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Part : 1SS357(TH3ASAW,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS357(TPH3,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : €0.04 Price Each : €0.08
Part : 1SS357(TPH3,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS357(TPH3,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 18,983 Best Price : $0.0650 Price Each : $0.0945
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1SS357 Datasheet

Part Manufacturer Description PDF Type
1SS357 Galaxy Semi-Conductor Holdings Surface mounting schottky Diode Original
1SS357 Kexin Low Voltage High Speed Switching Original
1SS357 Toshiba shottky barrier diode Original
1SS357 Toshiba Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: USC; Number of Pins: 2; Features: standard; Internal connection: single; V R (V): (max 40) Original
1SS357 Toshiba Japanese - Diodes Original
1SS357 Transys Electronics Schottky Diodes Original
1SS357 TY Semiconductor Low Voltage High Speed Switching - SOD-323 Original
1SS357 Weitron Surface Mount Schottky Barrier Diode Original
1SS357 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS357 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS357 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS357TPH2 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS357TPH3 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS357(TPH3,F) Toshiba 1SS357 - Diode Small Signal Schottky 45V 0.1A 2-Pin USC T/R Original
1SS357TPH4 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS357TPHR2 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS357TPHR3 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS357TPHR4 Toshiba 1SS357 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original

1SS357

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1SS357 1SS357 : mm 2 : VF (3) = 0.54V () : IR = 5A () JEDEC JEITA (Ta = 25°C) : 0.004 g () VRM 45 V , : (//) ( / ) () () *: (: 20mm×20mm: 4mm×4mm) 1 2007-11-01 1SS357 (Ta = 25°C) VF (1) IF = , 1MHz VF (3) (TOP VIEW) V 2 2007-11-01 1SS357 3 2007-11-01 1SS357 · · · · "" · · · · Toshiba
Original
1-1e1a
Abstract: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead(Pb)-Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5uA , WEITRON http://www.weitron.com.tw 1/3 13-Sep-05 1SS357 MAXIMUM RATING (TA , 0.28 0.36 V 0.6 Device Marking & Equivalent Circuit diagram Item Marking 1SS357 S31 WEITRON http://www.weitron.com.tw Equivalent Circuit diagram 1 2/3 2 13-Sep-05 1SS357 Weitron
Original
schottky 1ss357 MIL-STD-202
Abstract: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5A (max) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse , 0.36 0.54 18 Max 0.60 5 25 A pF V Unit (Top View) Marking 1 2007-11-01 1SS357 2 , specified operating 1SS357 ranges as set forth in the most recent TOSHIBA products specifications. Also Toshiba
Original
Abstract: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5μA (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , Marking Start of commercial production 1990-01 1 2014-03-01 1SS357 2 2014-03-01 1SS357 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its subsidiaries and affiliates Toshiba
Original
Abstract: 1SS357 Surface Mounting Schottky Diode SOD-323 Features Small Surface Mounting Type: SOD-323 Low VF Low IR Applications Surface mount schottky diode Dimensions in inches and (millimeters) Ordering Information Type No. 1SS357 Marking S31 Package Code SOD-323 MAXIMUM RATING @ Ta=25 Parameter Non-Repetitive Peak reverse voltage DC Reverse Voltage Peak forward Current Average Rectified Output Current Junction temperature Storage temperature unless otherwise specified Symbol VRM -
Original
s31 schottky diode sod323 marking NO
Abstract: www.wontop.com 3 ® 1SS357 WON-TOP ELECTRONICS ORDERING INFORMATION Product No. 1SS357-T1 1. 2 , , 1SS357-T1-LF. WON-TOP ELECTRONICS and are registered trademarks of Won-Top Electronics Co., Ltd (WTE , ® 1SS357 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low , © Won-Top Electronics Co., Ltd. Revision: April, 2012 www.wontop.com 1 ® 1SS357 WON-TOP , Characteristics © Won-Top Electronics Co., Ltd. Revision: April, 2012 ® 1SS357 WON-TOP ELECTRONICS Won-Top Electronics
Original
3000/T
Abstract: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS357 LO W VOLTAGE HIGH SPEED SW ITCHING, Low Forward Voltage Low Resistance C urrent Sm all Package V f (3 ) = 0.54 (Typ.) I r = 5^A (Max.) SC-70 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC M aximum (Peak) Reverse Voltage Reverse Voltage M aximum (Peak) Forward C urrent Average Forward C urrent Surge C urrent (10ms) Power Dissipation Junction , - -ZD m S 3 ZD 1193 1SS357 If - V f ir - vr FORWARD CURRENT FORWARD -
OCR Scan
