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CS8952-CQZ Cirrus Logic Ethernet Transceiver, 1-Trnsvr, CMOS, PQFP100, LEAD FREE, TQFP-100
CS8952-IQZ Cirrus Logic Ethernet Transceiver, 1-Trnsvr, CMOS, PQFP100, LEAD FREE, TQFP-100
CS8900A-IQ3ZR Cirrus Logic LAN Controller, 2 Channel(s), CMOS, PQFP100, LEAD FREE, MS-026, LQFP-100
CS8900A-IQZ Cirrus Logic LAN Controller, 2 Channel(s), CMOS, PQFP100, LEAD FREE, MS-026, LQFP-100
CS8900A-CQ3Z Cirrus Logic LAN Controller, 2 Channel(s), CMOS, PQFP100, LEAD FREE, MS-026, LQFP-100
CS8900A-IQ3Z Cirrus Logic LAN Controller, 2 Channel(s), CMOS, PQFP100, LEAD FREE, MS-026, LQFP-100

DIAC BR 100

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes (DIAC) Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80 DO-213AA Weight , BR 100/03 LLD . BR 100/04 LLD Typical characteristic of a DIAC ­ Typische DIAC-Kennlinie Test , 50.+100/C ­ 50.+150/C Kennwerte dV/dt = 10V/:s BR 100/03 LLD BR 100/031 LLD BR 100/04 LLD SEMIKRON
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DIAC diac 5v diac 5v vbo datasheet DIAC diac vbo 10V DIAC thyristor UL94V-0
Abstract: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes (DIAC) Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80 DO-213AA Weight , BR 100/03 LLD . BR 100/04 LLD Typical characteristic of a DIAC ­ Typische DIAC-Kennlinie Test , /dt = 10V/:s BR 100/03 LLD BR 100/031 LLD BR 100/04 LLD VBO VBO VBO Breakdown current ­ Diotec
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DIAC EQUIVALENT circuit vbo-35 diac terminals DIAC EQUIVALENT DIAC DATASHEET do213a
Abstract: DO-35, DO-41 DIAC BI-DIRECTIONAL TRIGGER DIODE FOR USE WITH HUTSON INDUSTRIES THYRISTORS DO , Diac-Triac Full-wave Phase Control Circuit for peak output voltage test Load up to 1500 watts DIAC o- AVA , +i HUTSON INDUSTRIES DIAC'S BI-DIRECTIONAL TRIGGER DIODE FOR USE WITH HUTSON INDUSTRIES , Part Number V(BR), ancl V(BR)2 Volts IV (BR),] " [V(BR)J l(BR)i and ,(BR)2 mA Min. D , . 100 100 100 Special devices available; consult factory. * Add Suffix fo r package style desired. A -
OCR Scan
diac D30 D30 DIAC DIAC 5 VOLT D40 DIAC diode D40 D60 DIAC
Abstract: BR 100/03 DO-41 . BR 100/04 DO-41 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakdown voltage Durchbruchsspannung 28 . 45 V Peak pulse current ­ Max , Kennwerte dV/dt = 10V/:s BR 100/03 DO-41 BR 100/031 DO-41 BR 100/04 DO-41 VBO VBO VBO , Gehäuse auf Umgebungstemperatur gehalten werden 394 28.02.2002 BR 100/03 DO-41 . BR 100/04 DO-41 Typical characteristic of a DIAC ­ Typische DIAC-Kennlinie Test circuit for a thyristor trigger ­ Diotec
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DO-204AL bidirectional diode thyristor diac br diac DO41 BR 40100 bidirectional trigger diac
Abstract: BR 100/03 DO-41 . BR 100/04 DO-41 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakdown voltage Durchbruchsspannung 28 . 45 V Peak pulse current ­ Max , Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © by SEMIKRON 020404 1 BR 100/03 DO-41 . BR 100/04 DO-41 Typical characteristic of a DIAC ­ Typische DIAC-Kennlinie Test , Kennwerte dV/dt = 10V/:s BR 100/03 DO-41 BR 100/031 DO-41 BR 100/04 DO-41 VBO VBO VBO SEMIKRON
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of DIAC br 100 diac semikron thyristor
Abstract: voltage Durchbruchspannung dV/dt = 10V/us BR 100/03 DO-41 BR 100/031 DO-41 BR 100/04 DO-41 V = 98 % VBO , BR100/03 DO-41 . BR100/04 DO-41 Bidirectional Si-Trigger-Diodes (DIAC) Version 2004-10-01 Bidirektionale Si-Trigger-Dioden (DIAC) 28 . 45 V ±2A DO-41 DO-204AL Breakover voltage Durchbruchsspannung Ø 2.6 -0.1 Peak pulse current Max. Triggerimpuls Plastic case Kunststoffgehäuse Plastic material , 418 BR100/03 DO-41 . BR100/04 DO-41 Typical characteristic of a DIAC ­ Typische Diotec
