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40-4689-00 Judco Manufacturing Inc SWITCH PB SPST N/C MOM 14VDC 5A
40-4675-00 Judco Manufacturing Inc SWITCH PB SPST N/C MOM 14VDC 10A
40-4684-00 Judco Manufacturing Inc SWITCH PB SPST ON/OFF 125VAC 6A
4046PA51H01800 LAIRD PLC GASKET FABRIC/FOAM 3X3MM SQUARE
40-4685-00 Judco Manufacturing Inc SWITCH PB SPST ON/OFF 14VDC 10A
40-4692-00 Judco Manufacturing Inc SWITCH PB SPST N/O MOM 14VDC 2A

4046 RAM

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BLOCK DIAGRAM DESCRIPTION: The IDT7MP4047/4046 is a 512K/256K x 16 CMOS static RAM module constructed , Copyrighted By Its Respective Manufacturer IDT7MP4047/4046 (512K/256K x 16) CMOS STATIC RAM MODULE , Manufacturer IDT7MP4047/4046 (512K/256K X 16) CMOS STATIC RAM MODULE COMMERCIAL TEMPERATURE RANGE AC TEST , Its Respective Manufacturer IDT7MP4047/4046 (512K/256K x 16) CMOS STATIC RAM MODULE COMMERCIAL , Integrated Device Technology, Inc. 512K/256K x 16 CMOS STATIC RAM MODULE 1DT7MP4047 -
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CI 4046 cmos 4046 applications of 4046 H 7057 IDT7MP4046 IDT7MP4047/4046 7MP4046
Abstract: : The IDT7MP4047/4046 is a 512K/256K x 16 CMOS static RAM module constructed on a multilayer epoxy , 2003 IDT7MP4047/4046 (512K/256K X 16) CMOS STATIC RAM MODULE COMMERCIAL TEMPERATURE RANGE ABSOLUTE , CopyRight 2003 IDT7MP4047/4046 (512K/256K X 16) CMOS STATIC RAM MODULE COMMERCIAL TEMPERATURE RANGE AC TEST , ICminer.com Electronic-Library Service CopyRight 2003 IDT7MP4047/4046 (512K/256K X 16) CMOS STATIC RAM MODULE , /4046 (512K/256K x 16) CMOS STATIC RAM MODULE COMMERCIAL TEMPERATURE RANGE PACKAGE DIMENSIONS 7MP4046 -
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4046
Abstract: /4046 is a 512K /256K x 16 C M O S static RAM module constructed on a multilayer epoxy laminate (FR 4 , parameter is guaranteed by design, but not tested. IDT7MP4047/4046 (512K/256K x 16) CMOS STATIC RAM , . IDT7MP4047/4046 (512K/256K x 16) CMOS STATIC RAM MODULE COMMERCIAL TEMPERATURE RANGE PACKAGE DIMENSIONS , 512K/256K x 16 CMOS STATIC RAM MODULE In te g ra te d Device Technology, Inc. IDT7MP4047 IDT7MP4046 FEATURES: · · · High-speed 8/4 megabit (pin compatible) C M O S static RAM modules Fast access -
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7MP4047 ic 4046 notes with IC diagram ic 4046 ic 4047 notes with IC diagram P 2754
Abstract: MOS LSI TMS 4045 JL, 1024 WORD NL; TMS 4047 Jl. NL BY 4-BIT STATIC RAM NOVEMBER 1(77 ACCESS READ OR WRITE TIME CYCLE TIME (MAXI (MINI 160na 160 na 200 m 200 na 260 m 260 (11 300 m 300 m , 4046-16. TMS 4047 16 TMS 4046-20. TMS 4047-20 TMS 4046-26. TMS 4047-26 TMSäggSk TMS 4046-30 TMS 4046 , pull up resistors are required. The TMS 4046/4047 series is manufactured using Tl's reliable N-channel , power solely to the array is maintained. TMS 4046 16-PIN CERAMIC AND PLASTIC DUAL-IN-LINE PACKAOES -
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IC 4047 4045 RAM TMS 1024 4045 static ram 4046 sheet data sheet of IC 4047 20-PIN TMS4047J
Abstract: IDT7MP4047/4046 (S12K/256K CMOS STATIC RAM MODULE X 16) COMMERCIAL TEMPERATURE RANGE PIN , ow er G ro u n d Vcc GND Vcc GND 7.22 2 IDT7MP4047/4046 (512K/256K CMOS STATIC RAM , tested 7.22 3 IDT7MP4047/4046 (512K/2S6K x 16) CMOS STATIC RAM MODULE COMMERCIAL TEMPERATURE , . 7.22 6 IDT7MP4047/4046 (512K/256K x 16) CMOS STATIC RAM MODULE COMMERCIAL TEMPERATURE RANGE , 512K/256K x 16 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. IDT7MP4047 IDT7MP4046 -
