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Part Manufacturer Description PDF & SAMPLES
SLPX392M063C5P3 Cornell Dubilier Electronics Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 63V, 3900uF, THROUGH HOLE MOUNT, ROHS COMPLIANT
CMR04F361JOAP Cornell Dubilier Electronics Inc CAPACITOR, MICA, 100V, 0.00036uF, THROUGH HOLE MOUNT, RADIAL LEADED
CGS632U075R5L Cornell Dubilier Electronics Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75V, 6300uF, CHASSIS MOUNT, ROHS COMPLIANT
MC22FF561J-TF Cornell Dubilier Electronics Inc CAPACITOR, MICA, 1000V, 0.00056uF, SURFACE MOUNT, 2220, ROHS COMPLIANT
AFK106M80E16B-F Cornell Dubilier Electronics Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 80V, 10uF, SURFACE MOUNT, 3733, ROHS COMPLIANT
CMR04F101FPDM Cornell Dubilier Electronics Inc CAPACITOR, MICA, 500V, 0.0001uF, THROUGH HOLE MOUNT, RADIAL LEADED

DIAC BR 100

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes (DIAC) Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80 DO-213AA Weight , BR 100/03 LLD . BR 100/04 LLD Typical characteristic of a DIAC ­ Typische DIAC-Kennlinie Test , 50.+100/C ­ 50.+150/C Kennwerte dV/dt = 10V/:s BR 100/03 LLD BR 100/031 LLD BR 100/04 LLD SEMIKRON
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DIAC diac 5v diac 5v vbo datasheet DIAC diac vbo 10V DIAC thyristor UL94V-0
Abstract: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes (DIAC) Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80 DO-213AA Weight , BR 100/03 LLD . BR 100/04 LLD Typical characteristic of a DIAC ­ Typische DIAC-Kennlinie Test , /dt = 10V/:s BR 100/03 LLD BR 100/031 LLD BR 100/04 LLD VBO VBO VBO Breakdown current ­ Diotec
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DIAC EQUIVALENT circuit vbo-35 diac terminals DIAC EQUIVALENT DIAC DATASHEET do213a
Abstract: DO-35, DO-41 DIAC BI-DIRECTIONAL TRIGGER DIODE FOR USE WITH HUTSON INDUSTRIES THYRISTORS DO , Diac-Triac Full-wave Phase Control Circuit for peak output voltage test Load up to 1500 watts DIAC o- AVA , +i HUTSON INDUSTRIES DIAC'S BI-DIRECTIONAL TRIGGER DIODE FOR USE WITH HUTSON INDUSTRIES , Part Number V(BR), ancl V(BR)2 Volts IV (BR),] " [V(BR)J l(BR)i and ,(BR)2 mA Min. D , . 100 100 100 Special devices available; consult factory. * Add Suffix fo r package style desired. A -
OCR Scan
diac D30 D30 DIAC DIAC 5 VOLT D40 DIAC diode D40 D60 DIAC
Abstract: BR 100/03 DO-41 . BR 100/04 DO-41 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakdown voltage Durchbruchsspannung 28 . 45 V Peak pulse current ­ Max , Kennwerte dV/dt = 10V/:s BR 100/03 DO-41 BR 100/031 DO-41 BR 100/04 DO-41 VBO VBO VBO , Gehäuse auf Umgebungstemperatur gehalten werden 394 28.02.2002 BR 100/03 DO-41 . BR 100/04 DO-41 Typical characteristic of a DIAC ­ Typische DIAC-Kennlinie Test circuit for a thyristor trigger ­ Diotec
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DO-204AL bidirectional diode thyristor diac br diac DO41 BR 40100 bidirectional trigger diac
Abstract: BR 100/03 DO-41 . BR 100/04 DO-41 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakdown voltage Durchbruchsspannung 28 . 45 V Peak pulse current ­ Max , Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © by SEMIKRON 020404 1 BR 100/03 DO-41 . BR 100/04 DO-41 Typical characteristic of a DIAC ­ Typische DIAC-Kennlinie Test , Kennwerte dV/dt = 10V/:s BR 100/03 DO-41 BR 100/031 DO-41 BR 100/04 DO-41 VBO VBO VBO SEMIKRON
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of DIAC br 100 diac semikron thyristor
