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77A DIODE

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Abstract: VDS=VGS ID=250uA VGS=4.5V, VDS=5V VGS=10V, ID=7.7A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance Diode Forward Voltage VDS=5V, ID=7.7A IS=1A,VGS=0V TJ=125° C , Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/us A: The , 30V ID = 7.7A (VGS = 10V) RDS(ON) < 21m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) 100% UIS Tested 100% Rg , =10V, VDS=15V, ID=7.7A 3.5 1.3 1.7 4.5 VGS=10V, VDS=15V, RL=1.95, RGEN=3 IF=7.7A, dI/dt=100A/us 2.7 14.9 2.9 ... Alpha & Omega Semiconductor
Original
datasheet

4 pages,
373.68 Kb

RL20 rectifier diode AO4842 TEXT
datasheet frame
Abstract: APT50M60L2VR APT50M60L2VR 500V 77A 0.060 POWER MOS V® MOSFET TO-264 Max Power MOS V® is a new , Gate-Drain ("Miller ") Charge td(on) ID = 77A @ 25°C td(off) tf 25 VDD = 250V RG = 0.6 , Switching Energy Eoff 8 INDUCTIVE SWITCHING @ 25°C 6 1510 VDD = 333V, VGS = 15V ID = 77A , ID = 77A @ 25°C Turn-off Delay Time nC 20 VGS = 15V Rise Time pF 285 RESISTIVE SWITCHING Turn-on Delay Time tr 10600 VGS = 0V VDD = 333V, VGS = 15V ID = 77A, RG ... Advanced Power Technology
Original
datasheet

5 pages,
156.03 Kb

77A DIODE APT50M60L2VR TEXT
datasheet frame
Abstract: Diode Forward Voltage Variation with Source Current 50 5 VDS=-6V ID=-7.7A 4 -ID, Drain , , -7.7A , RDS(ON)=25m @VGS=-4.5V. RDS(ON)=35m @VGS=-2.5V. D D D D 8 7 6 5 , ID 7.7 A IDM 30 A Drain-Source Diode Forward Current a IS -2.3 A , On-State Drain Current VGS = -4.5V, ID = -7.7A 29 35 m VDS = -5V, VGS = -4.5V A -30 23 S 2130 PF 760 PF 127 VDS = -10V, ID = - 7.7A PF c DYNAMIC ... Chino-Excel Technology
Original
datasheet

5 pages,
38.61 Kb

CEM9424 TEXT
datasheet frame
Abstract: =4.5V, ID=5A 23.4 gFS Forward Transconductance VDS=5V, ID=7.7A 20 VSD Diode Forward , =15V, RL=1.95Ω, RGEN=3Ω 2.7 ns 14.9 ns IF=7.7A, dI/dt=100A/Âus 10.5 Body Diode , ) = 30V ID = 7.7A (VGS = 10V) RDS(ON) < 21mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) 100% UIS , mΩ mΩ S 1 V 2.4 A 448 pF 67 pF 41 pF VGS=10V, VDS=15V, ID=7.7A , Rg ÂuA 100 VGS=10V, ID=7.7A Crss Units 11 nC 3.5 nC 1.3 nC Qgd ... Alpha & Omega Semiconductor
Original
datasheet

4 pages,
383.77 Kb

AO4842 TEXT
datasheet frame
Abstract: Diode Forward Voltage IS=1A,VGS=0V IS 25 VDS=5V, ID=7.7A Maximum Body-Diode Continuous , Turn-Off Fall Time Qrr VGS=5V, VDS=10V, RL=1.4Ω, RGEN=3Ω 40.5 ns 10 ns IF=7.7A, dI/dt=100A/Âus 18.8 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/Âus 8.1 ns nC , =4.5V, VDS=5V 30 TJ=55° C 5 10 VGS=4.5V, ID=7.7A Units ÂuA ÂuA V 0.73 1 V A , =4.5V, VDS=10V, ID=7.7A nC 2 nC nC Qgd Gate Drain Charge 3.9 tD(on) Turn-On ... Alpha & Omega Semiconductor
Original
datasheet

4 pages,
395.98 Kb

AON5810 TEXT
datasheet frame
Abstract: 16 6 ±20 158 -55. +175 55/175/56 kV/us V W °C mJ Avalanche energy, single pulse ID =77A, VDD =25V, RGS =25 Repetitive avalanche energy, limited by Tjmax 1) Reverse diode dv/dt IS =77A, VDS , 180 20 40 50 39 ns VDD=30V, VGS=10V, ID=77A, R G=6.2 - 9 18 45 5.9 12 28 60 - nC V(plateau) VDD=44V, I D=77A V Reverse Diode Inverse diode continuous forward current Inv. diode direct , charge total Gate plateau voltage Q gs Q gd Qg VDD=44V, I D=77A, VGS=0 to 10V VDD=44V, I D=77A Symbol ... Infineon Technologies
Original
datasheet

8 pages,
572.37 Kb

infineon 2n0612 smd diode 77a 2n0612 SPP77N06S2-12 SPB77N06S2-12 TEXT
datasheet frame
Abstract: ISM Inverse diode forward voltage VSD VGS =0V, IF =77A - 1 1.3 V Reverse , EAS 280 Repetitive avalanche energy, limited by Tjmax 1) EAR 16 Reverse diode dv/dt , -55. +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=77A, V DD=25V, RGS=25 kV/us IS=77A, V DS=44V, di/dt=200A/us, Tjmax=175°C TC=25°C Operating and , Rise time tr ID =77A, - 27 40 Turn-off delay time td(off) RG =6.2 - 34 ... Infineon Technologies
Original
datasheet

8 pages,
309.35 Kb

77A DIODE BSPB77N06S2-12 SPB77N06S2-12 SPP77N06S2-12 BSPP77N06S2-12 infineon 2n0612 smd diode 77a 2n0612 TEXT
datasheet frame
Abstract: IF=7.7A, dI/dt=100A/Âus 18.8 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/Âus 8.1 , mΩ VGS=1.8V, ID=4A 32 40 mΩ VDS=5V, ID=7.7A 28 1 V 2.5 A VDS=0V, VGS=±10V VGS=4.5V, ID=7.7A TJ=125°C RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous , „¦ S 1360 VGS=4.5V, VDS=10V, ID=7.7A pF pF 1.5 Ω 13.1 VGS=0V, VDS=0V, f ... Alpha & Omega Semiconductor
Original
datasheet

4 pages,
117.96 Kb

AON5810 TEXT
datasheet frame
Abstract: Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current IS VDS=5V, ID=7.7A , Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7.7A, dI/dt=100A/us 15.7 20 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/us 7.9 10 Qrr m 142 Turn-On , other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related , . n-channel p-channel VDS (V) = 30V -30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m ... Alpha & Omega Semiconductor
Original
datasheet

7 pages,
139.56 Kb

d62a A2 N-Channel AOP610L AOP610 TEXT
datasheet frame
Abstract: , RGS =25 Reverse diode dv/dt IS =-7.7A, VDS =-24V, di/dt=200A/us, Tjmax =150°C Gate source , voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, IF=-7.7A VR =-15V, |IF | = |lD |, diF /dt=100A/us Qgs Qgd Qg VDD =-24V, ID =-7.7A - -4.25 -15.2 , =-7.7A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 um thick) copper area for ... Infineon Technologies
Original
datasheet

8 pages,
82.35 Kb

smd diode 77a Q67042-S4010 BSO303P TEXT
datasheet frame

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