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77A+DIODE

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Faster Switching · FAST RECOVERY BODY DIODE D G · Lower Leakage S MAXIMUM RATINGS Symbol , MIN VDD = 333V, VGS = 15V ID = 77A, RG = 5 uJ 3830 SOURCE-DRAIN DIODE RATINGS AND , (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN Peak Diode Recovery dt UNIT Amps (Body Diode) 308 (VGS = 0V, IS = -77A) 1.3 Volts , . IS -ID77A di/dt 700A/us VR 500V TJ 150°C 6 Eon includes diode reverse recovery. See figures 18 Advanced Power Technology
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APT50M60L2VFR APT60DF60 77A DIODE diode 77a TJ125
Abstract: , RG = 5 uJ 3100 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 77 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery , -77A, dl S/dt = 100A/us, VR = 350V) 46 uC dv/ Peak Diode Recovery dt dv/ 231 (Body Diode) 1 (VGS = 0V, IS = -77A) dt 1.2 Amps Volts 6 V/ns MAX UNIT 5 Microsemi
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APT77N60JC3 APT30DF60
Abstract: -227 Package · FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050 S Power MOS 7 is a new , SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions TYP MAX 77 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN Peak Diode Recovery dt dv/ UNIT Amps (Body Diode , Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without Advanced Power Technology
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APT55M50JFLL
Abstract: SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 77 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -77A, dl S /dt = 100A/us, VR , ) 46 uC dv/ Peak Diode Recovery dt dv/ 231 (Body Diode) 1 (VGS = 0V, IS = , -ID77A di/dt 700A/us VR VDSS TJ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Advanced Power Technology
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Abstract: DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns C 77 231 1 861 46 6 1.2 (Body Diode) (VGS = 0V, IS = - 77A) Reverse , , VR = 350V) Peak Diode Recovery dv /dt /dt 5 V/ns THERMAL CHARACTERISTICS Symbol RJC , circuit rather than the device itself. IS -ID77A di/dt 700A/s VR VDSS TJ 150°C 6 Eon includes diode Microsemi
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transistors mj 1504 mj 1504 ce 77a E145592
Abstract: Energy Rated â'¢ Faster Switching â'¢ FAST RECOVERY BODY DIODE D G â'¢ Lower Leakage S , SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS TYP MAX 77 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN Peak Diode Recovery dt UNIT Amps (Body Diode) 308 , VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves Advanced Power Technology
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Abstract: Switching Energy 165 12 ns uJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 77 231 1 861 3.2 6 MIN TYP MAX (Body Diode) (VGS = 0V , Recovery Charge (IS = -77A, dl S/dt = 100A/us, VR = 350V) Peak Diode Recovery dv/ dt 5 V/ns THERMAL , rather than the device itself. IS -ID77A di/dt 700A/us VR VDSS TJ 150°C 6 Eon includes diode reverse Advanced Power Technology
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7N60JC3
Abstract: die contact Diode Characteristics g Parameter IS @ TC = 25°C Continuous Source Current Min , p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed Source Current A VSD (Body Diode) c Diode Forward Voltage ­­­ ­­­ 1.3 trr , Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage International Rectifier
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IRFI4024H-117P digital audio mosfet 100w audio amplifier 77A MARKING
Abstract: Qg Min c VDS=-15V,ID=-7.7A, VGS=-10V nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage , 250 Crss 0 0 5 10 15 20 25 1.75 1.00 1.25 Figure 8. Body Diode Forward Voltage Variation with Source Current 1500 500 0.50 -VSD, Body Diode Forward Voltage(V SamHop Microelectronics
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STM4637 015X45
Abstract: J 3100 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN TYP 77 Continuous Source Current (Body Diode) 231 ISM Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = - 77A) 1 t rr Q rr Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/s, VR = 350V) /dt Peak Diode , rather than the device itself. IS -ID77A di/dt 700A/s VR VDSS TJ 150°C 6 Eon includes diode reverse Microsemi
