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Part : 1SS389(TPL3,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0293 Price Each : $0.0406
Part : 1SS389,H3F Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS389,L3F Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0192 Price Each : $0.0235
Part : 1SS389,L3F(T Supplier : Toshiba Manufacturer : Avnet Stock : 8,000 Best Price : $0.0145 Price Each : $0.02
Part : 1SS389(TPH3,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 4,200 Best Price : $0.9090 Price Each : $1.10
Part : 1SS389,L3F Supplier : Toshiba Manufacturer : Chip1Stop Stock : 15,999 Best Price : $0.0304 Price Each : $0.1440
Part : 1SS389-G Supplier : Comchip Technology Manufacturer : Chip1Stop Stock : 3,000 Best Price : $0.0376 Price Each : $0.1015
Shipping cost not included. Currency conversions are estimated. 

1SS389 Datasheet

Part Manufacturer Description PDF Type
1SS389 Galaxy Semi-Conductor Holdings Schottky Barrier Diode Original
1SS389 Kexin High Speed Switching Application Original
1SS389 Toshiba shottky barrier diode Original
1SS389 TY Semiconductor High Speed Switching Application - SOD-523 Original
1SS389 Toshiba DIODE (HIGH SEPPD SWITCHING APPLICATION) Scan
1SS389 Toshiba DIODE Scan
1SS389,H3F Toshiba 1SS389 - Small-Signal Schottky Barrier Diodes Original
1SS389(TL3,F,D) Toshiba 1SS389 - X34 PB-F ESC SHOTTKY BARRIER DIODE (LF), IFM=200MA Original
1SS389TPH3F Toshiba 1SS389TPH3F - Diode Small Signal Schottky 15V 0.1A 2-Pin ESC T/R Original

