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Part : APT50M60JN Supplier : Microsemi Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
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APT50M60 Datasheet

Part Manufacturer Description PDF Type
APT50M60DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan
APT50M60JN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original
APT50M60JVFR Advanced Power Technology POWER MOS V FREDFET Original
APT50M60JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original
APT50M60JVR Microsemi Power MOS V MOSFET Original
APT50M60L2VFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original
APT50M60L2VFR Microsemi Power MOS V FREDFET Original
APT50M60L2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original
APT50M60L2VR Microsemi Power MOS V MOSFET Original

APT50M60

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ADVANCED POWER TECHNOLOGY ^C^E D QD(4) â¡ESTTCH OOOÃSÃb 4bb HAVP ADVANCED Power APT50M60BFN 500V 78.0A 0.060 # APT45M60BFN 450V 78.0A 0.060;^ POWER MOS IVâ"¢ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE , APT50M60BFN umt ^dss Drain-Source Voltage 450 500 IW â d Continuous Drain Current ^ 78 'dm Pulsed Drain , Drain-Source Breakdown Voltage |jA) APT50M60BFN 500 Vf jla APT45M60BFN 450 VC Its 'dss Zero Gate Voltage , CHARACTERISTICS APT50M60/45M60BFN Symbol Characteristic Test Conditions MIN TYP MAX UNIT Clss Input -
OCR Scan
AN 780a 45M60 MC 78 M 05 CG y381 10OA/ MIL-STD-750
Abstract: AD VA NC ED PO WER T E C H N O L O G Y MIE D GE571DE I GÜÜÜSflb Mbb * A V P APT50M60BFN 500V 78.0A 0.060 9 APT45M60BFN 450V 78.0A 0.060 Î Ï A dvanc ed POWER T-3°l-l5 Te c h n o lo g y . POWER MOS IVTM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M03 FETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise; 405 S.W. COLUMBIA STREET BEND, OREGON 97702-1035 U.S.A. PHONE . , onditions MIN APT50M60/45M60BFN TYP MAX UNIT Cl8S ^OSS CrM Qo Q0s Q -
OCR Scan
diode ED 68 APT50M60/45M60BFN
Abstract: APT50M60L2VR 500V 77A 0.060W POWER MOS V ® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds , otherwise specified. APT50M60 UNIT 500 Parameter Volts AL IC HN EC ON T I ED AT NC RM , 050-5986 rev- 11-2000 Symbol DYNAMIC CHARACTERISTICS Symbol APT50M60L2VR Characteristic Advanced Power Technology
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ed 77A DIODE 77A DIODE DIODE ED 92
Abstract: APT Product Selector Guide b v dss w!Zá (watts) 520 520 520 520 690 520 520 520 690 520 690 520 520 690 690 520 690 690 A d vanced POW ER TE2HN0L0GY' PART NUMBER APT10M13JNR+ APT20M25JNR+ APT30M45JNR+ APT40M75JN APT40M42JN APT5010JN APT5012JNU2* APT5012JNU3* APT50M60JN APT6015JN APT60M90JN APT8030JNFR* APT8030JN APT8018JNFR* APT8018JN APT10050JN APT10026JN APT10026JNR+ PAGE NUMBER 4-7 8-11 12-15 16-19 20-23 24-27 62-68 69-75 28-31 32-35 36-39 40-41 42-45 46-47 48-51 52-55 56-59 60-61 (Volts) 100 -
OCR Scan
APT5012
Abstract: o w er Te c h n o l o g y ® APT50M60JNF 500V 71A 0.060Ã2 ISOTOP' S tt" U L Recognized" File , Symbol Characteristic / Test Conditions / Part Number MIN APT50M60JNF Drain-Source Breakdown Voltage b v dss r ds ( ° n ) MAX Volts APT50M60JNF 71 Amps (VDS > lD(ON) x R ds(ON) Max, VQS = 10V) Drain-Source On-State Resistance ® 0.060 APT50M60JNF Ohms (VGS=10V , 0.5 , APT50M60JNF Characteristic Test Conditions MIN TYP MAX 12900 14500 2220 3120 C -
