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1N5818 Datasheet

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1N5818 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
73.23 Kb

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1N5818 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog
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1 pages,
59.57 Kb

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1N5818 N/A Shortform Data and Cross References (Misc Datasheets)
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1 pages,
34.89 Kb

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1N5818 BKC International 30 V, 1 A schottky power rectifier diode
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1 pages,
50.51 Kb

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1N5818 Bytes 1.0 AMP SCHOTTKY BARRIER RECTIFIERS
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2 pages,
150.44 Kb

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1N5818 Capar Schottky Barrier Rectifiers
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1 pages,
82.08 Kb

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1N5818 CEIEC Rectifier Diode, Schottky Diode, Single, 30V, DO-41, 2-Pin
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2 pages,
37.22 Kb

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1N5818 Codi Semiconductor 1A Schottky Barrier Rectifier
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2 pages,
100.58 Kb

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1N5818 Comchip Technology 1.0 A schottky barrier rectifier. Max repetitive peak reverse voltage 30 V.
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2 pages,
28.18 Kb

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1N5818 Daesan Electronics CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts
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2 pages,
288.85 Kb

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1N5818

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: blE D uca054 Fig.5 1N5818. Maximum values steady state forward power dissipation as a function of , N AMER PHILIPS/DISCRETE b«=JE > m bhS3m DD2bTBM T37 ■ APX 1N5817/1N5818/1N5819 Schottky , PARAMETER TYPE MAX. UNIT Vrrm repetitive peak reverse voltage 1N5817 1N5817 20 V 1N5818 30 V 1N5819 1N5819 40 V vrwm crest working reverse voltage 1N5817 1N5817 20 V 1N5818 30 V 1N5819 1N5819 40 V Vr continuous reverse voltage 1N5817 1N5817 20 V 1N5818 30 V 1N5819 1N5819 40 V vrsm non-repetitive peak reverse voltage 1N5817 1N5817 24 V ... OCR Scan
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9 pages,
197.22 Kb

PHILIPS 1N N5818 1N5817 Philips 1.1N5819 1N5818 1n5819 philips N5819 1N5819 1N5817 1N5817/1N5818/1N5819 TEXT
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Abstract: 1N5817/1N5818/1N5819 N AMER PHILIPS/DISCRETE b'iE D If (av) W Fig.5 1N5818. Maximum values , 1N5818 1N5819 1N5819 1N5817 1N5817 1N5818 1N5819 1N5819 n o n - r e p e titiv e p e a k re v e rs e v o lta g e 20 30 40 1N5817 1N5817 1N5818 1N5819 1N5819 c o n tin u o u s r e v e rs e v o lta g e MAX. 1N5817 1N5817 1N5818 1N5819 1N5819 1N5817 1N5817 1N5818 1N5819 1N5819 1N5817 1N5817 1N5818 1N5819 1N5819 c r e s t w o r k in g re v e rs e v o lta g e Vr TYPE 1N5817 1N5817 1N5818 1N5819 1N5819 r e p e titiv e p e a k re v e rs e v o lta g e 25 ... OCR Scan
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9 pages,
249.16 Kb

TEXT
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Abstract: terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-1N5818 VS-1N5818TR VS-1N5818 , VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS-1N5818. axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-1N5818 30 VS-1N5818-M3 30 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5818, VS-1N5818 ... Vishay Semiconductors
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6 pages,
112.14 Kb

diode 1n5818 VS-1N5818 VS-1N5818-M3 TEXT
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Abstract: terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-1N5818 VS-1N5818TR VS-1N5818 , VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS-1N5818. axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-1N5818 30 VS-1N5818-M3 30 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5818, VS-1N5818 ... Vishay Semiconductors
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6 pages,
110.57 Kb

VS-1N5818 VS-1N5818-M3 TEXT
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Abstract: Bulletin PD-20590 PD-20590 rev. A 05/02 1N5818 1N5819 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 1N5819 Units IF(AV , reliability waveform VRRM The 1N5818/ 1N5819 1N5819 axial leaded Schottky rectifier has been optimized for , www.irf.com 1 1N5818, 1N5819 1N5819 Bulletin PD-20590 PD-20590 rev. A 05/02 Voltage Ratings Part number VR 1N5818 1N5819 1N5819 30 40 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V ... International Rectifier
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5 pages,
74.86 Kb

DO-204AL datasheets diode 1n5818 1N581X 1N5819 1N5818 PD-20590 TEXT
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Abstract: Fig.4 0.5 1.5 1 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation as a , DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 M3D119 1N5817 1N5817; 1N5818; 1N5819 1N5819 , diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 1N5817 to ... Philips Semiconductors
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9 pages,
69.36 Kb

datasheets diode 1n5818 1N5817 Philips 1N5819* diode 1n5819 data sheet 1N5819 package datasheets diode 1n5819 1N5817 schottky diode symbol 1N5818 diode 1N5819 1N5817 1N5819 1N817 TEXT
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Abstract: Fig.4 1 0.5 1.5 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 0 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 M3D119 1N5817 1N5817; 1N5818; 1N5819 1N5819 Schottky , 1N5817 1N5817; 1N5818; 1N5819 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 1N5817 to 1N5819 1N5819 types ... Original
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9 pages,
58.96 Kb

