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WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD
DDZ9684Q-7 Diodes Incorporated Zener Diode
BZT585B5V1T-7 Diodes Incorporated Zener Diode
BZX84B2V7-7-F Diodes Incorporated Zener Diode

DIODE ED 92

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: designs incorporating the product. PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 - 2 of 92 - , . 86 - 3 of 92 - PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 PRODUCT PREVIEW , -05806) Block Diagram PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 - 4 of 92 - Proprietary , extracted to the host. - 5 of 92 - PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 PRODUCT PREVIEW , . PRODUCT PREVIEW TXC-05806-MB, Ed. 6 August 2003 - 6 of 92 - Proprietary TranSwitch Corporation TranSwitch
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TXC-05806 CUBIT-622
Abstract: designs incorporating the product. PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 - 2 of 92 - , . 86 - 3 of 92 - PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 Proprietary TranSwitch , PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 - 4 of 92 - Proprietary TranSwitch Corporation Information , the assertion of CONG on the CellBus. PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 - 6 of 92 - , of packet for an AAL5 designated flow. - 9 of 92 - PRELIMINARY TXC-05806-MB, Ed. 7 October 2003 TranSwitch
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Abstract: designs incorporating the product. PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 - 2 of 92 - , . 86 - 3 of 92 - PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 PRODUCT PREVIEW , -05806) Block Diagram PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 - 4 of 92 - Proprietary , extracted to the host. - 5 of 92 - PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 PRODUCT PREVIEW , . PRODUCT PREVIEW TXC-05806-MB Ed. 4, January 2003 - 6 of 92 - Proprietary TranSwitch Corporation TranSwitch
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Abstract: ) 5£2 I d(O N ) (min) 75mA Order Number / Package TO-92 2N7000 Features Free from secondary , thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and , Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVD SS b v dgs TO-92 , 2N7000 Thermal Characteristics Package lD (continuous)* ID (pulsed) Power Dissipation @ Tc = 25°C TO-92 , Turn-OFF Time Diode Forward Voltage Drop 75 VG s - 4.5V, VDS=10V VG S = 4.5V, lD = 75mA VG S = 10V -
OCR Scan
Abstract: 1 2 3 Reference Anode Cathode 5 1 2 3 TO-92 (TAPING) Ph as ed SOT-25A (TOP , a lot of ranges of the application as a zener diode besides the replacement is possible because it , be adjusted 3. Low Dynamic Output Impedance VREF=1.260V±0.8% VREFVo12V ZKA =0.13 typ. TO-92 , 2 VA * TO-92 Package du c -30~+85 12 50 50 -40~+125 300 (TO-92) 150 (SOT-25A) VREF~12 1~30 , Cathode current Ph as ed O (Ambient Temperature, Ta=25°C) V mA VKA IK ut Pr o IREF Pd Mitsumi
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C 12 PH Zener diode C 12 PH zener C 15 PH Zener diode C 13 PH Zener diode MM1530AT zener ph 015 MM1530 MM1530AT/AN MM1431AT/AN
Abstract: , France (43) 72.75.75 ED_13, ED_76, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 , , 72003 Le Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , Mans, France (43) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules , ) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 -
OCR Scan
thyristor MTT 25 N 14 SCR Phase Control SCR TN 22 1500 ED76 DIODE marking ED A12U BP107 ED430816 ED430616 ED7212130Z 0DDS201 1S697
