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77A DIODE

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Abstract: TYP dv 1 3 dv 77 (Body Diode) 231 (VGS = 0V, IS = -77A) 1 UNIT Amps , DD I = 77A Eoff T = 125°C J L = 100μH 5000 EON includes diode reverse recovery , APT77N60BC6 APT77N60BC6 APT77N60SC6 APT77N60SC6 600V C OLMOS O 77A 0.041 Super Junction MOSFET Power , 144 18 INDUCTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 25°C RG = 5.0 27 110 165 8 INDUCTIVE SWITCHING @ 25° C VDD = 400V, VGS = 15V ID = 77A, RG = 5 5 UNIT 290 ... Microsemi
Original
datasheet

5 pages,
141.38 Kb

APT77N60BC6 APT77N60SC6 TEXT
datasheet frame
Abstract: SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 77A, RG = 5 3100 SOURCE-DRAIN DIODE RATINGS AND , (Body Diode) 3 (VGS = 0V, IS = -77A) 1 UNIT Amps 1.2 Volts 15 V/ns /dt Peak Diode Recovery /dt t rr Reverse Recovery Time (IS = -77A, di/dt = 100A/s) Tj = 25 , APT77N60BC6 APT77N60BC6 APT77N60SC6 APT77N60SC6 600V C OLMOS O 77A 0.041 Super Junction MOSFET Power , INDUCTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 25°C RG = 5.0 5 UNIT 290 VGS = 10V VDD = ... Microsemi
Original
datasheet

5 pages,
140.55 Kb

APT77N60SC6 APT77N60BC6 TEXT
datasheet frame
Abstract: integral reverse 1.3 p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e Conditions MOSFET , °C, ID = 1mA mΩ VGS = 10V, ID = 7.7A e VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 , VGS = -20V S VDS = 25V, ID = 7.7A nC VGS = 10V ––– Qgs2 VDS = 55V, VGS = 0V , Gate-to-Drain Charge ––– 3.5 ––– ID = 7.7A Qgodr ––– 3.0 ––â , Inductance ––– 7.5 ––– Ω VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5â ... International Rectifier
Original
datasheet

7 pages,
256.01 Kb

IRFI4024H-117P TEXT
datasheet frame
Abstract: p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed , Conditions VGS = 0V, ID = 250uA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 7.7A e VGS(th , 25uA S VDS = 25V, ID = 7.7A nC VGS = 10V Total Gate Charge ­­­ 8.9 13 Qgs1 , 0.77 ­­­ Qgd Gate-to-Drain Charge ­­­ 3.5 ­­­ ID = 7.7A Qgodr ­­­ 3.0 , Inductance ­­­ 7.5 ­­­ VDS = 44V VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5 VGS ... International Rectifier
Original
datasheet

6 pages,
247.43 Kb

IRFI4024H-117P Digital audio MOSFET class d amplifier audio mosfet TEXT
datasheet frame
Abstract: Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max Units 30 V 2 VGS=4.5V, I D=4A VDS=5V, ID=7.7A Forward Transconductance IS=1A Diode Forward Voltage Maximum Body-Diode Continuous , other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related , p-channel -30V VDS (V) = 30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m (VGS ... Alpha & Omega Semiconductor
Original
datasheet

7 pages,
181.16 Kb

AOP610L AOP610 TEXT
datasheet frame
Abstract: Diode) Pulsed Source Current 1 Diode Forward Voltage Reverse Recovery Time (IS = -77A, dl S/dt = 100A/us) Peak Diode Recovery dv/ 4 dt Reverse Recovery Charge (IS = -77A, dlS/dt = 100A/us) L A , APT77N60JC3 APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S , 600 .030 1.0 0.035 50 500 ±200 2.1 3 3.9 (VGS = 10V, ID = 77A) Ohms uA nA Volts Zero Gate , 3 AP77N60JC3 AP77N60JC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 380V ID = 77A @ 25 ... Advanced Power Technology
Original
datasheet

2 pages,
35.72 Kb

APT77N60JC3 TEXT
datasheet frame
Abstract: D=77A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC , Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot , ID =77A, VDD =25V, RGS =25 kV/us IS =77A, VDS =44V, di/dt=200A/us, Tjmax=175°C TC , Turn-on delay time td(on) V DD=30V, V GS=10V, - 14 20 Rise time tr ID=77A, - , 39 V DD=44V, I D=77A - 9 12 - 18 28 - 45 60 V(plateau) V DD=44V, I D=77A ... Infineon Technologies
Original
datasheet

8 pages,
678.06 Kb

SPP77N06S2-12 SPB77N06S2-12 diode 77a BSPP77N06S2-12 77A DIODE S6030 smd diode 77a 2n0612 TEXT
datasheet frame
Abstract: VGS = 0V 2065 VDD = 333V, VGS = 15V ID = 77A, RG = 5Ω 3830 SOURCE-DRAIN DIODE RATINGS , 30 50 = 333V = 77A T = 125°C J 20,000 L = 100ÂuH EON includes Eoff diode , APT50M60L2VR APT50M60L2VR 0.060Ω 500V 77A POWER MOS V® MOSFET TO-264 Max Power MOS V® is a new , Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 77A @ 25°C td(off) tf 25 VDD = 250V ID = 77A @ 25°C Turn-off Delay Time Eon Turn-on ... Advanced Power Technology
Original
datasheet

5 pages,
155.54 Kb

APT50M60L2VR TEXT
datasheet frame
Abstract: =1.4, RGEN=3 40.5 ns 10 ns IF=7.7A, dI/dt=100A/us 18.8 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/us 8.1 ns nC Body Diode Reverse Recovery Time A: The value of R , 10 VGS=4.5V, ID=7.7A Units uA uA V 0.73 1 V A 11 14 18 16 21 , On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS 25 VDS=5V, ID=7.7A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input ... Alpha & Omega Semiconductor
Original
datasheet

4 pages,
395.77 Kb

AON5810L diode 77a AON5810 TEXT
datasheet frame
Abstract: =4.5V, ID=5A 23.4 gFS Forward Transconductance VDS=5V, ID=7.7A 20 VSD Diode Forward , =15V, RL=1.95Ω, RGEN=3Ω 2.7 ns 14.9 ns IF=7.7A, dI/dt=100A/Âus 10.5 Body Diode , ) = 30V ID = 7.7A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) 100% UIS , mΩ mΩ S 1 V 2.4 A 448 pF 67 pF 41 pF VGS=10V, VDS=15V, ID=7.7A , Rg ÂuA 100 VGS=10V, ID=7.7A Crss Units 11 nC 3.5 nC 1.3 nC Qgd ... Alpha & Omega Semiconductor
Original
datasheet

4 pages,
221.17 Kb

AO4842 TEXT
datasheet frame

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