Philips applications 1N5817 Philips 1n5819 philips MBG432 MBG435 1N5819 Diodes 1N5818 datasheets diode 1n5818 1N5817 1N817 1N5819 TEXT
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Abstract: Schottky barrier diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 MB£641 Fig.4 1N5818. Maximum values steady state forward , 0 10 20 vR(V) 30 Fig.8 1N5818. Maximum permissible junction temperature as a function of reverse , / / / / / / j / / / / > / / / / / / / / / / / / t / / y s b ' s 0 10 20 VR(V) 30 Fig.9 1N5818. , Philips Semiconductors Product specification Schottky barrier diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 , Manufacturer Philips Semiconductors Product specification Schottky barrier diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 ... OCR Scan
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8 pages,
207.26 Kb

DIODE 1N5819 dc data sheet for 1N5817 1N5819 package 1N5818 1N5817 Philips 1n5819 data sheet 1N5819 1N5817 TEXT
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Abstract: Fig.4 1 0.5 1.5 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 0 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 M3D119 1N5817 1N5817; 1N5818; 1N5819 1N5819 Schottky , Semiconductors Product specification Schottky barrier diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 FEATURES ... Philips Semiconductors
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datasheet

9 pages,
40.5 Kb

1N817 1N5817 Philips datasheets diode 1n5818 1N5818 1N5817 1N5819 TEXT
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Abstract: 1000 PACKAGING DESCRIPTION Bulk VS-1N5818TR 5000 5000 Tape and reel VS-1N5818 , VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , DESCRIPTION The VS-1N5818. axial leaded Schottky rectifier has been optimized for very low forward voltage , VS-1N5818 VS-1N5818-M3 UNITS 30 30 V VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER , www.vishay.com/doc?91000 VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors ELECTRICAL ... Vishay Semiconductors
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6 pages,
113.82 Kb

VS-1N5818 VS-1N5818-M3 TEXT
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Abstract: 1N5817 1N5817, 1N5818, 1N5819 1N5819 1N5817 1N5817 and 1N5819 1N5819 are Preferred Devices Axial Lead Rectifiers This , Order Number: 1N5817/D 1N5817/D 1N5817 1N5817, 1N5818, 1N5819 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse , ) 85 1N5817 1N5817 20 1N5818 30 1N5819 1N5819 40 Unit V 24 14 36 21 1.0 80 25 (for one cycle) -65 to +125 150 , (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Symbol vF 1N5817 1N5817 0.32 0.45 0.75 1.0 10 1N5818 0.33 0.55 , 1N5817 1N5817 1N5817RL 1N5817RL 1N5818 1N5818RL 1N5818RL 1N5819 1N5819 1N5819RL 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial ... ON Semiconductor
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8 pages,
72.19 Kb

1N5817 1N5818 1N5819 TEXT
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Abstract: 1N5817 1N5817, 1N5818, 1N5819 1N5819 1N5817 1N5817 and 1N5819 1N5819 are Preferred Devices Axial Lead Rectifiers . . . , Polarity Band Marking: 1N5817 1N5817, 1N5818, 1N5819 1N5819 SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS , 1N5818 1N5818RL 1N5818RL 1N5819 1N5819 1N5819RL 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead , 1N5817 1N5817, 1N5818, 1N5819 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse , Current applied) Symbol VRRM VRWM VR VRSM VR(RMS) IO 1N5817 1N5817 20 1N5818 30 1N5819 1N5819 40 Unit V 24 14 36 ... ON Semiconductor
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6 pages,
91.41 Kb

1n5819 equivalent 1N5817 1N5818 1N5819 TEXT
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Abstract: 1N5817 1N5817, 1N5818, 1N5819 1N5819 1N5817 1N5817 and 1N5819 1N5819 are Preferred Devices Axial Lead Rectifiers This , and best overall value. Publication Order Number: 1N5817/D 1N5817/D 1N5817 1N5817, 1N5818, 1N5819 1N5819 MAXIMUM , Non−Repetitive Peak Reverse Voltage 1N5818 24 36 48 V VR(RMS) Peak Repetitive Reverse , otherwise noted) (Note 1) Characteristic Symbol 1N5817 1N5817 1N5818 1N5819 1N5819 Unit (iF = 0.1 A , %. http://onsemi.com 2 mA 1N5817 1N5817, 1N5818, 1N5819 1N5819 125 NOTE 3. — DETERMINING MAXIMUM RATINGS ... ON Semiconductor
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datasheet

