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Part Manufacturer Description PDF & SAMPLES
1N5818-T Diodes Incorporated Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N5818-TP Micro Commercial Components Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N5818-E3/73 Vishay Semiconductors Diode Schottky 30V 1A 2-Pin DO-204AL Ammo
1N5818-E3/54 Vishay Semiconductors Diode Schottky 30V 1A 2-Pin DO-204AL T/R
1N5818-E3/53 Vishay Semiconductors Diode Schottky 30V 1A 2-Pin DO-204AL Ammo
1N5818 BK Central Semiconductor Corp DIODE SCHOTTKY 30V 1A DO41

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1N5818 Datasheet

Part Manufacturer Description PDF Type
1N5818 Bytes 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original
1N5818 Comchip Technology 1.0 A schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Original
1N5818 Daesan Electronics CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts Original
1N5818 DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original
1N5818 Diodes 1.0A SCHOTTKY BARRIER RECTIFIER Original
1N5818 Diodes Short Form Selection Guide Original
1N5818 Diodes 1.0A SCHOTTKY BARRIER RECTIFIER Original
1N5818 Diotec Diode, 1A, 30V, Schottky Barrier Rectifier Original
1N5818 Diotec Si-Schottky-Rectifiers Original
1N5818 EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original
1N5818 Fagor 30 V, 1A schottky barrier rectifier Original
1N5818 Fairchild Semiconductor Schottky Rectifiers Original
1N5818 Fairchild Semiconductor 1.0 Ampere Schottky Barrier Rectifiers Original
1N5818 Fairchild Semiconductor Schottky Barrier Rectifier Original
1N5818 FCI Diode, 1A, 30V, Schottky Barrier Diode Original
1N5818 Formosa 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original
1N5818 Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original
1N5818 General Semiconductor SCHOTTKY BARRIER RECTIFIER Original
1N5818 Good-Ark SCHOTTKY BARRIER RECTIFIER Original
1N5818 HY Electronic SCHOTTKY BARRIER RECTIFIERS Original
Showing first 20 results.

1N5818

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: blE D uca054 Fig.5 1N5818. Maximum values steady state forward power dissipation as a function of , N AMER PHILIPS/DISCRETE b«=JE > m bhS3m DD2bTBM T37 â  APX 1N5817/1N5818/1N5819 Schottky , PARAMETER TYPE MAX. UNIT Vrrm repetitive peak reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V vrwm crest working reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V Vr continuous reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V vrsm non-repetitive peak reverse voltage 1N5817 24 V -
OCR Scan
N5819 1n5819 philips 1.1N5819 1N5817 Philips N5818 PHILIPS 1N 1N5817/1N5818/1N5819 100K/W
Abstract: 1N5817/1N5818/1N5819 N AMER PHILIPS/DISCRETE b'iE D If (av) W Fig.5 1N5818. Maximum values , 1N5818 1N5819 1N5817 1N5818 1N5819 n o n - r e p e titiv e p e a k re v e rs e v o lta g e 20 30 40 1N5817 1N5818 1N5819 c o n tin u o u s r e v e rs e v o lta g e MAX. 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 c r e s t w o r k in g re v e rs e v o lta g e Vr TYPE 1N5817 1N5818 1N5819 r e p e titiv e p e a k re v e rs e v o lta g e 25 -
OCR Scan
81N5817
Abstract: terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-1N5818 VS-1N5818TR VS-1N5818 , VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS-1N5818. axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-1N5818 30 VS-1N5818-M3 30 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5818, VS-1N5818 Vishay Semiconductors
Original
diode 1n5818 VS-1N5818 VS-1N5818-M3 DO-204AL DO-41 2002/95/EC 2011/65/EU
Abstract: terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-1N5818 VS-1N5818TR VS-1N5818 , VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS-1N5818. axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-1N5818 30 VS-1N5818-M3 30 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5818, VS-1N5818 Vishay Semiconductors
Original
Abstract: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF(AV , reliability waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for , www.irf.com 1 1N5818, 1N5819 Bulletin PD-20590 rev. A 05/02 Voltage Ratings Part number VR 1N5818 1N5819 30 40 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V International Rectifier
Original