Abstract: voltage Durchbruchspannung dV/dt = 10V/us BR 100/03 DO-41 BR 100/031 DO-41 BR 100/04 DO-41 V = 98 % VBO , BR100/03 DO-41 . BR100/04 DO-41 Bidirectional Si-Trigger-Diodes (DIAC) Version 2004-10-01 Bidirektionale Si-Trigger-Dioden (DIAC) 28 . 45 V ±2A DO-41 DO-204AL Breakover voltage Durchbruchsspannung Ø 2.6 -0.1 Peak pulse current Max. Triggerimpuls Plastic case Kunststoffgehäuse Plastic material , 418 BR100/03 DO-41 . BR100/04 DO-41 Typical characteristic of a DIAC ­ Typische Diotec
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diac power DIAC Br100
Abstract: Temperature Range TJ - 40 OC to +100 OC Glass Case DO-35 Dimensions in mm MAXIMUM RATINGS at 50 OC , DB4 Min. 28 36 35 V(BR)1 and V(BR)2 Max. Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - 200 uA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V , Impedance Junction to Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep 120 VAC 60 Hz TRIAC 200 K CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 u F 100 V Semtech Electronics
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DB3 ST ST diac DB3 DIAC DB3 diac DB3 application note EQUIVALENT NO. OF DB3 DIAC thyristor ts 23
Abstract: Operating Temperature Range TJ - 40 OC to +100 OC MAXIMUM RATINGS at 50 OC Ambient Peak Current (10 us , V(BR)1 and V(BR)2 Max. Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - 200 uA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage , Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep 120 VAC 60 Hz TRIAC 200 K CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 u F 100 V BILATERAL TRIGGER Semtech Electronics
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diac triac control circuit motor DIAC-Triac applications diac with triac DIAC-Triac thyristor motor speed control circuit universal MOTOR speed control
Abstract: Operating Temperature TJ - 40 OC to + 100 OC MAXIMUM RATINGS at 50 OC Ambient Peak Current (10 usec , 32 36 35 V(BR)1 and V(BR)2 Typ. 40 Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - - 200 uA Breakover Voltage Symmetry [V(BR)1]-[ V(BR)2] - - 3.8 , O TYPICAL DIAC-TRIAC FULL-WAVE PHASE CONTROL CIRCUIT LOAD UP TO 1500 DIAC WATTS , TRIGGER DIAC SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a Semtech Electronics
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triac and diac diac triac Low Voltage DIACs DIACS DIAC-Triac* 120v LSDB-4 LS-34
Abstract: Temperature Range Operating Temperature Range TJ - 40 OC to +100 OC MAXIMUM RATINGS at 50 OC Ambient Peak , V(BR)1 and V(BR)2 Max. Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - 200 uA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage , Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep 120 VAC 60 Hz TRIAC 200 K CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 u F 100 V BILATERAL TRIGGER Semtech Electronics
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diac data sheet diac bidirectional diode diac 8 v
Abstract: OC to +100 OC Glass Case DO-35 Dimensions in mm MAXIMUM RATINGS at 50 OC Ambient Peak Current , (BR)1 and V(BR)2 Max. Unit 45 V Breakover Currents I(BR)1 and I(BR)2 - 200 uA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage , Ambient Air DIAC load up to 1500 W 3.3 K 60~ 120 V 1) 0.1 uF 20 ep 120 VAC 60 Hz TRIAC 200 K CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.1 u F 100 V BILATERAL TRIGGER Semtech Electronics
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db3 diac range db3 diac DIAC DB3 EQUIVALENT equivalent for DIAC DB3 DIAC DO35
Abstract: Current Vbo NTE Type Number Breakover Voltage (Forward & Reverse) (Volts) l{BR)1 & l(BR)2 100 Minimum Switching Voltage Change (Both Directions) (Volts) Ipulse 2 , 130 28 ± 4 6408 130 32 ± 4 100 2 6 250 6411 130 40 + 5 100 2 6 250 6412 130 63 + 7 100 2 6 250 DESCRIPTION: The NTE6407, NTE6408 , . The DIAC semiconductor is a full-wave or bidirectional thyristor. It is triggered from a -
