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77A DIODE

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Abstract: MIN VDD = 333V, VGS = 15V ID = 77A, RG = 5 uJ 3830 SOURCE-DRAIN DIODE RATINGS AND , Peak Diode Recovery dt UNIT Amps (Body Diode) 308 (VGS = 0V, IS = -77A) 1.3 Volts , APT50M60L2VFR APT50M60L2VFR 500V 77A 0.060 POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new , Faster Switching · FAST RECOVERY BODY DIODE D G · Lower Leakage S MAXIMUM RATINGS Symbol , ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 250V Turn-off ... Advanced Power Technology
Original
datasheet

5 pages,
156.91 Kb

diode 77a APT50M60L2VFR 77A DIODE APT60DF60 TEXT
datasheet frame
Abstract: -77A, dl S/dt = 100A/us, VR = 350V) 46 uC dv/ Peak Diode Recovery dt dv/ 231 (Body Diode) 1 (VGS = 0V, IS = -77A) dt 1.2 Amps Volts 6 V/ns MAX UNIT 5 , diode reverse recovery. 10000 8000 6000 4000 Eon 2000 1000 0 10 = 400V = 77A J , APT77N60JC3 APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , (VDS = 480V, ID = 77A, TJ = 125°C) 50 V/ns Amps IAR Repetitive Avalanche Current 7 ... Microsemi
Original
datasheet

5 pages,
256 Kb

APT77N60JC3 TEXT
datasheet frame
Abstract: -227 Package · FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050 S Power MOS 7 is a new , · Lower Gate Charge, Qg 77A D G S All Ratings: TC = 25°C unless otherwise specified , ) Turn-on Delay Time tr 3 VDD = 275V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 15V td(off) VDD = 275V Turn-off Delay Time tf ID = 77A @ 25°C Fall Time Turn-on Switching Energy Eoff INDUCTIVE SWITCHING @ 25°C Turn-off Switching Energy 6 Eon Eoff 1230 ID = 77A ... Advanced Power Technology
Original
datasheet

5 pages,
166.35 Kb

APT55M50JFLL TEXT
datasheet frame
Abstract: VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -77A, dl S /dt = 100A/us, VR , APT77N60JC3 APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , " from Case for 10 Sec. 300 Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) 50 , Delay Time tr ID = 77A @ 25°C tf 110 Turn-on Switching Energy Eoff Turn-off , Switching Energy 6 165 8 RG = 0.9 Eon ns 12 1670 VDD = 400V, VGS = 15V ID = 77A ... Advanced Power Technology
Original
datasheet

5 pages,
175.33 Kb

APT77N60JC3 TEXT
datasheet frame
Abstract: UNIT Amps Volts ns C 77 231 1 861 46 6 1.2 (Body Diode) (VGS = 0V, IS = - 77A) Reverse , 8000 6000 4000 2000 I = 77A D T = 125°C L = 100H EON includes diode reverse recovery. J T = , APT77N60JC3 APT77N60JC3 600V 77A Super Junction MOSFET · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra , : 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 400V, ID = 77A, TJ = 125°C) Avalanche , = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 10V VDD = ... Microsemi
Original
datasheet

5 pages,
169.47 Kb

diode 77a ce 77a APT77N60JC3 77A DIODE mj 1504 transistors mj 1504 TEXT
datasheet frame
Abstract: APT50M60L2VFR APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V® FREDFET TO-264 Max Power MOS V® is a , Energy Rated • Faster Switching • FAST RECOVERY BODY DIODE D G • Lower Leakage S , Qgd Gate-Drain ("Miller") Charge td(on) ID = 77A @ 25°C Turn-on Delay Time tr , 77A @ 25°C Fall Time Turn-on Switching Energy Eoff INDUCTIVE SWITCHING @ 25°C Turn-off Switching Energy 6 Turn-on Switching Energy Eoff ID = 77A, RG = 5Ω 3450 INDUCTIVE ... Advanced Power Technology
Original
datasheet

5 pages,
156.2 Kb

APT50M60L2VFR TEXT
datasheet frame
Abstract: Recovery Charge (IS = -77A, dl S/dt = 100A/us, VR = 350V) Peak Diode Recovery dv/ dt 5 V/ns THERMAL , °C J D J = 77A T = 125°C 6000 5000 4000 3000 2000 1000 L = 100uH EON includes diode , APT77N60JC3 APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S , Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) Repetitive Avalanche , Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 10V ... Advanced Power Technology
Original
datasheet

5 pages,
175.26 Kb

transistors mj 1504 APT77N60JC3 TEXT
datasheet frame
Abstract: p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed , Conditions VGS = 0V, ID = 250uA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 7.7A e VGS(th , 25uA S VDS = 25V, ID = 7.7A nC VGS = 10V Total Gate Charge ­­­ 8.9 13 Qgs1 , 0.77 ­­­ Qgd Gate-to-Drain Charge ­­­ 3.5 ­­­ ID = 7.7A Qgodr ­­­ 3.0 , Inductance ­­­ 7.5 ­­­ VDS = 44V VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5 VGS ... International Rectifier
Original
datasheet

