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2SA1213-Y Datasheet

Part Manufacturer Description PDF Type Ordering
2SA1213Y Micro Commercial Components TRANS GP BJT PNP 50V 2A 3SOT-89
ri

3 pages,
656.14 Kb

Original Buy
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2SA1213Y Toshiba TRANS GP BJT PNP 50V 2A 3(2-5K1A)
ri

5 pages,
163.38 Kb

Original Buy
datasheet frame
2SA1213-Y Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
ri

5 pages,
189.53 Kb

Original Buy
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2SA1213-Y(TE12L,CF Toshiba 2SA1213 - Trans GP BJT PNP 50V 2A 4-Pin(3+Tab) PW-Mini T/R
ri

5 pages,
189.53 Kb

Original Buy
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2SA1213-YCF Toshiba 2SA1213 - Trans GP BJT PNP 50V 2A 4-Pin(3+Tab) PW-Mini
ri

5 pages,
189.53 Kb

Original Buy
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2SA1213YTE12L Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
ri

5 pages,
189.53 Kb

Original Buy
datasheet frame
2SA1213YTE12R Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
ri

5 pages,
189.53 Kb

Original Buy
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2SA1213-Y

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * * LO W SATU R A TIO N VOLTAGE FAST SW ITCHING CO M PLEM ENTARY TYPE - 2SC2873 2SC2873 PART M AR KIN G DETAILS 2SA1213 2SA1213 -N Y 2SA1213 2SA1213 2SA1213Y 2SA1213Y - NO ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Tem perature Range SYMBOL V CBO V CEO ^E BO 'cm VALUE -50 -50 -5 -6 -2 1 « B UNIT ... OCR Scan
datasheet

1 pages,
63.24 Kb

transistor KIN 2SC2873 2sc1213 2SC1213-Y 2SA1213-Y 2SC1213Y 2SA1213Y 2SA1213 TEXT
datasheet frame
Abstract: Transistor : Toshiba Corporation 2SA1213Y. Base resistance (Rb) : 0.68 kO Base capacitor (Cb) : 2200 pF , : Matsushita Electronics Corporation TE (16 V, 22 |iF tantalum type). : Toshiba Corporation 2SA1213Y. : 0.68 k , tantalum type). Toshiba Corporation 2SA1213Y. 0.68 kQ 2200 pF (Ceramic type) *1. Vout(S) Specified output , 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the output current by , . 2SA1213-Y Figure 7 The Revalue is given by the following equation: R _ Vin-0.7 _ 0.4 lb |IEXTL| Find ... OCR Scan
datasheet

34 pages,
2022.31 Kb

C25M IRF7606 but100 equivalent S-8520 S-8520B18MC-ARD-T2 B30MC-ATP-T2 S-8520E33 S-8520F33MC-BNS-T2 S-8521 D50MC-BYJ-T2 c50mcb S-8520B36MC-ARV-T2 MA737 2SA1213Y S-8520/8521 S-8520/8521 E50M S-8520/8521 S-8520/8521 S8520E50MC S-8520/8521 S-8520/8521 TOSHIBA 2SA1213Y S-8520/8521 S-8520/8521 S-8520/8521 S-8520/8521 S-8520/8521 TEXT
datasheet frame
Abstract: MCC Micro Commercial Components 2SA1213 2SA1213 TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating Collector-Emitter ... Micro Commercial Components
Original
datasheet

3 pages,
240.96 Kb

pnp hfe 120-240 2SA1213 TEXT
datasheet frame
Abstract: 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb , (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k , Bipolar PNP type Figure 11 shows a sample circuit diagram using Toshiba Corporation 2SA1213-Y for the , 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the following equation ... Seiko Instruments
Original
datasheet

43 pages,
491.21 Kb

S-8520E33MC-BJST2G S-8520 S-8520A28MC-AVNT2G S-8521 mark A E sot-89-3 S-8540 seiko 320 240 IRF7606 S-8521B20MC-ATFT2G MA737 2SA1213Y toyota IC regulator built TOSHIBA 2SA1213Y TEXT
datasheet frame
Abstract: (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base , : Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The , ., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 , 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the output current by , . Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the ... Seiko Instruments
Original
datasheet

43 pages,
490.65 Kb

S-8520 TEXT
datasheet frame
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-O 2SA1213-Y Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) PNP Silicon Epitaxial Transistors Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating ... Micro Commercial Components
Original
datasheet

4 pages,
315.42 Kb

TEXT
datasheet frame
Abstract: MCC Micro Commercial Components 2SA1213-O 2SA1213-O TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-Y Features · x x x x · · · Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Halogen free ... Micro Commercial Components
Original
datasheet

4 pages,
491.69 Kb

2SA1213-O TEXT
datasheet frame
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-O 2SA1213-Y Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0us(typ.) PNP Silicon Epitaxial Transistors Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating ... Micro Commercial Components
Original
datasheet

