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Part : 2SA1213-Y(TE12L,ZC Supplier : Toshiba Manufacturer : Avnet Stock : 2,000 Best Price : $0.0629 Price Each : $0.0869
Part : 2SA1213-Y-TP Supplier : Micro Commercial Components Manufacturer : Newark element14 Stock : - Best Price : $0.1310 Price Each : $0.1580
Part : 2SA1213-Y(C,F) Supplier : Toshiba Manufacturer : RS Components Stock : 130 Best Price : £0.1090 Price Each : £0.1950
Part : 2SA1213-Y Supplier : Toshiba Manufacturer : Chip One Exchange Stock : 388 Best Price : - Price Each : -
Part : 2SA1213-Y(TE12L,CF) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 10,200 Best Price : $1.43 Price Each : $1.75
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2SA1213-Y Datasheet

Part Manufacturer Description PDF Type
2SA1213Y Micro Commercial Components TRANS GP BJT PNP 50V 2A 3SOT-89 Original
2SA1213Y Toshiba TRANS GP BJT PNP 50V 2A 3(2-5K1A) Original
2SA1213-Y Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal Original
2SA1213-YCF Toshiba 2SA1213 - Trans GP BJT PNP 50V 2A 4-Pin(3+Tab) PW-Mini Original
2SA1213YTE12L Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original
2SA1213-Y(TE12L,CF Toshiba 2SA1213 - Trans GP BJT PNP 50V 2A 4-Pin(3+Tab) PW-Mini T/R Original
2SA1213YTE12R Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original

