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Part : AD677AD Supplier : Analog Devices Manufacturer : Avnet Stock : - Best Price : €77.5840 Price Each : €80.8167
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Part : AD677AD Supplier : Analog Devices Manufacturer : Newark element14 Stock : - Best Price : $84.36 Price Each : $84.36
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Part : AD677AD Supplier : Analog Devices Manufacturer : Rochester Electronics Stock : 258 Best Price : $93.93 Price Each : $115.60
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Part : TL3577-ADJIKTTR Supplier : Texas Instruments Manufacturer : Rochester Electronics Stock : 17,449 Best Price : $4.62 Price Each : $5.68
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Part : 74ABT377AD Supplier : NXP Semiconductors Manufacturer : America II Electronics Stock : 4,000 Best Price : - Price Each : -
Part : 74ABT377AD Supplier : Philips Semiconductors Manufacturer : America II Electronics Stock : 27,172 Best Price : - Price Each : -
Part : SN74ABT377ADW Supplier : Texas Instruments Manufacturer : Bristol Electronics Stock : 99 Best Price : $0.4219 Price Each : $1.1250
Part : SN74ABT377ADW Supplier : Texas Instruments Manufacturer : RS Components Stock : 75 Best Price : £0.4640 Price Each : £0.6140
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Part : 8D521M77AD Supplier : SOURIAU Manufacturer : PEI Genesis Stock : 5 Best Price : $75.7200 Price Each : $75.7200
Part : 8D521W77AD Supplier : SOURIAU Manufacturer : PEI Genesis Stock : 12 Best Price : $67.1700 Price Each : $67.1700
Part : AD677AD Supplier : Analog Devices Manufacturer : Richardson RFPD Stock : - Best Price : $80.43 Price Each : $87.33
Part : AD677AD Supplier : Analog Devices Manufacturer : Chip1Stop Stock : 4 Best Price : $89.2000 Price Each : $89.2000
Part : SN74ABT377ADW Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 800 Best Price : $0.3490 Price Each : $0.4450
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77A DIODE

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MIN VDD = 333V, VGS = 15V ID = 77A, RG = 5 uJ 3830 SOURCE-DRAIN DIODE RATINGS AND , Peak Diode Recovery dt UNIT Amps (Body Diode) 308 (VGS = 0V, IS = -77A) 1.3 Volts , APT50M60L2VFR 500V 77A 0.060 POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new , Faster Switching · FAST RECOVERY BODY DIODE D G · Lower Leakage S MAXIMUM RATINGS Symbol , ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 250V Turn-off Advanced Power Technology
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APT60DF60 diode 77a TJ125
Abstract: -77A, dl S/dt = 100A/us, VR = 350V) 46 uC dv/ Peak Diode Recovery dt dv/ 231 (Body Diode) 1 (VGS = 0V, IS = -77A) dt 1.2 Amps Volts 6 V/ns MAX UNIT 5 , diode reverse recovery. 10000 8000 6000 4000 Eon 2000 1000 0 10 = 400V = 77A J , APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , (VDS = 480V, ID = 77A, TJ = 125°C) 50 V/ns Amps IAR Repetitive Avalanche Current 7 Microsemi
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APT30DF60
Abstract: -227 Package · FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050 S Power MOS 7 is a new , · Lower Gate Charge, Qg 77A D G S All Ratings: TC = 25°C unless otherwise specified , ) Turn-on Delay Time tr 3 VDD = 275V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 15V td(off) VDD = 275V Turn-off Delay Time tf ID = 77A @ 25°C Fall Time Turn-on Switching Energy Eoff INDUCTIVE SWITCHING @ 25°C Turn-off Switching Energy 6 Eon Eoff 1230 ID = 77A Advanced Power Technology
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APT55M50JFLL
Abstract: VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -77A, dl S /dt = 100A/us, VR , APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D , " from Case for 10 Sec. 300 Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) 50 , Delay Time tr ID = 77A @ 25°C tf 110 Turn-on Switching Energy Eoff Turn-off , Switching Energy 6 165 8 RG = 0.9 Eon ns 12 1670 VDD = 400V, VGS = 15V ID = 77A Advanced Power Technology
