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1SS226-TP Micro Commercial Components Rectifier Diode, 2 Element, 0.1A, Silicon, LEAD FREE, PLASTIC PACKAGE-3

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Part : 1SS226(T5LSNMN,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 1SS226,LF Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0218 Price Each : $0.0267
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Part : 1SS226-TP Supplier : Micro Commercial Components Manufacturer : Newark element14 Stock : - Best Price : $0.0280 Price Each : $0.0380
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1SS226 Datasheet

Part Manufacturer Description PDF Type
1SS226 EIC Semiconductor High Speed Switching Diodes Original
1SS226 Galaxy Semi-Conductor Holdings Surface mount switching diode Original
1SS226 Kexin Ultra High Speed Switching Application Original
1SS226 Shenzhen Yongerjia Electronic Switching Diode Original
1SS226 Toshiba Diode - Silicon Epitaxial Planar Type Original
1SS226 Toshiba Japanese - Diodes Original
1SS226 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original
1SS226 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS226 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS226 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan
1SS226 Toshiba Toshiba Shortform Catalog Scan
1SS226T5LFT Toshiba 1SS226 - Rectifiers Diode Original
1SS226T5LT Toshiba 1SS226T5LT - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original
1SS226TE85L Toshiba 1SS226 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS226TE85L2 Toshiba 1SS226 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS226TE85LF Toshiba 1SS226TE85LF - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original
1SS226TE85R Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1G) Original
1SS226TE85R2 Toshiba 1SS226 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS226-TP Micro Commercial Components Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 80V 100MA SOT23 Original