Abstract: paralleling Low C|SS and fa st sw itch ing spe ed s E xcelle nt th e rm a l stab ility Integral S ou rce-D ra in diode High input im p ed ance and high gain C o m p le m e n ta ry N- and P -channel d e vice s , TO-92 V N 0 30 0L High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A , the po w e r handling ca p a b ilitie s o f b ipo lar tra n sisto rs and w ith the high input im p ed , , high input im pedance, low input cap acita nce , and fa st sw itch ing spe ed s are desired -
OCR Scan
VN0300
Abstract: Sonnenschein Li hium Ba ery is a componen ha can be permanen y connec ed o a circui , in many cases for he , sea ed case. The herme ica y sea ed case is essen ia for he ong she f ife and inheren safe y of , in he marke and more han 50 mi ion ba eries in he fie d wi h no repor ed inciden s. The comp e e , very ow se f discharge on he she f and during opera ion. I is bes sui ed for ow curren s. I may need , Underwri ers Labora ories are re evan . The ce s shou d no be connec ed in series wi h an e ec rica -
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SL-386 Sonnenschein SL-770 Sonnenschein SL-340 ica 700 Y SL-340 diode ed 85 Sonnenschein SL-361 SL-389 SL-700 SL-740 SL-789 SL-786
Abstract: ) 72.75.15 ED_13, ED_16, ED41_20 Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 , WIMEREX ED_ ED41 _ _16 _20 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 , Dual SCR SCR/Diode Isolated Modules 130-160-200 Amperes 100-2400 Volts -[â  c â'"' !r ¡ L* & ! ! / * àw f\ ® ® if E£ j \ â'" I 0 I -A- r r Dual SCR, SCR/Diode , Dual SCR, SCR/Diode Isolated Modules 130-160-200 Amperes/100-2400 Volts Ordering Information Example -
OCR Scan
ED 05 Diode ed13 diode DIODE ED 16 5000 volt scr thyristor scr 800A 12v DC motor speed control using scr CR08AS MAX/10
Abstract: (max) 1.8V 1.8V (min) 0.15A 0.15A TO-92 V N 3 51 5L VN 4012L 3 5 0V 4 0 0V Features , fa s t sw itch ing speeds E xcelle nt the rm a l sta b ility Integral S ou rce-D ra in diode High input im p ed ance and high gain C o m p le m e n ta ry N- and P -channel devices Advanced DMOS , ith the high input im p ed ance and positive te m p e ra tu re co e fficie n t in he r ent in M O S , breakdow n volta ge , high input im pedance, low input cap acita nce , and fa st sw itch ing spe ed s are -
OCR Scan
VN3515L VN4012L
Abstract: paralleling Low C |S S and fa st sw itch ing spe ed s E xcellent th e rm a l stab ility Integral S ou rce-D ra in diode High input im p ed ance and high gain C o m p le m e n ta ry N- and P -channel d e vice s , arking fo r SOT-23: (max) 6Q (max) -2.0 V TO-92 T P 21 05N 3 Die T P 21 05N D w h e re 0 , im p ed ance and po sitive te m p e ra tu re co e fficie n t in he r e nt in M O S devices. C h a ra , , high input im pedance, lo w input cap acita nce , and fa st sw itch ing spe ed s are desired -
OCR Scan
TP2105 TP2105K1
Abstract: Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 Units A , . Max. Units â'"â'"â'" â'"â'"â'" â'"â'"â'" 290 9.2 17 mJ A mJ Typ. Single Pulse , Junction-to-Ambient (PCB Mounted,steady-state) Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage International Rectifier
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IRFS9N60A
Abstract: symbol ­­­ ­­­ 9.2 showing the A G integral reverse ­­­ ­­­ 37 S p-n junction diode. ­­­ ­­­ , Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 Units A W W/°C V , Typ. Max. Units ­­­ ­­­ ­­­ 290 9.2 17 mJ A mJ Typ. Single Pulse Avalanche , ) Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body International Rectifier
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diode ED 68
Abstract: Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 Units A W W/°C V , Typ. Max. Units ­­­ ­­­ ­­­ 290 9.2 17 mJ A mJ Typ. Single Pulse Avalanche , ) Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse International Rectifier
