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DIODE ED 92

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Abstract: designs incorporating the product. PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 - 2 of 92 - , . 86 - 3 of 92 - PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 PRODUCT PREVIEW , -05806) Block Diagram PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 - 4 of 92 - Proprietary , extracted to the host. - 5 of 92 - PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 PRODUCT PREVIEW , . PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 - 6 of 92 - Proprietary TranSwitch Corporation TranSwitch
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TXC-05806 CUBIT-622
Abstract: designs incorporating the product. PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 - 2 of 92 - , . 86 - 3 of 92 - PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 Proprietary TranSwitch , PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 - 4 of 92 - Proprietary TranSwitch Corporation Information , the assertion of CONG on the CellBus. PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 - 6 of 92 - , of packet for an AAL5 designated flow. - 9 of 92 - PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 TranSwitch
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Abstract: designs incorporating the product. PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 - 2 of 92 - , . 86 - 3 of 92 - PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 PRODUCT PREVIEW , -05806) Block Diagram PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 - 4 of 92 - Proprietary , extracted to the host. - 5 of 92 - PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 PRODUCT PREVIEW , . PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 - 6 of 92 - Proprietary TranSwitch Corporation TranSwitch
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Abstract: ) 5£2 I d(O N ) (min) 75mA Order Number / Package TO-92 2N7000 Features Free from secondary , thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and , Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVD SS b v dgs TO-92 , 2N7000 Thermal Characteristics Package lD (continuous)* ID (pulsed) Power Dissipation @ Tc = 25°C TO-92 , Turn-OFF Time Diode Forward Voltage Drop 75 VG s - 4.5V, VDS=10V VG S = 4.5V, lD = 75mA VG S = 10V -
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Abstract: 1 2 3 Reference Anode Cathode 5 1 2 3 TO-92 (TAPING) Ph as ed SOT-25A (TOP , a lot of ranges of the application as a zener diode besides the replacement is possible because it , be adjusted 3. Low Dynamic Output Impedance VREF=1.260V±0.8% VREFVo12V ZKA =0.13 typ. TO-92 , 2 VA * TO-92 Package du c -30~+85 12 50 50 -40~+125 300 (TO-92) 150 (SOT-25A) VREF~12 1~30 , Cathode current Ph as ed O (Ambient Temperature, Ta=25°C) V mA VKA IK ut Pr o IREF Pd Mitsumi
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C 12 PH Zener diode C 12 PH zener C 15 PH Zener diode C 13 PH Zener diode MM1530AT zener ph 015 MM1530 MM1530AT/AN MM1431AT/AN
Abstract: , France (43) 72.75.75 ED_13, ED_76, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 , , 72003 Le Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , ) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 -
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thyristor MTT 25 N 14 SCR Phase Control SCR TN 22 1500 ED76 DIODE marking ED A12U BP107 ED430816 ED430616 ED7212130Z 0DDS201 1S697
Abstract: paralleling Low C|SS and fa st sw itch ing spe ed s E xcelle nt th e rm a l stab ility Integral S ou rce-D ra in diode High input im p ed ance and high gain C o m p le m e n ta ry N- and P -channel d e vice s , TO-92 V N 0 30 0L High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A , the po w e r handling ca p a b ilitie s o f b ipo lar tra n sisto rs and w ith the high input im p ed , , high input im pedance, low input cap acita nce , and fa st sw itch ing spe ed s are desired -
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VN0300
Abstract: Sonnenschein Li hium Ba ery is a componen ha can be permanen y connec ed o a circui , in many cases for he , sea ed case. The herme ica y sea ed case is essen ia for he ong she f ife and inheren safe y of , in he marke and more han 50 mi ion ba eries in he fie d wi h no repor ed inciden s. The comp e e , very ow se f discharge on he she f and during opera ion. I is bes sui ed for ow curren s. I may need , Underwri ers Labora ories are re evan . The ce s shou d no be connec ed in series wi h an e ec rica -
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SL-386 Sonnenschein SL-770 Sonnenschein SL-340 ica 700 Y SL-340 diode ed 85 Sonnenschein SL-361 SL-389 SL-700 SL-740 SL-789 SL-786
Abstract: ) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 , WIMEREX ED_ ED41 _ _16 _20 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 , Dual SCR SCR/Diode Isolated Modules 130-160-200 Amperes 100-2400 Volts -[â  c â'"' !r ¡ L* & ! ! / * àw f\ ® ® if E£ j \ â'" I 0 I -A- r r Dual SCR, SCR/Diode , Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 Volts Ordering Information Example -
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ED 05 Diode ed13 diode DIODE ED 16 5000 volt scr thyristor scr 800A 12v DC motor speed control using scr CR08AS MAX/10
Abstract: (max) 1.8V 1.8V (min) 0.15A 0.15A TO-92 V N 3 51 5L VN 4012L 3 5 0V 4 0 0V Features , fa s t sw itch ing speeds E xcelle nt the rm a l sta b ility Integral S ou rce-D ra in diode High input im p ed ance and high gain C o m p le m e n ta ry N- and P -channel devices Advanced DMOS , ith the high input im p ed ance and positive te m p e ra tu re co e fficie n t in he r ent in M O S , breakdow n volta ge , high input im pedance, low input cap acita nce , and fa st sw itch ing spe ed s are -