Abstract: BL Galaxy Electrical Production specification Surface mounting schottky Diode 1SS357 FEATURES Pb Small Surface Mounting Type: Lead-free SOD-323 Low VF Low IR APPLICATIONS Surface mount schottky diode SOD-323 ORDERING INFORMATION Type No. Marking 1SS357 S31 , specification Surface mounting schottky Diode 1SS357 PACKAGE OUTLINE Plastic surface mounted package , PACKAGE INFORMATION Device Package Shipping 1SS357 SOD-323 3000/Tape&Reel Document BL Galaxy Electrical
Original
SOD323 Package footprint marking A SOD323 diode SOD-323 BL GALAXY diode SOD-323 1SS357 SOD-323 sod323 BL/SSSKB004
Abstract: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead(Pb)-Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5uA , ://www.weitron.com.tw 1/3 MILLMETERS Min Max 13-Sep-05 1SS357 MAXIMUM RATING (TA , 0.28 0.36 V 0.6 Device Marking & Equivalent Circuit diagram Item Marking 1SS357 S31 WEITRON http://www.weitron.com.tw Equivalent Circuit diagram 1 2/3 2 13-Sep-05 1SS357 Weitron
Original
free download IR circuit diagram
Abstract: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5ÂuA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Maximum (peak) reverse voltage Average forward current IO 100 mA Toshiba
Original
000707EAA2
Abstract: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5ÂuA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , . 2000-11-10 1/2 1SS357 000707EAA2 â'¢ The TOSHIBA products listed in this document are intended Toshiba
Original
Abstract: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5uA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , Reliability Handbook" etc. 2000-11-21 1/2 1SS357 000707EAA2 · The TOSHIBA products listed in Toshiba
Original
Abstract: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1 Ii) Ii) «El 5 ^J LOW VOLTAGE HIGH SPEED SWITCHING. â'¢ Low Forward Voltage â'¢ Low Resistance Current â'¢ Small Package MAXIMUM RATINGS (Ta = 25°C) VF (3) = 0.54 (Typ.) = (Max.) SC-70 CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage Vr 80 V Maximum (Peak) Forward Current , 1SS357 If - VF / S f W\ // f h -
OCR Scan
961001EAA2
Abstract: 1SS357 SCHOTTKY DIODE FEATURES * Small Package * Low VF ,low IR SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.004 grams .071(1.80) .063(1.60) .006(.15) .014(.35) .010(.25 , 1SS357 UNITS VRM RATINGS 45 Volts Maximum DC Reverse Voltage VR 40 Volts , CHARACTERISTICS CURVES ( 1SS357 ) 100u 300m 100m O 75 10u 3u Ta=100 C 30m IR , REVERSE Rectron Semiconductor
Original
Abstract: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , V Marking (Top View) 1 2007-11-01 1SS357 2 2007-11-01 1SS357 Toshiba
Original
Abstract: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5uA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , Reliability Handbook" etc. 2000-11-21 1/2 1SS357 000707EAA2 · The TOSHIBA products listed in Toshiba
Original
1E1A
Abstract: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , View) Unit V Marking 1 2007-11-01 1SS357 2 2007-11-01 1SS357 RESTRICTIONS Toshiba
Original
Abstract: MCC TM Micro Commercial Components #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth #7;#24;#6;#25;#15;#26;#15;#15; #27;#21;#5;#28; #29;#6;#30;#31;#15;#31; #6;!#16;#15;"##25;#26;#26; $ %#29;#6; #6; #6; #30;#31;#15;#31; #6;!#16;#15;"##25;#26;#25; 1SS357 Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Halogen free available upon request by adding suffix "-HF" High speed switching diode 45 Volt Switching Diode Surface mount For general purpose switching applications , /01 MCC 1SS357 Micro Commercial Components www.mccsemi.com Revision: C TM 2 of 3 -
Original
Abstract: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS357 LO W VOLTAGE HIGH SPEED SWITCHING. Unit in mm Low Forward Voltage VF (3) = 0.54 (Typ.) Low Resistance Current I r = £/â'A (Max.) > Small Package SC-70 il Â¥ I 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM , IF (A) REVERSE CURRENT IR (A) REVERSE VOLTAGE 1SS357 -
OCR Scan
Abstract: T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS357 LOW VOLTAGE HIGH SPEED SWITCHING. · · · Low Forward Voltage Low Resistance Current Small Package VF (3) =0.54 (Typ.) I r = 5,uA (Max.) SC-70 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power , contained herein is subject to change without notice. 1997 08-18 1/2 - TO SH IB A 1SS357 If - -
OCR Scan
20X20
Abstract: TOSHIBA TOSHIBA DIODE LO W VOLTAGE HIGH SPEED SWITCHING. 1SS357 1 SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm Low Forward Voltage Low Resistance Current Small Package VF (3) = 0.54 (Typ.) Ir = £>/"A (Max.) SC-70 il 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward , /2 TOSHIBA 1SS357 FORWARD CURRENT IF (A) FORWARD VOLTAGE VF (V) REVERSE CURRENT IR -
OCR Scan
diode marking NZ
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