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Abstract: V30 V31 V32 2.5-2.9 2.8-3.2 3.1-3.5 3.4-3.8 3.7-4.1 4.0-4.6 4.4-5.0 4.8-5.4 5.2-6.0 5.8-6.6 6.4-7.2 , 20.8-23.3 22.8-25.6 25.1-28.9 28-32 31-35 34-38 37-41 40-46 44-50 48-54 ! ' ZZ T O hm s 100 100 95 95 90 90 , d w ith pulses tp = 5 ms. The pa ram eters are valid fo r both diodes in one case. A v 7 and A ^ Z T -
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Z23-C5V1 Z23-C 223-C D223-C11 DZ23-C DZ23-C51
Abstract: D V 4046 D V 4048 D V 4051 D V 4066 D V 4520 D V 4531 D V 4533 D V 4585 D «HcK/itoMatomee HTIH , 4035 D V 4042 D V 4044 D V 4046 D V 4048 D V 4051 D V 4066 D V 4520 D V 4531 D V 4538 D V 4585 D CD , 4046 BCN CD 4048 BCN CD 4051 BCN CD 4066 BCN CD 4520 BCN CD 4538 BCN - F 4001 BPC F 4007 UBC F , BPC F 4030 BPC F 4034 BPC F 4035 BPC F 4042 BPC F 4044 BPC F 4046 BPC F 4051 BPC F 4066 BPC F 4520 BPC , CD 4027 BE CD 4028 BE CD 4029 BE CD 4030 BE CD 4034 BE CD 4035 BE CD 4042 BE CD 4044 BE CD 4046 BE CD -
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ub 8820 MC 4011 BCP ub 8840 elektronik DDR ic cd 4017 4028 BE B03M0 R-5023
Abstract: . Revised MSP50C6xx Pad Numbers SIGNAL /8 D port I/0 RAM 640 x 17 bit 0x0000 to (data) 0x027F , ] name src MULR Clock, clk {adrs} Word, w With RPT, clk Table 4­0­46 Table 4­0­46 Texas Instruments
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SPSU014 MSP50C6xx MSP50C604 C604 P614 MSP50C6
Abstract: SOLUTIONS WITH THE IDT8216X1 AND IDT821054A AN-408 COEFFICIENTS IN DSP RAM 600 The system target gain , Coefficients in the DSP Ram From low address to high address: IMF Ram: ECF Ram: GIS + Dual Tone Ram: FRX + GTX Ram: FRR + GRX Ram: C6 42 00 70 38 FD F4 00 00 01 6B A4 08 37 13 04 15 , -408 COEFFICIENTS IN DSP RAM 600 The system target gain from tip / ring to digital port: 0 dB The system target gain from digital port to tip / ring: -3.5 dB Coefficients in the DSP Ram From low address to high Integrated Device Technology
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relay 4098 CI 4026 4026 block diagram for digital clock cs 2648 A55 DIODE RELAY 4088 IDT8216
Abstract: modes â'" MCU mode â'" PROM mode (HD4074678) 2 8,192-word x 10-bit ROM 512-digit x 4-bit RAM 48 , -bit Stack pointer 512 x 4-bit RAM ROM Instruction decoder /< - V 7 Y R8 W{2) Program , the P instruction. P ro g ram a rea ($ 0 0 0 0 -$ lF F F ): gram code. $0000 0 > Vector , ory M ap The M CU contains a 512-digit x 4-bit RAM area for data and stack areas. In addition, interrupt con­ trol bits, special function registers, and a display data RAM area are mapped onto the -
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HD404678 CS400 FP-64 HD404678H FP-64A HD4074678H
Abstract: of static CMOS RAM and Nonvolatile Electric Erasable Programmable Read Only Memory (EJ PROM) as a , signal, RECALL signal and instructions sent from the processor transfer data between RAM and E^PROM. Non Volatile data is retained in the E2 PROM while data in the RAM can be accessed and updated. There is no , Data in to RAM R EAD (Diagram 2) 1A A A A 1 1X Read Data fro m R AM Address A A A A X = D o n 't Care A = Address Bit â  DATA OPERATIONS Diagram 2. RAM Read * B it 8 o f Read -
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S2444 S-2444R S2444R S2444R01 S2444R10
Abstract: their ROM and RAM capacity: CCU2030 - 6.5 K Byte ROM and 120 Byte RAM CCU2050 - 8 K Byte ROM and 256 Byte RAM CCU2070 - 16 K Byte ROM and 256 Byte RAM These types are the unprogrammed versions and are , - 1344 Bytes internal RAM with stand-by - 32 kByte ROM (CCU3001 only) - 8 level, very fast , , especially for use in analog television sets, but also suited for use in digital sets. A 16 kByte RAM is , display. Features: - CPU with 8 MHz clock - 1344 Bytes internal RAM - 16 kByte ROM - watchdog - 5 -
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ITT ZY150 melf ZENER diode COLOR CODE MOTEC DIGIT2000 E-28002 E-08037 S-17126 CH-8027 CH-6330