7 pages,
67.58 Kb

1N5817 1N5818 1N5819 TEXT
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Abstract: , Majority Carrier Conduction Low Power Loss/High Efficiency M echanical C haracteristics 1N5817 1N5817 1N5818 , to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N5817 1N5817, 1N5818, 1N5819 1N5819 , 1N5818 30 1N5819 1N5819 40 Unit V 24 14 36 21 1.0 48 28 V V A ta 85 80 25 (for one , 0.1 A) (iF = 1 .0 A) (iF = 3.0 A) (TL = 25°C) 0 1 = 100°C) Symbol VF 1N5818 0.33 0.55 0.875 1.0 10 , ) Motorola, Inc. 1996 1N5817 1N5817 1N5818 1N5819 1N5819 NOTE 1 - DETERMINING MAXIMUM RATINGS Reverse power ... OCR Scan
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8 pages,
276.83 Kb

1N5819a 1N5817/D TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
1N5818 1N5819 1N5819 LOW DROP POWER SCHOTTKY RECTIFIER Document Number: 6262 Date Update: 30 BENEFITS Symbol Parameter Value Unit 1N5817 1N5817 1N5818 1N5819 1N5819 V RRM Repetitive peak reverse voltage 20 30 40 V for a diode on its own heatsink 1/5 Symbol Parameter Tests Conditions 1N5817 1N5817 1N5818 1N5819 1N5819 Unit I R equations : P = 0.3 x I F(AV) + 0.090 I F 2 (RMS ) for 1N5817 1N5817 / 1N5818 P = 0.3 x I F(AV) + 0.150 I F 2 (RMS versus average forward current (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6262-v1.htm
STMicroelectronics 02/04/1999 6.89 Kb HTM 6262-v1.htm
1N5818 1N5819 1N5819 LOW DROP POWER SCHOTTKY RECTIFIER Document Number: 6262 Date Update: 30 BENEFITS Symbol Parameter Value Unit 1N5817 1N5817 1N5818 1N5819 1N5819 V RRM Repetitive peak reverse voltage 20 30 40 V for a diode on its own heatsink 1/5 Symbol Parameter Tests Conditions 1N5817 1N5817 1N5818 1N5819 1N5819 Unit I R equations : P = 0.3 x I F(AV) + 0.090 I F 2 (RMS ) for 1N5817 1N5817 / 1N5818 P = 0.3 x I F(AV) + 0.150 I F 2 (RMS versus average forward current (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6262-v2.htm
STMicroelectronics 14/06/1999 6.85 Kb HTM 6262-v2.htm
Datasheet LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 1N5817 1N5818 1N5819 1N5819 Value Unit 1N5817 1N5817 1N5818 1N5819 1N5819 V RRM Repetitive peak reverse voltage 20 30 40 V I F(RMS) RMS Conditions 1N5817 1N5817 1N5818 1N5819 1N5819 Unit I R * Reverse leakage current Tj = 25 5 C V R = V RRM 1 1 1 (RMS ) for 1N5817 1N5817 / 1N5818 P = 0.3 x I F(AV) + 0.150 I F 2 (RMS ) for 1N5819 1N5819 STATIC dissipation versus average forward current (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6262-v3.htm
STMicroelectronics 25/05/2000 8.61 Kb HTM 6262-v3.htm
Datasheet LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 1N5817 1N5818 1N5819 1N5819 SWITCHING LOW FORWARD VOLTAGE DROP FEATURES AND BENEFITS Symbol Parameter Value Unit 1N5817 1N5817 1N5818 1N5819 1N5819 V Tests Conditions 1N5817 1N5817 1N5818 1N5819 1N5819 Unit I R * Reverse leakage current Tj = 25 5 C V R = V RRM 1 1 1 m losses use the following equations : P = 0.3 x I F(AV) + 0.090 I F 2 (RMS ) for 1N5817 1N5817 / 1N5818 P = 0.3 : Average forward power dissipation versus average forward current (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6262.htm
STMicroelectronics 20/10/2000 9.1 Kb HTM 6262.htm
1N5817 1N5817_1 Product information page 1N5817 1N5817; 1N5818 diodes 1 1000 25 SOD81 450@IF=1A 20 20 1N5818 50@VR=4V typ Medium power Schottky Publication releasedate Datsheet status Page count File size 1N5817 1N5817; 1N5818; 1N5819 1N5819 Schottky 1N5818 1N5818 T/R 9340 012 00113 Standard Marking * Reel Pack, Axial, Standard SOD81 RFS 1N5818   9340 012 00133 Standard Marking * Ammopack, Axial, 52mm SOD81 RFS 1N5819 1N5819
/datasheets/files/philips/pip/1n5817_1.html
Philips 23/04/2003 5.05 Kb HTML 1n5817_1.html
1N5817 1N5817; 1N5818; 1N5819 1N5819     Schottky barrier diodes 450 80.0@typ. 25 25 80.0@typ. 1N5818 50.0@typ. 1000 30 550 30 1000 1000 1N5818 1N5818 9340 012 00133 Standard Marking * Ammopack, Axial, 52mm SOD81 RFS 1N5818 1N5818 T/R 9340 012 00113 Standard Marking * Reel Pack, Axial, Standard SOD81 RFS 1N5819 1N5819 ) 1N5817 1N5817; 1N5818; 1N5819 1N5819 Schottky barrier diodes 03-May-96 Product Specification 9 43.1
/datasheets/files/philips/pip/1n5817_1-v1.html
Philips 14/02/2002 17.58 Kb HTML 1n5817_1-v1.html
* ; 30.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5818 D ( IS=263u RS=73.1m BV=30.0 IBV=1.00m + CJO=203p M=0.333 N=1.90 TT=4.32u )
/datasheets/files/diodes-inc/spice-model/4228.mod
Diodes, Inc. 04/09/2012 0.19 Kb MOD 4228.mod
* * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * * * Model generated on Aug 21, 00 * MODEL FORMAT: SPICE3 .MODEL 1n5818 d +IS=4.4214e-05 RS=0.0531374
/datasheets/files/on-semiconductor/models/1n5818.sp3
On Semiconductor 20/06/2002 0.64 Kb SP3 1n5818.sp3
SCH DO-214AC DO-214AC SM 1 30 0.55 1000 25 1N5818 MCC SCH 1 30 0.55 1000 50 1N5818 CO SCH DO-41 DO-41 STD 1 30 0.55 1000 50 1N5818G CO SCH DO-41G DO-41G STD 1 30 0.55
/datasheets/files/microsemi/products/sch/19_0.55.htm
Microsemi 04/01/1999 20.89 Kb HTM 19_0.55.htm
1 20 25 0.45 1000 1N5818   DO-41 DO-41 STD 1 30 50 0.37 1000 1N5818   DO-41 DO-41 STD 1 30 25 0.55
/datasheets/files/microsemi/products/sch/do-41-v1.htm
Microsemi 07/12/1999 30.71 Kb HTM do-41-v1.htm