OCR Scan
NTE6404 D07/D035 NTE6411 NTE6412
Abstract: DIACS DB-3 SILICON BIDIRECTIONAL DIAC The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate , 's Storage Temperature Tstg - 40 °C to + 150 °C Operating Temperture Tj - 40 °C to + 100 °C MAXIMUM , . Units Breakover Voltage V(BR)1 and V , VOLTAGE TEST DIAC 60-120 V 0.1MI x_ 20ii CHARACTERISTICS at 25'C Ambient TYPICAL DIAC-TRIAC -
OCR Scan
diacs DB-3 DIACS low current DB3 DIAC Bi-directional Trigger Diode diode db3 triacs speed
Abstract: 0.5 M BR 100 0.1 F http://www.diotec.com/ VGM >5V © Diotec Semiconductor AG , BR100-03 . BR100-04 BR100-03 . BR100-04 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung -0.1 5.1-0.1 Type 62.5±0.5 Ø 2.6 Ø 0.8±0.05 Dimensions - Maße [mm] 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Plastic case Kunststoffgehäuse DO-41 DO-204AL Weight approx Diotec
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BR100 Diac BR100-031
Abstract: 1.6 100 200 500 350 1 30 M ax 14 386 Forw ard Voltage Drop (Volts , (Forw ard & Reverse) (Volts) V BO l(BR)1 & l(BR)2 'pulse AV Pd 6407 130 28 ±4 100 2 6 250 6408 130 32 ±4 100 2 6 250 6411 130 40 ±5 100 2 6 250 6412 130 63 ±7 100 2 6 250 DESCRIPTION: The NTE6407 , 63 Volts. The DIAC semiconductor is a full-wave or bidirectional thyristor. It is triggered from a -
OCR Scan
NTE6405
Abstract: 2 0.5 Mï" BR 100 0.1 ï'ºF http://www.diotec.com/ VGM >5V © Diotec Semiconductor , BR100-03LLD . BR100-04LLD BR100-03LLD . BR100-04LLD Surface Mount Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden für die Oberflächenmontage (DIAC) Version 2006-04-27 Type Typ 3.5 0.4 DO-213AA Weight approx. â'" Gewicht ca. 0.4 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF 1.6 Breakover voltage Durchbruchspannung Plastic Diotec
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BR100-031LLD
Abstract: ï'©VR 10 kï" 230 V ~ 50 Hz 2 0.5 Mï" BR 100 0.1 ï'ºF http://www.diotec.com , DB3 . DB4 DB3 . DB4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case Glas-Gehäuse DO-35 SOD-27 Weight approx. Gewicht ca. Ø 0.52 0.13 g Standard packaging taped in ammo pack Standard Diotec
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Abstract: DO-35 DIAC All dimensions in Inches. ELECTRICAL CHARACTERISTICS (Tc = 25°C) Breakover Voltage Breakover Voltage Symmetry Dynamic Breakback Voltage Breakover Current V(BR)1, and V(BR)2 Volts [V(BR)1] - [V (BR)2] [DV±] I(BR)1, and I(BR)2 uA Part Number Peak Pulse Current for , -30A 28 32 36 3 5 100 2.0 D-40A 35 40 45 3 5 100 2.0 D-60A 56 60 70 4 10 100 1.6 Note: Special devices available,consult factory. For tape -
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D-30A D40A number diac D-30A/T
Abstract: DB-3 SILICON BIDIRECTIONAL DIAC Features The three-layer, two terminal, axial lead , TJ -40 to +100 Maximum ratings at 50 ambient Peak current (10uSec duration, 120 cycle repetition , . Typ. Max. Units Breakover voltage V(BR)1 and V(BR)2 28 32 36 Volts Breakover currents I(BR)1 and I(BR)2 - - 200 uAmp Breakover voltage symmetry [V(BR)1]-[V(BR)2] - - 3.8 Volts - - 60 /W Thermal Impedance Junction to Ambient Good-Ark
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Abstract: DIAC CHIPS BREAKOVER VOLTAGE BREAKOVER VOLTAGE TYPE CHIP SIZE V(BR)i and V(BR)¡ BREAKOVER CURRENTS l(BR), and l(BR )2 SYMMETRY [V(BR),] - V(BR)2] VO LTS ß AM P VO LTS MIN TYP MAX MAX M AX 30 50= 28 32 36 100 3 40 50* 35 40 45 100 4 60 50! 56 60 70 100 5 SIDAC CHIPS CHIP TYPE SIZE 'd r m ¿/A (Max) 'h mA (Max , ) (Max) 'T (RMS) 't s m (Typ) (Max) 105 502 ±90 95 113 1 20 10 100 -
OCR Scan
DIAC 502 502 diac
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