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VN3515L VN4012L
Abstract: paralleling Low C |S S and fa st sw itch ing spe ed s E xcellent th e rm a l stab ility Integral S ou rce-D ra in diode High input im p ed ance and high gain C o m p le m e n ta ry N- and P -channel d e vice s , arking fo r SOT-23: (max) 6Q (max) -2.0 V TO-92 T P 21 05N 3 Die T P 21 05N D w h e re 0 , im p ed ance and po sitive te m p e ra tu re co e fficie n t in he r e nt in M O S devices. C h a ra , , high input im pedance, lo w input cap acita nce , and fa st sw itch ing spe ed s are desired -
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TP2105 TP2105K1
Abstract: Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 Units A , . Max. Units â'"â'"â'" â'"â'"â'" â'"â'"â'" 290 9.2 17 mJ A mJ Typ. Single Pulse , Junction-to-Ambient (PCB Mounted,steady-state) Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage International Rectifier
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IRFS9N60A
Abstract: symbol ­­­ ­­­ 9.2 showing the A G integral reverse ­­­ ­­­ 37 S p-n junction diode. ­­­ ­­­ , Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 Units A W W/°C V , Typ. Max. Units ­­­ ­­­ ­­­ 290 9.2 17 mJ A mJ Typ. Single Pulse Avalanche , ) Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body International Rectifier
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diode ED 68
Abstract: Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 Units A W W/°C V , Typ. Max. Units ­­­ ­­­ ­­­ 290 9.2 17 mJ A mJ Typ. Single Pulse Avalanche , ) Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse International Rectifier
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EIA-418
Abstract: Avalanche Current G> 9.2 A Ear Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt Q , Drain Current (Tc=25 °c) 9.2 A 'd Continuous Drain Current (Tc=100°C) 6.5 'dm Drain , 100 V RDS(on) = 0.2Q. ID = 9.2 A TO-220 â'¢V 1 .Gate 2. Drain 3. Source This Material , © Qgs Gate-Source Charge - 2.7 - Qgd Gate-Drain("Miller") Charge - 7.8 - Source-Drain Diode , Continuous Source Current - - 9.2 A Integral reverse pn-diode in the MOSFET 'sM Pulsed-Source Current © - - -
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IRF520A
Abstract: ED N Applications R2 Distributed power architectures Telecommunication equipment Servers , (MLPD) (1) Thermal Resistance Junction to Case (MLPD) N O FO T R R EC N O EW M M D EN ES D IG ED N , mV N O FO T R R EC N O EW M M D EN ES D IG ED N 10V VDD 28V, IOUT 1mA 1mA IO 100mA 7.3 , D IG ED N CSS = 0.1, current limit condition Hiccup Hiccup duty cycle Gate Drive 1 % , 4.58V VCC 2.75V 1.3V 0.8V 0.5V SS/EN N O FO T R R EC N O EW M M D EN ES D IG ED N EAO Semtech
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SC4612 MLPD-12 SOIC-14 MS-012 IPC-SM-782A
Abstract: SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol 's Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current ® MIN APT6030HJN TYP MAX 23 UNIT Amps APT6030HJN 92 *SM (Body Diode) Diode Forward Voltage ® (VQS - 0V, lg - - lD [Cont.]) Reverse , G ate-Source Voltage Total Power Dissipation @ T c - 25°C UNIT Volts 92 ±3 0 360 2.9 -55 to , ro p e r H andling P ro c ed u res S h ould Be Follow ed. 405 S.W. COLUMBIA STREET BEND, OREGON -
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HU49 ISOTOP E145592 6030HJN
Abstract: 92 ED GROKULSKY REV-10 6/13/97 Chip Sets and Reference Designs PAGE-0 Detailed , Crosspoint Switches ATE, Time Domain & Laser Diode Drivers Page 66 Active Loads, Pin Drivers , Window Comparators & Infinite S/H Page 67 Delay Generators, Pulse Width Modulators & Laser Diode , Control: DSP BASED Page 92 Chip Sets and Reference Designs Direct Digital Synthesis Page , Product to Frequency Converter Page 12/28/99 12:50 PM 110 Power Management ED GROKULSKY -
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audio power amplifiers with transistors Sample Rate Converters DIODE ED 99 Instrumentation Amplifiers syncro single CHIP ac motor speed control 20MSPS
Abstract: 25-90 Amp · SCR/DIODE Modules Industry Standard Package and Grcuits Power Control Building Blocks , e f f c e n t th em a l m anagem e n t f c r g i e a t ÿ exten d ed cycfe life an d aie U L i e oe g , ELECTRICAL SPECIFICATIONS Current 27 - 25 Am ps 42 - 40 Am ps 57 - 55 Am ps 92 - 90 Am ps C i r c u i t , SPECIFICATION vF Tj 27 42 57 92 d i/d t d v /d t Vrrm Maximum DC Output Current (Tc = 85°Q M , SERIES F18.062498, PAGE 1 OF 2 25-90 Amp · SCR/DIODE Modules · Industry Standard Package and Grcuits -
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BFE 75A F18-C D-66687
Abstract: l co m. Cat Dua hod l co e m. A Trip nod le is e ola t ed Qua d Cro ss R ing VR , BAT 60A/B Characteristics: · Single diode in small SOD 323 package · Extreme low forward voltage , application · Detection and step-up conversion BAT 165 Characteristics: · Single diode in small SOD , protection · Clamping BAT 240 Characteristics: · Dual diode in SOT 23 package (halfbridge rectifier) · High voltage applications Applications: · Ultra fast rectifier diode for modem application · Infineon Technologies
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68W SOT ultra low noise 12GHz 64W SOT23 BAT 43 - 46 - 85 - 86 BAS 68-04 BAS 40-04 Infineon B132-H7456-GI-X-7600
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