1SS389

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ® 1SS389 WON-TOP ELECTRONICS ORDERING INFORMATION Product No. 1SS389-T1 1. 2. Package , , 1SS389-T1-LF. WON-TOP ELECTRONICS and are registered trademarks of Won-Top Electronics Co., Ltd (WTE , ® 1SS389 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low , . Revision: May, 2014 www.wontop.com 1 ® 1SS389 WON-TOP ELECTRONICS Electrical Characteristics , © Won-Top Electronics Co., Ltd. Revision: May, 2014 ® 1SS389 WON-TOP ELECTRONICS MARKING Won-Top Electronics
Original
MIL-STD-202 3000/T
Abstract: 1SS389 1SS389 : mm 2 : VF = 0.23V () @IF = 5mA (Ta = 25°C) VRM 15 V VR 10 V IFM 200 mA IO 100 mA IFSM 1 A (10 m s) P* 150 mW , 10V CT VR = 0, f = 1MHz V (TOP VIEW) 1 2007-11-01 1SS389 2 2007-11-01 1SS389 · · · · "" · · · -
Original
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-13 1SS389 2 2001-06-13 1SS389 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the Toshiba
Original
Abstract: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS389 FEATURES , mounted circuits. SOD-523 ORDERING INFORMATION Type No. Marking 1SS389 Package Code S4 , Schottky Barrier Diode 1SS389 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document , Schottky Barrier Diode 1SS389 PACKAGE OUTLINE Plastic surface mounted package SOD-523 SOD , Unitmm PACKAGE INFORMATION Device Package Shipping 1SS389 SOD-523 3000/Tape&Reel BL Galaxy Electrical
Original
S4 DIODE schottky MARKING S4 diode schottky DIODE marking S4 sod marking code s4 diode sod-523 S4 1SS389 schottky diode 100A BL/SSSKD005
Abstract: 1SS389 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 P Top View Marking Code: "P" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit , ) ® Dated : 23/11/2006 1SS389 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International , /2006 1SS389 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND Semtech Electronics
Original
Abstract: 1SS389 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 SW Top View Marking Code: "SW" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit , Exchange, Stock Code: 724) ® Dated : 03/05/2006 1SS389 SEMTECH ELECTRONICS LTD. (Subsidiary , Code: 724) ® Dated : 03/05/2006 1SS389 PACKAGE OUTLINE Plastic surface mounted package; 2 Semtech Electronics
Original
Abstract: 1SS389 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING · Low forward voltage: DESCRIPTION PIN VF = 0.23V (typ.) @IF=5mA 1 Cathode 2 Anode 2 1 SW Top View Marking Code: "SW" Simplified outline SOD-523 and symbol , /2004 1SS389 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 30/10/2004 1SS389 Semtech Electronics
Original
Abstract: 1SS389 Schottky Barrier Diode SOD-523 Features Low forward voltage. Small package. Applications Schottky diode in surface mounted circuits. Dimensions in inches and (millimeters) Ordering Information Type No. 1SS389 Marking S4 Package Code SOD-523 MAXIMUM RATING @ Ta=25 unless otherwise specified Parameter Peak reverse voltage DC Reverse voltage Continuous forward current Surge , IR=100A IF=1mA IF=5mA IF=100mA VR=10V VR=0,f=1MHz 1SS389 Schottky Barrier Diode TYPICAL -
Original
s4 schottky diode
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 , 1/2 1SS389 2000-12-15 2/2 Toshiba Toshiba
Original
GENERAL SEMICONDUCTOR DIODE 961001EAA2
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2007-11-01 1SS389 2 2007-11-01 1SS389 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is Toshiba
Original
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-13 1SS389 2 2001-06-13 1SS389 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the Toshiba
Original
Abstract: 1SS389 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING · Low forward voltage: DESCRIPTION PIN VF = 0.23V (typ.) @IF=5mA 1 Cathode 2 Anode 2 1 SW Top View Marking Code: "SW" Simplified outline SOD-523 and symbol , 1SS389 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/10/2004 1SS389 PACKAGE Semtech Electronics
Original
Abstract: TOSHIBA 1SS389 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS389 HIGH SPEED SWITCHING APPLICATION Unit in mm â'¢ Small Package â'¢ Low Forward Voltage : Vp = 0.23 V (TYP.) @IF = 5mA MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak) Forward Current ÏFM 200 mA Average Forward Current io 100 mA , information contained herein is subject to change without notice. 1997-05-07 1/2 TOSHIBA 1SS389 If - VF -
OCR Scan
lta 301
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO , 1SS389 2 2014-03-01 1SS389 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its Toshiba
Original
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2007-11-01 1SS389 2 2007-11-01 1SS389 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates Toshiba
Original
11-G1
Abstract: 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA IFSM 1 A Power dissipation P* 150 mW Junction temperature Tj Toshiba
Original
Abstract: 1SS389 TOSHIBA TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS389 Unit in mm HIGH SPEED SW ITCHING APPLICATIO N â'¢ â'¢ Small Package Low Forward Voltage : Vp = 0.23 V (TYP.) @Ip = 5mA 0.6 ± 0.1 r z M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Vr m Voltage Reverse Voltage Vr Maximum (Peak) Forward rFM Current , 50 C O 50 < H o C » r t> O P3 I » SO < 1SS389 -
OCR Scan
Abstract: T O SH IB A TO SHIBA DIODE SILICON EPITAXIAL SCH O TTKY BARRIER TYPE 1SS389 1SS389 HIGH SPEED SW ITCHING APPLICATION Unit in mm 0.6 · · Small Package Low Forward Voltage : Vp = 0.23 V (TYP.) @Ip = 5mA RATING 15 10 200 100 1 150 125 -5 5 - 1 2 5 UNIT V V mA mA A mW °C °C 0.3 !±0l r - r M AXIM UM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Vr m , ) P3 P3 50 CO 50 < H r < O » I < t> O P3 » 50 < 1SS389 -
OCR Scan
Abstract: TOSHIBA TO SHIBA DIODE 1SS389 u SILICON EPITAXIAL SCHOTTKY BARRIER TYPE , dimension 4X4m m. IO IO I 0 LTI 1 o / / Ta (°C) 1SS389 ISJ n 5 -
OCR Scan
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS389 Features · · · · · High speed switching diode Surface mount package Mechanical Data · · · · For general purpose switching applications Marking: S4 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Case: SOD-523, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Indicated by Cathode Band Lead Free Finish/RoHS Compliant Micro Commercial Components
Original
Abstract: (SOD-523) USC (SOD-323) 1SS389 0.23 0.3 SC2 VR IO (V) (mA) 20 7 10 , ­ CST2 5 10 100 10 SC2 ESC (SOD-523) 1SS389 0.35 0.5 100 VF @IF @VR -
Original
TC7SZ00AFS TC7SZ00FE TC7SZ00FU TC7SZ00F TC7SZ38FU TC7SZ02F DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU BCJ0052E SC-88A SC-74A
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