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77A DIODE

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Abstract: Gate-Drain Charge Qgd VDS = -6V, ID = -7.7A, VGS = -4.5V 6 nC 14 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward , CEM9424 CEM9424 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V, -7.7A, RDS(ON , Characteristics gFS VGS = VDS, ID = -250uA -1 V VGS = -4.5V, ID = -7.7A -0.6 20 25 m VGS = -2.5V, ID = -6.6A 29 35 m VDS = -10V, ID = -7.7A 23 S 2130 pF 760 ... Chino-Excel Technology
Original
datasheet

4 pages,
363.01 Kb

CEM9424 TEXT
datasheet frame
Abstract: seal. RATING 1. Absolute maximum ratings (Ambient temperature: 25°C 77°F) Item Symbol LED , °C 77°F) Item AQY221R2S AQY221R2S (R type) Symbol LED operate current Input LED turn off current , . Load current vs. Load voltage characteristics Ambient temperature: 25°C 77°F 3. On resistance vs , portion: between terminals 3 and 4 Ambient temperature: 25°C 77°F 1.5 1 AQY221R2S AQY221R2S Current , ); Continuous load current: 250mA (DC) [R type], 80mA (DC) [C type]; Ambient temperature: 25°C 77 ... NAiS
Original
datasheet

6 pages,
158.25 Kb

TEXT
datasheet frame
Abstract: , single pulse mJ ID =77 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/us IS =77A, VDS , =44V, ID =77A VDD =44V, ID =77A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode , Inverse diode forward voltage VSD VGS =0V, IF =77A - 1 1.3 V Reverse recovery time , Rise time tr ID =77A, RG =6.2 - 27 40 Turn-off delay time td(off) - 34 50 , =44V, ID=77A - 5.9 - V IS - - 77 A - - 308 ns Gate Charge ... Infineon Technologies
Original
datasheet

8 pages,
514.94 Kb

SPP77N06S2-12 SPB77N06S2-12 140W S6030 BSPP77N06S2-12 smd diode 77a smd diode marking 77 2n0612 TEXT
datasheet frame
Abstract: Characteristics Parameter Min. Typ. Max. Units Test Conditions Is Continuous Source Current (Body Diode) - - 7.7 A MOSFET symbol showing the n\— integral reverse B-U [*1 p-n junction diode. d Ism Pulsed Source Current (Body Diode) © — - 31 y s Vsd Diode Forward Voltage — — 1.6 V Tj=25°C, ls=7.7A , possible in typical surface mount applications. IRLU014 IRLU014 VDSS=60V RDS(on) = 0.20Q lD = 7.7A Absolute , Single Pulse Avalanche Energy © 47 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 V/ns Tj, Tstg Junction ... OCR Scan
datasheet

6 pages,
169.19 Kb

IRLR014 AN-994 IRLU014 TEXT
datasheet frame
Abstract: Application Note Light Emitting Diode コーティング剤について 目次 1 , €‚ Light Emitting Diode 表 1 コーティング剤の評価について 評価項目 光の透過特æ , 0.00 -0.10 -0.05 0.00 y 色調 塗布後 0.10 0.05 y Light Emitting Diode , ™‚間:200H Light Emitting Diode ・コーティング剤 C において 顕著な劣化を確認 D , 塗布なし コーティング剤B 77° 77° 110° 110° 表 6 撥水性検証試験çuæžœ ... Nichia
Original
datasheet

6 pages,
213.93 Kb

TA 7129 TEXT
datasheet frame
Abstract: CEM9425 CEM9425 may 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -20V, -7.7A , Current-Continuous" @Tj=125°C -Pulsedb Id ±7.7 a idm ±30 a Drain-Source Diode Forward Currenta is -2.3 a , Resistance Rds(on) Vgs=-4.5V, Id=-7.7A 22 30 mfì Vgs=-2.5V, Id=-6.6A 33 48 mQ On-State Drain Current Id(on) Vds=-5V, Vgs=-4.5V -30 A Forward Transconductance 9fs Vds=-10V, Id=- 7.7A 23 S DYNAMIC , -7.7A, Vgs =-4.5V 46 80 nC Gate-Source Charge Qgs 6 nC Gate-Drain Charge Qgd 13 nC 5-118 ... OCR Scan
datasheet