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diac power DIAC Br100
Abstract: Temperature Range TJ - 40 OC to +100 OC Glass Case DO-35 Dimensions in mm MAXIMUM RATINGS at 50 OC , DB4 Min. 28 36 35 V(BR)1 and V(BR)2 Max. Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - 200 uA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V , Impedance Junction to Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep 120 VAC 60 Hz TRIAC 200 K CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 u F 100 V Semtech Electronics
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DB3 ST ST diac DB3 DIAC DB3 diac DB3 application note EQUIVALENT NO. OF DB3 DIAC thyristor ts 23
Abstract: Operating Temperature Range TJ - 40 OC to +100 OC MAXIMUM RATINGS at 50 OC Ambient Peak Current (10 us , V(BR)1 and V(BR)2 Max. Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - 200 uA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage , Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep 120 VAC 60 Hz TRIAC 200 K CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 u F 100 V BILATERAL TRIGGER Semtech Electronics
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diac triac control circuit motor DIAC-Triac applications diac with triac DIAC-Triac thyristor motor speed control circuit universal MOTOR speed control
Abstract: Operating Temperature TJ - 40 OC to + 100 OC MAXIMUM RATINGS at 50 OC Ambient Peak Current (10 usec , 32 36 35 V(BR)1 and V(BR)2 Typ. 40 Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - - 200 uA Breakover Voltage Symmetry [V(BR)1]-[ V(BR)2] - - 3.8 , O TYPICAL DIAC-TRIAC FULL-WAVE PHASE CONTROL CIRCUIT LOAD UP TO 1500 DIAC WATTS , TRIGGER DIAC SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a Semtech Electronics
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triac and diac diac triac Low Voltage DIACs DIACS DIAC-Triac* 120v LSDB-4 LS-34
Abstract: Temperature Range Operating Temperature Range TJ - 40 OC to +100 OC MAXIMUM RATINGS at 50 OC Ambient Peak , V(BR)1 and V(BR)2 Max. Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - 200 uA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage , Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep 120 VAC 60 Hz TRIAC 200 K CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 u F 100 V BILATERAL TRIGGER Semtech Electronics
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diac data sheet diac bidirectional diode diac 8 v
Abstract: OC to +100 OC Glass Case DO-35 Dimensions in mm MAXIMUM RATINGS at 50 OC Ambient Peak Current , (BR)1 and V(BR)2 Max. Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - 200 uA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage , Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep 120 VAC 60 Hz TRIAC 200 K CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 u F 100 V BILATERAL TRIGGER Semtech Electronics
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db3 diac range db3 diac DIAC DB3 EQUIVALENT equivalent for DIAC DB3 DIAC DO35
Abstract: Current Vbo NTE Type Number Breakover Voltage (Forward & Reverse) (Volts) l{BR)1 & l(BR)2 100 Minimum Switching Voltage Change (Both Directions) (Volts) Ipulse 2 , 130 28 ± 4 6408 130 32 ± 4 100 2 6 250 6411 130 40 + 5 100 2 6 250 6412 130 63 + 7 100 2 6 250 DESCRIPTION: The NTE6407, NTE6408 , . The DIAC semiconductor is a full-wave or bidirectional thyristor. It is triggered from a -
OCR Scan
NTE6404 D07/D035 NTE6411 NTE6412