2SA1213-Y

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * * LO W SATU R A TIO N VOLTAGE FAST SW ITCHING CO M PLEM ENTARY TYPE - 2SC2873 PART M AR KIN G DETAILS 2SA1213 -N Y 2SA1213 2SA1213Y 2SA1213Y - NO ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Tem perature Range SYMBOL V CBO V CEO ^E BO 'cm VALUE -50 -50 -5 -6 -2 1 « B UNIT -
OCR Scan
2SC1213Y 2SC1213-Y 2sc1213 transistor KIN 100MH
Abstract: Transistor : Toshiba Corporation 2SA1213Y. Base resistance (Rb) : 0.68 kO Base capacitor (Cb) : 2200 pF , : Matsushita Electronics Corporation TE (16 V, 22 |iF tantalum type). : Toshiba Corporation 2SA1213Y. : 0.68 k , tantalum type). Toshiba Corporation 2SA1213Y. 0.68 kQ 2200 pF (Ceramic type) *1. Vout(S) Specified output , 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the output current by , . 2SA1213-Y Figure 7 The Revalue is given by the following equation: R _ Vin-0.7 _ 0.4 lb |IEXTL| Find -
OCR Scan
S-8520 S-8521 TOSHIBA 2SA1213Y S8520E50MC E50M MA737 S-8520B36MC-ARV-T2 c50mcb S-8520/8521 S-8520F50MC S-8521F50MC S-8521D30MC
Abstract: MCC Micro Commercial Components 2SA1213 TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating Collector-Emitter Micro Commercial Components
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pnp hfe 120-240
Abstract: 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb , (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k , Bipolar PNP type Figure 11 shows a sample circuit diagram using Toshiba Corporation 2SA1213-Y for the , 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the following equation Seiko Instruments
Original
toyota IC regulator built S-8521B20MC-ATFT2G IRF7606 seiko 320 240 S-8540 mark A E sot-89-3
Abstract: (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base , : Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The , ., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 , 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the output current by , . Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the Seiko Instruments
Original
Abstract: MCC Micro Commercial Components 2SA1213-O TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-Y Features · x x x x · · · Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Halogen free Micro Commercial Components
Original
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-Y Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) PNP Silicon Epitaxial Transistors Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating Micro Commercial Components
Original
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-Y Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) PNP Silicon Epitaxial Transistors Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating Micro Commercial Components
Original
Abstract: VO CO GND S-817A11B VSS VIN VDD Cin PNP 2SA1213Y VIN CO Ta Seiko Instruments
Original
S-817 s817a11b 817a 3S81 817A1 S-817A S-817ACMOS S-817A11B3 LS-817A11B
Abstract: type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68 k Base capacitor (Cb) : 2200 pF , Capacitor : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. , Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb , Bipolar PNP type Figure 7 shows a sample circuit diagram using Toshiba 2SA1213-Y for the bipolar , determined by the hFE-value and the Rb-value of that bipolar transistor. 2SA1213-Y VIN Rb Cb EXT Seiko Instruments
Original
S8521 MP005-A
Abstract: MCC Micro Commercial Components 2SA1213-O TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-Y Features · x x x x · · Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 PNP Silicon Micro Commercial Components
Original
PNP marking NY sot-89
Abstract: *1. PNP 2SA1213-Y (CL) 10 F 6 Rev.6.0_00 CMOS S-816 1. 2. A A + - , EXT-GND PNP PNP RS 0.5 2SA1213Y R4 2 k Tr1 EXT OUT VOUT VIN + CIN - 10 F Seiko Instruments
Original
816a4 816a6 S-816A33AMC-BAIT2x ACL10 S-816A37AMC S-816A MCSOT-23-5 MP005-A-C-SD MP005-A-P-SD MP005-A-R-SD S-816A25AMC-BAAT2
Abstract: Electric Industrial Co., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base , Electric Industrial Co., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base , Electric Industrial Co., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base , using Toshiba Corporation 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for , value of that bipolar transistor. Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure Seiko Instruments
Original
pin diagram ic 7420 S-8521F48mc-bqh-t2 TM6201
Abstract: MCC Micro Commercial Components 2SA1213 TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating Micro Commercial Components
Original
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors C Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol VCEO VCBO Micro Commercial Components
Original
Abstract: (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68 k Base , Capacitor : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. , Capacitor : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. , sample circuit diagram using Toshiba 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for , Rb-value of that bipolar transistor. 2SA1213-Y VIN Rb Cb EXT VIN Figure 7 The Rb-value Seiko Instruments
Original
Abstract: Capacitor : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. , Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68 k Base , (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68K Base , shows a sample circuit diagram using Toshiba 2SA1213-Y for the bipolar transistor (PNP). The driving , and the Rb-value of that bipolar transistor. 2SA1213-Y VIN Rb Cb EXT VIN Figure 7 Seiko Instruments
Original
Abstract: 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , using Toshiba Corporation 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for , value of that bipolar transistor. Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure Seiko Instruments
Original
Abstract: : Matsushita Electronics Corporation TE (16V, 22 mF tantalum type). Transistor : Toshiba 2SA1213Y. Base , : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68KW Base capacitor (Cb) : 2200 pF (Ceramic type) The , using Toshiba 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the , bipolar transistor. 2SA1213-Y VIN Rb VIN Cb EXT Figure 7 The Rb-value is given by the Seiko Instruments
Original
8521A s8520b25mcarkt2 S-8521A25MC-AXK-T2 MATSUA S-8520A33MC-AVS-T2 S-8520A30MC-AVP-T2 S-8521B30MC S-8520D30MC S-8520B50MC S-8521B50MC S-8520D50MC S-8521D50MC
Abstract: (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base , : Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The , ., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 , 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the output current by , . Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the Seiko Instruments
Original
Abstract: 2SA1213Y Base resistance (Rb): 0.68 kâ"¦ Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , , 22ÂuF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 kâ"¦ Base , ., Ltd. TE (16 V, 22ÂuF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb , Bipolar PNP type Figure 11 shows a sample circuit diagram using Toshiba Corporation 2SA1213-Y for the , 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the following equation Seiko Instruments
Original
Abstract: (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base , Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , ., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 , 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the output current by , . Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the Seiko Instruments
Original
Abstract: , 22ÂuF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 kâ"¦ Base , ., Ltd. TE (16 V, 22ÂuF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb , ) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 kâ"¦ Base capacitor (Cb): 2200 pF , Bipolar PNP type Figure 11 shows a sample circuit diagram using Toshiba Corporation 2SA1213-Y for the , 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the following equation Seiko Instruments
Original
S-8520E15MC-BJAT2G
Abstract: 2SA1213Y. Base resistance (Rb) : 0.68 k Base capacitor (Cb) : 2200 pF (Ceramic type) The power-off pin , : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base , (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68K Base , Toshiba 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the output , transistor. 2SA1213-Y VIN Rb VIN Cb EXT Figure 7 The Rb-value is given by the following -
Original
S-8520F50MC-BOJ-T2 AXS SOT S-8520E33MC-BJS-T2 S-8520E30MC-BJP-T2 S-8521F50MC-BQJ-T2 s8520e
Abstract: 2SA1213Y. Base resistance (Rb) : 0.68 k Base capacitor (Cb) : 2200 pF (Ceramic type) The power-off pin , Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba Corporation 2SA1213Y. Base , Transistor : Toshiba Corporation 2SA1213Y. Base resistance (Rb) : 0.68 k Base capacitor (Cb) : 2200 pF , using Toshiba 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the , bipolar transistor. 2SA1213-Y VIN Rb VIN Cb EXT Figure 7 The Rb-value is given by the Seiko Instruments
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8520-C S-8520A21MC-AVG-T2 S-8521F33MC-BPS-T2 pin diagram of ic 7410 S-8520A29MC-AVO-T2 S-8520A28MC-AVN-T2
Abstract: . The characteristics given above are those obtained when the IC is combined with a Toshiba 2SA1213-Y , external component. Rs 0.5W OUT 2SA1213Y R4 2kW EXT Tr.1 VOUT VIN VIN + - Seiko Instruments
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S-816A50AMC-BAZ-T2 S-816A40AMC-BAP-T2 S-816A37AMC-BAM-T2 S-816A33AMC-BAI-T2 S-816A30AMC-BAF-T2 S-816A25AMC-BAA-T2 F/20V 11S816001 11S814005
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