5 pages,
501.07 Kb

DIODE S2v 0,5 CEM9425 diode S2v 32 TEXT
datasheet frame
Abstract: GE Measurement & Control Solutions NTC Diode Thermometrics Thermistors A range of NTC chip thermistors in DO-35 DO-35 style glass package (diode outline) with axial soldercoated copper-clad , 77°F (25°C) • Reference temperatures in the range 0°F to 302°F (-18°C to 150°C) â , thermistors in DO-35 DO-35 style glass package (diode outline formed for surface lead-wires and applications) with , DKA302M2 DKA302M2 for 3000 Ω ±2% at 77°F (25°C) • Reference temperatures in the range 32°F to 302°F (0 ... GE Sensing & Inspection Technologies
Original
datasheet

8 pages,
125.68 Kb

smd diode 77a TEXT
datasheet frame
Abstract: P-CHANNEL FEATURES: -200 Volt, 0.5 Ohm, -7.7A MOSFET Isolated Hermetic Metal Package Fast Switching Low , 1.0 mA STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = -10V, ID = -4.9A VGS = -10V, ID = -7.7A GATE , , RISE TIME ID = -7.7A, TURN OFF DELAY TIME RG = 9.1W, FALL TIME VGS = -10V TOTAL GATE CHARGE VGS = -10V, ID = -7.7A VDS = 0.5 x VDS Max GATE TO SOURCE ON-STATE VOLTAGE VGS = -10V, ID = -7.7A, VDS = 0.5 x VDS Max GATE DRAIN CHARGE VGS = -10V, ID = -13A, VDS = VDS Max. x 0.8 DIODE FORWARD VOLTAGE TC = 25C ... Sensitron Semiconductor
Original
datasheet

2 pages,
29.58 Kb

SHD226410 TEXT
datasheet frame
Abstract: MAY 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -20V, -7.7A, Rds(on , Current-Continuous3 @Tj=125°C -Pulsedb Id ±7.7 a idm ±30 a Drain-Source Diode Forward Currenta is -2.3 a , On-State Resistance Rds(ON) Vgs=-4.5V, Id=-7.7A 19 25 mß Vgs=-2.5V, Id=-6.6A 24 35 mil On-State Drain Current Id(on) Vds=-5V,Vgs=-4.5V -30 A Forward Transconductance 9fs Vds=-10V, Id =-7.7A 23 S , -7.7A, Vgs =-4.5V 46 80 nC Gate-Source Charge Qgs 6 nC Gate-Drain Charge Qgd 13 nC 5-113 ... OCR Scan
datasheet

5 pages,
500.75 Kb

DIODE S2v 32 CEM9424 DIODE S2v TEXT
datasheet frame
Abstract: Characteristics Parameter Min. Typ. Max. Units Test Conditions Is Continuous Source Current (Body Diode) - — -7.7 A MOSFET symbol showing the / I integral reverse e\ p-n junction diode. d ) s Ism Pulsed Source Current (Body Diode) © - — -31 Vsd Diode Forward Voltage — — -6.3 V Tj=25°C, ls=-7.7A, VGs , using a single clip or by a single screw fixing. VDSS=-100V -100V RDS(on) = 0.30Q lD = -7.7A Absolute , Avalanche Energy © 4.2 mJ dv/dt Peak Diode Recovery dv/dt ® -5.5 V/ns Tj Operating Junction and -55 to ... OCR Scan
datasheet

6 pages,
173.97 Kb

LS77 IRFI9530G CD 1517 TEXT
datasheet frame