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1SS389 Datasheet

Part Manufacturer Description PDF Type Ordering
1SS389 Galaxy Semi-Conductor Holdings Schottky Barrier Diode
ri

3 pages,
177.97 Kb

Original Buy
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1SS389 Toshiba shottky barrier diode
ri

3 pages,
146.86 Kb

Original Buy
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1SS389 Toshiba DIODE (HIGH SEPPD SWITCHING APPLICATION)
ri

2 pages,
119.74 Kb

Scan Buy
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1SS389 Toshiba DIODE
ri

2 pages,
119.74 Kb

Scan Buy
datasheet frame
1SS389(TL3,F,D) Toshiba 1SS389 - X34 PB-F ESC SHOTTKY BARRIER DIODE (LF), IFM=200MA
ri

3 pages,
201.17 Kb

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1SS389TPH3F Toshiba 1SS389TPH3F - Diode Small Signal Schottky 15V 0.1A 2-Pin ESC T/R
ri

3 pages,
201.17 Kb

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1SS389,H3F Toshiba 1SS389 - Small-Signal Schottky Barrier Diodes
ri

3 pages,
201.15 Kb

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1SS389 TY Semiconductor High Speed Switching Application - SOD-523
ri

1 pages,
79.85 Kb

Original Buy
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1SS389 Kexin High Speed Switching Application
ri

1 pages,
28.7 Kb

Original Buy
datasheet frame

1SS389

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ® 1SS389 WON-TOP ELECTRONICS ORDERING INFORMATION Product No. 1SS389-T1 1. 2. Package , , 1SS389-T1-LF. WON-TOP ELECTRONICS and are registered trademarks of Won-Top Electronics Co., Ltd (WTE , ® 1SS389 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low , . Revision: May, 2014 www.wontop.com 1 ® 1SS389 WON-TOP ELECTRONICS Electrical Characteristics , © Won-Top Electronics Co., Ltd. Revision: May, 2014 ® 1SS389 WON-TOP ELECTRONICS MARKING ... Won-Top Electronics
Original
datasheet

4 pages,
37.43 Kb

1SS389 TEXT
datasheet frame
Abstract: 1SS389 1SS389 : mm 2 : VF = 0.23V () @IF = 5mA (Ta = 25°C) VRM 15 V VR 10 V IFM 200 mA IO 100 mA IFSM 1 A (10 m s) P* 150 mW , 10V CT VR = 0, f = 1MHz V (TOP VIEW) 1 2007-11-01 1SS389 2 2007-11-01 1SS389 · · · · "" · · · ... Original
datasheet

3 pages,
277.82 Kb

1SS389 TEXT
datasheet frame
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-13 1SS389 2 2001-06-13 1SS389 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to improve the ... Toshiba
Original
datasheet

3 pages,
146.86 Kb

1SS389 TEXT
datasheet frame
Abstract: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS389 FEATURES , mounted circuits. SOD-523 ORDERING INFORMATION Type No. Marking 1SS389 Package Code S4 , Schottky Barrier Diode 1SS389 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document , Schottky Barrier Diode 1SS389 PACKAGE OUTLINE Plastic surface mounted package SOD-523 SOD , Unitmm PACKAGE INFORMATION Device Package Shipping 1SS389 SOD-523 3000/Tape&Reel ... BL Galaxy Electrical
Original
datasheet

3 pages,
177.97 Kb

SOD523 schottky marking S4 DIODE marking S4 S4 DIODE galaxy s4 Marking S4 SOD 023 schottky diode 100A 1SS389 S4 1SS389 marking code s4 diode sod-523 DIODE marking S4 sod MARKING S4 diode schottky S4 DIODE schottky TEXT
datasheet frame
Abstract: 1SS389 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 P Top View Marking Code: "P" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit , ) ® Dated : 23/11/2006 1SS389 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International , /2006 1SS389 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND ... Semtech Electronics
Original
datasheet

3 pages,
211.17 Kb

"MARKING CODE P" 1SS389 TEXT
datasheet frame
Abstract: 1SS389 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 SW Top View Marking Code: "SW" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit , Exchange, Stock Code: 724) ® Dated : 03/05/2006 1SS389 SEMTECH ELECTRONICS LTD. (Subsidiary , Code: 724) ® Dated : 03/05/2006 1SS389 PACKAGE OUTLINE Plastic surface mounted package; 2 ... Semtech Electronics
Original
datasheet

3 pages,
275.66 Kb

1SS389 TEXT
datasheet frame
Abstract: 1SS389 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING · Low forward voltage: DESCRIPTION PIN VF = 0.23V (typ.) @IF=5mA 1 Cathode 2 Anode 2 1 SW Top View Marking Code: "SW" Simplified outline SOD-523 and symbol , /2004 1SS389 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 30/10/2004 1SS389 ... Semtech Electronics
Original
datasheet

3 pages,
279.68 Kb

1SS389 TEXT
datasheet frame
Abstract: 1SS389 Schottky Barrier Diode SOD-523 Features Low forward voltage. Small package. Applications Schottky diode in surface mounted circuits. Dimensions in inches and (millimeters) Ordering Information Type No. 1SS389 Marking S4 Package Code SOD-523 MAXIMUM RATING @ Ta=25 unless otherwise specified Parameter Peak reverse voltage DC Reverse voltage Continuous forward current Surge , IR=100A IF=1mA IF=5mA IF=100mA VR=10V VR=0,f=1MHz 1SS389 Schottky Barrier Diode TYPICAL ... Original
datasheet

2 pages,
243.49 Kb

S4 1SS389 1ss389 marking code s4 diode sod-523 DIODE marking S4 sod s4 schottky diode MARKING S4 diode schottky S4 DIODE schottky 1SS389 TEXT
datasheet frame
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 , 1/2 1SS389 2000-12-15 2/2 Toshiba ... Toshiba
Original
datasheet

2 pages,
141.94 Kb

GENERAL SEMICONDUCTOR DIODE 1SS389 TEXT
datasheet frame
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2007-11-01 1SS389 2 2007-11-01 1SS389 RESTRICTIONS ON PRODUCT USE 20070701-EN 20070701-EN GENERAL · The information contained herein is ... Toshiba
Original
datasheet

3 pages,
196.59 Kb

1SS389 TEXT
datasheet frame
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO , 1SS389 2 2014-03-01 1SS389 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its ... Toshiba
Original
datasheet

3 pages,
201.16 Kb

1SS389 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/32896203-946800ZC/dio_scho.xls
Toshiba 28/10/1996 16.5 Kb XLS dio_scho.xls

Toshiba Cross Reference Results

Toshiba Part Industry Part Manufacturer Description Category
1SS389 Buy HSC88 Buy Renesas Small signal Schotky barrier diode - ESC - SOD-523 Diodes

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