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Part : 1SS404,H3F Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0192 Price Each : $0.0235
Part : 1SS404,H3XGF(B Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0220 Price Each : $0.0304
Part : 1SS404TPH3F Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS404TPH3F Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0205 Price Each : $0.0284
Part : 1SS404(TPH3,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 5,600 Best Price : $0.9260 Price Each : $1.12
Part : 1SS404,H3F Supplier : Toshiba Manufacturer : Chip1Stop Stock : 3,250 Best Price : $0.0347 Price Each : $0.0943
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1SS404 Datasheet

Part Manufacturer Description PDF Type
1SS404 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Diode Original
1SS404 Jiangsu Changjiang Electronics Technology High Speed SWITCHING Diodes Original
1SS404 Kexin High Speed Switching Diodes Original
1SS404 Toshiba Original
1SS404 Toshiba Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: USC; Number of Pins: 2; Features: low VF; Internal connection: single; V R (V): (max 20) Original
1SS404 TY Semiconductor High Speed Switching Diodes - SOD-323 Original
1SS404TPH3F Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 300MA USC Original

1SS404

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1SS404 FEATURES Pb Small surface mounting type. Lead-free High speed. High reliability with high , INFORMATION Type No. Marking 1SS404 S51 MAXIMUM RATING @ Ta=25 Package Code SOD-323 unless , Electrical Production specification Silicon Epitaxial Planar Diode 1SS404 PACKAGE OUTLINE , FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 1SS404 SOD BL Galaxy Electrical
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DIODE S51 SOD323 Package footprint h 027 marking A SOD323 MARKING TA SOD323 DIODE BL/SSSDB007 3000/T
Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Shottlky Barrire Type 1SS404 High Speed Switching Applications · · · · Tow-pin small packages are suitable for higher mounting densities Excellent in Forward Current and Forward Voltage Characteristics : VF (3) = 0.8 V (typ.) Fast Reverse Recovery Time: IR = 50 uA , . 0.16 0.22 0.38 46 Max 0.45 50 uA pF V Unit 1 2001-12-25 1SS404 IF ­ VF 10 m 100 m Ta , Reverse voltage VR (V) Ambient temperature Ta (°C) 2 2001-12-25 1SS404 RESTRICTIONS Toshiba
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Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Shottlky Barrire Type 1SS404 High Speed Switching Applications Unit: mm · Tow-pin small packages are suitable for higher mounting densities · Excellent in Forward Current and Forward Voltage Characteristics : VF (3) = 0.8 V (typ.) · Fast , 2001-12-25 1SS404 IF ­ VF IR ­ VR 10 m Ta = 100°C 75°C 50°C 25°C Ta = 100°C 1m 75 , 50 75 100 Ambient temperature Ta (°C) 2 2001-12-25 1SS404 RESTRICTIONS ON Toshiba
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes 1SS404 SOD-323 High Speed SWITCHING Diodes + FEATURES Small surface mounting type High Speed High reliability with high surge current handing capability - MARKING:S51 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Symbol Limits Unit Peak reverse voltage VRM 25 , Capacitance between terminals CT 46 Typical Characteristics 1SS404 Jiangsu Changjiang Jiangsu Changjiang Electronics Technology
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CT 46
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes 1SS404 High Speed SWITCHING Diodes FEATURES Small surface mounting type High Speed High reliability with high surge current handing capability Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Symbol Limits Unit Peak reverse voltage VRM 25 V DC reverse , CT 46 Typical Characteristics 1SS404 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
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Abstract: ORDERING INFORMATION Product No. 1SS404-T1 1. 2. Package Type Shipping Quantity SOD , ), add â'-LFâ' suffix to part number above. For example, 1SS404-T1-LF. WON-TOP ELECTRONICS and are , ® 1SS404 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low , : April, 2012 www.wontop.com 1 ® 1SS404 WON-TOP ELECTRONICS Electrical Characteristics , . Revision: April, 2012 ® 1SS404 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT Won-Top Electronics