1N581X datasheets diode 1n5818 1N5818/
Abstract: Fig.4 0.5 1.5 1 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation as a , DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 1N5817; 1N5818; 1N5819 , diodes 1N5817; 1N5818; 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to Philips Semiconductors
Original
1N817 diode 1N5819 1N5817 schottky diode symbol datasheets diode 1n5819 1N5819 package 1n5819 data sheet MAM218 MBC051
Abstract: Fig.4 1 0.5 1.5 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 0 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky , 1N5817; 1N5818; 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to 1N5819 types -
Original
1N5819 Diodes MBG435 MBG432 Philips applications
Abstract: Schottky barrier diodes 1N5817; 1N5818; 1N5819 MB£641 Fig.4 1N5818. Maximum values steady state forward , 0 10 20 vR(V) 30 Fig.8 1N5818. Maximum permissible junction temperature as a function of reverse , / / / / / / j / / / / > / / / / / / / / / / / / t / / y s b ' s 0 10 20 VR(V) 30 Fig.9 1N5818. , Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 , Manufacturer Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 -
OCR Scan
data sheet for 1N5817 DIODE 1N5819 dc
Abstract: Fig.4 1 0.5 1.5 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 0 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky , Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES Philips Semiconductors
Original
Abstract: 1000 PACKAGING DESCRIPTION Bulk VS-1N5818TR 5000 5000 Tape and reel VS-1N5818 , VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , DESCRIPTION The VS-1N5818. axial leaded Schottky rectifier has been optimized for very low forward voltage , VS-1N5818 VS-1N5818-M3 UNITS 30 30 V VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER , www.vishay.com/doc?91000 VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors ELECTRICAL Vishay Semiconductors
Original
Abstract: 1000 PACKAGING DESCRIPTION Bulk VS-1N5818TR 5000 5000 Tape and reel VS-1N5818 , VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , DESCRIPTION The VS-1N5818. axial leaded Schottky rectifier has been optimized for very low forward voltage , VOLTAGE RATINGS PARAMETER SYMBOL VR Maximum DC reverse voltage VS-1N5818 VS-1N5818 , www.vishay.com/doc?91000 VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors ELECTRICAL Vishay Intertechnology
Original
JS709A
Abstract: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features Very small conduction , 2011 Doc ID 6262 Rev 5 1/7 www.st.com 7 Characteristics 1N5817, 1N5818, 1N5819 1 , ms Sinusoidal tp = 1 us, Tj = 25 °C 1200 20 1N5818 30 10 1 25 1200 -65 to + 150 150 10000 900 1N5819 , 1N5817 0.5 10 0.45 0.75 1N5818 0.5 10 0.50 0.80 1N5819 0.5 10 0.55 0.85 Unit mA mA V V VF (1) 1 , 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 2 STMicroelectronics
Original
Abstract: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features I Very small conduction , 5 1/7 www.st.com 7 Characteristics 1 1N5817, 1N5818, 1N5819 Characteristics , (RMS) 1N5819 20 Repetitive peak reverse voltage 1N5818 30 40 Forward rms current , Tests conditions Tj = 25 °C Tj = 100 °C VR = VRRM 1N5817 1N5818 1N5819 Unit 0.5 , / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 2/7 Doc ID 6262 Rev 5 1N5817, 1N5818 STMicroelectronics
Original
Abstract: 1000 PACKAGING DESCRIPTION Bulk VS-1N5818TR 5000 5000 Tape and reel VS-1N5818 , VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , DESCRIPTION The VS-1N5818. axial leaded Schottky rectifier has been optimized for very low forward voltage , VOLTAGE RATINGS PARAMETER SYMBOL VR Maximum DC reverse voltage VS-1N5818 VS-1N5818 , www.vishay.com/doc?91000 VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors ELECTRICAL Vishay Semiconductors
Original
Abstract: 1N5818 1N5819 20 30 40 RMS forward current Unit V 10 A IF(AV) Average forward , Lead length = 10 mm 45 °C/W 1N5817 1N5818 1N5819 Unit STATIC ELECTRICAL CHARACTERISTICS , equations : P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 Fig. 1: Average forward power dissipation versus average forward current (1N5817/1N5818). , forward current versus ambient temperature (=0.5) (1N5817/1N5818). IF(av)(A) Fig. 2-2: Average STMicroelectronics
Original
DO41 1N581
