500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : APT77N60JC3 Supplier : Microsemi Manufacturer : Future Electronics Stock : - Best Price : $23.68 Price Each : $30.28
Part : APT77N60JC3 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : 1,044 Best Price : $26.17 Price Each : $28.36
Part : APT77N60JC3 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 1,044 Best Price : $34.6000 Price Each : $41.50
Shipping cost not included. Currency conversions are estimated. 

APT77N60JC3 Datasheet

Part Manufacturer Description PDF Type
APT77N60JC3 Microsemi COOLMOS MOSFET Original

APT77N60JC3

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S , °C unless otherwise specified. APT77N60JC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous , Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT77N60JC3 Test , ID, DRAIN CURRENT (AMPERES) APT77N60JC3 VGS =15 &10V 6V & 6.5V 5.5V 0.00999 0.00421F 160 , LIMITED BY RDS (ON) 60,000 APT77N60JC3 Ciss ID, DRAIN CURRENT (AMPERES) 10,000 Coss 1,000 Advanced Power Technology
Original
transistors mj 1504 7N60JC3 APT30DF60
Abstract: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , specified. Parameter APT77N60JC3 UNIT Drain-Source Voltage 600 Volts ID Continuous , CHARACTERISTICS Symbol APT77N60JC3 Test Conditions Characteristic MIN TYP C iss Input , Case temperature. (°C) 180 VGS =15 &10V 180 0.00999 200 APT77N60JC3 200 RC MODEL , R td(off) 500 td(on) and td(off) (ns) APT77N60JC3 60,000 OPERATION HERE LIMITED BY Advanced Power Technology
Original
Abstract: APT77N60JC3 0.035 600V 77A Super Junction MOSFET S S C OLMOS O 27 2 T- D , APT77N60JC3 UNIT 600 Volts Drain-Source Voltage 77 Continuous Drain Current @ TC = 25 , G 11-2009 Symbol DYNAMIC CHARACTERISTICS Symbol APT77N60JC3 Test Conditions , Typical Performance APT77N60JC3 200 VGS =15 &10V TC ( C) 0.00999 0.0212 0.0724 0.116 , ) APT77N60JC3 60,000 1000 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 Microsemi
Original
Abstract: APT77N60JC3 600V 77A Super Junction MOSFET · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra , °C unless otherwise specified. APT77N60JC3 600 77 231 ±20 ±30 568 4.55 -55 - to 150 300 50 20 3 UNIT , Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT77N60JC3 Test Conditions VGS , ) 200 180 160 140 120 100 80 60 40 20 0 APT77N60JC3 VGS =15 &10V 6V & 6.5V 5.5V 5V 4.5V 4V , ) 60,000 APT77N60JC3 Ciss 10,000 DC line C, CAPACITANCE (pF) 100 Coss 1,000 10 10s Microsemi
Original
mj 1504 77A DIODE ce 77a diode 77a E145592
Abstract: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , Symbol S All Ratings: TC = 25°C unless otherwise specified. Parameter APT77N60JC3 UNIT , Conditions 050-7146 Rev F Symbol DYNAMIC CHARACTERISTICS Symbol APT77N60JC3 Test Conditions , PULSE DURATION 1.0 Typical Performance Curves APT77N60JC3 200 VGS =15 &10V TC ( C , Typical Performance Curves APT77N60JC3 60,000 ID, DRAIN CURRENT (AMPERES) Ciss Graph Microsemi
Original
Abstract: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S SO ISOTOP ® 2 T- 27 · Ultra low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · N-Channel Enhancement Mode · Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage "UL Recognized" D G S All Ratings: TC = 25°C unless otherwise specified. APT77N60JC3 UNIT Volts Amps Advanced Power Technology
Original
MIL-STD-750
Abstract: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S SO ISOTOP ® 2 T- 27 · Ultra low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · N-Channel Enhancement Mode · Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage "UL Recognized" D G S All Ratings: TC = 25°C unless otherwise specified. APT77N60JC3 UNIT Volts Amps Advanced Power Technology
Original
ID77A
Abstract: 31 APT31N80JC3 ISOTOP® 600 0.035 77 APT77N60JC3 TO-220[K] D3 PAK[S] TO Advanced Power Technology
Original
APT100GF60LR 1200 volt mosfet FREDFETs APT75GP120JDF3 APT609RK3VFR sot-227 footprint ISO9001 MIL-PRF-19500
Abstract: 600 APT11N80KC3 0.450 800 11 47 APT47N60SC3 D3 77 APT77N60JC3 ISOTOP Microsemi
Original
VRF2933 ARF1511 DRF1200 APT35GP120JDQ2 SP6-P ARF521
Abstract: APTGT50DH120TG 47 APT47N60BC3G TO-247 0.070 47 APT47N60SC3G D3 0.035 77 APT77N60JC3 D3 Microsemi
Original
smps 1000W 600V 300A igbt dc to dc boost converter DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 10F-A
Abstract: APL502J APT100F50J APT100S20B APT1204R7K APT10026L2FLLG APT34N80LC3 TO-264 800 0.145 31 APT31N80JC3 ISOTOP® 600 0.035 77 APT77N60JC3 Microsemi
Original
SOT-227 lead frame 5kw smps full bridge S.M.P.S 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 PLAD15KP SMBx6.0A DO-41 RT100KP
Abstract: APTGU180A120 APTLM50H10FRT APT47N65BC3G APT47N60BC3G APT77N60JC3 APT94N60L2C3G APT47N60BCFG APT60N60BCSG Package Style TO-247 TO Advanced Power Technology
Original
catalog mosfet Transistor smd APTGU140A60T APTGU180DA120 military resistors catalog APT40M35JVFR APT5SC120K
Abstract: APTES80DA120C3G APT35DL120HJ 0.070 47 APT47N60BC3G TO-247 or D3 600 0.035 77 APT77N60JC3 ISOTOPÂ Microsemi
Original
N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN 45A, 1200v n-channel npt series igbt IGBT triple modules 100A semiconductors cross reference 2000W mosfet power inverter