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MIL-STD-202
Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications · · · · Two-pin small packages are suitable for higher mounting densities Low forward voltage : VF (3) = 0.38 V (typ.) Low reverse current: IR = 50 A (max) Small total capacitance: CT = 46 pF (typ , A pF V Unit 1 2007-11-01 1SS404 IF ­ V F 10 m 100 m Ta = 100°C 75°C 50°C 25°C IR ­ , (°C) 2 2007-11-01 1SS404 RESTRICTIONS ON PRODUCT USE · The information contained herein Toshiba
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Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Shottlky Barrire Type 1SS404 High Voltage Switching Applications · · · · Tow-pin small packages are suitable for higher mounting densities Excellent in Forward Current and Forward Voltage Characteristics : VF (3) = 0.8 V (typ.) Fast Reverse Recovery Time: IR = 50 uA , . 0.16 0.22 0.38 46 Max 0.45 50 uA pF V Unit 1 2001-10-03 1SS404 IF ­ VF 10 m 100 m Ta , Reverse voltage VR (V) Ambient temperature Ta (°C) 2 2001-10-03 1SS404 RESTRICTIONS Toshiba
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Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications · · · · Two-pin small packages are suitable for higher mounting densities Low forward voltage : VF (3) = 0.38 V (typ.) Low reverse current: IR = 50 A (max) Small total capacitance: CT = 46 pF (typ , A pF V Unit 1 2004-05-28 1SS404 IF ­ V F 10 m 100 m Ta = 100°C 75°C 50°C 25°C IR ­ , (°C) 2 2004-05-28 1SS404 RESTRICTIONS ON PRODUCT USE · The information contained herein Toshiba
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Abstract: 1SS404 1SS404 · : mm 2 · : VF (3) = 0.38 V () · : IR = 50 A () · : CT = 46 pF () (Ta = 25°C) VRM 25 V VR 20 V IFM 700 mA , view) S5 1 2007-11-01 1SS404 IF ­ V F IR ­ V R 10 m Ta = 100°C 75°C 50°C 25 , 125 150 (°C) 2007-11-01 1SS404 · · · · -
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Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Shottlky Barrire Type 1SS404 High Voltage Switching Applications · Tow-pin small packages are suitable for higher mounting densities · Excellent in , 2001-06-07 1SS404 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , 2 2001-06-07 1SS404 IF ­ VF IR ­ VR 10 m Ta = 100°C 75°C 50°C 25°C Ta = 100 , (V) 25 50 75 100 Ambient temperature Ta (°C) 3 2001-06-07 1SS404 Toshiba
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Abstract: 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8 L1 47 mH VIN 3.2 V~4.2 V 40 3.2 , (mA) 90 VCC 50 D IF L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia , L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03 , ) 90 A VCC 50 D IF L1: TDK LDR344812T-440 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia , : TDK LDR344812T-390 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Susumu RL0510S Toshiba
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TB62731FU nichia nscw215t
Abstract: 1SS404 HIGH SPEED SWITCHING DIODES FEATURES * Small surface mounting type * High Speed * High reliability with high surge current handing capability SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting , 1SS404 UNITS VRM RATINGS 25 Volts Maximum DC Reverse Voltage VR 20 Volts , pF 2006-3 RATING AND CHARACTERISTICS CURVES ( 1SS404) 10m Ta=100 C O Ta=100 C 75OC 50OC Rectron Semiconductor
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Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 Unit: mm High Speed Switching Applications â'¢ Two-pin small packages are suitable for higher mounting densities â'¢ Low forward voltage : VF (3) = 0.38 V (typ.) â'¢ Low reverse current: IR = 50 μA (max) â , ¯ 46 ⯠pF Start of commercial production 1999-06 1 2014-03-01 1SS404 IF â'" V , 125 150 Ambient temperature Ta (°C) 2 2014-03-01 1SS404 RESTRICTIONS ON PRODUCT USE Toshiba
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Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications Unit: mm â'¢ Two-pin small packages are suitable for higher mounting densities â'¢ Low forward voltage : VF (3) = 0.38 V (typ.) â'¢ Low reverse current: IR = 50 ÂuA (max) â'¢ Small total capacitance: CT = 46 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Symbol Rating Unit VRM 25 V Reverse voltage VR 20 V Toshiba