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Abstract: UNIT Amps Volts ns C 77 231 1 861 46 6 1.2 (Body Diode) (VGS = 0V, IS = - 77A) Reverse , 8000 6000 4000 2000 I = 77A D T = 125°C L = 100H EON includes diode reverse recovery. J T = , APT77N60JC3 600V 77A Super Junction MOSFET · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra , : 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 400V, ID = 77A, TJ = 125°C) Avalanche , = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 10V VDD = Microsemi
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transistors mj 1504 mj 1504 ce 77a E145592
Abstract: APT50M60L2VFR 500V 0.060â"¦ 77A POWER MOS V® FREDFET TO-264 Max Power MOS V® is a , Energy Rated â'¢ Faster Switching â'¢ FAST RECOVERY BODY DIODE D G â'¢ Lower Leakage S , Qgd Gate-Drain ("Miller") Charge td(on) ID = 77A @ 25°C Turn-on Delay Time tr , 77A @ 25°C Fall Time Turn-on Switching Energy Eoff INDUCTIVE SWITCHING @ 25°C Turn-off Switching Energy 6 Turn-on Switching Energy Eoff ID = 77A, RG = 5â"¦ 3450 INDUCTIVE Advanced Power Technology
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Abstract: Recovery Charge (IS = -77A, dl S/dt = 100A/us, VR = 350V) Peak Diode Recovery dv/ dt 5 V/ns THERMAL , °C J D J = 77A T = 125°C 6000 5000 4000 3000 2000 1000 L = 100uH EON includes diode , APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S , Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) Repetitive Avalanche , Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 10V Advanced Power Technology
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7N60JC3
Abstract: p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed , Conditions VGS = 0V, ID = 250uA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 7.7A e VGS(th , 25uA S VDS = 25V, ID = 7.7A nC VGS = 10V Total Gate Charge ­­­ 8.9 13 Qgs1 , 0.77 ­­­ Qgd Gate-to-Drain Charge ­­­ 3.5 ­­­ ID = 7.7A Qgodr ­­­ 3.0 , Inductance ­­­ 7.5 ­­­ VDS = 44V VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5 VGS International Rectifier
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IRFI4024H-117P digital audio mosfet 100w audio amplifier 77A MARKING
Abstract: =-250uA VGS=-10V , ID=-7.7A -1 c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Min c VDS=-15V,ID=-7.7A, VGS=-10V nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND , (ON) (m ) Max Rugged and reliable. 30 @ VGS=-10V -30V Suface Mount Package. -7.7A 48 @ , uA -1.8 24 -3 30 V m ohm VGS=-4.5V , ID=-6.2A 36 48 m ohm VDS=-15V , ID=-7.7A , =-10V RGEN=6 ohm 15 28 98 28 ns ns ns ns VDS=-15V,ID=-7.7A,VGS=-10V 22 nC VDS=-15V,ID SamHop Microelectronics
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STM4637 015X45
Abstract: Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = - 77A) 1 t rr Q rr Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/s, VR = 350V) /dt Peak Diode , diode reverse recovery. Eoff 4000 3000 Eon 2000 = 400V I = 77A D T = 125°C J L , APT77N60JC3 0.035 600V 77A Super Junction MOSFET S S C OLMOS O 27 2 T- D , Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) V/ns Amps IAR Repetitive Avalanche Microsemi
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Abstract: SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 77A, RG = 5 3100 SOURCE-DRAIN DIODE RATINGS AND , (Body Diode) 3 (VGS = 0V, IS = -77A) 1 UNIT Amps 1.2 Volts 15 V/ns /dt Peak Diode Recovery /dt t rr Reverse Recovery Time (IS = -77A, di/dt = 100A/s) Tj = 25 , APT77N60BC6 APT77N60SC6 600V C OLMOS O 77A 0.041 Super Junction MOSFET Power , INDUCTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 25°C RG = 5.0 5 UNIT 290 VGS = 10V VDD = Microsemi
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APT77N60B
Abstract: TYP dv 1 3 dv 77 (Body Diode) 231 (VGS = 0V, IS = -77A) 1 UNIT Amps , DD I = 77A Eoff T = 125°C J L = 100μH 5000 EON includes diode reverse recovery , APT77N60BC6 APT77N60SC6 600V C OLMOS O 77A 0.041 Super Junction MOSFET Power , 144 18 INDUCTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 25°C RG = 5.0 27 110 165 8 INDUCTIVE SWITCHING @ 25° C VDD = 400V, VGS = 15V ID = 77A, RG = 5 5 UNIT 290 Microsemi