OCR Scan
E145592 50M60JNF
Abstract: APT50M60JVFR 500V 63A POWER MOS V® FREDFET 0.060 S S 27 2 T- D G Power , otherwise specified. Parameter APT50M60JVFR UNIT Drain-Source Voltage 500 Volts ID , Ciss APT50M60JVFR Characteristic Test Conditions Input Capacitance Coss Reverse , ) APT50M60JVFR VGS =15 & 10V 8V 160 7.5V 140 120 7V 100 80 6.5V 60 40 6V 20 , and tf (ns) td(on) and td(off) (ns) Ciss 10,000 100 1 APT50M60JVFR 20,000 Advanced Power Technology
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TJ125 APT60DF60
Abstract: Table of Contents · · · · · · · · W UAAdvanced P ow er T rn tiu n t nirr® Page No. 1 2 3 4-75 76 77 78 Back Cover ISOTOP® Products Product Selector Guide Features/Benefits Product Datasheets US and Canadian Representative Sales Offices US and Canadian Distributor Sales Offices International Representative and Distributor Sales Offices APT Sales Offices Alpha Numeric Index Part No. MOSFETVFREDFETls APT10M13JNR APT20M25JNR APT30M45JNR APT40M75JN APT40M42JN APT5010JN APT50M60JN APT6015JN APT60M90JN -
OCR Scan
apt20m25 10026JNR
Abstract: A d van ced P o w er Te c h n o l o g y " APT50M60JNF 500V 71A 0.060Í2 ISOTOP1 ,S M "U L , Breakdown Voltage APT50M60JNF MIN TYP MAX UNIT 500 Volts ®VD S S (VGS = 0V, lD - 8.0 mA) On State Drain C u rrent© APT50M60JNF l0(ON) 71 Amps (VDS > lD(ON) x Rns(ON) Max, VQS = 10V , = 0V) APT50M60JNF Rds(ON) 0.060 Ohms 8 mA ' dss ' gss V gs(TH) Zero Gate Voltage , Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test C onditions MIN TYP APT50M60JNF MAX -
OCR Scan
LS 14500
Abstract: APT100S20B APT50M60L2VR APT12080JVR APT12040JVR APT10050JVR APT10043JVR APT10025JVR APT8030JVR APT8028JVR , APT50M60L2VFR NEW 1000 0.500 0.250 0.300 0.150 0.100 0.085 0.050 0.040 0.019 0.022 0.011 19 Advanced Power Technology
Original
ARF450 mj 1504 transistor equivalent FREDFETs APT60GF120JRD transistors mj 1504 APT4014BVR ISO9001 MIL-PRF-19500 ARF1500
Abstract: APTGU180A120 APTLM50H10FRT APT60M80L2VR APT60M80L2VFR 500 0.060 77 APT50M60L2VR APT50M60L2VFR 1400 0.500 23 , APT50M85JVR APT50M60JVR APT50M50JVR APT5010JVFR APT50M85JVFR APT50M60JVFR APT50M50JVFR Package Advanced Power Technology
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catalog mosfet Transistor smd APTGU140A60T APTGU180DA120 military resistors catalog APT40M35JVFR APT5SC120K
Abstract: S S D D G G 27 2 T- SO APT50M60JN 500V 71A 0.06O S "UL Recognized , ) Characteristic / Test Conditions / Part Number APT50M60JN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 uA) On State Drain Current MIN TYP MAX 500 Volts 2 APT50M60JN 71 Amps , APT50M60JN Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V , 050-5038 Rev E Symbol APT50M60JN DYNAMIC CHARACTERISTICS Symbol Characteristic Test Advanced Power Technology
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N mos 100v 100A 50M60JN
Abstract: A d v a n ced P o w er Te c h n o l o g y ® APT50M60JN 500V 71A 0.060Q ISOTOP* yiiX"UL , CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN APT50M60JN TYP MAX UNIT BV d v , Voltage Drain Current (VDg = V Dgs, VQS = 0V) 500 Volts id (o n ) APT50M60JN 71 Amps R ds (ON) APT50M60JN 0.060 Ohms 250 ma *DSS Zero Gate Voltage Drain Current (VDS = 0.8 V DSS , ) 56 47 97 61 Page 28 DYNAMIC CHARACTERISTICS Symbol C iss C oss APT50M60JN Test -