4 pages,
299.52 Kb

TEXT
datasheet frame
Abstract: VO CO GND S-817A11B S-817A11B VSS VIN VDD Cin PNP 2SA1213Y VIN CO Ta ... Seiko Instruments
Original
datasheet

2 pages,
27.52 Kb

S-817 817A1 3S81 2SA1213-Y 817a s817a11b 2SA1213Y TEXT
datasheet frame
Abstract: type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68 k Base capacitor (Cb) : 2200 pF , Capacitor : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. , Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb , Bipolar PNP type Figure 7 shows a sample circuit diagram using Toshiba 2SA1213-Y for the bipolar , determined by the hFE-value and the Rb-value of that bipolar transistor. 2SA1213-Y VIN Rb Cb EXT ... Seiko Instruments
Original
datasheet

37 pages,
588.97 Kb

TOSHIBA 2SA1213Y S-8520/8521 TEXT
datasheet frame
Abstract: Electric Industrial Co., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base , Electric Industrial Co., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base , Electric Industrial Co., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base , using Toshiba Corporation 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for , value of that bipolar transistor. Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure ... Seiko Instruments
Original
datasheet

43 pages,
483.79 Kb

toyota IC regulator built TM6201 S-8521F48mc-bqh-t2 pin diagram ic 7420 S-8520/8521 TEXT
datasheet frame
Abstract: : Matsushita Electronics Corporation TE (16V, 22 mF tantalum type). Transistor : Toshiba 2SA1213Y. Base , : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68KW Base capacitor (Cb) : 2200 pF (Ceramic type) The , using Toshiba 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the , bipolar transistor. 2SA1213-Y VIN Rb VIN Cb EXT Figure 7 The Rb-value is given by the ... Seiko Instruments
Original
datasheet

26 pages,
618.75 Kb

S-8520A50MC-AWJ-T2 S-8520A25MC-AVK-T2 S-8520A30MC-AVP-T2 S-8520A33MC-AVS-T2 MATSUA S-8521 S-8521A25MC-AXK-T2 s8520b25mcarkt2 S-8520 TM6201 8521A TOSHIBA 2SA1213Y TEXT
datasheet frame
Abstract: (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68 k Base , Capacitor : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y , Capacitor : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y , sample circuit diagram using Toshiba 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for , Rb-value of that bipolar transistor. 2SA1213-Y VIN Rb Cb EXT VIN Figure 7 The Rb-value ... Seiko Instruments
Original
datasheet

36 pages,
513.77 Kb

S-8520/8521 TEXT
datasheet frame
Abstract: Capacitor : Matsushita Electronics Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y , Corporation TE (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68 k Base , (16 V, 22 uF tantalum type). Transistor : Toshiba 2SA1213Y. Base resistance (Rb) : 0.68K Base , shows a sample circuit diagram using Toshiba 2SA1213-Y for the bipolar transistor (PNP). The driving , and the Rb-value of that bipolar transistor. 2SA1213-Y VIN Rb Cb EXT VIN Figure 7 ... Seiko Instruments
Original
datasheet

38 pages,
497.82 Kb

S-8520/8521 TEXT
datasheet frame
Abstract: 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The recommended , using Toshiba Corporation 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for , value of that bipolar transistor. Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure ... Seiko Instruments
Original
datasheet

43 pages,
5090.54 Kb

pin diagram ic 7420 toyota IC regulator built S-8520/8521 TEXT
datasheet frame
Abstract: (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base , : Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 k Base capacitor (Cb): 2200 pF (Ceramic type) The , ., Ltd. TE (16 V, 22uF tantalum type) Transistor: Toshiba Corporation 2SA1213Y Base resistance (Rb): 0.68 , 2SA1213-Y for the bipolar transistor (PNP). The driving capacity for increasing the output current by , . Toshiba Corporation 2SA1213-Y VIN Rb Cb EXT VIN Figure 11 The Rb-value is given by the ... Seiko Instruments
Original
datasheet

43 pages,
473.16 Kb

S-8520 TEXT
datasheet frame

Archived Files

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User Photos 23/05/2012 8 Kb JPG 2sa1213y.jpg
2SA1213-Y 0.5 0 3 Si3441DV Si3441DV 0.11 5e-10 4 Si6943DQ Si6943DQ 0.1 6e-10 4 IRF7606 IRF7606 0.15 4.7e-10 4
/datasheets/files/sii/gtscat_ver.4/siidev.dev
SII 29/05/2002 2.69 Kb DEV siidev.dev

Shortform Datasheet Search

Part Manufacturer Description Shortform Datasheet Ordering
2SA1213Y N/A Si PNP Lo-Pwr BJT

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