9.2 171 13.4 746 5.7 9500 SMCJ6.0A-TR FUB SMCJ6.0CA-TR FBB 800 6.0 6.7 10 10.3 152 13.7 730 SMCJ8.5CA-TR FBD 5 8.5 9.4 1 14.4 105 19.5 512 7.3 7000 SMC10A-TR SMC10A-TR FUF SMCJ10CA-TR SMCJ10CA-TR FBF 5 10 11.1 1 17 92 21.7 308 8.8 4300 SMCJ18A-TR SMCJ18A-TR FUL SMCJ18CA-TR SMCJ18CA-TR FBL 1 18 20 1 29.2 53 39.3 254 9.2 3700 SMCJ20A-TR SMCJ20A-TR FUM
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5617-v2.htm
STMicroelectronics 14/06/1999 9.1 Kb HTM 5617-v2.htm
9 Raw Text Format 1 /9 ACS102-5Tx [ June 2000 - Ed: 5B AC LINE SWITCH TO-92 ACS102-5TA ACS102-5TA n Blocking voltage : V DRM / V RRM = 500V n Clamping voltage : V CL = 600 V n current full cycle sine wave 50 to 60 Hz TO-92 Tamb = 100 5C 0.2 A SO-8 Tamb = 100 5 C 0.2 A I TSM Non ambient TO-92 150 5C/W SO-8 * 150 5C/W Rth (j-l) Junction to leads for full AC line cycle conduction TO-92 load, the current flows through the avalanche diode D and decreases linearly to zero. During this time
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6930.htm
STMicroelectronics 20/10/2000 15.7 Kb HTM 6930.htm
2000 - Ed: 6B AC LINE SWITCH TO-92 ACS102-5TA ACS102-5TA n Blocking voltage : V DRM / V RRM = 500V n 5C 500 V I T(RMS) RMS on-state current full cycle sine wave 50 to 60 Hz TO-92 Tamb = 100 5C 0.2 (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient TO-92 150 5C/W SO-8 * 150 5C/W Rth (j-l) Junction to leads for full AC line cycle conduction TO-92 60 5C/W * with 40mm 2 through the avalanche diode D and decreases linearly to zero. During this time, the voltage across the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6930-v1.htm
STMicroelectronics 06/12/2000 14.57 Kb HTM 6930-v1.htm
soldering during 10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in 1998 Ed: 4 Symbol Parameter Value Unit R th (j-l) Junction to leads 20 5 C/W R th (j-a) Junction to SM6T22A SM6T22A EK SM6T22CA SM6T22CA MK 1 18.8 20.9 22 23.1 1 30.6 20 39.3 102 9.2 1350 SM6T24A SM6T24A EM SM6T24CA SM6T24CA MM 1 20.5 22.8 SM6T68CA SM6T68CA NQ 1 58.1 64.6 68 71.4 1 92 6.5 121 33 10.4 625 SM6T100A SM6T100A FY SM6T100CA SM6T100CA NY 1 85.5 95.0 100 105 1 137
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3082-v2.htm
STMicroelectronics 14/06/1999 7.25 Kb HTM 3082-v2.htm
soldering during 10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in 1998 Ed: 4 Symbol Parameter Value Unit R th (j-l) Junction to leads 20 5 C/W R th (j-a) Junction to SM6T22A SM6T22A EK SM6T22CA SM6T22CA MK 1 18.8 20.9 22 23.1 1 30.6 20 39.3 102 9.2 1350 SM6T24A SM6T24A EM SM6T24CA SM6T24CA MM 1 20.5 22.8 SM6T68CA SM6T68CA NQ 1 58.1 64.6 68 71.4 1 92 6.5 121 33 10.4 625 SM6T100A SM6T100A FY SM6T100CA SM6T100CA NY 1 85.5 95.0 100 105 1 137
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3082-v1.htm
STMicroelectronics 02/04/1999 7.29 Kb HTM 3082-v1.htm
C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. IC's. August 1999 - Ed: 5A Symbol Parameter Value Unit R th (j-l) Junction to leads 15 5 C/W Bidirectional Mark. m A V V mA V A V A 10 -4 / 5 C pF SMCJ5.0A-TR FUA SMCJ5.0CA-TR FBA 800 5.0 6.4 10 9.2 8.5 9.4 1 14.4 105 19.5 512 7.3 7000 SMC10A-TR SMC10A-TR FUF SMCJ10CA-TR SMCJ10CA-TR FBF 5 10 11.1 1 17 92 21.7 461 7.8 8.8 4300 SMCJ18A-TR SMCJ18A-TR FUL SMCJ18CA-TR SMCJ18CA-TR FBL 1 18 20 1 29.2 53 39.3 254 9.2 3700 SMCJ20A-TR SMCJ20A-TR FUM
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5617-v3.htm
STMicroelectronics 25/01/2001 11.4 Kb HTM 5617-v3.htm