OCR Scan
Abstract: APT50M60L2VR 0.060â"¦ 500V 77A POWER MOS V® MOSFET TO-264 Max Power MOS V® is a new , °C unless otherwise specified. Parameter APT50M60L2VR UNIT Drain-Source Voltage 500 Volts , DYNAMIC CHARACTERISTICS Symbol APT50M60L2VR Test Conditions Characteristic MIN TYP Ciss , , JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT50M60L2VR 200 VGS =15 & 10V RC , ) APT50M60L2VR 20,000 OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF) ID, DRAIN CURRENT Advanced Power Technology
Original
Abstract: 700 APT50M60DN 500 0.06 APT45M60DN 450 0.06 / DIE APT40M42DN 400 0.042 â  'ACK -
OCR Scan
APT-106 APT40M80DN APT801R2DN mos die co257 APT601R3DN APT5025DN APT35M80DN APT20M40DN APT10021DN APT9021DN APT8016DN APT7516DN
Abstract: APT60M80L2VR APT60M80L2VFR 500 0.060 77 APT50M60L2VR APT50M60L2VFR 1400 0.500 23 , 0.100 0.085 0.060 0.050 44 50 63 77 APT5010JVR APT50M85JVR APT50M60JVR APT50M50JVR APT510JVFR APT50M85JVFR APT50M60JVFR APT50M50JVFR 400 0.035 93 300 0.040 0.019 70 130 Microsemi
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sot-227 footprint VRF2933 ARF1511 DRF1200 APT35GP120JDQ2 SP6-P
Abstract: ADVANCED PO W ER Tec h n o lo g y* OD APT50M60JN ôs 500V 71A 0.060Q "UL Recognized , / Part Number MIN APT50M60JN Drain-Source Breakdown Voltage b v dss (V g s = 0V- l D = MAX 500 Volts APT50M60JN 71 Amps (VDS> l0(ON) x Rds(ON) Max, VGS = 10V) Rds(ON , Resistance® 0.060 APT50M60JN Ohms (VQS = 10V, 0.5 lD [Cont.]) Zero Gate Voltage Drain Current , CHARACTERISTICS Symbol APT50M60JN Characteristic Test Conditions TYP MAX 11640 MIN 14000 -
OCR Scan
Abstract: 520 5570 240 APT5010JN 71.0 690 11640 475 APT50M60JN 0.075 56.0 520 Advanced Power Technology
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apt1004rbn APT5010LVFR APT4020BN APT5014LVR arf444 APT10M09LVR
Abstract: APT50M60JVR 0.060â"¦ 500V 63A POWER MOS V® MOSFET D G Power MOS V® is a new , . Parameter APT50M60JVR UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ , APT50M60JVR Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output , THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT50M60JVR , VOLTAGE (VOLTS) APT50M60JVR 20,000 OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF Advanced Power Technology
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Abstract: APT60M80L2VR APT60M80L2VFR 500 0.060 77 APT50M60L2VR APT50M60L2VFR 1400 0.500 23 , 50 63 77 APT5010JVR APT50M85JVR APT50M60JVR APT50M50JVR APT5010JVFR APT50M85JVFR APT50M60JVFR APT50M50JVFR 11 Package Style TO-247[B] D3 PAK[S] Part Numbers for D3 packages - Advanced Power Technology
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APT100GF60LR 1200 volt mosfet APT75GP120JDF3 APT609RK3VFR APT8075BVR APT1001RBVR
Abstract: APT50M60JVR 500V 63A POWER MOS V® MOSFET S S 27 2 T- D G Power MOS V® is , APT50M60JVR UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25 , TYP 050-7250 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT50M60JVR Test Conditions , ) APT50M60JVR VGS =15 & 10V 8V 160 7.5V 140 120 7V 100 80 6.5V 60 40 6V 20 , and tf (ns) td(on) and td(off) (ns) Ciss 10,000 100 1 APT50M60JVR 20,000 Advanced Power Technology
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APT50M
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