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EIA-418
Abstract: Avalanche Current G> 9.2 A Ear Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt Q , Drain Current (Tc=25 °c) 9.2 A 'd Continuous Drain Current (Tc=100°C) 6.5 'dm Drain , 100 V RDS(on) = 0.2Q. ID = 9.2 A TO-220 â'¢V 1 .Gate 2. Drain 3. Source This Material , © Qgs Gate-Source Charge - 2.7 - Qgd Gate-Drain("Miller") Charge - 7.8 - Source-Drain Diode , Continuous Source Current - - 9.2 A Integral reverse pn-diode in the MOSFET 'sM Pulsed-Source Current © - - -
OCR Scan
IRF520A
Abstract: ED N Applications R2 Distributed power architectures Telecommunication equipment Servers , (MLPD) (1) Thermal Resistance Junction to Case (MLPD) N O FO T R R EC N O EW M M D EN ES D IG ED N , mV N O FO T R R EC N O EW M M D EN ES D IG ED N 10V VDD 28V, IOUT 1mA 1mA IO 100mA 7.3 , D IG ED N CSS = 0.1, current limit condition Hiccup Hiccup duty cycle Gate Drive 1 % , 4.58V VCC 2.75V 1.3V 0.8V 0.5V SS/EN N O FO T R R EC N O EW M M D EN ES D IG ED N EAO Semtech
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SC4612 MLPD-12 SOIC-14 MS-012 IPC-SM-782A
Abstract: SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol 's Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current ® MIN APT6030HJN TYP MAX 23 UNIT Amps APT6030HJN 92 *SM (Body Diode) Diode Forward Voltage ® (VQS - 0V, lg - - lD [Cont.]) Reverse , G ate-Source Voltage Total Power Dissipation @ T c - 25°C UNIT Volts 92 ±3 0 360 2.9 -55 to , ro p e r H andling P ro c ed u res S h ould Be Follow ed. 405 S.W. COLUMBIA STREET BEND, OREGON -
OCR Scan
HU49 ISOTOP E145592 6030HJN
Abstract: 92 ED GROKULSKY REV-10 6/13/97 Chip Sets and Reference Designs PAGE-0 Detailed , Crosspoint Switches ATE, Time Domain & Laser Diode Drivers Page 66 Active Loads, Pin Drivers , Window Comparators & Infinite S/H Page 67 Delay Generators, Pulse Width Modulators & Laser Diode , Control: DSP BASED Page 92 Chip Sets and Reference Designs Direct Digital Synthesis Page , Product to Frequency Converter Page 12/28/99 12:50 PM 110 Power Management ED GROKULSKY -
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audio power amplifiers with transistors Sample Rate Converters DIODE ED 99 Instrumentation Amplifiers syncro single CHIP ac motor speed control 20MSPS
Abstract: 25-90 Amp · SCR/DIODE Modules Industry Standard Package and Grcuits Power Control Building Blocks , e f f c e n t th em a l m anagem e n t f c r g i e a t ÿ exten d ed cycfe life an d aie U L i e oe g , ELECTRICAL SPECIFICATIONS Current 27 - 25 Am ps 42 - 40 Am ps 57 - 55 Am ps 92 - 90 Am ps C i r c u i t , SPECIFICATION vF Tj 27 42 57 92 d i/d t d v /d t Vrrm Maximum DC Output Current (Tc = 85°Q M , SERIES F18.062498, PAGE 1 OF 2 25-90 Amp · SCR/DIODE Modules · Industry Standard Package and Grcuits -
OCR Scan
BFE 75A F18-C D-66687
Abstract: l co m. Cat Dua hod l co e m. A Trip nod le is e ola t ed Qua d Cro ss R ing VR , BAT 60A/B Characteristics: · Single diode in small SOD 323 package · Extreme low forward voltage , application · Detection and step-up conversion BAT 165 Characteristics: · Single diode in small SOD , protection · Clamping BAT 240 Characteristics: · Dual diode in SOT 23 package (halfbridge rectifier) · High voltage applications Applications: · Ultra fast rectifier diode for modem application · Infineon Technologies
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68W SOT ultra low noise 12GHz 64W SOT23 BAT 43 - 46 - 85 - 86 BAS 68-04 BAS 40-04 Infineon B132-H7456-GI-X-7600
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