1SS226

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1SS226 1SS226 : : : : : mm SC-59 VF = 0.9V () trr = 1.6ns () CT = 0.9pF () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 85 V TO­236MOD SC­59 1­3G1G VR 80 V IFM , ) (//) ( /) () () *: 70% 1 2007-11-01 1SS226 (Ta = 25°C) VF (1 , ( 1) V A 2 2007-11-01 1SS226 1. (trr) 3 2007-11-01 1SS226 · Toshiba
Original
Abstract: BL Galaxy Electrical Production specification Surface mount switching diode 1SS226 FEATURES Pb Lead-free Fast switching. Power dissipation. PD:150mW(Tamb=25) APPLICATIONS High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking 1SS226 Package , switching diode Production specification 1SS226 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise , Production specification Surface mount switching diode 1SS226 PACKAGE OUTLINE Plastic surface BL Galaxy Electrical
Original
1SS196 marking C3 sot-23 diode marking code C3 sot23 c3 sot-23 code c3 sot-23 SOT-23 marking C3 sot-23 marking code C3 BL/SSSDC007 3000/T
Abstract: Product No. 1SS226-T1 1. 2. Package Type Shipping Quantity SOT-23 3000/Tape & Reel , ' suffix to part number above. For example, 1SS226-T1-LF. WON-TOP ELECTRONICS and are registered , ® 1SS226 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  Dual , . Revision: April, 2012 www.wontop.com 1 ® 1SS226 WON-TOP ELECTRONICS Electrical , ® 1SS226 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) C3 C3 Won-Top Electronics
Original
MIL-STD-202
Abstract: 1SS226 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. A A1 b c D E E1 e e1 L 0.90 1.15 0.00 0.10 0.30 0.50 0.08 , Symbol VRM VR IFM IO IFSM PD TJ TSTG 1SS226 Units V V mA mA A mW 85 80 300 100 2 150 125 -55 , -2009, KSYR11 RATING AND CHARACTERISTIC CURVES 1SS226 Fig.1 Typical Forward Characteristics Fig.2 Typical , . Forward Current Fig.5 Reverse Recovery Time (trr) test circuit Device Marking : Device P/N 1SS226 Lite-On Semiconductor
Original
1SS226 MARKING C3 Diode Marking C3 marking C3 J-STD-020D 2002/95/EC
Abstract: 1SS226 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , IO IFSM PD TJ TSTG 1SS226 Units V V mA mA A mW 85 80 300 100 2 150 125 -55~+125 , CHARACTERISTIC CURVES 1SS226 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics Fig , .5 Reverse Recovery Time (trr) test circuit Device Marking : Device P/N 1SS226 Marking C3 Equivalent Lite-On Semiconductor
Original
Abstract: 1SS226 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 , otherwise specified Characteristic Symbol 1SS226 Units Non-Repetitive Peak Reverse Voltage , . 2, Oct-2010, KSYR11 RATING AND CHARACTERISTIC CURVES 1SS226 Fig.1 Typical Forward , Marking : Device P/N 1SS226 Marking C3 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS226 Important Notice and Disclaimer LSC reserves the right to make changes to this document and Lite-On Semiconductor
Original
Abstract: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 2000-09-11 1/2 1SS226 Toshiba
Original
961001EAA2
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1SS226 1SS226 + 0.5 2.5 -0.3 + 0.25 1.5-0.15 Unit in mm Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : V jt( 3 ) = 0.9V (Typ.) : tj* ^ 1.6ns (Typ.) ; CVf1-0,9pF (Typ,) -ES do o 2 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage , TOSHIBA Sem iconductor Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS226 ip - vf -
OCR Scan
Abstract: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ , 1 2001-06-07 1SS226 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS226 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the Toshiba
Original
Abstract: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward Toshiba
Original
Abstract: k2050 BL × 2 47 1SS226 × 2 1SS193 910 910 2SC2240 - BL 61 ,+) I = N , uF 1SS226 ×2 2SA970 × 2 4.7 uF 470 +VCC 270 pF 390 27 k (0.5 W) 2SA970 110 47 uF 110 680 2SA1145 0.02 (2 W) 0.02 (2 W) 1SS226 × 2 2 k 2.4 -
Original
2SK147 2SC1959 2SA1015 2SK389 2SC3423 2SK405 2SC3280 2SA1301 2SC3281 2SA1302 2sk405 2sj115 2SC3182N 2SA950 2SC2120 2SC3422
Abstract: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum , 1 2001-06-07 1SS226 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS226 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the Toshiba
Original
TOSHIBA "ULTRA HIGH SPEED" DIODE
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS226 · · Features Low Current Leakage. Surface Mount SOT-23 Package 150mW SWITCHING DIODE SOT-23 A D . · · · Maximum Ratings Operating Temperature: -55°C to +125°C Storage Temperature: -55°C to +150 °C 150mW Power dissipation. C B F E Maximum Ratings Reverse , =0.1IR .037 .950 .037 .950 Revision: 4 www.mccsemi.com 2004/11/26 1SS226 MCC Micro Commercial Micro Commercial Components
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 1SS226 SWITCHING DIODE FEATURES Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) MARKING: C3 Maximum Ratings ,Single Diode @TA=25 Parameter Symbol Limits Unit Non-Repetitive Peak reverse , recovery time Typical Characteristics 1SS226 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
Original
Abstract: 1SS226 SILICON EPITAXIAL PLANAR DIODE 3 Features · Small package · Low forward voltage · Fast reverse recovery time · Small total capacitance 1 2 Marking Code: FC SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 , 1SS226 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company Semtech Electronics
Original
Abstract: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Ultra High Speed Switching Application z Small package z Low forward voltage z Small total capacitance : SC-59 : VF (3) = 0.9V (typ.) : CT = 0.9pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Absolute Maximum , 1 2007-11-01 1SS226 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS226 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without Toshiba
Original
Abstract: 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose , 0.25 06-Sep-06 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Maximum Ratings (TJ , 1SS190 E3 3 2 1SS193 F3 3 1 1SS196 G3 3 2 1SS226 C3 3 1 2 Weitron
Original
1SS181 1SS184 1SS187 top marking c3 sot23 1SS226 c3 MARKING B3 SOT-23 F3 SOT-23 DIODE marking G3 1SS190/1SS193/1SS196/1SS226
Abstract: 1SS226 SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts Power 150 mW FEATURES â'¢ Ultra high speed â'¢ Low Forward Voltage â'¢ Small total capacitance â'¢ Lead free in comply with EU RoHS 2002/95/EC directives. â'¢ Green molding compound as per IEC61249 Std. . (Halogen Free , -REV.00 PAGE . 1 1SS226 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) PARAMETER SYMBOL , 1 1.2 VF, Forward Voltage (V) Fig.4 Typical Forward Characteristics PAGE . 2 1SS226 -
Original
MIL-STD-750 2012-REV
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS226 · · Features Low Current Leakage. Surface Mount SOT-23 Package 150mW SWITCHING DIODE SOT-23 A D . · · · Maximum Ratings Operating Temperature: -55°C to +150 °C Storage Temperature: -55°C to +150 °C 150mW Power dissipation. C B F E Maximum Ratings Reverse , =0.1IR .037 .950 .037 .950 Revision: 4 www.mccsemi.com 2004/11/26 1SS226 MCC Micro Commercial Micro Commercial Components
Original
Abstract: 1SS226 Switching Diodes SOT-23 Features Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) MARKING: C3 Maximum Ratings ,Single Diode @TA=25 Parameter Non-Repetitive Peak reverse voltage Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRM VRRM VRWM VR IFM , recovery time 1SS226 Switching Diodes Typical Characteristics - -
Original
Abstract: 1SS226 SURFACE MOUNT SWITCHING DIODE VOLTAGE FEATURES · Ultra high speed · Low Forward Voltage · Small total capacitance · Lead free in comply with EU RoHS 2002/95/EC directives. · Green molding compound as per IEC61249 Std. . (Halogen Free) 80 Volts Power 150 mW MECHANICAL DATA Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight : 0.0003 ounces, 0.0084 grams Polarity:Color band denotes cathode end Marking : A7 MAXIMUM RATINGS (T A=25 C unless otherwise PanJit International
Original
marking 05 PANJIT 1SS22
Abstract: TO SHIBA TO SHIBA DIODE 1SS226 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 1SS226 SILICON EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2 . 5 - 0.3 · · · · Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vp (3) = 0.9V (Typ.) : trr= 1.6ns (Typ.) : CT = 0.9pF (Typ.) + 0.25 1 .5 - 0 .1 5 2 -ES M A X IM U M RATINGS (Ta = 25°C) 00 , ility H a n d b o o k . 1997 - 05-07 1/2 TO SHIBA 1SS226 If - V f IR - V r REVERSE -
OCR Scan
toshiba pro
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