7 pages,
251.54 Kb

IRFI4024H-117P 77A MARKING 100w audio amplifier digital audio mosfet TEXT
datasheet frame
Abstract: =-250uA VGS=-10V , ID=-7.7A -1 c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Min c VDS=-15V,ID=-7.7A, VGS=-10V nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND , (ON) (m ) Max Rugged and reliable. 30 @ VGS=-10V -30V Suface Mount Package. -7.7A 48 @ , uA -1.8 24 -3 30 V m ohm VGS=-4.5V , ID=-6.2A 36 48 m ohm VDS=-15V , ID=-7.7A , =-10V RGEN=6 ohm 15 28 98 28 ns ns ns ns VDS=-15V,ID=-7.7A,VGS=-10V 22 nC VDS=-15V,ID ... SamHop Microelectronics
Original
datasheet

7 pages,
156.11 Kb

77A DIODE STM4637 TEXT
datasheet frame
Abstract: Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = - 77A) 1 t rr Q rr Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/s, VR = 350V) /dt Peak Diode , diode reverse recovery. Eoff 4000 3000 Eon 2000 = 400V I = 77A D T = 125°C J L , APT77N60JC3 APT77N60JC3 0.035 600V 77A Super Junction MOSFET S S C OLMOS O 27 2 T- D , Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) V/ns Amps IAR Repetitive Avalanche ... Microsemi
Original
datasheet

5 pages,
171.98 Kb

transistors mj 1504 APT77N60JC3 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
boost type, using low voltage discrete components, power MOS and freewheeling diode. Considering the max. operating input voltage of the L4970A/77A of 50V, the typ. value of the out - put voltage boost di - ode is STPS20100CT STPS20100CT (Schottky diode 100V re - verse voltage breakdown). The bulk capacitor connected in se - ries to the power MOS drain and a second one in series to the anode of the boost diode
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4044-v3.htm
STMicroelectronics 25/05/2000 15.37 Kb HTM 4044-v3.htm
voltage discrete components, power MOS and freewheeling diode. Considering the max. operating input voltage of the L4970A/77A of 50V, the typ. value of the out - put voltage of the PFC stage has been fixed ,06 typ 0.085 Ohm max. at Tj = 255C) and the chosen boost di - ode is STPS20100CT STPS20100CT (Schottky diode 100V series to the anode of the boost diode. Fig.2 shows the schematic diagram of the PFC. stage. DC-DC
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4044.htm
STMicroelectronics 20/10/2000 16.07 Kb HTM 4044.htm
voltage discrete components, power MOS and freewheeling diode. Considering the max. operating input voltage of the L4970A/77A of 50V, the typ. value of the out - put voltage of the PFC stage has been fixed ,06 typ 0.085 Ohm max. at Tj = 255C) and the chosen boost di - ode is STPS20100CT STPS20100CT (Schottky diode 100V series to the anode of the boost diode. Fig.2 shows the schematic diagram of the PFC. stage. DC-DC
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4044-v2.htm
STMicroelectronics 14/06/1999 13.53 Kb HTM 4044-v2.htm
voltage discrete components, power MOS and freewheeling diode. Considering the max. operating input voltage of the L4970A/77A of 50V, the typ. value of the out - put voltage of the PFC stage has been fixed ,06 typ 0.085 Ohm max. at Tj = 255C) and the chosen boost di - ode is STPS20100CT STPS20100CT (Schottky diode 100V series to the anode of the boost diode. Fig.2 shows the schematic diagram of the PFC. stage. DC-DC
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4044-v1.htm
STMicroelectronics 02/04/1999 13.56 Kb HTM 4044-v1.htm
(L4970A/77A/75A). Figure 7: Switching frequency vs. R osc (L4972A/74A L4972A/74A). APPLICATION NOTE 4/12 Figure 8 bootstrap capacitance, charged via diode D1 at 12V, is needed to provide the correct gate drive to the power
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1738.htm
STMicroelectronics 20/10/2000 21.44 Kb HTM 1738.htm
(L4970A/77A/75A). Figure 7: Switching frequency vs. R osc (L4972A/74A L4972A/74A). APPLICATION NOTE 4/12 Figure 8 performances at high switching frequency. An external bootstrap capacitance, charged via diode D1 at 12V, is
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1738-v2.htm
STMicroelectronics 14/06/1999 18.77 Kb HTM 1738-v2.htm
No abstract text available
/download/19087458-743581ZC/70716.pl
SGS-Thomson 07/08/1995 104.87 Kb PL 70716.pl
(L4970A/77A/75A). Figure 7: Switching frequency vs. R osc (L4972A/74A L4972A/74A). APPLICATION NOTE 4/12 Figure 8 performances at high switching frequency. An external bootstrap capacitance, charged via diode D1 at 12V, is
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1738-v1.htm
STMicroelectronics 02/04/1999 18.81 Kb HTM 1738-v1.htm
(L4970A/77A/75A). Figure 7: Switching frequency vs. R osc (L4972A/74A L4972A/74A). APPLICATION NOTE 4/12 at high switching frequency. An external bootstrap capacitance, charged via diode D1 at 12V, is
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1738-v3.htm
STMicroelectronics 25/05/2000 20.66 Kb HTM 1738-v3.htm
No abstract text available
/download/46739644-743582ZC/70716-v1.pl
SGS-Thomson 12/05/1995 104.87 Kb PL 70716-v1.pl