Shortform Datasheet Search

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1N5818T/R Philips Semiconductors / NXP Semiconductors General Purpose Schottky Rectifier

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Central Cross Reference Results

Central Part Industry Part Type Description
1N5818 Buy SB130 Buy Exact mechanical, slight electrical difference. Leaded Rectifier Schottky
1N5818 Buy SR103 Buy Exact mechanical, slight electrical difference. Leaded Rectifier Schottky

Diodes, Inc. Cross Reference Results

Diodes, Inc. Part Type Industry Part
1N5818 Buy Diodes, Inc. Closest 1N18 Buy
1N5818 Buy Diodes, Inc. Equivalent 1N5818G Buy
B130 Buy Diodes, Inc. Closest 1N5818M Buy
DFLS130 Buy Diodes, Inc. Closest 1N5818M Buy

Infineon (Siemens) Cross Reference Results

Infineon (Siemens) Part Status Industry Part Manufacturer Description
BAS3010B-03W Buy 1N5818 Buy Diodes Inc. Medium Power IF max 500mA
BAT54 Buy 1N5818 Buy Fairchild Semiconductor High Speed Switching, Clipping and Clamping

LRC Cross Reference Results

Leshan Radio Company Part Industry Part
1N5818 Buy 1N581 Buy

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NTE Electronics Part Industry Part
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NXP / Philips Cross Reference Results

NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
1N5817 Buy 1N5818 Buy Replacement For Discontinued NXP Product
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On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
1N5818 Buy 11DQ03 Buy International Rectifier Direct
1N5818 Buy 11EQS03 Buy Nihon Inter Electronics Direct
1N5818 Buy 1FWJ43N Buy Toshiba Direct
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1N5818 Buy VSK130 Buy Various Direct
1N5818G Buy 1N5817CE Buy Promax-Johnton Semiconductor Close
1N5818G Buy 1N5817RL Buy Motorola Close

Panjit Cross Reference Results

Pan Jit Part Industry Part
1N5818 Buy 1N5818RL Buy

Rectron Cross Reference Results

Rectron Part Industry Part Manufacturer
1N5818 Buy MBR130P Buy Motorola
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Solid State Devices Part Industry Part
SPD0901 Buy 1N5818 Buy
SPD0901SMS Buy 1N5818US Buy
SPD0902 Buy 1N5818 Buy
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STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
BYV10-40 Buy 1N5818 Buy - Nearest Preferred SIGNAL SCHOTTKY DIODES

Misc. Cross Reference Results

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