Abstract: DIACS DB-3 SILICON BIDIRECTIONAL DIAC The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate , 's Storage Temperature Tstg - 40 °C to + 150 °C Operating Temperture Tj - 40 °C to + 100 °C MAXIMUM , . Units Breakover Voltage V(BR)1 and V , VOLTAGE TEST DIAC 60-120 V 0.1MI x_ 20ii CHARACTERISTICS at 25'C Ambient TYPICAL DIAC-TRIAC -
OCR Scan
diacs DB-3 DIACS low current DB3 DIAC Bi-directional Trigger Diode diode db3 triacs speed
Abstract: 0.5 M BR 100 0.1 F http://www.diotec.com/ VGM >5V © Diotec Semiconductor AG , BR100-03 . BR100-04 BR100-03 . BR100-04 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung -0.1 5.1-0.1 Type 62.5±0.5 Ø 2.6 Ø 0.8±0.05 Dimensions - Maße [mm] 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Plastic case Kunststoffgehäuse DO-41 DO-204AL Weight approx Diotec
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BR100 Diac BR100-031
Abstract: 1.6 100 200 500 350 1 30 M ax 14 386 Forw ard Voltage Drop (Volts , (Forw ard & Reverse) (Volts) V BO l(BR)1 & l(BR)2 'pulse AV Pd 6407 130 28 ±4 100 2 6 250 6408 130 32 ±4 100 2 6 250 6411 130 40 ±5 100 2 6 250 6412 130 63 ±7 100 2 6 250 DESCRIPTION: The NTE6407 , 63 Volts. The DIAC semiconductor is a full-wave or bidirectional thyristor. It is triggered from a -
OCR Scan
NTE6405
Abstract: 2 0.5 Mï" BR 100 0.1 ï'ºF http://www.diotec.com/ VGM >5V © Diotec Semiconductor , BR100-03LLD . BR100-04LLD BR100-03LLD . BR100-04LLD Surface Mount Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden für die Oberflächenmontage (DIAC) Version 2006-04-27 Type Typ 3.5 0.4 DO-213AA Weight approx. â'" Gewicht ca. 0.4 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF 1.6 Breakover voltage Durchbruchspannung Plastic Diotec
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BR100-031LLD
Abstract: ï'©VR 10 kï" 230 V ~ 50 Hz 2 0.5 Mï" BR 100 0.1 ï'ºF http://www.diotec.com , DB3 . DB4 DB3 . DB4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case Glas-Gehäuse DO-35 SOD-27 Weight approx. Gewicht ca. Ø 0.52 0.13 g Standard packaging taped in ammo pack Standard Diotec
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Abstract: DO-35 DIAC All dimensions in Inches. ELECTRICAL CHARACTERISTICS (Tc = 25°C) Breakover Voltage Breakover Voltage Symmetry Dynamic Breakback Voltage Breakover Current V(BR)1, and V(BR)2 Volts [V(BR)1] - [V (BR)2] [DV±] I(BR)1, and I(BR)2 uA Part Number Peak Pulse Current for , -30A 28 32 36 3 5 100 2.0 D-40A 35 40 45 3 5 100 2.0 D-60A 56 60 70 4 10 100 1.6 Note: Special devices available,consult factory. For tape -
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D-30A D40A number diac D-30A/T
Abstract: DB-3 SILICON BIDIRECTIONAL DIAC Features The three-layer, two terminal, axial lead , TJ -40 to +100 Maximum ratings at 50 ambient Peak current (10uSec duration, 120 cycle repetition , . Typ. Max. Units Breakover voltage V(BR)1 and V(BR)2 28 32 36 Volts Breakover currents I(BR)1 and I(BR)2 - - 200 uAmp Breakover voltage symmetry [V(BR)1]-[V(BR)2] - - 3.8 Volts - - 60 /W Thermal Impedance Junction to Ambient Good-Ark
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Abstract: DIAC CHIPS BREAKOVER VOLTAGE BREAKOVER VOLTAGE TYPE CHIP SIZE V(BR)i and V(BR)¡ BREAKOVER CURRENTS l(BR), and l(BR )2 SYMMETRY [V(BR),] - V(BR)2] VO LTS ß AM P VO LTS MIN TYP MAX MAX M AX 30 50= 28 32 36 100 3 40 50* 35 40 45 100 4 60 50! 56 60 70 100 5 SIDAC CHIPS CHIP TYPE SIZE 'd r m ¿/A (Max) 'h mA (Max , ) (Max) 'T (RMS) 't s m (Typ) (Max) 105 502 ±90 95 113 1 20 10 100 -
OCR Scan
DIAC 502 502 diac
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