Original
Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Shottlky Barrire Type 1SS404 High Voltage Switching Applications · Tow-pin small packages are suitable for higher mounting densities · Excellent in Forward Current and Forward Voltage Characteristics : VF (3) = 0.8 V (typ.) · Fast Reverse Recovery , to change without notice. 2000-04-12 1/3 1SS404 Electrical Characteristics (Ta = 25 , 0, f = 1 MHz 46 pF 2000-04-12 2/3 1SS404 IF ­ VF IR ­ VR 10 m Ta = Toshiba
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961001EAA1
Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Shottky Barrire Type 1SS404 High Speed Switching Applications Unit: mm â'¢ Tow-pin small packages are suitable for higher mounting densities â'¢ Excellent in Forward Current and Forward Voltage Characteristics : VF (3) = 0.8 V (typ.) â'¢ Fast , CT VR = 0, f = 1 MHz ⯠46 ⯠pF 1 2004-05-07 1SS404 IF â'" VF IR â , 100 Ta 125 150 (°C) 2004-05-07 1SS404 RESTRICTIONS ON PRODUCT USE 030619EAA Toshiba
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Abstract: efficiency ON C2 1 uF (mA) 90 A VCC 50 L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 , (mA) 90 VCC 50 IF L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia , L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03 , (%) 90 VCC 50 IF L1: TDK LDR344812T-440 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia , L1: TDK LDR344812T-390 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Susumu RL0510S Toshiba
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TB62731FUG SSOP6
Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications Unit: mm · Two-pin small packages are suitable for higher mounting densities · Low forward voltage : VF (3) = 0.38 V (typ.) · Low reverse current: IR = 50 uA (max) · Small total , capacitance CT VR = 0, f = 1 MHz 46 pF 1 2004-05-28 1SS404 IF ­ VF IR ­ VR , (°C) 2004-05-28 1SS404 RESTRICTIONS ON PRODUCT USE 030619EAA · The information Toshiba
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Abstract: 1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications Unit: mm · Two-pin small packages are suitable for higher mounting densities · Low forward voltage : VF (3) = 0.38 V (typ.) · Low reverse current: IR = 50 A (max) · Small total , capacitance CT VR = 0, f = 1 MHz 46 pF 1 2007-11-01 1SS404 IF ­ V F IR ­ V , 2007-11-01 1SS404 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and Toshiba
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Abstract: : Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8 60 15 , Power efficiency 70 GND R_ sens 1.8 L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED , L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8 60 , : TDK LDR344812T-440 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8 60 , R_sens 1.8 L1: TDK LDR344812T-390 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Susumu Toshiba
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Abstract: efficiency ON C2 1 uF (mA) 90 A VCC 50 L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 , (mA) 90 VCC 50 IF L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia , L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03 , (%) 90 VCC 50 IF L1: TDK LDR344812T-440 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia , L1: TDK LDR344812T-390 S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Susumu RL0510S Marktech Optoelectronics
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RL0510S-1R8 TB62731
Abstract: K GND Power efficiency 70 GND R_sens 1.8 L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 , 1.8 L1: Toko A914BYW-470M S-Di: Toshiba 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03 , 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Rohm MCR03-1R8 60 15 50 IF 40 3.2 3.4 3.6 3.8 4 10 , S-Di 90 Power efficiency GND R_sens 1.8 L1: TDK LDR344812T-440 S-Di: Toshiba 1SS404 20 V , 1SS404 20 V/1A LED: Nichia NSCW215T R_sens: Susumu RL0510S-1R8 60 15 50 IF 40 3.2 3.4 3.6 3.8 4 Toshiba
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