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Abstract: integral reverse 1.3 p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e Conditions MOSFET , °C, ID = 1mA mâ"¦ VGS = 10V, ID = 7.7A e VGS(th) Gate Threshold Voltage 2.0 â'"â'"â'" 4.0 , VGS = -20V S VDS = 25V, ID = 7.7A nC VGS = 10V â'"â'"â'" Qgs2 VDS = 55V, VGS = 0V , Gate-to-Drain Charge â'"â'"â'" 3.5 â'"â'"â'" ID = 7.7A Qgodr â'"â'"â'" 3.0 â'"â'"â , Inductance â'"â'"â'" 7.5 â'"â'"â'" â"¦ VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5â International Rectifier
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Abstract: p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed , Conditions VGS = 0V, ID = 250uA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 7.7A e VGS(th , 25uA S VDS = 25V, ID = 7.7A nC VGS = 10V Total Gate Charge ­­­ 8.9 13 Qgs1 , 0.77 ­­­ Qgd Gate-to-Drain Charge ­­­ 3.5 ­­­ ID = 7.7A Qgodr ­­­ 3.0 , Inductance ­­­ 7.5 ­­­ VDS = 44V VDD = 28V, VGS = 10V ns e ID = 7.7A RG = 2.5 VGS International Rectifier
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audio mosfet class d amplifier
Abstract: Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max Units 30 V 2 VGS=4.5V, I D=4A VDS=5V, ID=7.7A Forward Transconductance IS=1A Diode Forward Voltage Maximum Body-Diode Continuous , other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related , p-channel -30V VDS (V) = 30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m (VGS Alpha & Omega Semiconductor
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AOP610 AOP610L 0E-06
Abstract: Diode) Pulsed Source Current 1 Diode Forward Voltage Reverse Recovery Time (IS = -77A, dl S/dt = 100A/us) Peak Diode Recovery dv/ 4 dt Reverse Recovery Charge (IS = -77A, dlS/dt = 100A/us) L A , APT77N60JC3 600V 77A 0.035 Super Junction MOSFET C O OLMOS Power Semiconductors S G D S , 600 .030 1.0 0.035 50 500 ±200 2.1 3 3.9 (VGS = 10V, ID = 77A) Ohms uA nA Volts Zero Gate , 3 AP77N60JC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 380V ID = 77A @ 25 Advanced Power Technology
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MIL-STD-750
Abstract: D=77A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC , Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot , ID =77A, VDD =25V, RGS =25 kV/us IS =77A, VDS =44V, di/dt=200A/us, Tjmax=175°C TC , Turn-on delay time td(on) V DD=30V, V GS=10V, - 14 20 Rise time tr ID=77A, - , 39 V DD=44V, I D=77A - 9 12 - 18 28 - 45 60 V(plateau) V DD=44V, I D=77A Infineon Technologies
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SPP77N06S2-12 SPB77N06S2-12 BSPP77N06S2-12 2n0612 smd diode 77a S6030 Q67060-S6029 2N0612 Q67060-S6030
Abstract: VGS = 0V 2065 VDD = 333V, VGS = 15V ID = 77A, RG = 5â"¦ 3830 SOURCE-DRAIN DIODE RATINGS , 30 50 = 333V = 77A T = 125°C J 20,000 L = 100ÂuH EON includes Eoff diode , APT50M60L2VR 0.060â"¦ 500V 77A POWER MOS V® MOSFET TO-264 Max Power MOS V® is a new , Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 77A @ 25°C td(off) tf 25 VDD = 250V ID = 77A @ 25°C Turn-off Delay Time Eon Turn-on Advanced Power Technology
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Abstract: =1.4, RGEN=3 40.5 ns 10 ns IF=7.7A, dI/dt=100A/us 18.8 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/us 8.1 ns nC Body Diode Reverse Recovery Time A: The value of R , 10 VGS=4.5V, ID=7.7A Units uA uA V 0.73 1 V A 11 14 18 16 21 , On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS 25 VDS=5V, ID=7.7A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Alpha & Omega Semiconductor
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AON5810 AON5810L 0E-04 0E-05
Abstract: =4.5V, ID=5A 23.4 gFS Forward Transconductance VDS=5V, ID=7.7A 20 VSD Diode Forward , =15V, RL=1.95â"¦, RGEN=3â"¦ 2.7 ns 14.9 ns IF=7.7A, dI/dt=100A/Âus 10.5 Body Diode , ) = 30V ID = 7.7A (VGS = 10V) RDS(ON) < 22mâ"¦ (VGS = 10V) RDS(ON) < 32mâ"¦ (VGS = 4.5V) 100% UIS , mâ"¦ mâ"¦ S 1 V 2.4 A 448 pF 67 pF 41 pF VGS=10V, VDS=15V, ID=7.7A , Rg ÂuA 100 VGS=10V, ID=7.7A Crss Units 11 nC 3.5 nC 1.3 nC Qgd Alpha & Omega Semiconductor
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AO4842
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