Abstract: KM6164000B Family 256KX16 bit Low Power CMOS Static RAM FEATURES · · . · · . Process Technology - 0.4nm CMOS Organization: 256Kx16 Power Supply Voltage : Single 5V±10% Low Data Retention Voltage : 2V(Min) Three state output and T T l Compatible Package Type : 44-TSOP2-40QF/R CMOS SRAM GENERAL DESCRIPTION The KM616V4000B family is fabricated by SAMSUNG'S advanced CMOS process technology , -7L CMOS SRAM industriai Temperature Products (-40-46*0) PartMame KM6164000BLT1-7L KM6164000BLTI -
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KM6164000BL-L KM6164000BLI-L 44-TSOP2-F/R
Abstract: 3700 722 1312 2405 4046 Recognition (6 pixels on target) An observer can distinguish an , aluminum casing and a germanium window 128 MB RAM, 128 MB Flash Power over Ethernet IEEE 802.3af Class 3 Axis Communications
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Q1921/-E Q1921 Q1921-E YP3040 T8412
Abstract: , et biw» or mit ram er 1Mb DUMB ama er «c DOTTY TD mOU IT «AS S04T. WTHOUT MVnDi AUTHORIZATION or , - 4250 CONTACT GENDER - 5 - SOCKET CONTACT TICC CODE 4250 _ 127 MICRON HOLE (STYLE 2) 4046 _ 127 , FERRULE SIZE 4 3 PROJECTION C0NESY3, MC. B CONTAMES M UE. -
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D38999 MIL-S-901 FOTP-34 0BW78 OBW78 3 pin DDK Connector MIL-PRF-29504 J-TECH M29504/4 MIL-C-38999 JT29504/
Abstract: DMADMA 78K0R/Lx3 D/A ANO0 12 125sDMA D/A RAM D/A1 D/A2 , 8MHz LVI P110/ANO0D/A 2.7VVDD CPU8MHz X1/XT1 RAM 2.0V D/A 12 D/AVREFOUT , CPU 8MHz HALT 4 X1/XT1 RAM INTDMA0 D/A VREFOUT 2.0V , 4-4-1 . DMA SFR0DSA0 FFFFEHPMC 2DMA RAM0DRA0 DMAnRAM16 RAM RAM16 DMA81 DMADRA0 162 , FFFB7H FFFB6H 1. 15-100 2. RAM SFRRAM U20030JJ1V0AN 21 4 4DMA0DMC0 DMC0DMA0 NEC
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TE041 csc 2323 DW 3432 hy 3842 nec 2035 728 82459 78K0R/L 78K0R/LF3 78K0R/LG3 78K0R/LH3 U20030JJ1V0AN001 M8E0909J
Abstract: C945C P a ram eters and T e st C on d ition s Power at 1 dB Gain Compression (opt tuning); VC E = 2.7 V , 0.57 0.57 0.56 0.54 0.50 -40.46 -29.90 -25.40 -24.56 -21.23 -19.69 -18.79 -17.21 -15.22 -12.48 -10.27 -
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AT-32063 SC-70 AT-32063-TR1 AT-32063-BLK
Abstract: PFI12 > VBATT) and can source continuous currents of up to 250mA. VOUT can be used to drive CMOS RAM. The BATT , 1.6sec Immediately After Reset 4046 Clocks 2.4s ×C 47pF 1.6sec 1.6sec Reset Timeout Period 2048 Clocks Micrel Semiconductor
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MIC691/693 MIC705/706/707/708 MIC705 MIC706 MIC707 MIC708
Abstract: RAM, needed to implement a high performance 10BASE-T (twisted pair) node. For 10BASE5 (thick coax , functions are incorporated in the SMC91C94, as well as a 4608 byte packet RAM and serial EEPROMbased setup , SMC91C94 offers: High integration: Single chip adapter including: Packet RAM ISA bus interface PCMCIA , 40-46 47 Address A12-18 A19/nCE1 1 1 w ith pullup 54 52 Address Enable AEN/nREG -
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91C92 10BASE2 10BASE-F C91C94 91C94 16BIT D8-15
Abstract: , microprocessor reset, backup battery switchover, CMOS RAM write protection, and power failure warning. The power , RESET WDI RESET I/O Line VBATT PFO VOUT NMI CMOS RAM VCC Micrel, Inc. · 1849 Fortune , source continuous currents of up to 250mA. VOUT can be used to drive CMOS RAM. The BATT ON Pin can be , Capacitor Low Floating or High 992 Clocks 600ms ×C 47pF 100ms 1.6sec Immediately After Reset 4046 Clocks Micrel Semiconductor
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MIC691 MIC693 MIC691NC MIC691MC MIC693NC MIC693MC
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