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Abstract: DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN IS Pulsed Source Current VSD Diode Forward Voltage MAX Continuous Source Current (Body Diode) ISM TYP dv 1 3 dv 77 (Body Diode) 231 (VGS = 0V, IS = -77A) 1 UNIT Amps 1.2 Volts 15 6 V/ns /dt Peak Diode Recovery /dt t rr Reverse Recovery Time , includes diode reverse recovery. PAV = EAR*f . Pulse width tp limited by Tj max. 6 Maximum 125°C diode Microsemi
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APT77N60BC6 APT77N60SC6 APT77N60B
Abstract: SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 77A, RG = 5 3100 SOURCE-DRAIN DIODE RATINGS AND , Current (Body Diode) 77 ISM Pulsed Source Current 231 VSD Diode Forward Voltage 1 (Body Diode) 3 (VGS = 0V, IS = -77A) 1 UNIT Amps 1.2 Volts 15 V/ns /dt Peak Diode Recovery /dt t rr Reverse Recovery Time (IS = -77A, di/dt = 100A/s) Tj = 25 , power losses that can be calculated as 5 Eon includes diode reverse recovery. PAV = EAR*f . Pulse width Microsemi
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Abstract: of die contact Diode Characteristics g Parameter IS @ TC = 25°C Continuous Source Current , integral reverse 1.3 p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e Conditions MOSFET symbol ISM (Body Diode) Pulsed Source Current A VSD (Body Diode) c Diode Forward Voltage , ) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8 International Rectifier
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Abstract: die contact Diode Characteristics g Parameter IS @ TC = 25°C Continuous Source Current Min , p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed Source Current A VSD (Body Diode) c Diode Forward Voltage ­­­ ­­­ 1.3 trr , Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage International Rectifier
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audio mosfet class d amplifier
Abstract: other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related , Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max Units 30 V 2 VGS=4.5V, I D=4A VDS=5V, ID=7.7A Forward Transconductance IS=1A Diode Forward Voltage Maximum Body-Diode Continuous , ) Figure 6: Body diode characteristics 1.0 AOP610 N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL Alpha & Omega Semiconductor
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AOP610L 0E-06
Abstract: Time Turn-off Delay Time Current Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol , Diode) Pulsed Source Current 1 Diode Forward Voltage Reverse Recovery Time (IS = -77A, dl S/dt = 100A/us) Peak Diode Recovery dv/ 4 dt Reverse Recovery Charge (IS = -77A, dlS/dt = 100A/us) L A C I N H C N E T O I E AT C N RM A V FO D A IN 110 MIN TYP (Body Diode) 2 MAX UNIT Amps Advanced Power Technology
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MIL-STD-750
Abstract: Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot , D=77A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed I SM Inverse diode forward voltage VSD V GS , . capacitances 12 Forward character. of reverse diode C = f (VDS) I F = f (VSD) parameter: VGS =0V, f Infineon Technologies
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SPP77N06S2-12 SPB77N06S2-12 BSPP77N06S2-12 2n0612 smd diode 77a S6030 Q67060-S6029 2N0612 Q67060-S6030
Abstract: VGS = 0V 2065 VDD = 333V, VGS = 15V ID = 77A, RG = 5â"¦ 3830 SOURCE-DRAIN DIODE RATINGS , IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode , rr Reverse Recovery Charge (IS = -ID77A, dl S/dt = 100A/Âus) 17 ÂuC dv/ Peak Diode Recovery dt dv/ 308 (Body Diode) 1.3 (VGS = 0V, IS = -ID77A) dt Amps Volts 8 , /Âus VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Advanced Power Technology
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APT50M60L2VR
Abstract: On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS 25 , =1.4, RGEN=3 40.5 ns 10 ns IF=7.7A, dI/dt=100A/us 18.8 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/us 8.1 ns nC Body Diode Reverse Recovery Time A: The value of R Alpha & Omega Semiconductor
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AON5810 AON5810L 0E-04 0E-05
Abstract: =4.5V, ID=5A 23.4 gFS Forward Transconductance VDS=5V, ID=7.7A 20 VSD Diode Forward , tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=1.95â"¦, RGEN=3â"¦ 2.7 ns 14.9 ns IF=7.7A, dI/dt=100A/Âus 10.5 Body Diode Alpha & Omega Semiconductor
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AO4842
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