Abstract: 1N5818 1N5818RL 1N5819 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead , - (80) (0.5) = 69°C. *Values given are for the 1N5818. Power is slightly lower for the 1N5817 , 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . , Polarity Band Marking: 1N5817, 1N5818, 1N5819 SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS , 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse ON Semiconductor
Original
1n5819 equivalent 1N5817RL 5000/T
Abstract: ) (0.5) = 69°C. "V alues given are for the 1N5818. Power is slightly lower for the 1N5817 because of its , , Majority Carrier Conduction Low Power Loss/High Efficiency M echanical C haracteristics 1N5817 1N5818 , to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N5817, 1N5818, 1N5819 , 1N5818 30 1N5819 40 Unit V 24 14 36 21 1.0 48 28 V V A ta 85 80 25 (for one , 0.1 A) (iF = 1 .0 A) (iF = 3.0 A) (TL = 25°C) 0 1 = 100°C) Symbol VF 1N5818 0.33 0.55 0.875 1.0 10 -
OCR Scan
1N5819a 1N5817/D
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead , 69°C. *Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower , 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . , Polarity Band Marking: 1N5817, 1N5818, 1N5819 SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS , /D 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak ON Semiconductor
Original
Abstract: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has , millimeters and inches www.irf.com 1 1N5818, 1N5819 Bulletin PD-20590 rev. B 11/04 Voltage Ratings Part number VR 1N5818 1N5819 30 40 Max. DC Reverse Voltage (V) VRWM Max , Current * See Fig. 6 35 Electrical Specifications Parameters VFM 1N5818 1N5819 Units Max International Rectifier
Original
Abstract: 5000/Tape & Reel 1N5818 Axial Lead 1000 Units/Bag 1N5818RL Axial Lead 5000/Tape & , Factor F Square Wave 4.0 30 23 *Values given are for the 1N5818. Power is slightly lower , 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . , : 1N5817, 1N5818, 1N5819 AXIAL LEAD CASE 59-10 DO-41 PLASTIC MAXIMUM RATINGS Please See the Table , 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Symbol 1N5817 1N5818 1N5819 Unit Peak Repetitive ON Semiconductor
Original
Abstract: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This , Order Number: 1N5817/D 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse , ) 85 1N5817 20 1N5818 30 1N5819 40 Unit V 24 14 36 21 1.0 80 25 (for one cycle) -65 to +125 150 , (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Symbol vF 1N5817 0.32 0.45 0.75 1.0 10 1N5818 0.33 0.55 , 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial ON Semiconductor
Original
Abstract: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This , and best overall value. Publication Order Number: 1N5817/D 1N5817, 1N5818, 1N5819 MAXIMUM , Nonâ'Repetitive Peak Reverse Voltage 1N5818 24 36 48 V VR(RMS) Peak Repetitive Reverse , otherwise noted) (Note 1) Characteristic Symbol 1N5817 1N5818 1N5819 Unit (iF = 0.1 A , %. http://onsemi.com 2 mA 1N5817, 1N5818, 1N5819 125 NOTE 3. â'" DETERMINING MAXIMUM RATINGS ON Semiconductor
Original
Abstract: that sets output voltage. CADDELL-BURNS 7200-12 82␮H 1N5818 ILIM +5V 40mA VIN SW1 , voltage (≠0.5 V for a 1N5818 Schottky). Energy is only stored in the inductor while the ADP1073 , 0.5V ) × (75 mA) = 413 mW VSW = voltage drop across the switch VD = diode drop (0.5 V for a 1N5818 , circuits, the 1N5818 is a suitable companion to the ADP1073. This diode has a VF of 0.5 V at 1 A, 4 ÂuA to , SW2 4 GND R1 5 D1 1N5818 C1 R2 Figure 16. Step-Down Mode Operation When the Analog Devices
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ADP1073-3 ADP1073-5 ADP1073-12 1N5820 GA10-822 MTP3055EL
Abstract: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This , are recommended choices for future use and best overall value. 1N5817, 1N5818, 1N5819 MAXIMUM , 36 48 V VR(RMS) Non-Repetitive Peak Reverse Voltage 1N5818 VRRM VRWM VR Peak , Symbol 1N5817 1N5818 1N5819 Unit (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) vF 0.32 , . Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2 mA 1N5817, 1N5818, 1N5819 125 NOTE ON Semiconductor
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1N5817G 1N5817RLG 1N5819G 1N5817-19 1n5817 equivalent 1N5819RLG BRD8011/D
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